Devitrification characteristics of GexSe1−x glasses

Amorphous Ge_xSe_1?x compounds have been prepared and carefully characterized in the range 0 ? x ? 0.43 (density and micro-hardness measurements and DTA experiments). By heating samples from the amorphous phase, the crystallization process has been investigated for 0.15 ? x ? 0.30. An immiscibility gap in the vitreous region is determined by optical microscopy, from phase-separation observations; moreover, a new metastable crystalline phase appearing as an intermediate step between phase separation and stable GeSe₂ is described.     

X-ray investigation of the crystallization of chalcogenide glasses of the type (As2Se3)1−x:(Tl2Se)x

Amorphous and crystalline states of As₂Se₃, (As₂Se₃)₃ : Tl₂Se and As₂Se₃ : Tl₂Se have been studied using X-ray diffraction techniques. Structural changes arise during the process of annealing in the temperature range between their softening and melting points are reported and their rates investigated. The crystallization temperatures were found to be 105 ± 5 °C, 135 ± 5 °C and 180 ± 5 °C respectively. The unit cell parameters are identified for each of the three resulting crystalline phases, that for As₂Se₃ : Tl₂Se being orthorhombic while the other two are monoclinic.     

On the structure of amorphous GexTe1−x systems

Calculations have been made for the quadrupole splitting of a $\text{3}\text{2}$ spin state of Te¹²⁵ in an amorphous Ge_xTe_1?x system. The results favour the existence of a threefold coordinated black phosphorus structure with an excess of TeTe chains for x-values between o and 0.5; beyond 0.5, threefold coordinated GeTe and an excess of amorphous Ge coexist.     

Nanostructured crystals of Sr1?xRxF2+x fluorite phases and their ordering: 6. Microindentation analysis of crystals

Hardness, crack resistance, brittleness, and effective fracture energy have been studied for crystals of 24 fluorite phases Sr_{1 − x} R _x F_{2 + x} (R are 14 rare earth elements (REEs); 0 < x ≤ 0.5) and SrF2 grown by the Bridgman method from a melt. These characteristics change nonlinearly with an increase in the REE content for Sr_{1 − x} R _x F_{2 + x} (0 < x ≤ 0.5) with R = La, Nd, Sm, Gd, and Lu; it is maximum in the range x < 0.1 for all REEs. The changes in a number of REEs have been traced for an isoconcentration series of Sr_0.90 R _0.10F_2.10 crystals (R = La, Nd, Sm, Gd, Ho, Er-Lu, or Y) and crystals (similar in composition) with R = Tb and Dy. The hardness of Sr_{1 − x} R _x F_{2 + x} crystals is higher by a factor of ∼2–3 than that of SrF2. The effect of decrease in microstresses in SrF₂ crystals is confirmed by the isomorphic introduction of R ³⁺ ions into this crystalline matrix.     

Effect of melt treatment on the microstructure and magnetic properties of Nd2Fe14B/α-Fe nanocomposites

Melt-spun Nd_9.5Fe₈₁Zr₃B_6.5 ribbons were prepared under different quenching temperature. The effect of melt treatment on the microstructure and magnetic properties of Nd₂Fe₁₄B/α-Fe nanocomposites was studied by X-ray diffraction, scanning electron microscopy (SEM), differential scanning calorimeter, transmission electron microscopy observations, and magnetization measurements. It was found that melt spinning at different quenching temperature caused the as-quenched ribbons to have distinctive structure. Depending on the quenching temperature, nanocrystalline structure, partially amorphous structure containing nanophases or entirely amorphous structure could be obtained. Moreover, with increasing initial quenching temperature, the microstructure of optimally heat treated ribbons becomes coarser and more irregular, and the magnetic properties of them deteriorated. It is believed that the alteration of melt characteristics which are highly sensitive to the melt temperature may be the cause for the change of glass forming ability, the microstructure and magnetic properties of the ribbons.     

