InGaAs/GaAs saturable absorber for diode-pumped passively Q-switched mode-locking of Tm:YAP laser

A passively Q-switched mode-locking of diode-pumped TmYAP laser by use of InGaAs/GaAs as a saturable absorber is reported. The maximum Q-switched mode-locking output power was 480 mW near the wavelength range of 1.94 μm with pulse repetition frequency of 26.47 kHz. The beam quality was also measured to be 1.12 ± 0.02.     

Yb-doped passively mode-locked fiber laser with Bi_2Te_3-deposited

In this study we present an all-normal-dispersion Yb-doped fiber laser passively mode-locked with topological insulator(Bi2Te3) saturable absorber. The saturable absorber device is fabricated by depositing Bi2Te3 on a tapered fiber through using pulsed laser deposition(PLD) technology, which can give rise to less non-saturable losses than most of the solution processing methods. Owing to the long interaction length, Bi2Te3 is not exposed to high optical power, which allows the saturable absorber device to work in a high power regime. The modulation depth of this kind of saturable absorber is measured to be 10%. By combining the saturable absorber device with Yb-doped fiber laser, a mode-locked pulse operating at a repetition rate of 19.8 MHz is achieved. The 3-d B spectral width and pulse duration are measured to be 1.245 nm and317 ps, respectively.     

High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime

We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. Passive Q-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO(4) crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 nm, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 microJ energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.     

Erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well saturable absorber

We report on the behavior of an erbium-doped fiber laser passively Q-switched by an InGaAs/InP multiple quantum well semiconductor saturable absorber. The fiber is moderately doped in erbium ions. The saturable absorber consists of 40 periods of InGaAs (8.5 nm)/InP (10 nm) grown on an InP substrate. The laser efficiency is nonlinear under Q-switch regime and unusual temporal pulse shapes with rising times lower than decay times are observed around threshold. Pulse duration is around the microsecond range. Simple arguments based on a rate-equations approach are proposed in order to explain our results. They are justified a posteriori via numerical integration of the equations. The variation of threshold level versus spectroscopic parameters has been determined and that makes a guideline for generalizing our discussion.     

Tunable passively Q-switched ytterbium-doped fiber laser using MoWS2/rGO nanocomposite saturable absorber

We demonstrated a tunable Q-switched ytterbium-doped fiber laser (YDFL) using MoWS₂/rGO nanocomposite as passive saturable absorber. Further, the Mo_1?xW_xS₂/rGO nanosheets, with x proportion of 0.2, are synthesized using hydrothermal exfoliation technique. The proposed nanocomposite-PVA based thin film is fabricated by mixing the MoWS₂/rGO nanosheets with polyvinyl alcohol (PVA). The fabricated thin film is sandwiched between two fiber ferrules to realize the proposed saturable absorber (SA). Further, the proposed MoWS₂/rGO-PVA based thin film SA exhibits a fast relaxation time and a high damage threshold which are suitable to realize a Q-switched pulsed laser with a tunable wavelength range of 10?nm that extends from 1028?nm to 1038?nm. For the highest pump power of 267.4?mW, the generated Q-switched pulses exhibit a narrow pulse width of 1.22 μs, the pulse repetition rate of 90.4?kHz, the highest pulse energy of 2.13?nJ and its corresponding average power of 0.193?mW. To the best of author’s knowledge, this is the first realization of a tunable Q-switching fiber laser in a 1?μm wavelength using MoWS₂/rGO nanocomposite saturable absorber.     

Yb-Bi pulsed fiber lasers

A new type of pulsed fiber laser is suggested and developed - Yb-Bi lasers. In such lasers the Yb fiber laser is Q-switched by use of a saturable absorber, a Bi-doped fiber placed in its own resonator, and pulsed lasing is obtained in both fiber lasers. Continous-wave diode-clad pumping of the Yb-Bi lasers at a 975 nm wavelength with power up to 16.5 W results in pulsed laser action in a spectral diapason of 1050-1200 nm with a maximum pulse energy of up to 100 microJ, an average power up to 7.5 W, and a repetition rate up to 100 kHz.     

