Optical and Conductivity Studies of Cr3+ Doped Polyvinyl Pyrrolidone Polymer Electrolytes

Abstract

Polymer electrolyte films of polyvinyl pyrrolidone (PVP) embedded with various concentrations of Cr³⁺ ions were prepared by a solution casting technique. The complexation between the Cr³⁺ ions and the polymer was confirmed by Fourier transform infrared (FTIR) spectroscopy and UV–vis spectroscopy. The electrical conductivity of the films was measured using an impedence analyzer in the frequency range of 42?Hz to 5?MHz at ambient temperature. It was observed that the conductivity increased with the increase in the Cr³⁺ ion concentration. UV–visible absorption spectra in the wavelength range of 200–800?nm were used to determine the direct and indirect optical energy band gaps and optical absorption edge. Both of the optical band gaps decreased with the increase in Cr³⁺ ion concentration. FTIR studies on pure and Cr³⁺ doped PVP polymer films revealed the vibrational changes that occurred due to the effect of the dopant Cr³⁺ ions in the polymer. Our results suggested that Cr³⁺, as a dopant, is a good choice to improve the electrical properties of PVP polymer electrolytes.     

Investigations on the effect of complexation of NaF salt with polymer blend (PEO/PVP) electrolytes on ionic conductivity and optical energy band gaps

Sodium ion conducting polymer blend electrolyte films, based on polyethylene oxide (PEO) and polyvinyl pyrrolidone (PVP) complexed with NaF salt, were prepared using solution casting technique. The complexation of the salt with the polymer blend was confirmed by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and UV-vis spectroscopy. Electrical conductivity of the films was measured with impedance analyzer in the frequency range of 1 Hz to 1 MHz and in the temperature range of 303-348 K. It was observed that the magnitude of conductivity increased with the increase in the salt concentration as well as the temperature. UV-vis absorption spectra in wavelength region of 200-800 nm were used to evaluate the optical properties like direct and indirect optical energy band gaps, optical absorption edge. The optical band gaps decreased with the increase in Na⁺ ion concentration. This suggests that NaF, as a dopant, is a good choice to improve the electrical properties of PEO/PVP polymer blend electrolytes.     

A Novel Chitosan/Polyvinyl Pyrrolidone (CS/PVP) Three-Dimensional Composite and Its Mechanism of Strength Improvement

Novel biodegradable three-dimensional (3D) composites with good mechanical properties have been prepared by coagulation of a chitosan/polyvinyl pyrrolidone (CS/PVP) solution in NaOH. For example, the strength and modulus of CS/PVP (1/1) were 82.5 MPa and 1.86 GPa, increasing 237% and 644% compared with CS, respectively. Scanning electron microscopy and Fourier transform infrared analysis suggest that the PVP component did not dissolve during the preparation process. The nonsolution of the composites is attributed to the extremely strong hydrogen bonding formed between the CS and PVP macromolecules. It was also found that there are synergistic effects between the formation of hydrogen bonding with PVP and cross-linking with glutaraldehyde (GA) for the improvement in the mechanical properties of CS. The mechanism of strength improvement has been discussed thoroughly from the aspects of free volume.     

Electrical and optical properties of pure and KClO3-doped P(MMA-CO-4VPNO) polymer electrolyte films

Ion-conducting polymer electrolyte films based on a copolymer poly(methyl-methacrylate-co-4-vinyl pyridine N-oxide) [P(MMA-CO-4VPNO)] complexed with potassium chlorate (KClO₃) were prepared by solution cast technique. The complexation of KClO₃ salt with the polymer was confirmed by X-ray diffraction and infrared studies. The electrical conductivity and optical absorption of pure and KClO₃-doped P(MMA-CO-4VPNO) polymer electrolyte films have been studied. The electrical conductivity increased with increasing dopant concentration, which is attributed to the formation of charge transfer complexes. The variation of electrical conductivity with temperature shows two regions with two activation energies. Optical properties like direct band gap, indirect band gap, and optical absorption edge were investigated for pure and doped polymer films in the wavelength range 300–550 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. The behavior is in an agreement with the activation energies obtained from the conductivity data.     

