Diamond-like carbon coatings for the protection of metallic artefacts: effect on the aesthetic appearance

Plasma-enhanced chemical vapour deposition (PECVD) is an environmentally friendly process used to deposit a variety of nano-structured coatings for the protection or the surface modification of metallic artefacts like the SiO₂-like films that have been successfully tested on ancient silver, bronze and iron artefacts as barriers against aggressive agents. This paper deals with the preliminary results of a wider investigation aimed to the development of eco-sustainable coatings for the protection of Cu and Ag-based artefacts of archaeological and historic interest. Diamond-like carbon (DLC) coatings have been deposited by PECVD in different experimental conditions, in a capacitively coupled asymmetric plasma reactor, placing the substrates either on electrically powered electrode (cathodic mode) or grounded electrode (anodic mode) with and without hydrogen addition in the gas mixture. The final goal is to develop a coating with good protective effectiveness against aggressive atmospheres and contemporarily with negligible effects on the aesthetic appearance of the artefacts. The evaluation of possible colour changes of the surface patinas, due to coating process, was performed by optical microscopy and colorimetric measurements. Furthermore, to evaluate the reversibility of the thin DLC layer, an etching treatment in oxygen plasma has been successfully carried out and optimized. The chemical-physical characterization of the deposited DLC coatings was performed by means of the combined use of micro-Raman and XPS spectroscopies. The results show that the DLC films obtained in the anodic mode, may be proposed as a viable alternative to polymeric coatings for the protection of metallic ancient objects.     

Structural and compositional analyses of nanocrystalline diamond/β-SiC composite films

Nanocrystalline diamond/β-SiC composite films are synthesized by microwave plasma chemical vapor deposition using a gas mixture of H₂, CH₄, and tetramethylsilane (Si(CH₃)₄, TMS) in a single process step. Structural and compositional analyses revealed that the films consist of a mixture of diamond and β-SiC nanocrystalline phases in a desired volume fraction combinatorial form. Transmission electron microscopy analysis confirmed the X-ray diffraction results and showed that the major diffraction lines corresponded to a two-component nanocrystalline composite film. Infrared spectroscopic analysis showed that the content of β-SiC in the films can be increased by increasing the TMS concentration. This correlated very well with electron probe microanalysis and Rutherford backscattering analysis that showed an almost linear correspondence of β-SiC content in the films with the TMS concentration in the gas phase. The phase purity of the diamond crystallites decreased with increase in the β-SiC content in the films, as shown by micro Raman scattering studies. Smooth surface morphologies are measured for these films by using atomic force microscopy; the root mean square roughness was 12 ± 1 nm. The β-SiC volume fraction (vol. %) was identified as an important compositional factor to determine any mechanical and frictional properties of these films. PACS 68.55.-a; 68.55.Nq; 68.60.-p     

Chemical states study of Si in SiOx films grown by PECVD

Thin films of SiO_x have been grown by low temperature (350°C) plasma enhanced chemical vapor deposition (PECVD), and the local chemical bond of Si and O has been investigated by infrared (IR) spectroscopy, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy (AES). Comparisons between the IR spectra of Si-rich oxides (SiO_x, x < 2) and the corresponding spectra of stoichiometric SiO₂ and low oxygen content a-Si:H:O alloys demonstrates a continuous variation in the character of the Si-O stretching, bending and rocking vibrations as a function of the oxygen concentration. In particular, the frequency of the dominant stretching vibration displays a linear frequency shift with the relative oxygen concentration. A similar behavior prevails in the XPS spectra where the position of the Si2p core states shifts monotonically with increasing oxygen concentration from a value of about 98.8 eV in a-Si to 103.1 eV in a-SiO₂. The IR and XPS then reflect the average chemical bonding in these films. In contrast, the AES spectra of suboxides display two strong features in the SiL₂₃VV spectrum. We show that one of these features at approximately 78 to 80 eV is associated with ejection of electrons from Si-O valence bonding states, and a second at about 90 eV is associated with ejection of electrons from Si-Si bonding states. Therefore, the AES spectra reflects the details of the local bonding, i.e., the relative numbers of Si-O and Si-Si bonds, while the IR and XPS spectra reflect the average chemical bonding. In this context, the combination of the three techniques confirms that the suboxide fims produced by this low temperature PECVD process are homogeneous, in contrast to being two phases with regions of a-Si and a-SiO₂.     

