Supramolecular organization of meso-substituted derivatives of tetraphenylporphine in thin films

Films of meso-substituted derivatives of tetraphenylporphine substituted in the paraor ortho-positions of the phenyl rings with alkoxy groups (-OC₄H₉ or -OC₁₆H₃₃) and films of their metal complexes are prepared using the Langmuir-Schaefer (LS) method. The effect of the molecular structure on the supramolecular organization of thin films is determined. The films are obtained by transferring layers of the compounds from the surface of the water onto silicon substrates using the Langmuir-Schaefer technique. The structures of the one-component LS films of the investigated compounds are studied by the small-angle X-ray scattering method, and also the lattice periodicities are calculated. The supramolecular organization of the meso-substituted tetraphenylporphine derivatives is modeled and refined by means of the X-ray diffraction method. When Ni or Cu serve as chelating metal, it is found that the macrocycle-macrocycle interaction is so large that it leads to violation of the molecular linearity, i.e., the lateral substituents are folded toward the macrocycle, reducing the area occupied by the structural units.     

A new chemical bath deposition method for fabricating ZnS,Zn(OH)<Subscript>2</Subscript>, and ZnO thin films,and the optical and structural characterization of these materials

ZnS thin films were deposited on glass and polymer substrates using a reaction between thiourea and a stable zinc complex, Zn(en)₃SO₄ (en: ethylenediamine) or Zn(trien)(ClO₄)₂ (trien: triethylenetetraamine), in alkaline media. In a weak alkaline solution, Zn(OH)₂ films were formed. The deposition reactions were controlled by the supply of sulfide ions from thiourea at a suitable rate in alkaline media and by the dissociation of free-metal ions from the metal complex used, the stability of which defined the free Zn²⁺ concentration throughout the reaction. The ZnS films showed emission peaks at ca. 450 and 485 nm, and the transmittance decreased with decreasing wavelength of the incident light in the visible region of the spectrum. ZnO thin films were deposited by decomposition of Zn(en)₃SO₄ in the presence of Cu(en)₂(ClO₄)₂ and thiourea; the copper(II) complex catalyzes this reaction. The ZnO films exhibited an emission peak at ca. 420 nm, and the absorbance was constant in the visible region of the spectrum. The scanning electron microscope images showed the formation of a fairly uniform surface with fine crystalline particles. PACS 81.15.-z; 68.55.-a; 81.05.Dz     

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

In this paper AgInS₂ and Zn(O,OH)S thin films were synthesized and characterized. AgInS₂ layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS₂ thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS₂ films presented p-type conductivity, a high absorption coefficient (greater than 10⁴ cm⁻¹) and energy band-gap E_g of about 1.95 eV, Zn(O,OH),S thin films presented E_g of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS₂ layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.     

Photoluminescence behavior of pulsed laser deposited ZnGa<Subscript>2</Subscript>O<Subscript>4</Subscript> thin-film phosphors grown on various substrates

ZnGa₂O₄ thin-film phosphors have been grown on Si(100), Al₂O₃(0001) and MgO(100) substrates using pulsed laser deposition. The structural characterization was carried out on a series of ZnGa₂O₄ films grown on various substrates under various substrate temperatures and oxygen pressures. The films grown on these substrates not only have different crystallinity and surface morphology, but also different Zn/Ga composition ratio. The crystallinity and photoluminescence (PL) of the ZnGa₂O₄ films are highly dependent on the deposition conditions, in particular the stoichiometry ratio of Zn/Ga and the kind of substrate. The variation of Zn/Ga in the films also depends on not only the oxygen pressure but also the substrate temperature during deposition. The PL properties of pulsed laser deposited ZnGa₂O₄ thin films have indicated that Al₂O₃(0001) and MgO(100) are promising substrates for the growth of high-quality ZnGa₂O₄ thin films and that the luminescence brightness depends on the substrate. The luminescence spectra show a broad band extending from 350 to 600 nm and peaking at 460 nm. Received: 11 July 2002 / Accepted: 31 July 2002 / Published online: 28 October 2002 RID="*" ID="*"Corresponding author. Fax: +82-51-6206356, E-mail: jhjeong@pknu.ac.kr     

Influence of spin-orbit coupling on vibronic spectra of metalocomplexes porphin: Manifestation of out-of-plane vibrations

