The increase of the spin-transfer torque threshold current density in coupled vortex domain walls

We have studied the dependence on the domain wall structure of the spin-transfer torque current density threshold for the onset of wall motion in curved, Gd-doped Ni(80)Fe(20) nanowires with no artificial pinning potentials. For single vortex domain walls, for both 10% and 1% Gd-doping concentrations, the threshold current density is inversely proportional to the wire width and significantly lower compared to the threshold current density measured for transverse domain walls. On the other hand for high Gd concentrations and large wire widths, double vortex domain walls are formed which require an increase in the threshold current density compared to single vortex domain walls at the same wire width. We suggest that this is due to the coupling of the vortex cores, which are of opposite chirality, and hence will be acted on by opposing forces arising through the spin-transfer torque effect.     

Recovery of soft magnetic properties of FeNiSm films by Ta interlayer

The magnetic properties of FeNiSm thin films with different thicknesses, different Ta interlayer thicknesses and different numbers of Ta interlayers were investigated. The single layer FeNiSm shows in-plane uniaxial anisotropy at a thickness below critical value, but shows weak perpendicular anisotropy with a stripe domain structure at thickness above the critical value. Experiments indicate that one or more Ta interlayers inserted into thick FeNiSm films with weak perpendicular anisotropy were effective not only in canceling the perpendicular anisotropy, but also in recovering the in-plane uniaxial anisotropy. Blocking of the columnar growth of FeNi grains by the Ta interlayer is considered to be responsible for this spin reorientation phenomenon. Moreover, the magnetization reversal mechanism in FeNiSm films with uniaxial anisotropy can be ascribed to coherent rotation when the applied field is close to the hard axis and to domain-wall unpinning when the applied field is close to the easy axis. The dynamic magnetic properties of FeNiSm films with uniaxial anisotropy were investigated in the frequency range 0.1-5 GHz. The degradation of the soft magnetic properties of magnetic thin films due to the growth of columnar grains can be avoided by insertion of a Ta interlayer.     

Role of anisotropy on the domain wall properties of ferromagnetic nanotubes

In this paper we investigate the role of magneto-crystalline anisotropy on the domain wall (DW) properties of tubular magnetic nanostructures. Based on a theoretical model and micromagnetic simulations, we show that either cubic or uniaxial magneto-crystalline anisotropies have some influence on the domain wall properties (wall size, propagation velocity and energy barrier) and then on the overall magnetization reversal mechanism. Besides the characterization of the transverse and vortex domain wall sizes for different anisotropies, we predict an anisotropy dependent transition between the occurrence of transverse and vortex domain walls in tubular nanowires. We also discuss the dynamics of the vortex DW propagation gradually increasing the uniaxial anisotropy constant and we found that the average velocity is considerably reduced. Our results show that different anisotropies can be considered in real samples in order to manipulate the domain wall behavior and the magnetization reversal process.     

通道宽度对二维粗糙边界斜面颗粒流的影响

在此之前已经报道了二维斜面颗粒流在通道中的分布规律以及二维斜面粗糙边界附近的颗粒 流量密度（ξ=ρ·ν）分布.本文则主要研究通道宽度W对边界附近颗粒流量密度(ξ=ρ· ν)分布的影响.结果表明，颗粒流量密度随通道宽度的变化（ξ W）存在一临界通道宽度W c.在本实验条件下临界通道宽度Wc=70d.当通道宽度小于临界宽度Wc时 ，通道中距边界20d—30d区间内的相对颗粒流量密度随斜面倾斜角的变化可描述为ξ∝( sinθ)α，α是与通道宽度W有关的参数，其数值在032至085之间. 关键词： 二维颗粒流 颗粒物质 颗粒流量密度     

Static properties of asymmetric vortex-like domain walls in magnetically uniaxial thick films

The structure and energy of asymmetric vortex-like Bloch and Néel walls in a magnetically uniaxial film with an easy magnetization axis lying in the film plane are investigated by numerically minimizing the total energy within the rigorous micromagnetic approach and the two-dimensional model of the magnetization distribution. The calculations are performed over wide ranges of film thicknesses b (up to b = 1 μm) and magnetic parameters of the films. It is established that the asymmetric vortex-like domain walls are the most universal wall structures in the films under consideration. In magnetically uniaxial films, unlike in magnetically multiaxial films, the asymmetric Bloch walls are always stable.     