Microstructural investigation of CaxCo4Sb12 films prepared by pulsed laser deposition

Ca_xCo₄Sb₁₂ skutterudite thin films have been synthesized by pulsed laser deposition from a Nd:YAG laser working at 532 or 355 nm. The influence of deposition temperature, laser fluence and working atmosphere on the structure and morphology of the films has been studied. The characterization has been carried out by X-ray diffraction, atomic force microscopy and scanning electron microscopy. Laser wavelength proved to be the most significant parameter to produce the skutterudite phase. PACS 81.15.Fg; 68.55.Jk; 81.05.Bx     

Structure and morphology of laser-ablated WO3 thin films

The structure and surface morphology of WO₃ thin films deposited by a laser-ablation technique have been found to be strongly dependent on the deposition conditions and the nature of the substrate. By precisely controlling the substrate temperature and the oxygen partial pressure, amorphous, polycrystalline, nano-crystalline and iso-epitaxial WO₃ thin films were successfully grown. The structure and surface morphological features of the films from X-ray diffraction and atomic force microscopy data are described in relation to the deposition conditions. PACS 81.15.Fg; 68.55.-a; 68.37.Ps     

Al2O3 thin films by plasma-enhanced chemical vapour deposition using trimethyl-amine alane (TMAA) as the Al precursor

2 O₃ thin films by plasma-enhanced chemical vapour deposition (PECVD) using trimethyl-amine alane (TMAA) as the Al precursor. The thin films were deposited on both Si and quartz silica (SiO₂) substrates. Deposition rates were typically 60 Å min^-1 keeping the TMAA temperature constant at 45 °C. The deposited Al₂O₃ thin films were stoichiometric alumina with low carbon contamination (0.7–1.3 At%). The refractive index ranged from 1.54 to 1.62 depending on the deposition conditions. The deposition rate was studied as a function of both the RF power and the substrate temperature. The structure and the surface of the deposited Al₂O₃ thin films were studied using X-ray diffraction, atomic force microscopy (AFM) and scanning electron microscopy (SEM). Received: 20 May 1997/Accepted: 12 June 1997     

Structure, morphology and optical properties of SiO2−x thin films prepared by plasma-assisted pulsed laser deposition

The amorphous silicon oxide SiO_2−x thin films were prepared by the plasma-assisted pulsed laser deposition (PLD) method. X-ray diffraction spectrometry (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), UV-VIS-NIR scanning spectrophotometry and ellipsometry were used to characterize the crystallinity, microscopic morphology and optical properties of obtained thin films. The influences of substrate temperatures, oxygen partial pressures and oxygen plasma assistance on the compositions of silicon oxide (SiO_2−x) thin films were investigated. Results show that the deposited thin films are amorphous and have high surface quality. Stoichiometric silicon dioxide (SiO₂) thin film can be obtained at elevated temperature of 200 °C in an oxygen plasma-assisted atmosphere. Using normal incidence transmittance, a novel and simple method has been proposed to evaluate the value of x in transparent SiO_2−x thin films on a non-absorbing flat substrate.     

