共查询到20条相似文献,搜索用时 62 毫秒
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介绍了量子计算机的最新发展状况。对实现量子计算机的各种实验方法作了简介和比较。特别是详细介绍了最近Kane提出的一种方案,并提出了一种新的用扫描隧道显微镜实现基于单原子的量子计算机方案。 相似文献
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建立起一套工作于真空环境下的基于脉冲电压扫描隧道显微镜(STM)的单原子识别预研究装置.该装王主要由脉冲发生器、真空系统和STM系统三部分组成,能够在5×10-5Pa的真空环境下进行快脉冲STM实验.利用此装置,进行了单个快脉冲诱导的石墨表面超大周期结构的脉冲实验以及脉冲偏压不破坏STM针尖和样品表面的阈值实验. 相似文献
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IBM公司的物理学家发明了一种方法可以在单个磁性原子中存贮计算机比特.这个方法是用隧穿扫描显微镜将一个磁性原子精确定位于非磁性材料薄膜的表面,然后在磁性原子和周围膜原子的相互作用下,可将磁性原子的磁矩固定地指向某个特定方向.这个技术可以使计算机磁性存贮器的存贮密度提高一千倍. 相似文献
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扫描隧道显微术最新进展与原子搬迁 总被引:4,自引:0,他引:4
自从扫描隧道显微镜问世以来,已陆续发展了一系列新型扫描探针显微仪器,如原子力显微镜、磁力显微镜、摩擦力显微镜等等,这些显微仪器不仅能以极高分辨率研究样品表面的形貌和物理化学性质,而且最近几年还被成功地用于操纵单个的原子和分子,文章着重介绍了STM在这方面的进展情况。 相似文献
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本文简要综述利用扫描隧道显微镜(STM)进行单原子操纵的物理机制。主要介绍了场增强的扩散、在表面上拖动(puling)推动(pushing)原子、原子在针尖表面间接触和近接触转移、场致蒸发/脱附、隧道电子非弹性射激发和电子迁移的“电子风力”等过程。同时介绍了一些理论处理方法和对一些实验结果的解释。 相似文献
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Rui-Fen Dou Jin-Feng Jia Mao-Jie Xu Ming-Hu Pan Ke He Li-Juan Zhang Qi-Kun Xue 《Physica E: Low-dimensional Systems and Nanostructures》2005,25(4):660-667
Using the annealed vicinal Si(0 0 1) surface with 4° miscut toward the [1 1 0] direction as a substrate, single-domain monatomic In chain arrays have been fabricated. High-resolution STM images reveal that deposited In atoms preferentially form In dimers between two neighboring Si dimer rows along the step edges on the lower terrace. Formation of In dimers removes the surface dangling bonds and saturates the In valency. With increasing coverage, the In dimers develop into straight monatomic In chains along the step running direction. It is found that the ordered narrow terrace and rebonded double-layer (DB) step edge are the keys for the formation of monatomic In chains. 相似文献
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借助高温扫描隧道显微镜和光电子能谱技术,深入研究了SrO/Si(100)表面向Sr/Si(100)再构表面的动态转化过程.Sr/Si(100)再构表面在硅基氧化物外延生长中起重要作用.在该动态转化过程中,样品在500 ℃的退火温度下,表面出现SrO晶化的现象;在550—590 ℃的退火温度下,SrO/Si(100)开始向Sr/Si(100)转化,界面和表面上的氧以气态的SiO溢出,使得表面出现大量凹槽状缺陷.并且在此动态转化过程中表面的电子态表现出金属特性,这是由于表层硅原子发生断键重排,从而在表面出现悬
关键词:
SrO/Si表面
Sr/Si表面
扫描隧道显微镜
去氧过程 相似文献
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STM study of In nanostructures formation on Ge(001) surface at different coverages and temperatures 下载免费PDF全文
Different In/Ge(001) nanostructures have been obtained by annealing the samples at 320℃ with different coverages of In. Annealing a sample with a critical coverage of 2.1 monolayer of In, different In/Ge(001) nanostructures can be obtained at different temperatures. It is found that thermal annealing treatments first make In atoms form elongated Ge{103}-faceted In-clusters, which will grow wider and longer with increasing temperature, and finally cover the surface completely. 相似文献
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Nucleation and formation of silver islands on the Si(100)2 × 1 surface was for the first time studied by scanning tunneling
microscopy directly during deposition. Crucial role of C-type defects on growth has been observed. Rapidly diffusing Ag atoms
nucleate on these defects and during island evolution the defects represent stable terminations of Ag atomic chains.
Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005. 相似文献
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Au island nucleation and growth on a Si(1 1 1) 7 × 7 vicinal surface was studied by means of scanning tunneling microscopy. The surface was prepared to have a regular array of step bunches. Growth temperature and Au coverage were varied in the 255-430 °C substrate temperature range and from 1 to 7 monolayers, respectively. Two kinds of islands are observed on the surface: Au-Si reconstructed islands on the terraces and three-dimensional (3D) islands along the step bunches. Focusing on the latter, the dependence of island density, size and position on substrate temperature and on Au coverage is investigated. At 340 °C and above, hemispherical 3D islands nucleate systematically on the step edges. 相似文献
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稀土金属元素的硅化物在n型硅衬底上具有高电导率和低肖特基势垒的特点,在大规模集成的微电子器件领域具有很好的应用价值.文章系统介绍了在Si(001)表面自组装生长的稀土金属硅化物纳米结构的研究进展,较全面地讨论了退火温度、退火时间以及稀土金属表面覆盖度等生长条件对纳米结构生长的影响作用,并在此基础上分析了纳米线、纳米岛的晶化结构,衬底对纳米结构生长的影响,以及纳米结构的演化过程.搞清楚这些内在的生长机理,有助于人们今后实现可严格控制稀土金属硅化物纳米结构的形貌尺寸和分布的自组装生长.此外,文章还介绍了目前人们对稀土金属硅化物纳米线电学性质的研究进展. 相似文献