In fine-structure phosphorescence spectra of metallocomplexes of porphin with ions of the Pd(II) and Pt(II) and their meso-deuterated derivatives additional lines have been detected which have no analogs in fluorescence and resonance Raman spectra of metalloporphyrins and in phosphorescence spectra of metallocomplexes of porphin with light ions of the Mg(II) and Zn(II). For Zn-porphin, quantum-chemical calculations of frequencies and forms of in-plane and out-of-plane vibrations have been performed. Based on experimental data and calculation results it has been found, that in vibronic phosphorescence spectra of metallocomplexes of porphin, out-of-plane gerade modes of the E _g symmetry (D _4h symmetry group) are manifested. The activity of out-of-plane vibrations increases with enhancing spin-orbital coupling upon changing to heavier chelated metal ions. Vibronic transitions with participation of out-of-plane gerade E _g vibrations manifest in the T ₁ → S ₀ transition through the vibronic intensity borrowing from the triplet-triplet ³ E _u -³ E _g transition.     

The characterization of Cr secondary oxide phases in ZnO films studied by X-ray spectroscopy and photoemission spectroscopy

X-ray absorption near-edge structure (XANES), X-ray emission spectroscopy (XES), and X-ray photoemission spectroscopy (XPS) were used to characterize the Cr secondary oxide phases in ZnO films that had been prepared using a co-sputtering method. Analysis of the Cr L_3,2-edge XANES spectra reveals that the intensity of white-line features decreases subtly as the sputtering power increases, indicating that the occupation of Cr 3d orbitals increases with Cr concentration in (Zn, Cr)O films. The O K-edge spectra show that the intensity of XANES features of (Zn, Cr)O films is lower than those of ZnO film, suggesting enhanced occupation of O 2p-derived states through O 2p-Cr 3d hybridization. The XES and XPS spectra indicate that the line shapes in the valence band of (Zn, Cr)O films are quite different from those of ZnO and that the Cr₂O₃ phase dominates the spinel structure of (Zn, Cr)O films increasingly as the Cr sputtering power is increased. Over all results suggest that the non-ferromagnetic behavior of (Zn, Cr)O films can be attributed to the dominant presence of Cr₂O₃, whereas the bulk comprise phase segregations of Cr₂O₃ and/or ZnCr₂O₄, which results them the most stable TM-doped ZnO material against etching.     

Structural,electrical and optical properties of Cd1−xZnxO thin films and alloying effects on Kβ/Kα intensity ratios

Cd_1?xZn_xO thin films were prepared by spray pyrolysis in air atmosphere on a glass substrate at 250 °C. The Zn content in Cd_1?xZn_xO films was varied from x = 0 to 0.60. Structural, electrical and optical properties of Cd_1?xZn_xO films were investigated by x‐ray diffraction, electrical resistivity and optical transmittance spectra, respectively. As the Zn content in Cd_1?xZn_xO thin films increased, the preferred orientation of the films did not change, only the peak intensity of the planes decreased. In addition to the peaks of CdO, peaks of ZnO were observed in the film with x = 0.6. The resistivity of Cd_1?xZn_xO thin films increased with increasing Zn content. Transmittance spectra studies of films were carried out in the 190‐1100 nm wavelength range and the results showed that the bandgap energy range varied from 2.42 to 3.25 eV. In addition, alloying effect on the Kβ/Kα intensity ratio in Cd_1?xZn_xO semiconductor thin films was studied. It was found that the Kβ/Kα intensity ratio is changed by alloying effects in Cd_1?xZn_xO semiconductor thin films for different composition of x. The results were compared with the theoretical values. Copyright © 2006 John Wiley & Sons, Ltd.     

Reactivities of mixed organozinc and mixed organocopper reagents. Part 13 Kinetic study for phosphine‐catalyzed acylation of alkylarylzincs and effect of residual group on the transfer rate of alkyl group

Kinetics of reactions of di‐n‐butylzinc, n‐Bu₂Zn, and mixed n‐butyl(substituted phenyl)zinc reagents and n‐Bu(functional group (FG)?C₆H₄)Zn with benzoyl chloride in the presence of tri‐n‐butylphosphine have been investigated. Reaction rates of transferable n‐butyl group have been determined in tetrahydrofuran at 0 °C to compare the transfer rate of n‐butyl group in homo and mixed diorganozincs. Rate law is consistent with a third‐order reaction, which is first order in diorganozinc, benzoyl chloride, and n‐Bu₃P, and a mechanism was proposed. The lower reaction rate of n‐BuPhZn than that of n‐Bu₂Zn and negative reaction constant in Hammett plot are in accordance with the carbanionic charge of transferable n‐butyl group in the acylation reaction. These findings support the hypothesis that the reaction rate of transferable group, R_T, changes depending upon the residual group, R_R, in R_RR_TZn reagents. Copyright © 2016 John Wiley & Sons, Ltd.     