Synthesis and size differentiation of Ge nanocrystals in amorphous SiO2

Germanosilicate layers were grown on Si substrates by plasma enhanced chemical vapor deposition (PECVD) and annealed at different temperatures ranging from 700–1010 °C for durations of 5 to 60 min. Transmission electron microscopy (TEM) was used to investigate Ge nanocrystal formation in SiO₂:Ge films. High-resolution cross section TEM images, electron energy-loss spectroscopy and energy dispersive X-ray analysis (EDX) data indicate that Ge nanocrystals are present in the amorphous silicon dioxide films. These nanocrystals are formed in two spatially separated layers with average sizes of 15 and 50 nm, respectively. EDX analysis indicates that Ge also diffuses into the Si substrate. PACS 68.73.Lp; 61.46.Hk; 61.46.-w; 68.65.Hb; 61.82.Rx     

Effect of O2 gas partial pressure on structures and dielectric characteristics of rf sputtered ZrO2 thin films

Amorphous and polycrystalline zirconium oxide thin films have been deposited by reactive rf magnetron sputtering in a mixed argon/oxygen or pure oxygen atmosphere with no intentional heating of the substrate. The films were characterized by high-resolution transmission electron microscopy (HR-TEM), atomic force microscopy (AFM), spectroscopic ellipsometry (SE), and capacitance versus voltage (C-V) measurements to investigate the variation of structure, surface morphology, thickness of SiO₂-like interfacial layer as well as dielectric characteristics with different oxygen partial pressures. The films deposited at low oxygen partial pressures (less than 15%) are amorphous and dense with a smooth surface. In contrast, the films prepared at an oxygen partial pressure higher than 73% are crystallized with the microstructure changing from the mixture of monoclinic and tetragonal phases to a single monoclinic structure. The film structural transition is believed to be consequences of decrease in the oxygen vacancy concentration in the film and of increase of the energetically neutral particles in the plasma due to an increased oxygen partial pressure. SE measurements showed that significant interfacial SiO₂ growth has taken place above approximately 51%. The best C-V results in terms of relative dielectric constant values are obtained for thin films prepared at an oxygen partial pressure of 15%.     

Description of a hybrid PECVD-PVD process: Application to Zn-Si-O and Ti-Si-O composites thin films

A radio frequency hybrid process where sputtering and plasma enhanced chemical vapour deposition (PECVD) occur simultaneously is studied to describe the specificity it gains when the two techniques are merged. A model is developed to describe how the deposition rate evolves when the flow rate of the PECVD precursor increases. First, it is shown that it is constant below a critical value of the precursor flow rate because of the wind effect due to sputtering that strongly limits the transport of the precursor. Then it increases almost linearly with the precursor flow rate when PECVD and sputtering simultaneously occur. Finally, above a certain threshold in the precursor flow rate, the surface of the target is poisoned by the precursor and composite thin films can no longer grow. The previous model is deduced from results obtained in deposition of Zn-Si-O and Ti-Si-O thin films. These composites are synthesised respectively by sputtering of zinc and titanium targets in a vapour of oxygen and hexamethyldisiloxane (HMDSO-Si₂C₆H₁₈O). Limitations of the model used are also discussed.     

Effect of heat treatment on chemical and electronic structure of solid SiO : An electron spectroscopy study

Photoelectron spectroscopy (XPS and UPS) and X-ray excited Auger electron spectroscopy (XAES) measurements for commercial SiO powder and for SiO thin films show direct evidence for the evolution of the chemical structure of SiO from a characteristic metastable phase to a microscopic mixture of Si and SiO₂ when the temperature increases.     

Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.     

Uncommon corrosion phenomena of archaeological bronze alloys

In the framework of the EFESTUS project (funded by the European Commission, contract No. ICA3-CT-2002-10030) the corrosion products of a large number of archaeological bronze artefacts are investigated by means of the combined use of scanning electron microscopy (SEM), energy dispersive spectrometry (EDS), X-ray diffraction (XRD) and optical microscopy (OM) and tentative correlation of their nature with the chemical composition of the artefacts and the burial context is proposed.The results provide good insight into the corrosion layers and evidence in some bronze Roman coins and artefacts; the occurrence of uncommon corrosion phenomena that give rise to the formation of a yellowish-green complex chlorine-phosphate of lead (pyromorphite, (PbCl)Pb₄(PO₄)₃) and of a gold-like thick layer of an iron and copper sulphide (chalcopyrite, CuFeS₂). The micro-chemical and micro-structural results show that the coins were buried in a soil enriched in phosphorus for the accidental presence of a large amount of decomposing fragments of bones or in an anaerobic and humus rich soil where the chalcopyrite layer has been produced via the interaction between the iron of the soil, the copper of the coin and the sulphur produced by the decomposition of organic matter in an almost oxygen free environment. Finally, some unusual periodic corrosion phenomena occurring in high tin bronze mirrors found at Zama (Tunisia) are described. PACS 68.55Jk; 68.35 Dv; 68.37Hk; 68.55 Nq; 81.05 Bx     