Nonlinear reconfiguration of vortexlike domain walls in magnetically uniaxial films under the action of an external field normal to the easy magnetic axis

The effect of external magnetic field H normal to the anisotropy axis on the energy and configuration of vortexlike asymmetric magnetic walls in a magnetically uniaxial film with an easy magnetic axis parallel to its surface is studied. The investigation is based on minimizing the energy functional of the film with due regard to exchange energy, magnetic anisotropy energy, magnetostatic energy, and Zeeman energy. The range of H below the anisotropy field is found where the asymmetric Néel wall is stable, unlike the case H = 0, when the asymmetric Bloch wall is stable. It is shown that an asymmetric Bloch wall becomes absolutely unstable and reconfigures into an asymmetric Néel wall at some critical values of H = H _⊥. The dependences of critical field H _⊥ on the film thickness and saturation induction at different values of the anisotropy field are determined: field H _⊥ depends on the thickness nonlinearly and on the saturation induction nonmonotonically.     

Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires

In-plane magnetic anisotropy of 40-μm-long (Ga,Mn)As wires with different widths (0.4, 1.0, and 20 μm) has been investigated between 5 and 75 K by measuring anisotropic magneto-resistance (AMR). The wires show in-plane 〈1 0 0〉 cubic and [−1 1 0] uniaxial anisotropies, and an additional lithography-induced anisotropy along the wire direction in narrow wires with width of 0.4 and 1.0 μm. We derive the temperature dependence of the cubic, uniaxial, and lithography-induced anisotropy constants from the results of AMR, and find that a sizable anisotropy can be provided by lithographic means, which allows us to control and detect the magnetization reversal process by choosing the direction of the external magnetic fields.     

Domain structure of (011) crystalline garnet ferrite plates

The domain structure in (011) crystalline garnet ferrite plates is studied with allowance for induced uniaxial anisotropy and two-constant cubic anisotropy. It is shown that the inclusion of the second constant of cubic anisotropy greatly affects the orientational phase diagram and also the topology of magnetic inhomogeneities in a given magnet. It is found, in particular, that 180°non-Bloch domain walls may appear in a certain range of combined anisotropy constants, causing a continuous change in the wall orientation.     

Domain wall resistance in epitaxial Fe wires

We studied the magnetoresistance behavior of epitaxial Fe wires grown on GaAs(1 1 0) with varying widths at room temperature. Single nanowires show a wire width (w) dependence of the coercive field, which increases with 1/w for decreasing wire widths. This enables the pinning of a single domain wall in the connection area of two wires with different widths. Magnetoresistance measurements of such wire structures clearly reveal resistance contributions arising from a domain wall. The presence of the domain wall is proven by photoemission electron-microscopy with synchrotron radiation. Moreover, micromagnetic simulations are performed to determine the spin orientations, especially within the domain wall. This permits us to calculate the anisotropic magnetoresistance caused by the domain wall. Taking this into account, we determine the intrinsic domain wall resistance, for which we found a positive value of 0.2%, in agreement with theoretical predictions.     

Singularity in high-frequency susceptibility of thin magnetic films with uniaxial anisotropy

A sharp peak of magnetic susceptibility has been observed in the ferromagnetic resonance spectra of uniaxial magnetic films placed in a planar field directed orthogonal to the easy magnetization axis, along which a pumping high-frequency magnetic field has been oriented. The peak width is considerably narrower than the line width of the uniform ferromagnetic resonance, and its position in a field equal to the film anisotropy field does not depend on the pumping frequency. The nature of the peak is associated with a drastic increase in the static transverse susceptibility of the film in the vicinity of the anisotropy field. It is shown phenomenologically that the peak can be observed only for quality samples with small angular and amplitude dispersion of the uniaxial anisotropy.     