Epitaxial growth of InN on nearly lattice-matched (Mn,Zn)Fe2O4

We have grown InN films on nearly lattice-matched (Mn,Zn)Fe₂O₄ (111) substrates at low temperatures by pulsed laser deposition (PLD) and investigated their structural properties. InN films grown at substrate temperatures above 400 °C show poor crystallinity, and their in-plane epitaxial relationship is [10-10]InN//[11-2](Mn,Zn)Fe₂O₄, which means that their lattice mismatch is quite large (11%). By contrast, high quality InN films with flat surfaces can be grown at growth temperatures lower than 150 °C with the ideal in-plane epitaxial relationship of [11-20]InN//[11-2](Mn,Zn)Fe₂O₄, which produces lattice mismatches of as low as 2.0%. X-ray reflectivity measurements have revealed that the thickness of the interfacial layer between the InN and the substrates is reduced from 14 to 8.4 nm when the growth temperature is decreased from 400 °C to room temperature. This suppression of the interface reactions by reducing the growth temperature is probably responsible for the improvement in crystalline quality. These results indicate that the use of (Mn,Zn)Fe₂O₄ (111) substrates at low growth temperatures allows us to achieve nearly lattice matched epitaxial growth of InN.     

(Co, Zn)O compound obtained from ZnTe vapor deposition on Co/Si substrates

(Co, Zn)O compound has been obtained by a non-expensive synthesis route. ZnTe thin films were obtained by isothermal close space sublimation on the Co thin layer previously sputtered on silicon substrates. After the annealing process in humid ambient cobalt atoms diffusion and Zn oxidation were obtained besides partial Te evaporation. The detailed characterization of the samples by using XRD, RBS, AFM, XPS, VSM and MFM techniques point to the formation of room temperature ferromagnetic Co _x Zn_(1−x)O phase (x<0.15). This ferromagnetic behavior is mainly attributed to Co atoms substituting Zn atoms in the ZnO network.     

Sb complexes and Zn interstitials in Sb-implanted ZnO epitaxial films

In the present work, post-annealing is adopted to investigate the formation and the correlation of Sb complexes and Zn interstitials in Sb-ion implanted ZnO films, by using Raman scattering technique and electrical characterizations. The damage of Zn sublattice, produced by ion bombardment process is discerned from the unrecovered E2 (L) peak in annealed high Sb+ dose implanted samples. It is suggested that the Zn sublattice may be strongly affected by the introduction of Sb dopant because of the formation of SbZn-2VZn complex acceptor. The appearance of a new peak at 510 cm 1 in the annealed high dose Sb+ implanted samples is speculated to result from (Zn interstitials-O interstitials) Zni-Oi complex, which is in a good accordance with the electrical measurement. The p-type ZnO is difficult to obtain from the Sb+ implantation, however, which can be realized by in-situ Sb doping with proper growth conditions instead.     

Zn掺杂β-Ga2O3薄膜的制备和特性研究

β-Ga₂O₃是一种宽带隙半导体材料,能带宽度E_g≈5.0eV,在光学和光电子学领域有广泛的应用。用射频磁控溅射方法在Si衬底和远紫外光学石英玻璃衬底制备了本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜,用紫外 可见分光光度计、X射线衍射仪、荧光分光光度计对本征β-Ga₂O₃薄膜及Zn掺杂β-Ga₂O₃薄膜的光学透过、光学吸收、结构和光致发光进行了测量,研究了Zn掺杂和热退火对薄膜结构和光学性质的影响。退火后的β-Ga₂O₃薄膜为多晶结构,与本征β-Ga₂O₃薄膜相比,Zn掺杂β-Ga₂O₃薄膜的β-Ga₂O₃(111)衍射峰强度变小,结晶性变差,衍射峰位从35.69°减小至35.66°。退火后的Zn掺杂β-Ga₂O₃薄膜的光学带隙变窄,光学透过降低,光学吸收增强,出现了近边吸收,薄膜的紫外、蓝光及绿光发射增强。表明退火后Zn掺杂β-Ga₂O₃薄膜中的Zn原子被激活充当受主。     