Secondary ion species containing nitrogen atoms from plasma-enhanced chemical vapor deposited silicon oxide films on silicon

Secondary ion species from plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films have been investigated using time-of-flight secondary ion mass spectrometry (TOF-SIMS). Comparative studies of PECVD SiO₂ films prepared using a mixture of SiH₄/N₂O reaction gas at 400 °C with thermally oxidized SiO₂ films grown at 900 °C were carried out in the mid-range mass spectra from 95 to 165 amu. Small amounts of ion species containing nitrogen atoms, including Si₂O₂N⁺, Si₃O₂N⁺and Si₃O₃N⁺, were detected in the SiO₂ bulk from the PECVD SiO₂ films. Furthermore, large amounts of Si₃O₂N⁺ and Si₂O₃N⁻ were found at the interface between silicon and the SiO₂ films. Depth analysis showed that the intensity peak shapes of these ion species containing nitrogen atoms at the interface were closely coincident with those of Si₃O₃⁺ corrected by subtracting the influence of the SiO₂ matrix. The variation in the spectra of these ion species clearly indicates that two types of structures of oxynitride exist for the PECVD SiO₂ films in the SiO₂ bulk films and at the interface. These are likely produced by the reaction of reactive gas with SiO₂ and silicon surfaces where dangling bonds of silicon may exist in the different form.     

Effect of the oxygen flow rate on the structure and the properties of Ag-Cu-O sputtered films deposited using a Ag/Cu target with eutectic composition

Ag-Cu-O films were deposited on glass substrates by reactive sputtering of a composite Ag₆₀Cu₄₀ target in various Ar-O₂ mixtures. The films were characterised by energy dispersive X-ray analysis, X-ray diffraction, UV-visible spectroscopy and using the four point probe method. The structure of the films is strongly dependent on the oxygen flow rate introduced in the deposition chamber. The variation of the oxygen flow rate allows the deposition of the following structures: Ag-Cu-(O) solid solution, nc-Ag + nc-Cu₂O, nc-Ag + nc-(Ag,Cu)₂O and finally X-ray amorphous. UV-visible reflectance measurements confirm the occurrence of metallic silver into the deposited films. The increase of the oxygen flow rate induces a continuous increase of the film oxygen concentration that can be correlated to the evolution of the film reflectance and the film electrical resistivity. Finally, the structural changes vs. the oxygen content are discussed in terms of reactivity of sputtered atoms with oxygen.     

Characteristics of N-doped TiO2 thin films grown on unheated glass substrate by inductively coupled plasma assisted dc reactive magnetron sputtering

N-doped TiO₂ thin films have been deposited on unheated glass substrates by an inductively coupled plasma (ICP) assisted direct current (dc) reactive magnetron sputtering. All films were produced in the metallic mode of sputtering in order to achieve a high deposition rate. The structures and properties of the N-doped TiO₂ films were studied by X-ray diffraction, X-ray photoelectron spectroscopy, transmission electron microscopy, field emission scanning electron microscopy and UV–Vis spectrophotometer. Experimental results show that we can obtain well crystallized N-doped anatase phase TiO₂ thin films at low deposition temperature and at high deposition rate by using the ICP assisted dc reactive magnetron sputtering process. The doping of nitrogen into TiO₂ lattices leads to a smooth shift of the absorption band toward visible light regions.     