Magnetic anisotropy of Fe films on GaAs(113)A substrates

We employ superconducting quantum interference device magnetometry to study the thickness dependence of in-plane and out-of-plane magnetic anisotropic properties of Fe films grown on high-index GaAs(113)A substrates by molecular beam epitaxy. The evolution of the in-plane magnetic anisotropy with film thickness is distinguished into two regions. First, for Fe film thicknesses ≤50 MLs, we observe an in-plane uniaxial magnetic anisotropy with the easy axis along the in-plane 〈332̄〉 axes. Second, for Fe film thicknesses ≥70 MLs, we observe a four-fold magnetic anisotropy with the easy axis along the in-plane 〈031̄〉 axes. The existence of an out-of-plane perpendicular magnetic anisotropy is also detected in ultrathin Fe films. Similar to Fe on GaAs(001), our results provide evidence for the interfacial origin of the in-plane uniaxial and out-of-plane perpendicular magnetic anisotropy. Both the uniaxial and the perpendicular interface anisotropy are found to be independent of the epitaxial orientation and are hence an intrinsic property of the Fe/GaAs interface. PACS 75.70.-i; 75.50.Bb; 81.15.Hi     

小尺寸正方形铁磁薄膜边界效应对磁化翻转过程的影响

用自旋动力学方法系统地研究磁偶极相互作用表现的边界效应对小尺寸正方形铁磁薄膜的磁化翻转过程的影响.在确定的磁偶极相互作用强度下,针对不同的单轴各向异性强度和不同的磁化角(外磁场与易轴间的夹角),具体给出矫顽场与磁化角及单轴各向异性强度之间的依赖关系和-些有代表性的磁滞回线,并给出磁化翻转过程中-些有代表性的微观磁结构.模拟结果表明:磁偶极相互作用表现的边界钉扎作用与单轴各向异性场之间的竞争决定磁滞回线的形状和矫顽场的大小,从而在不同磁化角情况下会导致不同的矫顽场机理.本文提出可有效地描述正方形铁磁性薄膜复杂微观磁畴结构的形成与演变的五磁畴模型.这种五磁畴模型既能直接揭示单轴各向异性正方形铁磁薄膜的几何特性和物理特性,也方便于磁化翻转过程的分析.     

Nonlinear dynamic structure rearrangement of vortexlike domain walls in magnetic films with in-plane anisotropy

The nonlinear dynamic behavior of vortexlike domain walls in magnetic uniaxial films having an in-plane anisotropy was investigated within a rigorous micromagnetic approach in the framework of a two-dimensional magnetization distribution by numerically solving the Landau–Lifshitz equations (with the Gilbert damping parameter) with allowance for all the main interactions, including the dipole–dipole one. The studies were carried out on magnetic soft films with an anisotropy axis lying in their plane in a dc magnetic field parallel to an easy axis and a pulsed magnetic field normal to it. New possibilities for controlling the nonlinear dynamic rearrangement of the internal structure of domain walls and their velocities in fields both above and below the critical field are established. The wall motion in the field above the critical one is nonstationary.     

Magnetic domain configurations in exchange-coupled NiO/Co bilayer films

The magnetic domain configurations of exchange-coupled NiO/Co bilayers were investigated by magnetic force microscopy. These bilayers exhibit a well-defined uniaxial anisotropy resulting from the deposition at oblique incidence of the NiO layer. Two types of magnetic contrast are identified: (i) bipolar contrast due to 180° Néel walls in the parts of the walls which are parallel to the easy axis of magnetization, and (ii) monopolar contrast in the parts of the walls separating domains with meeting head-on magnetizations. These latter domain walls have a zigzag shape which represents a compromise between a decrease in the local density of magnetostatic energy and an increase in the wall length. The effect of the Co thickness of the shape on the domains is also discussed.     

A study of high transverse momentum π0's at ISR energies

We present a study of the transverse momentum spectrum of π⁰'s produced at c.m. angles θ = 90° and 53° in pp collisions at √s = 23.6, 30.8, 45.1, 53.2, and 62.9 GeV. The experiment was performed with a lead-glass detector. The data can be described with the usual parametrization $\text{p}{}_{\mathrm{<mtext>T</mtext>}}{}^{\mathrm{?n}}\text{?;(x}{}_{\mathrm{<mtext>T</mtext>}}\text{, θ)}$, with n = 7.2 ± 0.2. Comparison between the 90° and 53° data further indicates no appreciable dependence on θ, at least for x_T < 0.3. Two-particle inclusive cross sections for π⁰'s produced alongside are also presented. They are observed to have a dependence upon the transverse momentum of the dipion similar to that of single-particle cross sections and with the same value of n. Two-photon decays of η mesons are observed between 3 and 4 GeV/c transverse momentum with a production cross section half of that of π⁰.     

