Domain wall dynamics driven by spin transfer torque and the spin-orbit field

We have studied current-driven dynamics of domain walls when an in-plane magnetic field is present in perpendicularly magnetized nanowires using an analytical model and micromagnetic simulations. We model an experimentally studied system, ultrathin magnetic nanowires with perpendicular anisotropy, where an effective in-plane magnetic field is developed when current is passed along the nanowire due to the Rashba-like spin-orbit coupling. Using a one-dimensional model of a domain wall together with micromagnetic simulations, we show that the existence of such in-plane magnetic fields can either lower or raise the threshold current needed to cause domain wall motion. In the presence of the in-plane field, the threshold current differs for positive and negative currents for a given wall chirality, and the wall motion becomes sensitive to out-of-plane magnetic fields. We show that large non-adiabatic spin torque can counteract the effect of the in-plane field.     

Phenomenology of current-induced dynamics in antiferromagnets

We derive a phenomenological theory of current-induced staggered magnetization dynamics in antiferromagnets. The theory captures the reactive and dissipative current-induced torques and the conventional effects of magnetic fields and damping. A Walker ansatz describes the dc current-induced domain-wall motion when there is no dissipation. If magnetic damping and dissipative torques are included, the Walker ansatz remains robust when the domain wall moves slowly. As in ferromagnets, the domain-wall velocity is proportional to the ratio between the dissipative torque and the magnetization damping. In addition, a current-driven antiferromagnetic domain wall acquires a net magnetic moment.     

Transient domain wall displacement under spin-polarized current pulses

This paper investigates the non steady-state displacement of magnetic domain walls in a nanostrip submitted to a time-dependent spin-polarized current flowing along the nanostrip. First, numerical micromagnetic simulations show that a domain wall can move under application of a current pulse, and that the displacement resulting from a conversion of the domain wall structure is quantized. The numerical findings are subsequently explained in the framework of simplified analytic models, namely the 1D model and the point-core vortex model. We then introduce the concept of an angle linked to the magnetization of a general domain wall, and show that it allows understanding the transient phenomena quite generally. Simple analytic formulas are derived and compared to experiments. For this, charts are given for the key parameters of the domain wall mechanics, as obtained from numerical micromagnetic simulations. We finally discuss the limitations of this work, by looking at the influence of temperature elevation under current, presence of a non-adiabatic term, and of disorder.     

Current-induced domain wall motion in magnetic nanowires with spatial variation

We model current-induced domain wall motion in magnetic nanowires with the variable width. Employing the collective coordinate method we trace the wall dynamics. The effect of the width modulation is implemented by spatial dependence of an effective magnetic field. The wall destination in the potential energy landscape due to the magnetic anisotropy and the spatial nonuniformity is obtained as a function of the current density. For a nanowire of a periodically modulated width, we identify three (pinned, nonlinear, and linear) current density regimes for current-induced wall motion. The threshold current densities depend on the pulse duration as well as the magnitude of wire modulation. In the nonlinear regime, application of ns order current pulses results in wall displacement which opposes or exceeds the prediction of the spin transfer mechanism. The finding explains stochastic nature of the domain wall displacement observed in recent experiments.     

Berry's phase in the presence of a non-adiabatic environment with an application to magnetic resonance.

We consider a two-level system coupled to an environment that evolves non-adiabatically. We present a non-perturbative method for determining the persistence amplitude whose phase contains all the corrections to Berry's phase produced by the non-adiabatic motion of the environment. Specifically, it includes the effect of transitions between the two energy levels to all orders in the non-adiabatic coupling. The problem of determining all non-adiabatic corrections is reduced to solving an ordinary differential equation to which numerical methods should provide solutions in a variety of situations. We apply our method to a particular example that can be realized as a magnetic resonance experiment, thus raising the possibility of testing our results in the laboratory.     

Investigation of magnetization reversal process in pinned CoFeB thin film by in-situ Lorentz TEM

Exchange bias effect has been widely employed for various magnetic devices.The experimentally reported magnitude of exchange bias field is often smaller than that predicted theoretically,which is considered to be due to the partly pinned spins of ferromagnetic layer by antiferromagnetic layer.However,mapping the distribution of pinned spins is challenging.In this work,we directly image the reverse domain nucleation and domain wall movement process in the exchange biased Co Fe B/Ir Mn bilayers by Lorentz transmission electron microscopy.From the in-situ experiments,we obtain the distribution mapping of the pinning strength,showing that only 1/6 of the ferromagnetic layer at the interface is strongly pinned by the antiferromagnetic layer.Our results prove the existence of an inhomogeneous pinning effect in exchange bias systems.     

Numerical investigation of spin-torque using the Heisenberg model

We present numerical calculations of the spin transfer torque resulting in current-induced domain wall motion. Rather than the conventional micromagnetic finite difference or finite element method, we use an atomistic/classical Heisenberg spin model approach, which is well suited to study geometrically confined domain walls. We compute the behaviour of domain walls in a one dimensional chain when currents are injected using adiabatic and non-adiabatic spin torque terms. Our results are compared to analytical calculations and are found to agree very well for small current densities. At larger current densities deviations are observed, which can be attributed to the approximations used in the analytical calculations.     