Neutron diffraction investigation of the evolution of the crystal structure of oxygen-conducting solid solutions (Yb1 ? x Ca x )2Ti2O7 ( x = 0, 0.05, 0.10)

The crystal structure of pyrochlore-like solid solutions (Yb_{1 − x} Ca _x )₂Ti₂O₇ (x = 0, 0.05, 0.10) synthesized by high-temperature annealing of mechanically activated initial oxides at temperatures of 1300–1500°C is studied using neutron diffraction. It is found that the Ca²⁺ cations are located in the ytterbium sublattice, which apparently favors the splitting of one of the oxygen sublattices [O(2) (48f)] of the pyrochlore structure: the decrease in the occupancy of this sublattice is accompanied by the formation of a new sublattice O(3) (8b), whereas the other oxygen sublattice O(1) (8a) remains unchanged. This rearrangement of the anions in the oxygen subsystem due to the incorporation of an alkaline-earth cation explains the high ionic conductance (∼0.2 S/cm at 1000°C) for (Yb_0.9Ca_0.1)₂Ti₂O₇ ∼ 0.2, which is the maximum value observed to date for pyrochlores of the A ₂ B ₂O₇ type, where A = Ln and B is a Subgroup IVA element of the periodic system. The bulk and grain-boundary components of the conductivity of (Yb_0.95Ca_0.05)₂Ti₂O₇ synthesized at temperatures of 1300, 1400, and 1500°C are studied using impedance spectroscopy. It is found that the (Yb_0.95Ca_0.05)₂Ti₂O₇ sample synthesized at 1500°C has the highest total conductivity due to the increased grain-boundary component. The bulk component of the ionic conductivity of (Yb_0.95Ca_0.05)₂Ti₂O₇ is hardly affected by the synthesis temperature and depends mainly on the degree of heterovalent substitution. Original Russian Text ? A.V. Shlyakhtina, A.E. Sokolov, V.A. Ul’yanov, V.A. Trunov, M.V. Boguslavskiĭ, A.V. Levchenko, L.G. Shcherbakova, 2009, published in Kristallografiya, 2009, Vol. 54, No. 1, pp. 31–36.     

Brillouin scattering measurements of attenuation and velocity of hypersounds in SiO2B2O3 glasses

Measurements of hypersound wave velocity and attenuation (20–30 GHz) were made at room temperature by Brillouin scattering in SiO₂O₂O₃ glasses. The attenuation shows a maximum with composition. An explanation of this maximum is given in relation to the glass structure. It is thought that this maximum may be due to a coupling effect of hypersounds with structural relaxational process involving SiSi and SiOB bonds.     

Study of the mechanical properties of two organic–inorganic hybrid systems: GPTMS/colloidal silica and GPTMS/TEOS

This work investigates the mechanical properties of different scratch resistant coatings, namely, a mixture of 3-glycidoxypropyltrimethoxysilane (GPTMS) with either colloidal silica particles or tetraethoxysilane (TEOS). Coatings were prepared by the hydrolysis and the condensation of the precursor's alkoxide (sol–gel process) with thermally catalyzed polymerization of epoxy ring of GPTMS. Dip deposition techniques were used on silicon substrate.The nanoindentation technique was used to analyze the force required to indent the coating with a diamond tip. At low forces, this technique, based on indentation depth, predicts the hardness and the elastic modulus of the coating, while at higher forces, cracks appear. Another analysis based on geometric approach, namely, the crack length, allows the determination of both coating and interface toughness.     

EPR study of crystalline and vitreous forms of the Li2OAl2O3SiO2 system

The epr spectra of V⁴⁺ and radiation centres have been studied in β-eucryptite (LiAlSiO₄), β-, γ-spodumene (LiAlSi₂O₆) and in glasses prepared by the fusion of the single crystals. It is shown that the electronic structures of the vitreous state in the Li₂OAl₂O₃SiO₂ system and that of the crystalline forms differ considerably. The change of the electronic structure on crystallization is not direct, but is realized through the intermediate state whose electronic structure differs from that of glasses and crystals.     