Reactive sputter deposition and metal–semiconductor transition of FeS films

FeS polycrystalline films were prepared on float glass by radio-frequency reactive sputtering. X-ray diffraction, scanning electron microscopy, Rutherford backscattering, and secondary ion mass spectroscopy were used to characterize the films. The effects of the deposition parameters, such as sputter power and substrate temperature, on the morphological structure and on the metal–semiconductor phase transition of FeS films were investigated. It has been found that the films show a substrate temperature dependent preferential orientation and phase-transition temperature. PACS 81.15.Cd; 68.55.Jk     

Fabrication and characterization of Au/SiO2 nanocomposite films grown by radio-frequency cosputtering

Au/SiO₂ nanocomposite films were prepared on Si wafers by cosputtering of SiO₂ and gold wires. Au/Si atomic ratios in Au/SiO₂ nanocomposite films were varied from 0.53 to 0.92 by controlling the length of gold wire to study the evolution of the crystallization of gold, the size of Au/SiO₂ nanocomposite particles, and the optical properties of as-deposited Au/SiO₂ nanocomposite films. An X-ray photoelectron spectroscopy reveals that Au exists as a metallic phase in the bulk of SiO₂ matrix. Dome-shaped Au/SiO₂ nanocomposite particles and both Au (1 1 1) and (2 0 0) planes were observed in a field-emission scanning electron microscopy and X-ray diffraction studies respectively. With an ultraviolet-visible, absorption peaks of Au/SiO₂ nanocomposite films were observed at 525 nm.     

反应溅射VN/SiO2纳米多层膜的微结构与力学性能

采用V和SiO₂靶通过反应溅射方法制备了一系列具有不同SiO₂和VN调制层厚的VN/SiO₂纳米多层膜. 利用X射线衍射、X射线能量色散谱、高分辨电子显微镜和微力学探针表征了多层膜的微结构和力学性能. 结果表明：在Ar，N₂混和气体中，射频反应溅射的SiO₂薄膜不会渗氮. 单层膜时以非晶态存在的SiO₂，当其厚度小于1nm时，在多层膜中因VN晶体层的模板效应被强制晶化，并与VN层形成共格外延生长. 相应地，多层膜的硬度得到明显提高，最高硬度达34GPa. 随SiO₂层厚度的进一步增加，SiO₂层逐渐转变为非晶态，破坏了与VN层的共格外延生长结构，多层膜硬度也随之降低. VN调制层的改变对多层膜的生长结构和力学性能也有影响，但并不明显. 关键词： 2纳米多层膜')" href="#">VN/SiO₂纳米多层膜 共格外延生长 非晶晶化 超硬效应     

Analysis of intensities of positive and negative ion species from silicon dioxide films using time-of-flight secondary ion mass spectrometry and electronegativity of fragments

Intensities of positive and negative ion species emitted from thermally oxidized and plasma-enhanced chemical vapor deposited (PECVD) SiO₂ films were analyzed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) and the Saha-Boltzmann equation. Intensities of positive and negative secondary ion species were normalized to those of ²⁸Si⁺ and ²⁸Si⁻ ions, respectively, and an effective temperature of approximately (7.2 ± 0.1) × 10³ K of the sputtered region bombarded with pulsed 22 kV Au₃⁺ primary ions was determined. Intensity spectra showed polarity dependence on both n and m values of Si_nO_m fragments, and a slight shift to negative polarity for PECVD SiO₂ compared to thermally oxidized SiO₂ films. By dividing the intensity ratios of negative-to-positive ions for PECVD SiO₂ by those for thermally oxidized SiO₂ films to cancel statistical factors, the difference in absolute electronegativity (half the sum of ionization potential and electron affinity of fragments) between both films was obtained. An increase in electronegativity for SiO_m (m = 1, 2) and Si₂O_m (m = 1-4) fragments for PECVD SiO₂ films compared to thermally oxidized films was obtained to be 0.1-0.2 Pauling units, indicating a more covalent nature of Si-O bonds for PECVD SiO₂ films compared to the thermally oxidized SiO₂ films.