Creation of an antiferromagnetic exchange spring

We present evidence for the creation of an exchange spring in an antiferromagnet due to exchange coupling to a ferromagnet. X-ray magnetic linear dichroism spectroscopy on single crystal Co/NiO(001) shows that a partial domain wall is wound up at the surface of the antiferromagnet when the adjacent ferromagnet is rotated by a magnetic field. We determine the interface exchange stiffness and the antiferromagnetic domain wall energy from the field dependence of the direction of the antiferromagnetic axis, the antiferromagnetic pendant to a ferromagnetic hysteresis loop. The existence of a planar antiferromagnetic domain wall, proven by our measurement, is a key assumption of most exchange bias models.     

Indirect control of antiferromagnetic domain walls with spin current

The indirect controlled displacement of an antiferromagnetic domain wall by a spin current is studied by Landau-Lifshitz-Gilbert spin dynamics. The antiferromagnetic domain wall can be shifted both by a spin-polarized tunnel current of a scanning tunneling microscope or by a current driven ferromagnetic domain wall in an exchange coupled antiferromagnetic-ferromagnetic layer system. The indirect control of antiferromagnetic domain walls opens up a new and promising direction for future spin device applications based on antiferromagnetic materials.     

Spin-transfer torques in antiferromagnetic metals from first principles

In spite of the absence of a macroscopic magnetic moment, an antiferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting antiferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in antiferromagnetic noncollinear spin valves and domain walls. We report a first principles study on the electronic transport properties of antiferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to measurable angular resistances and current-induced magnetization dynamics. In contrast to ferromagnets, spin torques in antiferromagnets are very nonlocal. The torques acting far away from the center of an antiferromagnetic domain wall should facilitate current-induced domain wall motion.     

Field sweep rate dynamics in magnetic tunnel junctions

The dynamical behavior of magnetic tunnel junctions (MTJs) was investigated by varying the magnetic field sweep rate from 0.01 mT/s to 10 T/s in a magneto optical Kerr effect set-up. The bias fields of the pinned and free ferromagnetic electrodes were found to drastically decrease above a field sweep rate of 1 T/s. This decrease in the bias fields coincides with a change in the magnetization reversal process from domain wall motion at low-field sweep rates to domain nucleation at high-field sweep rates. The nucleation of inverse domains in the ferromagnetic layer changes the interfacial spin structure of the antiferromagnetic layer and therefore the magnitude of the exchange bias effect. Furthermore, the nucleation of domains induces a discontinuous magnetic charge density at the tunnel barrier interfaces and this reduces the interlayer coupling between the two ferromagnetic electrodes of the MTJ.     

Distinct ferroelectric domain switching dynamics in epitaxial BiFeO3 (001) capacitors depending on the bias polarity

Understanding ferroelectric domain switching dynamics at the nanoscale is a great of importance in the viewpoints of fundamental physics and technological applications. Here, we investigated the intriguing polarity-dependent switching dynamics of ferroelectric domains in epitaxial BiFeO₃ (001) capacitors using transient switching current measurement and piezoresponse force microscopy. We observed the distinct behavior of nucleation and domain wall motion depending on the polarity of external electric bias. When applying the negative bias to the top electrode, the sideways domain wall motion initiated by only few nuclei was dominant to polarization switching. However, when applying the positive bias, most of domains started to grow from the pre-existed pinned domains and their growth velocity was much smaller. We suggest that the observed two distinct domain switching behavior is ascribed to the interfacial defect layer.     

铁磁/反铁磁双层膜系统中的磁畴动力学行为

比较了铁磁单层膜与铁磁/反铁磁双层膜结构中的磁畴演化行为, 发现由于反铁磁层膜对铁磁层膜的耦合作用使得系统的磁畴壁厚度、 磁畴壁等效质量、磁畴壁移动速度等发生了改变, 系统的矫顽场增强, 并出现了交换偏置场. 文章具体研究了反铁磁层耦合作用下其磁畴壁厚度、 等效质量以及磁畴壁移动速度等与反铁磁层的净磁化、 磁各向异性、界面耦合强度以及温度等的关系; 并研究了其对铁磁/反铁磁双层膜中的交换偏置场、矫顽场的影响. 进而 从磁畴结构的形成及其演化上揭示了铁磁/反铁磁双 层膜中出现交换偏置以及矫顽场增加的物理机制.     

The window Josephson junction: a coupled linear nonlinear system

We investigate the interface coupling between the two-dimensional sine-Gordon equation and the two-dimensional wave equation in the context of a Josephson window junction using a finite volume numerical method and soliton perturbation theory. The geometry of the domain as well as the electrical coupling parameters are considered. When the linear region is located at each end of the nonlinear domain, we derive an effective one-dimensional model, and using soliton perturbation theory, compute the fixed points that can trap either a kink or antikink at an interface between two sine-Gordon media. This approximate analysis is validated by comparing with the solution of the partial differential equation and describes kink motion in the one-dimensional window junction. Using this, we analyze steady-state kink motion and derive values for the average speed in the one- and two-dimensional systems. Finally, we show how geometry and the coupling parameters can destabilize kink motion.     