Effect of the Protonation and Chemical Doping of Poly(o-toludine) with Copper Sulfate on the Spectral and Electrical Properties of the Host Polymer

Poly(o-toluidine) (POT) and its samples doped with copper sulfate, a transition metal salt, were synthesized by a chemical oxidative polymerization technique using potassium dichromate as oxidant in aqueous hydrochloric acid medium and chemical doping with copper sulfate. The prepared polymeric samples were characterized by ultraviolet (UV)-visible spectroscopy, Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction, and DC conductivity measurement techniques. The UV-visible spectra of doped polymer displayed peaks indicating the presence of charged particles/polarons and/or formation of conducting POT. The characteristic FTIR peaks of the doped polymer provided information regarding structural changes in the backbone of POT and were consistent with the interaction of the benzenoid groups of the polymer with metal ions. X-ray diffraction patterns of powdered doped polymer showed an amorphous nature, as exhibited by most conducting polymers. The DC conductivity of doped polymer was measured by a two-probe method in the temperature range of 300–400 K; a significant enhancement in DC conductivity was observed with an increase in temperature, showing the semiconductor nature of the synthesized doped polymer.     

Review on Tin (II) Sulfide (SnS) Material: Synthesis,Properties, and Applications

Tin (II) sulphide (SnS), a direct band gap semiconductor compound, has recently received great attention due to its unique properties. Because of low cost, absence of toxicity, and good abundance in nature, it is becoming a candidate for future multifunctional devices particularly for light conversion applications. Although the current efficiencies are low, the cost-per-Watt is becoming competitive. At room temperature, SnS exhibits stable low-symmetric, double-layered orthorhombic crystal structure, having a = 0.4329, b = 1.1192, and c = 0.3984 nm as lattice parameters. These layer-structured materials are of interest in various device applications due to the arrangement of structural lattice with cations and anions. The layers of cations are separated only by van der Waals forces that provide intrinsically chemically inert surface without dangling bonds and surface density of states. As a result, there is no Fermi level pinning at the surface of the semiconductor. This fact leads to considerably high chemical and environmental stability. Further, the electrical and optical properties of SnS can be easily tailored by modifying the growth conditions or doping with suitable dopants without disturbing its crystal structure.

In the last few decades, SnS has been synthesized and studied in the form of single-crystals and thin-films. Most of the SnS single-crystals have been synthesized by Bridgeman technique, whereas thin films have been developed using different physical as well as chemical deposition techniques. The synthesis or development of SnS structures in different forms including single-crystals and thin films, and their unique properties are reviewed here. The observed physical and chemical properties of SnS emphasize that this material could has novel applications in optoelectronics including solar cell devices, sensors, batteries, and also in biomedical sciences. These aspects are also discussed.     

Track revelation and optical properties of pentaerythritol tetrakis (allyl carbonate) plastic for application as nuclear track detector: effects of gamma radiations

The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a ²⁵²Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.     

2, 6-双(2-苯并咪唑)吡啶-乙酸锌的合成和光谱性能

合成了一种新型的蓝光发射材料2,6-双(2-苯并咪唑)吡啶-乙酸锌,并利用元素分析、红外光谱、UV-Vis吸收谱、荧光激发光谱和荧光发射光谱研究了其结构、光学特性、能级结构和发光机理。结果表明,2,6-双(2-苯并咪唑)吡啶-乙酸锌是一种三齿配体的发光材料。在N,N-二甲基甲酰胺(DMF)溶液体系中测定了材料的紫外吸收光谱,2,6-双(2-苯并咪唑)吡啶的吸收峰波长主要为330,344nm;2,6-双(2-苯并咪唑)吡啶-乙酸锌的吸收峰波长主要为346,366nm。禁带宽度为3.01eV,在紫外光激发下,在DMF溶液体系中的荧光发射峰在458nm处,固态荧光发射峰在475nm,均为蓝色荧光,色纯度高,荧光量子效率高,其荧光发射主要来源于长波吸收带,最大波长吸收带对荧光发射贡献最大。有望通过合理的设计运用到有机电致发光器件中去。     

Effect of WO3 on EPR, structure and electrical conductivity of vanadyl doped WO3·M2O·B2O3 (M=Li, Na) glasses