Study of the relationship between the crystal structure of nanolayers and electrical properties in Al x Ga1? x As/In y Ga1? y As pseudobinary heterostructures by double-crystal X-ray diffraction

The structural parameters of individual layers of samples of a Al _x Ga_1−x As/In _y Ga_1−y As/GaAs pseudomorphic heterostructure have been determined by double-crystal X-ray diffraction. A relationship of the technological parameters of fabrication of heterostructures with their structural and electrical properties is established. The increase in the mobility of the 2D electron gas in the samples under study, caused by the increase in the growth temperature of the Al _x Ga_1−x As spacer layer and the decrease in the time of silicon δ doping from the two sides of the quantum well, correlates well with the degree of the sample structural quality. Original Russian Text ? R.M. Imamov, I.A. Subbotin, G.B. Galiev, 2008, published in Kristallografiya, 2008, Vol. 53, No. 2, pp. 210–213.     

ac Conductivity of 4.5 TiO2−x · 2 P2O5

The ac conductivity of a member of the family of glasses 4.5 TiO_2?x · 2 P₂O₅ has been measured between 77 and 300 K, and up to 100 kHz. The dc conductivity was measured over only part of this temperature range. The measured ac conductivity can be represented by σ_ac = σ₀ + σ₁ω^s, with s < 1, and temperature dependent. A similar equation describes the ac dielectric constant, ?_ac = ?₀ + ?₁ω^s?1, where $\text{?}{}_1\text{= σ}{}_1\text{tan}\text{1}\text{2}\text{sπ}$. A simple proportionality of s to temperature holds at low temperature; at the higher temperatures, the T-dependence of s is no longer simple. The observed behaviour of the ac properties of this glass is in general accordance with a recently proposed model for systems where transport occurs by hopping. The over-all behaviour is comparable to other transition metal glasses.Using the model and treating the carriers as polarons yields an expression for s in terms of temperature. Values for the polaron radius and the effective dielectric constant are then extracted from the measurements. These values are in good agreement with values for similar systems obtained by other means.     

Effect of annealing on an amorphous GexTe1−x matrix with Te cristallites

Annealing shows very different behaviour for Te crystallites in an amorphous Ge_xTe_1?x matrix as a function of x (x = 0.1 … 0.5). For x ? 0.2, annealing at increasing temperatures increases the number (size) of the Te crystallites with subsequent GeTe + Te crystallization. However for x ? 0.3 there is first a disappearance of Te crystallites, then an appearance of GeTe crystallites, and subsequently GeTe + Te crystallization. Crystallites of either Te or GeTe act as extrinsic defects which add to the intrinsic ones. Activatioon energy decreases (increases) and conductance increases (decreases) as the number of defects increases (decreases). In all cases the final metallic state is obtained only when both GeTe and Te crystallites are present.     

Raman and infrared spectra of As2Sx chalcogenide glasses with x ⩽ 3

Raman laser and far infrared spectra of As₂S_x glasses with x ? 3 are given and discussed. The purpose of the work is to bring a vibrational spectroscopic contribution to the study of these glasses and to the hypothesis, still under discussion in the literature, that they might be constituted either by a homogeneous vitreous phase or by a mixture of As₂S₃ and As₄S₄.Our results confirm a phase separation, with formation of ß-As₄S₄, below a certain value of x, which depends not only on the preparation method of the samples but also on other factors such as melting time. Laser irradiation of ß-As₄S₄ modifies its Raman spectrum. Such a phenomenon is attributable to two principal factors, either a partial polymerization or formation of a species richer in arsenic. A structural and formation model of the As₂S_x glasses is given, starting from a more generalized structural model of vitreous As₂S₃ which is an accord with the vibrational results and those by the diffraction method in the literature.     