Rashba spin-orbit coupling effects on a current-induced domain wall motion

A current-induced domain wall motion in magnetic nanowires with a strong structural inversion asymmetry [I.M. Miron, T. Moore, H. Szambolics, L.D. Buda-Prejbeanu, S. Auffret, B. Rodmacq, S. Pizzini, J. Vogel, M. Bonfim, A. Schuhl, G. Gaudin, Nat. Mat. 10 (2011) 419] seems to have novel features such as the domain wall motion along the current direction or the delay of the onset of the Walker breakdown. In such a highly asymmetric system, the Rashba spin-orbit coupling (RSOC) may affect a domain wall motion. We studied theoretically the RSOC effects on a domain wall motion and found that the RSOC, indeed, can induce the domain wall motion along the current direction in certain situations. It also delays the Walker breakdown and for a strong RSOC, the Walker breakdown does not occur at all. The RSOC effects are sensitive to the magnetic anisotropy of nanowires and also to the ratio between the Gilbert damping parameter α and the non-adiabaticity parameter β.     

Model for domain wall avalanches in ferromagnetic thin films

The Barkhausen jumps or avalanches in magnetic domain-walls motion between successive pinned configurations, due the competition among magnetic external driving force and substrum quenched disorder, appear in bulk materials and thin films. We introduce a model based in rules for the domain wall evolution of ferromagnetic media with exchange or short-range interactions, that include disorder and driving force effects. We simulate in 2-dimensions with Monte Carlo dynamics, calculate numerically distributions of sizes and durations of the jumps and find power-law critical behavior. The avalanche-size exponent is in excellent agreement with experimental results for thin films and is close to predictions of the other models, such as like random-field and random-bond disorder, or functional renormalization group. The model allows us to review current issues in the study of avalanches motion of the magnetic domain walls in thin films with ferromagnetic interactions and opens a new approach to describe these materials with dipolar or long-range interactions.     

Influence of current on field-driven domain wall motion in permalloy nanowires from time resolved measurements of anisotropic magnetoresistance

The motion of magnetic domain walls in permalloy nanowires is investigated by real-time resistance measurements. The domain wall velocity is measured as a function of the magnetic field in the presence of a current flowing through the nanowire. We show that the current can significantly increase or decrease the domain wall velocity, depending on its direction. These results are understood within a one-dimensional model of the domain wall dynamics which includes the spin transfer torque.     

Dissipative optomechanics in a Michelson-Sagnac interferometer

Dissipative optomechanics studies the coupling of the motion of an optical element to the decay rate of a cavity. We propose and theoretically explore a realization of this system in the optical domain, using a combined Michelson-Sagnac interferometer, which enables a strong and tunable dissipative coupling. Quantum interference in such a setup results in the suppression of the lower motional sideband, leading to strongly enhanced cooling in the non-sideband-resolved regime. With state-of-the-art parameters, ground-state cooling and low-power quantum-limited position transduction are both possible. The possibility of a strong, tunable dissipative coupling opens up a new route towards observation of such fundamental optomechanical effects as nonlinear dynamics. Beyond optomechanics, the suggested method can be readily transferred to other setups involving nonlinear media, atomic ensembles, or single atoms.     

Current induced domain wall motion in nanostripes with perpendicular magnetic anisotropy

We report micromagnetic modeling results of current induced domain wall (DW) motion in magnetic devices with perpendicular magnetic anisotropy by solving the Landau-Lifschitz-Gilbert equation including adiabatic and non-adiabatic terms. A nanostripe model system with dimensions of 500 nm (L)×25 nm (W)×5 nm (H) was selected for calculating the DW motion and its width, as a function of various parameters such as non-adiabatic contribution, anisotropy constant (K_u), saturation magnetization (M_s), and temperature (T). The DW velocity was found to increase when the values of K_u and T were increased and the M_s value decreased. In addition, a reduction of the domain wall width could be achieved by increasing K_u and lowering M_s values regardless of the non-adiabatic constant value.     

Current-driven magnetization switching and domain wall motion in nanostructures—Survey of recent experiments

An overview of recent experimental studies and new routes in the field of current-driven magnetization dynamics in nanostructured materials is given. The review introduces the basic concepts (Landau–Lifshitz phenomenology, critical current, spin currents in relation to spin accumulation, adiabatic/non-adiabatic spin-torque) and describes the main results of recent experiments on current-driven magnetization reversal within vertical pillar-like nanostructures and current-driven domain wall motion within laterally confined specimens. While for the pillar systems a discussion is provided of how the introduction of layers with perpendicular magnetic anisotropy, tunnel barriers and exchange bias and(or) oxide layers can be used to reduce the critical current densities for current-induced switching, the role of perpendicular anisotropy, use of spin valve structures, diluted magnetic semiconductors and epitaxial materials to increase the domain wall velocities are reviewed in the case of current-driven domain wall movement within lateral systems.