Anisotropic Spin Splitting in Step Quantum Wells

By the method of finite difference, the anisotropic spin splitting of the AlxGa1-xAs/GaAs/Aly Ga1-yAs/AlxGal-xAs step quantum wells （QWs） are theoretically investigated considering the interplay of the bulk inversion asymmetry and structure inversion asymmetry induced by step quantum well structure and external electric field. We demonstrate that the anisotropy of the total spin splitting can be controlled by the shape of the QWs and the external electric field. The interface related Rashba effect plays an important effect on the anisotropic spin splitting by influencing the magnitude of the spin splitting and the direction of electron spin. The Rashba spin splitting presents in the step quantum wells due to the interface related Rashba effect even without external electric field or magnetic field.     

Temperature-Dependent Electron Transport in In0.5Ga0.5 P/GaAs Grown by MOVPE

Hall effect measurements in undoped In0.5Ga0.5 P/GaAs allo grown by metal organic vapour-phase epitaxy （MOVPE） have been carried out in the temperat.ure range 15-350K. The experimenta.1 results are analysed using a two-band model including conduction band transport calculated using an iterative solution of the Boltz- mann equation. A good agreement was obtained between theory and experiment. The impurity contents of In0.5Ga0.5 P/GaAs alloy, such as donor density ND, acceptor density NA and donor activation energy εD, were also determined.     

Electric Field Control of Interface Related Spin Splitting in Step Quantum Wells

Spin splitting of the Aly Ga1-y As/GaAs/A1x Ga1-x As/A1-y Ga1-y As （x ≠ y） step quantum wells （ Q Ws） has been theoretically investigated with a model that includes both the interface and the external electric field contribution. The overall spin splitting is mainly determined by the interface contribution, which can be well manipulated by the external electric field. In the absence of the electric field, the Rashba effect exists due to the internal structure inversion asymmetry （SIA）. The electric field can strengthen or suppress the internal SIA, resulting in an increase or decrease of the spin splitting. The step QW, which results in large spin splitting, has advantages in applications to spintronic devices compared with symmetrical and asymmetrical QWs. Due to the special structure design, the spin splitting does not change with the external electric field.     

Beating patterns in the oscillatory magnetoresistance of an AlGaN/GaN heterostructure

Magneto-transport measurements have been carried out on a modulation-doped Al_0.22Ga_0.78N/GaN heterostructure in a temperature range between 1.5 and 25 K with a rather high carrier density, 1.1×10¹³ cm⁻². Striking beating patterns in magnetoresistance vs magnetic field are observed in the vicinity of a special temperature. Theoretical simulation is performed and the comparison between numerical simulations and the experimental data reveals that the beating patterns are due to the interference of the magneto-intersubband scattering and the SdH oscillator of first subband.     

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al_0.22Ga_0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τ_t/τ_q∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin-orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T⁻¹ law, indicating that electron-electron scattering with small energy transfer is the dominant inelastic process.     

Properties of AlyGa1-yN/AlxGa1-xN/AlN/GaN Double-Barrier High Electron Mobility Transistor Structure

Electrical properties of Al_yGa_1-yN/Al_xGa_1-xN/AlN/GaN structure are investigated by solving coupled Schrödinger and Poisson equation self-consistently. Our calculations show that the two-dimensional electron gas (2DEG) density will decrease with the thickness of the second barrier (Al_yGa_1-yN) once the AlN content of the second barrier is smaller than a critical value y_c, and will increase with the thickness of the second barrier (Al_yGa_1-yN) when the critical AlN content of the second barrier y_c is exceeded. Our calculations also show that the critical AlN content of the second barrier y_c will increase with the AlN content and the thickness of the first barrier layer (Al_xGa_1-xN).     

First principles analysis of the MgAl2O4:Ni absorption spectrum

Analysis of the energy-level scheme and absorption spectrum of the Ni²⁺ ion in MgAl₂O₄ was performed. The recently developed first-principles approach to the analysis of the absorption spectra of impurity ions in crystals based on the discrete variational multi-electron (DV-ME) method [K. Ogasawara, et al., Phys. Rev. B 64 (2001) 115413) was used in the calculations. The method is based on the numerical solution of the Dirac equation; no phenomenological parameters are used in the calculations. As a result, complete energy-level scheme of Ni²⁺ and its absorption spectra were calculated, assigned and compared with experimental data on the ground and excited state absorption spectra. Numerical contributions of all possible electron configurations into the calculated energy states were determined. By performing analysis of the molecular orbitals population, numerical contributions of the oxygen 2p- and 2s-orbitals into the 3d molecular orbitals were determined.     