2 μm波段半导体可饱和吸收镜被动调Q光纤激光器

基于半导体可饱和吸收镜和光纤光栅实现了稳定的2 m波段被动调Q光纤脉冲激光器,输出激光的中心波长为1958.2 nm。随着泵浦功率的增加,输出脉冲的重复频率不断增加,而对应脉冲的宽度不断减小。输出脉冲重复频率的变化范围为20～80 kHz,脉冲宽度的变化范围为490 ns～1 s。当泵浦功率为1.3 W时,调Q光纤激光器的最大平均输出功率为91 mW,脉冲重复频率为80 kHz,脉冲宽度为490 ns,对应的最大单脉冲能量约为1.14 J。     

Multi-wavelength Q-switched erbium doped fiber laser with a short carbon nanotube based saturable absorber

We demonstrate an all-fiber passively multi-wavelength Q-switched Erbium doped fiber laser (EDFL) based on a short Carbon Nanotube based saturable absorber. With the saturable absorber connected in a longer standing wave based fiber laser cavity, stable single, dual, and multiple wavelength Q-switched low threshold EDFL are achieved. Experimental results show that the output pulse of the filtered single wavelength has the same repetition rate as that of the multi-wavelength output while its average output power is lower than that of the multi-wavelength output.     

碳纳米管锁模双包层光纤激光器的实验研究

本文采用双包层掺镱光纤作为增益介质,用单壁碳纳米管作为饱和吸收体,获得最高输出功率为336 mW的锁模脉冲激光.用飞秒激光诱导水击穿法直接在单模光纤上制备出D形区,通过在D形光纤上滴涂单壁碳纳米管溶液,成功制备出碳纳米管饱和吸收体,并对其饱和吸收特性进行测试,发现其调制深度为27％.利用该饱和吸收体作为锁模器件,制备出具有环形腔结构的锁模光纤激光器.当抽运功率为4W时,获得了脉宽为93.8 fs,中心波长为1083.8 nm,3 dB谱宽为8.6 nm,重复频率为5.59 MHz,平均功率为336 mW的飞秒脉冲激光输出.     

2 μm波段半导体可饱和吸收镜被动调Q光纤激光器

基于半导体可饱和吸收镜和光纤光栅实现了稳定的2 m波段被动调Q光纤脉冲激光器,输出激光的中心波长为1958.2 nm。随着泵浦功率的增加,输出脉冲的重复频率不断增加,而对应脉冲的宽度不断减小。输出脉冲重复频率的变化范围为20～80 kHz,脉冲宽度的变化范围为490 ns～1 s。当泵浦功率为1.3 W时,调Q光纤激光器的最大平均输出功率为91 mW,脉冲重复频率为80 kHz,脉冲宽度为490 ns,对应的最大单脉冲能量约为1.14 J。     

Passively mode-locked Yb:YAG thin-disk laser with pulse energies exceeding 13 microJ by use of an active multipass geometry

We demonstrate the generation of high-energy picosecond pulses directly from a thin-disk laser oscillator by employing a self-imaging active multipass geometry. Stable single-pulse operation has been obtained with an average output power in excess of 50 W, excluding a cw background of 8%, at a repetition rate of 3.8 MHz. Self-starting passive mode locking was accomplished using a semiconductor saturable absorber mirror. The maximum pulse energy was 13.4 microJ at a pulse duration of 1.36 ps with a time-bandwidth product of 0.34. Single-pass external frequency doubling with a conversion efficiency of 60% yielded >28 W of average power at 515 nm.     

基于金属/介质混合反射镜的高调制深度半导体可饱和吸收镜锁模的飞秒光纤激光器

介绍了一种新型半导体可饱和吸收镜(SESAM)的原理与特性,并用它来实现掺铒光纤激光器的锁模飞秒脉冲的生成.这种新型宽带SESAM调制深度可以达到20%,用在1.5μm波段的环形腔掺铒光纤激光器里,实现自启动锁模.锁模光谱以1559 nm为中心,半峰全宽为9 nm,锁模激光脉冲串重复频率为25.6 MHz,输出功率14 mW,自相关仪测得脉宽为170 fs.     

Pulse energy scaling to 5 microJ from a femtosecond thin disk laser

We report an increase in pulse energy to 5.1 microJ obtained directly from a femtosecond diode-pumped Yb:YAG thin disk laser without external amplification. Stable passive mode locking was obtained with a semiconductor saturable absorber mirror (SESAM). The laser delivers 63 W of average output power in a nearly diffraction-limited beam (M2=1.1) at a center wavelength of 1030 nm. The pulse repetition rate is 12.3 MHz, and the pulses have a duration of 800 fs, which results in a peak power of 5.6 MW. The laser was operated in a box flooded with helium because the nonlinearity of air was found to be a limiting factor for the stability of the pulse formation at increasing pulse energies.     