Nanostructured crystals of fluorite phases Sr1 ? xRxF2 + x (R = Y, La-Lu) and their ordering: Part III. A study of the refractive indices

The refractive indices n of Sr_{1 − x} R _x F_{2 + x} crystals (R = Y, La-Lu; 0 ≤ x ≤ 0.5) have been measured at wavelengths of 0.436, 0.546, and 0.589 μm. It is established that n increases when there is an increase in the RF₃ content x according to a weakly quadratic law for each R. For the isoconcentration series of Sr_0.9 R _0.1F_2.1 crystals, the change in n in the series of rare earth elements has a pronounced nonlinear character, which reflects the nonmonotonous change in the properties of compounds in the R series. It is shown that the method of molecular refraction additivity can be used to calculate n for Sr_{1 − x} R _x F_{2 + x} crystals. By varying the RF₃ content in them, one can obtain optical media with a gradually varied refractive index n in the range 1.44–1.55, thus filling the gap in the n values between high ones for RF₃ crystals and low ones for crystals of alkaline earth fluorides MF₂. Original Russian Text ? T.M. Glushkova, D.N. Karimov, E.A. Krivandina, Z.I. Zhmurova, B.P. Sobolev, 2009, published in Kristallografiya, 2009, Vol. 54, No. 4, pp. 642–647.     

The electrical and structural properties of InyGa1 ? yAs/InxAl1 ? xAs/InP quantum wells with different InAs content

In _x Al_{1 − x} As/In _y Ga_{1 − y} As/In _x Al_{1 − x} As/InP HEMT structures has been investigated with a change in the InAs molar fraction both in the quantum well and the buffer layer. The electrical parameters of the samples are measured at different temperatures. The structural parameters of the layers and the characteristics of the interfaces between them are determined by double-crystal X-ray diffraction. An increase in the Hall mobility and electron concentration, as well as in the structural quality of the samples, is observed alongside an increase in the InAs molar fraction in the quantum well. It is established that high electron mobility is retained at small (to 5%) mismatches between the buffer layer and substrate.     

A Comparative Study of (tBu3Si)SiX2SiX2(SitBu3) (X?=?Cl, Br, I) Including the Result of the X-Ray Structure Analysis of (tBu3Si)SiI2SiI2(SitBu3)

Abstract  

The tetraiodotetrasilane (tBu₃Si)SiI₂SiI₂(SitBu₃) can be prepared from precursor (tBu₃Si)SiH₂SiH₂(SitBu₃). When (tBu₃Si)SiH₂SiH₂(SitBu₃) was treated with an excess of iodine at 120 °C, (tBu₃Si)SiI₂SiI₂(SitBu₃) was formed. X-ray quality crystals of (tBu₃Si)SiI₂SiI₂(SitBu₃) were grown from benzene at ambient temperature. The tetraiodotetrasilane (tBu₃Si)SiI₂SiI₂(SitBu₃) crystallizes in the monoclinic space group C2/c, a = 10.0110(10) ?, b = 13.9130(10) ?, c = 25.422(2) ?, β = 99.072(4)°, V = 3496.6(5) ?³, Z = 4, d _calcd = 1.829 g cm³; R ₁ = 0.0844, wR ₂ = 0.1854 for 3,017 reflections with I > 2σ(I). X-ray-crystallographic data show that the bromo and iodo derivatives (tBu₃Si)SiX₂SiX₂(SitBu₃) (X = Br, I) are isomorphous. The solid-state structure of (tBu₃Si)SiI₂SiI₂(SitBu₃) as well as those of (tBu₃Si)SiX₂SiX₂(SitBu₃) (X = Cl, Br) reveals a staggered conformation which adopts a trans-orientation of the supersilyl substituent. Unequal dihedral angles as found in (tBu₃Si)SiX₂SiX₂(SitBu₃) (X = Cl, Br, I) indicate that these compounds are sterically overcrowded.