Edge current switch of two-dimensional electron gas using carrier density control

We have investigated the effects of electron density discontinuity on the transports of edge currents of two-dimensional electron gas (2DEG). The electric field applied to a gate, which covers the 2DEG partially, gives rise to change in the carrier density and results in a density gradient, which deforms the edge currents. The transverse and longitudinal resistances were measured as functions of gate voltage V_G in the quantum Hall regime. The deviations of the longitudinal resistances from the normal quantum Hall resistances are attributed to the reflections of the edge currents under the influence of the abrupt density discontinuity. A switching behavior of the transverse resistance by controlling the gate voltage was observed when V_G=−2.2 and −2.0 V for magnetic field H=5 and 7.2 T, respectively.     

Crystal growth, spectroscopic and crystal field studies of [N(CH3)4]2MnCl4 and [N(CH3)4]2CoCl4 single crystals in the paraelectric phase

Single crystals [N(CH₃)₄]₂MnCl₄ and [N(CH₃)₄]₂CoCl₄ were grown by the slow evaporation technique from the super-saturated solutions. The samples obtained were undergone the X-ray and spectroscopic studies. Absorption spectra in the paraelectric phase at T=303 K have been recorded using the Shimadzu 160A double beam automatic scanning spectrophotometers. On the basis of the exchange charge model and Racah theory the crystal field parameters and Racah parameters have been calculated; all absorption bands for both crystals were given an assignment.     

Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas （2DEG） is very sensitive to neutrons. At a low fluence of 6.13 × 10^15 cm^-2, the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 × 10^16 cm^-2, the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit （product of ns×μ ） of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of ns × μ of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of GeGa transmuted from Ga and the recovery of displaced defects.     

Crystal field analysis of energy level structure of the Cr2O3 antiferromagnet

A detailed analysis of the energy level structure of the six-fold coordinated Cr³⁺ ion in the chromium oxide Cr₂O₃ is performed using the exchange charge model of the crystal field theory. Parameters of the crystal field acting on the Cr³⁺ optical electrons are calculated from the crystal structure data for the [CrO₆]⁹⁻ impurity center. The energy levels obtained are compared with the experimental absorption spectra for the considered crystal; a good agreement with experimental data is demonstrated. One possible explanation for the ultraviolet p₁ absorption band is proposed based on the results of crystal field calculations.     

Spin-polarized transport in ferromagnet/Rashba quantum dot/ferromagnet system

The transport properties of the Datta and Das's spin transistor with the center normal region (or the quantum dot) having Rashba spin–orbit interaction and electron–electron (e–e) interaction U are investigated. We find while intra-dot level is near or above the chemical potential of the leads, the modulation efficiency of this spin transistor almost is not influenced by U. On the other hand, when the level is below the chemical potential, e–e interaction U may affect the modulator efficiency, because in this case the existence of e–e interaction can change the transport properties of the quantum dot. But the modulation efficiency still keep enough large and the spin transistor can effectively work.     

Chemical pressure effect on the magnetic order of the La1.4Sr1.6Mn2O7 bilayered manganite

In this paper we have studied, by means of high-resolution neutron powder diffraction, the structural and magnetic feature of pure La_1.4Sr_1.6Mn₂O₇ and Sr-doped (25%) La_1.4Sr_1.6Mn₂O₇.Our data reveal the stabilization of the A-type AFM long-range order for the La_1.4Sr_1.6Mn₂O₇ bilayered manganites induced by the partial replacement of the Sr with the smaller Ca, keeping constant the hole doping. This can be in turn due to the change in the orbital character of the e_g electrons as a function of Ca-doping.     

Persistent spectral holes in external fields

Experimental results and model calculations of the effects of an external electric field on persistent spectral holes are reviewed. Hole-burning spectroscopy of impurity centers in crystals and amorphous solids yields information on various properties of the centers and their interaction with the electric field. The applications of persistent spectral hole burning presented in this paper include: optical-data storage in the electric-field dimension, modulation and pulse shaping of light beams, determination of the Debye-Waller factor of host-guest systems with strongly inhomogeneously broadened transitions, detection of ultra-sound and high-frequency acoustic phonons. The effects of a magnetic field and external pressure on persistent spectral holes are discussed.     