The effect of stripe domain structure on dynamic permeability of thin ferromagnetic films with out-of-plane uniaxial anisotropy

The permeability is calculated for a thin ferromagnetic film with the stripe domain structure and out-of-plane uniaxial magnetic anisotropy. Analytical expressions for the frequency dependence of components of permeability tensor are derived with the use of the Smit–Beljers method, with the thickness of domain walls and the domain wall motion being neglected. The effect of the domain width and the angle between the anisotropy axis and the film plane on the frequency dependence of the permeability is analyzed. General equations relating the static permeability components and the ferromagnetic resonance frequencies are found. The results of the approach are applied to the derivation of the constraint for the microwave permeability of thin ferromagnetic films. The analysis of the constraint as a function of the axis deviation angle, the domain aspect ratio and the damping parameter allows the conditions to be found for maximal microwave permeability. The results obtained may be useful in connection with the problem of developing high-permeable microwave magnetic materials.     

Magnetoresistance anisotropy of a one-dimensional superconducting niobium strip

We investigated confinement effects on the resistive anisotropy of a superconducting niobium strip with a rectangular cross section. When its transverse dimensions are comparable to the superconducting coherence length, the angle dependent magnetoresistances at a fixed temperature can be scaled as R(theta,H) = R(H/Hctheta) where Hctheta =Hc0(cos2theta + gamma(-2)sin2theta)(-1/2) is the angular dependent critical field, gamma is the width to thickness ratio, and Hc0 is the critical field in the thickness direction at theta=0 degrees . The results can be understood in terms of the anisotropic diamagnetic energy for a given field in a one-dimensional superconductor.     

Crossover between thermally assisted and pure quantum tunneling in molecular magnet Mn12-acetate

The crossover between thermally assisted and pure quantum tunneling has been studied in single crystals of high spin (S = 10) uniaxial molecular magnet Mn12 using micro-Hall-effect magnetometry. Magnetic hysteresis and relaxation experiments have been used to investigate the energy levels that determine the magnetization reversal as a function of magnetic field and temperature. These experiments demonstrate that the crossover occurs in a narrow ( approximately 0. 1 K) or broad ( approximately 1 K) temperature interval depending on the magnitude of the field transverse to the anisotropy axis.     

Influence of the film thickness and additional elements (Al,O, and N) on the properties of FeCo film structures

The magnetic properties and domain structure of FeCoAlON thin films with thicknesses varying from 55 to 550 nm have been studied, and conditions favoring preparation of FeCoAlON films with uniaxial anisotropy in the direction normal to the film plane, which is required for designing “perpendicular” super-high-density information recording, have been established. In FeCoAlON films with a thickness up to 300 nm, the domain structure consists of cross-linked domain walls, because strong demagnetizing field suppresses formation of stripe domains. After the film thickness has reached 320 nm, cross-linked domain walls transform into stripe domains, with uniaxial anisotropy in the film plane disappearing, to become replaced by uniaxial anisotropy in the direction normal to the film plane, which can be assigned to magnetoelastic stresses induced by nitrogen atoms filling up interstitial space in the (110) plane. A further increase in the film thickness (up to 550 nm) leads to a rotational anisotropy due to the increase of nitrogen concentration in interstitials and the increase of magnetoelastic stresses.     

Magnetic anisotropy properties of CoZrNb thin films deposited on PET substrate by magnetron sputtering

Soft magnetism and magnetic anisotropy properties of CoZrNb thin films deposited on polyethylene terephthalate (PET) substrate by magnetron sputtering were investigated. As the film thickness increases, the coercivity of films decreases from 7 to 4 Oe. It exhibits an in-plane uniaxial magnetic anisotropy as the thickness of CoZrNb thin films increases. An easy axis is observed in CoZrNb films along the direction transverse to the rolling direction of the polymer web.