Growth of InN films on spinel substrates by pulsed laser deposition

We have grown InN films on MgAl₂O₄(111) substrates with atomically flat surfaces using pulsed laser deposition (PLD) and compared their structural properties with those grown on (Mn,Zn)Fe₂O₄(111) substrates. It has been revealed that InN(0001) films grow on MgAl₂O₄(111) with an in‐plane epitaxial relationship of InN[1 00] // MgAl₂O₄[1 0], achieving a lattice mismatch minimum. The InN films exhibited a clear sixfold rotational symmetry, without 30° rotational domains and with a full width at half maximum value of the InN 0002 rocking curve being 17.5 arcmin. Comparison between InN films grown on MgAl₂O₄ and those on (Mn,Zn)Fe₂O₄ led us to conclude that suppression of the interfacial reactions between the InN films and the substrate is inherently important to obtain high quality InN on substrates with a spinel structure. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Zn1-xCoxO稀磁半导体薄膜的结构及其磁性研究

利用X射线吸收精细结构、X射线衍射和磁性测量等技术研究脉冲激光气相沉积法制备的Zn_1-xCo_xO (x＝0.01,0.02)稀磁半导体薄膜的结构和磁性.磁性测量结果表明Zn₁-xCo_xO样品都具有室温铁磁性.X射线衍射结果显示其薄膜样品具有结晶良好的纤锌矿结构.荧光X射线吸收精细结构测试结果表明,脉冲激光气相沉积法制备的样品中的Co离子全部进入ZnO晶格中替代了部分Zn的格点位置,生成单一相的Zn_1-xCo_xO 稀磁半导体.通过对X射线吸收近边结构谱的分析,确定Zn_1-xCo_xO薄膜中存在O空位,表明Co离子与O空位的相互作用是诱导Zn_1-xCo_xO产生室温铁磁性的主要原因. 关键词： 1-xCo_xO稀磁半导体')" href="#">Zn_1-xCo_xO稀磁半导体 X射线吸收精细结构谱 脉冲激光气相沉积法     

Transitions of microstructure and photoluminescence properties of the Ge/ZnO multilayer films in certain annealing temperature region

The Ge/ZnO multilayer films have been prepared by rf magnetron sputtering. The effects of annealing on the microstructure and photoluminescence properties of the multilayers have been investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier-transform infrared (FTIR) spectrometry and photoluminescence (PL) spectrometry. The investigation of structural properties indicates that Zn₂GeO₄ has been formed with (2 2 0) texture and Zn deficiency from Ge/ZnO multilayer films in the process of annealing. However, lower Zn/Ge ratio can be improved by annealing. The annealed multilayers show three main emission bands at 532, 700, and 761 nm, which originate from the transition between oxygen vacancy () and Zn vacancies (V_Zn), the radiative recombination of quantum-confined excitons (QCE) in Ge nanocrystals, and the optical transition in the GeO color centers, respectively. Finally, the fabrication of thin film Zn₂GeO₄ from Ge/ZnO multilayer films by annealing at low temperature provides another approach to prepare the green-emitting oxide phosphor film:Zn₂GeO₄:Mn.     

Ultrasonic-assisted ultra-rapid synthesis of monodisperse meso-SiO2@Fe3O4 microspheres with enhanced mesoporous structure