Glasses with composition xWO₃·(30−x)M₂O·70B₂O₃ (M=Li, Na; 0≤x≤15) doped with 2 mol% V₂O₅ have been prepared using the melt-quench technique. The electron paramagnetic resonance spectra have been recorded in X-band (ν≈9.14 GHz) at room temperature (RT). The spin Hamiltonian parameters, dipolar hyperfine coupling parameter and Fermi contact interaction parameter have been calculated. It is observed that the resultant resonance spectra contain hyperfine structures (hfs) only due to V⁴⁺ ions, which exist as VO²⁺ ions in octahedral coordination with a tetragonal compression in the present glass system. The tetragonality increases with WO₃:M₂O ratio and also there is an expansion of 3d_xy orbit of unpaired electron in the vanadium ion. The study of IR transmission spectra over a range 400-4000 cm⁻¹ depicts the presence of WO₆ group. The DC conductivity (σ) has been measured in the temperature range 423-623 K and is found to be predominantly ionic.     

Effect of plasticizer on electrical conductivity and cell parameters of (PVC+KBrO<Subscript>3</Subscript>) polymer electrolyte system

The effect of a plasticizer dimethyl formamide (DMF) on the properties of a potassium ion conducting electrolyte based on polyvinyl chloride (PVC) complexed with potassium bromate (KBrO₃) prepared using solution-cast technique was investigated. Various experimental techniques, such as electrical conductivity (composition and temperature dependence) and transport number measurements, were used to characterize these polymer electrolyte films. It was found that the addition of plasticizer (DMF) significantly improved the ionic conductivity. Transport number for K⁺ ion ranged from 0.95 to 0.97 depending on the composition and temperature. Electrochemical cells of configuration K/PVC+KBrO₃/(I₂+C+electrolyte) and K/PVC+KBrO₃+plasticizer/(I₂+C+electrolyte) were fabricated. The discharge characteristics of the cells were studied under a constant load of 100 kΩ. The open-circuit voltage, short-circuit current, and discharge time for the plateau region were measured. The PVC+KBrO₃ polymer electrolyte system with added plasticizer showed an increased discharge time with respect to pure PVC+KBrO₃ electrolyte system. The features of complexation of the electrolytes were studied by X-ray diffraction.     

掺铕钼酸钆荧光粉的制备与发光性能分析

通过共沉淀法制备了红色荧光粉Gd_2-xEu_x(MoO₄)₃,并采用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱对所制备的样品进行结构表征分析,讨论了不同掺杂量下合成的荧光材料的发光性质。研究结果表明:所制备的Gd_2-xEu_x(MoO₄)₃红色荧光粉的三处激发峰分别位于394,465,534 nm。发射光谱中在589 nm和613 nm处有很强的发射峰,其中最强发射峰位于613 nm左右,与Eu³⁺的⁵D₀→⁷F₂跃迁对应。随着Eu³⁺掺杂量的增加,所合成的荧光粉的发光强度逐渐增强。在三组实验结果中,Gd_1.4Eu_0.6(MoO₄)₃(x=0.6)的发光强度最强。     

Optical Properties of the (CuInSe2) x ·(2ZnSe)1−x and (CuInTe2) x (·2ZnTe)1−x Solid Solutions

Crystals of the compounds CuInSe₂, CuInTe₂, ZnSe, and ZnTe, and the solid solutions (CuInSe₂) _x ·(2ZnSe)_1–x and (CuInTe₂) _x ·(2ZnTe)_1–x were grown by the Bridgman and chemical transport reactions methods. Their transmission and reflection spectra in the region of the main absorption line edge were studied. The forbidden band gap of the indicated materials was determined and its concentration dependences were built for the solid solutions. It is established that the forbidden band gap changes linearly with the x composition and is satisfactorily described by the square-law dependence.     

