Optical characteristics of an epitaxial Fe3Si/Si(111) iron silicide film

The dispersion of the relative permittivity ? of a 27-nm-thick epitaxial Fe₃Si iron silicide film has been measured within the E = 1.16–4.96 eV energy range using the spectroscopic ellipsometry technique. The experimental data are compared to the relative permittivity calculated in the framework of the density functional theory using the GGA-PBE approximation. For Fe₃Si, the electronic structure and the electronic density of states (DOS) are calculated. The analysis of the frequencies corresponding to the transitions between the DOS peaks demonstrates qualitative agreement with the measured absorption peaks. The analysis of the single wavelength laser ellipsometry data obtained in the course of the film growth demonstrates that a continuous layer of Fe₃Si iron silicide film is formed if the film thickness achieves 5 nm.     

Magneto-optical phenomena in MnAs/CaF2/Si(111) epitaxial films in a transverse magnetic field

Field and angular dependences of the rotation of the plane of polarization in a transverse magnetic field H⊥k under normal reflection of light (λ=633 nm) have been studied in MnAs ferromagnetic epitaxial films grown by MBE on CaF₂/Si(111) substrates. The angle of rotation of the plane of polarization a is shown to be determined by contributions even and odd in the magnetization M. The odd contribution is associated with the deviation of the easy plane of magnetic anisotropy from the film plane, which originates from misorientation of the Si surface from the (111) plane, or from a presence of small regions of ( )-oriented MnAs. The even contribution is due to the optical anisotropy of films connected with quadratic-in-M terms in the dielectric permittivity tensor ɛ _ij of manganese arsenide. A method based on measuring the angular dependences of a in a rotating magnetic field is proposed to separate these contributions. Fiz. Tverd. Tela (St. Petersburg) 41, 110–115 (January 1999)     

Influence of the surface morphology of single-crystal Si(111) substrates on the magnetic properties of epitaxial cobalt films

The epitaxial films Co(111)/Cu(111)-R30°/Si(111) have been grown on the atomically smooth and vicinal Si(111) surfaces. The roughnesses of the substrate and the cobalt film have been determined using scanning tunneling microscopy. The dependence of the coercive force has been investigated as a function of the azimuthal angle. The dependence of the magnetic anisotropy and the coercive force on the surface roughness has been determined. It has been shown that, in the epitaxial cobalt films deposited on the atomically smooth silicon surfaces, crystalline anisotropy of the 〈110〉 type leads to the isotropy of the magnetization reversal processes. The step-induced uniaxial anisotropy has been observed upon deposition on the vicinal surfaces. The films deposited on the atomically smooth surfaces have a complex domain structure.     

Growth and structure of epitaxial diamond films grown on Si(111) single crystals

Experiments on growing single-crystal diamond films on silicon crystals with (111) surface orientation have been performed. Results attesting to the possibility of obtaining thin heteroepitaxial films are presented. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 5, 414–418 (10 March 1997)     

Pulsed-laser-deposited epitaxial aluminum nitride films on (111) Si for surface acoustic-wave applications

Epitaxial (001) aluminum nitride (AlN) thin films on (111) Si substrates are prepared using pulsed-laser deposition. The epitaxial structure of the as-prepared thin films is characterized by checking the X-ray-diffraction θ-2 θ scan and pole-figure, using scanning electron microscopy, infrared radiation (IR) spectroscopy and Raman spectroscopy. The surface acoustic-wave resonance at 345 MHz for a 1.5 μm thick AlN film on a (111) Si substrate is observed using an inter-digital electrode. Received: 18 September 2001 / Accepted: 29 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-25/359-5535, E-mail: liujm@nju.edu.cn     

Temperature dependence of multi-jump magnetic switching process in epitaxial Fe/MgO(001) films

Temperature dependence of magnetic switching processes with multiple jumps in Fe/MgO(001) films is investigated by magnetoresistance measurements. When the temperature decreases from 300K to 80K, the measured three-jump hysteresis loops turn into two-jump loops. The temperature dependence of the fourfold in-plane magnetic anisotropy constant K1, domain wall pinning energy, and an additional uniaxial magnetic anisotropy constant KUare responsible for this transformation. The strengths of K1 and domain wall pinning energy increase with decreasing temperature, but KU remains unchanged. Moreover, magnetization reversal mechanisms, with either two successive or two separate 90°domain wall propagation, are introduced to explain the multi-jump magnetic switching process in epitaxial Fe/Mg O(001) films at different temperatures.     

Polarized neutron reflectometry of the influence of Fe/Si,Fe/FeSi2 and Au/Fe interfaces on the magnetic properties of epitaxial Fe films

The magnetic and structural properties of epitaxial Fe films grown on Si(1 1 1) are investigated by polarized neutron reflectometry (PNR) at room temperature. The influence of different types of interfaces, Fe/Si, Fe/FeSi₂ and Au/Fe on the magnetic properties of Fe films deposited by molecular beam epitaxy onto Si(1 1 1) are characterized. We observe a drastic reduction of the magnetic moment in the entire Fe film deposited directly on the silicon substrate essentially due to strong Si interdiffusion throughout the whole Fe layer thickness. The use of a silicide FeSi₂ template layer stops the interdiffusion and the value of the magnetic moment of the deposited Fe layer is close to its bulk value. We also evidence the asymmetric nature of the interfaces, Si/Fe and Fe/Si interfaces are magnetically very different. Finally, we show that the use of Au leads to an enhancement of the magnetization at the interface.     

On the characteristics of AlGaN films grown on (111) and (001) Si substrates

High Al-content Al_xGa_1−xN films were deposited on (001) and (111) Si substrates at 1000 °C using high temperature AlN buffer layers. Experimental results show that Al_xGa_1−xN films grown on (111) Si substrates exhibit better crystalline quality than that in the films deposited on (001) Si substrates. Cracks were found in the high Al-content Al_xGa_1−xN/(111) Si samples but they were not observed in the Al_xGa_1−xN films grown on (001) Si substrates having the same film thicknesses and Al compositions. Based upon the results of X-ray diffraction (XRD) and transmission electron microscopy (TEM), it appears that mono-crystalline Al_xGa_1−xN films were achieved on (111) Si substrates while columnar structure was observed in the Al_xGa_1−xN/(001) Si samples. According to the depth profiles of Al_xGa_1−xN/Si samples using secondary ion mass spectroscopic (SIMS) analyses, enhanced Al inter-diffusion in the Al_xGa_1−xN/(001) Si samples was identified. Room temperature (RT) photoluminescence (PL) measurements of the Al_xGa_1−xN (x≦0.10)/(111) Si samples exhibit strong near band edge luminescence. The PL emission linewidth was found to decrease with the decrement of Al-content.