Anomalous Hall effect in a two-dimensional electron gas with Rashba and Dresselhaus spin-orbit interaction

We discuss the mechanism of the anomalous Hall effect in a Rashba-Dresselhaus two-dimensional electron gas subjected to a homogeneous out-of-plane magnetization. On the basis of a systematic treatment of the kinetic equations for the spin-density matrix, results are derived for the dynamic Hall conductivity in a closed form. Its nonanalytic dependence on both the scattering time and the frequency of the applied electric field is discussed. Except for in a special Rashba-Dresselhaus model, there is a finite intrinsic anomalous Hall effect, which is extremely sensitive to short-range elastic scattering.     

Mott-type hopping conduction in the ordered and disordered phases of LiCoO2

The temperature dependence of dc resistance was observed in the range of for layered-rock-salt (hexagonal structure, ordered distribution between Li and Co) and modified-spinel (cubic, random distribution) phases of LiCoO₂. The results suggest Mott-type hopping conduction arising from the localized Co-3d electrons in the valence band. The densities of states (DOS) at the Fermi energy (E_F) estimated from the slope of the resistance curves were 2.0×10²⁰ and 5.5×10¹⁹ cm⁻³ eV⁻¹ for the ordered and disordered phases, respectively. The relatively low DOS at E_F in the disordered phase suggests that E_F approaches the edge of the valence band as a result of the narrowing of Co-t_2g bands due to the higher lattice symmetry in the disordered phase.     

Magnetic structure and collective Jahn-Teller distortions in nanostructured particles of CuFe2O4

The aim of the present work is to compare the structural, the composition and chemical state of the surface and magnetic properties of different nanosized CuFe₂O₄ powders exhibiting collective Jahn-Teller effect. The samples under examination consist of edged nanosized particles (needle like) with average length 1300 ± 20 nm and diameter 300 ± 20 nm obtained after high temperature synthesis, and superparamagnetic (at room temperature) spherical particles (d = 6 ± 2 nm), obtained by soft chemistry techniques. The surface composition of the particles was investigated by X-ray photoelectron spectroscopy (XPS). Mössbauer spectroscopy (MöS), including at high magnetic field up to 5 T and 4.2 K, was used for characterization of cation distribution in the samples. The data yielded by the XPS and MöS analyses for spherical nanosized particles led us to the assumption for the existence of a Jahn-Teller effect gradient—from the B-sublattice on the surface to a compensation of the tetragonal distortion in the two sublattices in the core. The analysis of the contribution of the anisotropy energy in edged and spherical nanoparticles shows that it must be considered as an effective value reflecting the influence of the individual factors depending on the particle shape and surface.     

Spin Transport in the Presence of Rashba Interaction

A Gaussian type spin-polarized electronic wave packet is constructed to investigate the spin transport behaviour in an infinite two-dimensional electron gas system with Rashba spin--orbit (SO) interaction by solving the Schrödinger equation exactly. In the presence of Rashba SO interaction, the spin-dependent force induces a momentum dependent splitting of the two spin directions, the average spin current indicates the corresponding spin accumulation clearly. Furthermore, the coherence of the injected spin-polarized wave packet, as well as the transverse force, decays during the motion in the Rashba SO regime.     

Low-cost 3D nanocomposite solar cells obtained by electrodeposition of CuInSe2

Thin CuInSe₂ films have been prepared by electrodeposition from a single bath aqueous solution on both dense and nanoporous TiO₂. The films are deposited potentiostatically using a N₂-purged electrolyte at different potentials. Various deposition times and solution compositions have been employed. The effect of annealing in air and in argon at different temperatures and times is also investigated. Thin films and nanocomposites of TiO₂ and CuInSe₂ have been studied with electron microscopy, X-ray diffraction, Raman spectroscopy, and optical absorption spectroscopy. After a thermal anneal in argon at 350 °C for 30 min excellent CuInSe₂ is obtained. In particular the nominal crystal structure and the bandgap of 1.0 eV are found. Although pinholes are present occasionally, good samples with diode curves showing a rectification ratio of 24 at ±1 V are obtained. Upon irradiation with simulated solar light of 1000 W m⁻² a clear photoconductivity response is observed. Furthermore, also some photovoltaic energy conversion is found in TiO₂|CuInSe₂ nanocomposites.