Eu~(3+)掺杂的Na_2YMg_2(VO_4)_3荧光粉制备和发光特性

采用溶胶-凝胶法制备了Na2Y1-xMg2(VO4)3∶x Eu~(3+)(x=0.15~0.75)系列自激活荧光粉。用XRD、SEM、光致发光光谱和荧光衰减曲线分别对其结构、形貌和发光性能进行表征。XRD结果显示样品为纯石榴石结构,其中Eu~(3+)取代Y~(3+);SEM照片显示样品为粒径大小在0.3~1μm范围内不规则的光滑球状颗粒;光谱分析表明,Na2YMg2(VO4)3作为自激活发光基质可以被200~400 nm紫外光有效激发,发出源于VO_4~(3-)电荷迁移跃迁的波长范围为400~700 nm的宽谱带绿光。掺杂Eu~(3+)后,在340 nm紫外光激发下同时出现了VO_4~(3-)的电荷迁移带和Eu~(3+)的特征光谱。不同浓度Eu~(3+)掺杂的光谱和荧光衰减曲线表明,存在VO_4~(3-)和Eu~(3+)之间的能量传递。     

一种新型的橙红光发射材料聚8-羟基喹啉镓的合成与光谱特性

合成了高分子金属配合物聚8-羟基喹啉镓(Gaqq3)n.利用红外吸收光谱、X射线衍射谱(XRD)研究了配合物的分子结构、物相结构;利用热重(TG)分析研究了配合物的热稳定性;利用紫外吸收光谱、荧光激发和发射光谱研究了该配合物的光物理性能.结果表明:(Gaqq3)n的热分解温度为443.6℃,具有较高的热稳定性.(Gaqq3)n的紫外吸收带位于250～500 nm,存在较强的带尾吸收,表明禁带中存在带隙缺陷态.(Gaqq3).的荧光激发带位于380～456nm,荧光发射峰位于568nm,为橙红光发射.光学带隙2.49 eV.与Gaq3相比,荧光强度有所减弱,这是由于次甲基相连的两个喹啉环的扭曲导致了(Gaqq3)n的刚性和共平面性不好;由于分子共轭体系的增大,使(Gaqq3)n分子的π电子更加离域化,导致了荧光发射峰发生了红移.(Gaqq3)n有望在有机电致发光器件和有机光伏器件中得到应用.     

Structural and electrical properties of high-energy ball-milled NASICON type Li1.3Ti1.7Al0.3(PO4)2.9(VO4)0.1 ceramics

Nano-crystallites of Li_1.3Ti_1.7Al_0.3(PO₄)_2.9(VO₄)_0.1 NASICON type material are prepared by means of solid-state reaction of a stoichiometric mixture after milling it for 22 and 55 h. The milling reduces the average crystallite size of the ceramic to 80 and 60 nm, respectively. Mechanical milling changes structural parameters and the strain induced at the grain-boundaries plays a major role in improving electrical conductivity. An order of magnitude increase in electrical conductivity is observed in the material milled for 55 h compared to the unmilled material, which is also reflected in permittivity loss. Modulus and permittivity representations substantiate the constriction effect of grain-boundaries observed in the complex impedance representation.     

1.0 MeV电子辐照致VO_2(B)薄膜结构与光谱改变研究

本文以能量为1.0 MeV的电子束辐照VO2(B)薄膜,对电子辐照在薄膜中产生的缺陷进行了理论计算,同时使用X射线衍射仪、原子力显微镜、分光光度计对薄膜进行测试,分析了电子辐照对薄膜结构、形貌与紫外-可见光谱(280~880nm)的影响。结果显示:电子辐照可以在薄膜中引入点缺陷并产生退火效应,电子辐照使薄膜的表面晶粒细化,辐照后薄膜光谱的吸收峰位发生移动,其移动的最大位移达到21nm,辐照后薄膜的光学禁带宽度也有所增加。     

Formation of Co ultrathin films on Si(1 1 1): Growth mechanisms, electronic structure and transport

The AES, EELS, AFM and resistance measurement investigations have been performed to determine the growth mechanism, electronic structure and resistance-thickness dependence of Co layers on silicon at the thickness range from submonolayer up to several monolayer coverage. These layers were obtained under UHV high-rate deposition with using re-evaporation of Co from a Ta foil. The layer-by-layer growth of Co on Si(1 1 1) with some light segregation of Si has been found on the AES data. An enlarged and reduced concentration of valence electrons in the interface Si layer at the thickness ranges 0-1 Å and in the Co film at d = 1-2 Å has been observed. Resistance measurement of the Co film showed a fast decrease of the resistance down to some value limited by quantum-size effect in accordance with the formation of a two-dimensional Co phase at d = 1-2 Å.