Toward higher-order passive harmonic mode-locking of a soliton fiber laser

We report >13 MHz/mW pump power efficiency in increasing the repetition rate of passive harmonic mode-locking by engineering the soliton pulse energy in Er fiber lasers incorporating carbon nanotube saturable absorber. Stable pulses with a ～5 GHz repetition rate and 40 dB of super-mode suppression are demonstrated with only ～400 mW pump power in a single-clad fiber laser.     

Efficient passively Q-switched laser operation of Yb in the disordered NaGd(WO4)2 crystal host

Efficient passively Q-switched laser operation of the disordered Yb:NaGd(WO(4))(2) crystal is demonstrated for the first time to our knowledge with a Cr(4+):YAG saturable absorber by diode end pumping. 2.05 W of average output power at a pulse repetition frequency of 13.3 kHz was obtained at an absorbed pump power of 7.7 W, with a slope efficiency of 40%. The energy and duration of the generated laser pulse were 154 microJ and 33 ns, respectively, corresponding to a peak power of 4.67 kW. In continuous-wave operation, the Yb:NaGd(WO(4))(2) laser yielded an output power of 5.5 W with an optical-optical efficiency of 51%.     

Stable nanosecond pulse generation from a graphene-based passively Q-switched Yb-doped fiber laser

We demonstrate stable 70?ns pulse generation from a Yb-doped fiber laser passively Q-switched by a graphene-based saturable absorber mirror in a short linear cavity. The maximum output power was 12?mW and the highest single pulse energy was 46?nJ. The repetition rate of the fiber laser can be widely tuned from 140 to 257?kHz along with the increase of the pump power. To the best of our knowledge, this is the first report for passively Q-switched sub-100-ns pulse operation of a graphene-based saturable absorber in a Yb-doped fiber laser.     

Development of a high-pulse-energy Q-switched Tm-doped double-clad fluoride fiber laser and its application to the pumping of mid-IR lasers

A diode-pumped Q-switched Tm-doped double-clad fluoride fiber laser is reported providing up to 90 microJ pulse energy (160 ns, 100 kHz, i.e., 9 W of average power). The dependence of the fiber laser's repetition rate on pump power and modulator repetition rate was investigated. By amplification even higher pulse energies of 410 microJ could be generated. In a second stage of the setup the Q-switched fiber laser serves as a pump for a gain-switched tunable Cr2+:ZnSe laser. The pulse energies reported are to the author's knowledge the highest generated by Tm-doped fluoride fiber lasers or amplifiers today.     

Tunable repetition frequency passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

We first report a tunable repetition frequency passively Q-switched 2053 nm Tm,Ho:YLF laser by tuning the tilt angle of the Cr:ZnS saturable absorber. When the pump power is 1.4 W, the pulse repetition frequency can be tuned from 1.6 to 19.4 kHz by changing the position of Cr²⁺:ZnS saturable absorber along the cavity axis. When the Cr²⁺:ZnS saturable absorber is near the Tm,Ho:YLF crystal, the repetition frequency can be tuned from 0.8 to 4.0 kHz by changing the tilt angle of the Cr²⁺:ZnS saturable absorber, furthermore, the pulse width and the pulse energy are near constants of 1.7 μs and 3.5 μJ, respectively.     

Resonantly pumped 1.645 μm high repetition rate Er:YAG laser Q-switched by a graphene as a saturable absorber

A fiber laser resonantly pumped 1.645 μm passively Q-switched Er:YAG laser is reported. Graphene on a silicon carbide was used as the saturable absorber for the Q-switching. The pulse energy of the 1.645 μm Q-switched Er:YAG laser was 7.05 μJ, with a pulse repetition rate of 35.6 kHz and an average output power of 251 mW.     

Mode-locked fiber laser with a manganese-doped cadmium selenide saturable absorber

We demonstrate the generation of mode-locked pulses in an erbium-doped fiber laser(EDFL) by using a new manganese-doped cadmium selenide quantum-dots-based saturable absorber. The laser produces a soliton pulse train operating at 1561.1 nm with a repetition rate of 1 MHz, as the pump power is varied from 113 to 250 m W.At the maximum pump power, we obtain the pulse duration of 459 ns with a signal-to-noise ratio of 50 dB.