A core–shell-type of meso-SiO₂@Fe₃O₄ microsphere was synthesized via an ultrasonic-assisted surfactant-templating process using solvothermal synthesized Fe₃O₄ as core, tetraethoxysilane (TEOS) as silica source, and cetyltrimethyl ammonium bromide (CTAB) as templates. The samples were characterized by FT-IR, XRD, TEM, N₂ adsorption–desorption technology, and vibrating sample magnetometer (VSM). The results show that as-prepared meso-SiO₂@Fe₃O₄(E) and meso-SiO₂@Fe₃O₄(C) microspheres, treated by acetone extraction and high temperature calcination, respectively, still maintain uniform core–shell structure with desirable mesoporous silica shell. Therein, the meso-SiO₂@Fe₃O₄(E) microspheres possess a distinct pore size distribution in 1.8–3.0 nm with large specific surface area (468.6 m²/g) and pore volume (0.35 cm³/g). Noteworthily, the coating period of this ultrasonic-assisted method (40 min) is much shorter than that of the conventional method (12–24 h). The morphology of microspheres and the mesoporous structure of silica shell are significantly influenced by initial concentration of CTAB (C_CTAB), ultrasonic irradiation power (P) and ultrasonic irradiation time (t). The acceleration roles of ultrasonic irradiation take effect during the whole coating process of mesoporous silica shell, including hydrolysis-condensation process of TEOS, co-assembly of hydrolyzed precursors and CTAB, and deposition of silica oligomers. In addition, the use of ultrasonic irradiation is favorable for improving the homogeneity of silica shell and the monodispersity of meso-SiO₂@Fe₃O₄ microspheres.     

Insight into magnetic properties in zinc ferrite thin films by tuning oxygen content

In this investigation ZnFe₂O₄ thin films were fabricated by RF magnetron sputtering and the magnetic behavior was examined under the influence of the growth conditions in three types of atmospheres, using near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) and vibrating sample magnetometry (VSM). XPS revealed that films under an Ar/O₂ ratio 1:2 and 2:1 have Fe/Zn atomic ratios similar to the Fe/Zn stoichiometric composition; while the films deposited in pure Ar atmosphere, showed a formation of Fe ions (Fe⁰) reduced by Ar ion sputtering. VSM revealed an enhancing of the saturation magnetization for the ZFO in thin films unlike the samples in bulk, suggesting that Fe ions migrate to A sites and the interaction J_AB dominates the magnetic properties instead of J_BB interaction.     

Cu2ZnSnSe4 films by selenization of Sn–Zn–Cu sequential films

This paper deals with the formation of Cu₂ZnSnSe₄ (CZTS) in the process of selenization of metal precursor layers in elemental selenium vapour. Metallic precursors were sequentially evaported from Sn, Zn and Cu sources. Precursor Sn–Zn–Cu films have a “mesa-like” structure and consist mainly of Cu₅Zn₈ and Cu₆Sn₅ phases. It was confirmed that the formation of different binary copper selenides is the dominating process of selenization in elemental Se vapour at temperatures up to 300 °C. The formation of kesterite CZTS films begins at 300 °C and dominates at higher temperatures, always resulting in multiphase films that consist of high-quality Cu₂ZnSnSe₄ crystals and of a separate phase of ZnSe.     

Atomic layer deposition and characterization of Ga-doped ZnO thin films

Low-resistivity n-type ZnO thin films were grown by atomic layer deposition (ALD) using diethylzinc (DEZ) and H₂O as Zn and O precursors. ZnO thin films were grown on c-plane sapphire (c- Al₂O₃) substrates at 300 C. For undoped ZnO thin films, it was found that the intensity of ZnO () reflection peak increased and the electron concentration increased from 6.8×10¹⁸ to 1.1×10²⁰ cm⁻³ with the increase of DEZ flow rate, which indicates the increase of O vacancies () and/or Zn interstitials (Zn_i). Ga-doping was performed under Zn-rich growth conditions using triethylgallium (TEG) as Ga precursor. The resistivity of 8.0×10⁻⁴ Ω cm was achieved at the TEG flow rate of 0.24 μmol/min.     

Tailoring thermomagnetic properties in Pb(Zr0.52Ti0.48)O3–Ni(1−x)ZnxFe2O4

The effect of Zn content on magnetocaloric effect (MCE) in Pb(Zr_0.52Ti_0.48)O₃–Ni_(1?x)Zn_xFe₂O₄ (PZT-NZF) with x?=?0, 0.20, 0.30, 0.40 and 0.50 were investigated by phenomenological model. The results show that MCE for PZT-NZF is enhanced with low Zn content. However, for high Zn content samples, MCE for PZT-NZF decreases with Zn. In addition, MCE in PZT-NZF is tunable with Zn content and extends in highly temperature range. It is recommended that that MCE in PZT-NZF is beneficial for magnetic refrigeration for in high temperature.