Interaction of Ag with the Si(1 1 1)1 × 1–H surface

Synchrotron radiation based photoemission spectroscopy (SRPES) and low energy electron diffraction (LEED) are used to study the interaction between Ag atoms and the Si(1 1 1)1 × 1–H surface. At an Ag coverage of 0.063 monolayers (ML) on the Si(1 1 1)1 × 1–H surface, the Si 2p component corresponding to Si–H bonds decreases, and an additional Si 2p component appears which shifts to a lower binding energy by 109 meV with respect to the Si bulk peak. The new Si 2p component is also observed for 0.25 ML Ag on the Si(1 1 1)7 × 7 surface. These findings suggest that Ag atoms replace the H atoms of the Si(1 1 1)1 × 1–H surface and form direct Ag–Si bonds. Contrary to the widely accepted view that there is no chemical interaction between Ag particles and the H-passivated Si surface, these results are in good agreement with recent first-principles calculations.     

Atomic structure of two-dimensional binary surface alloys: Si(111)-√21 × √21 superstructure

The atomic structures of Au and Ag co-adsorption-induced √21 × √21 superstructure on a Si(111) surface, i.e., (Si(111)-√21 × √21-(Au, Ag)), where the Si(111)-5 × 2-Au surface is used as a substrate, have been investigated using reflection high-energy positron diffraction (RHEPD) and photoemission spectroscopy. From core-level spectra, we determined the chemical environments of Ag and Au atoms present in the Si(111)-√21 × √21-(Au, Ag) surface. From the rocking curve and pattern analyses of RHEPD, we found that the atomic coordinates of the Au and Ag atoms were approximately the same as those of the Au and Ag atoms in other Si(111)-√21 × √21 surfaces with different stoichiometries. On the basis of the core-level and RHEPD results, we revealed the atomic structure of the Si(111)-√21 × √21-(Au, Ag) surface.     

Scanning tunneling microscopy at multiple voltage biases of stable “ring-like” Ag clusters on Si(111)–(7 × 7)

Since more than twenty years it is known that deposition of Ag onto Si(111)–(7 × 7) leads under certain conditions to the formation of so-called “ring-like” clusters, that are particularly stable among small clusters. In order to resolve their still unknown atomic structure, we performed voltage dependent scanning tunneling microscopy (STM) measurements providing interesting information about the electronic properties of clusters which are linked with their atomic structure. Based on a structural model of Au cluster on Si(111)–(7 × 7) and our STM images, we propose an atomic arrangement for the two most stable Ag “ring-like” clusters.     

H adsorption at Ag/Si interfaces in epitaxially grown Ag(1 1 1) films on Si(1 1 1)7 × 7 substrates

The interaction of atomic H with Ag(1 1 1)/Si(1 1 1)7 × 7 surfaces was studied by thermal desorption (TD) spectroscopy and scanning tunneling microscopy (STM) at room temperature. TD spectroscopy revealed an intense peak from mono H–Si bonds, even though the Si surface was covered by the Ag atoms. This peak was not observed from Ag-coated SiO₂/Si substrates. STM observation showed no clear change of the Ag surface morphology resulting from H exposure. All these results indicate that the atomic H adsorbs at neither the Ag surfaces nor Ag bulk sites, but at the Ag/Si interface by diffusing through the Ag film.     

Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1 × 1) to (7 × 7) reconstruction revisited

Using Scanning Tunneling Microscope (STM), we show that the surface undergoes phase transformation from disordered “1 × 1” to (7 × 7) reconstruction which is mediated by the formation of Si magic clusters. Mono-disperse Si magic clusters of size ~ 13.5 ± 0.5 Å can be formed by heating the Si(111) surface to 1200 °C and quenching it to room temperature at cooling rates of at least 100 °C/min. The structure consists of 3 tetra-clusters of size ~ 4.5 ? similar to the Si magic clusters that were formed from Si adatoms deposited by Si solid source on Si(111)-(7 × 7) [1]. Using real time STM scanning to probe the surface at ~ 400 °C, we show that Si magic clusters pop up from the (1 × 1) surface and form spontaneously during the phase transformation. This is attributed to the difference in atomic density between “disordered 1 × 1” and (7 × 7) surface structures which lead to the release of excess Si atoms onto the surface as magic clusters.     

Tantalum induced butterfly-like clusters on Si (111)-7 × 7 surface: STM/STS study at low coverage

The adsorption of the small amounts of tantalum on Si (111)-7 × 7 reconstructed surface is investigated systematically using scanning tunneling microscopy and tunneling spectroscopy combined with first-principles density functional theory calculations. We find out that the moderate annealing of the Ta covered surface results in the formation of clusters of the butterfly-like shape. The clusters are sporadically distributed over the surface and their density is metal coverage dependent. Filled and empty state STM images of the clusters differ strongly suggesting the existence of covalent bonds within the cluster. Tunneling spectroscopy measurements reveal small energy gap, showing semiconductor-like behavior of the constituent atoms. The cluster model based on experimental images and theoretical calculations has been proposed and discussed. Presented results show that Ta joins the family of adsorbates, that are known to form magic clusters on Si (111)-7 × 7, but its magic cluster has the structural and electronic properties that are different from those reported before.     

Atomic and electronic structures of Ag/Si(100)-c(6 × 2) surface: A first-principles study

Using the experimental data obtained mainly with the scanning tunneling microscopy observations, density functional theory calculations have been applied to examine an atomic structure of the Ag/Si(100)-c(6 × 2) reconstruction. A set of structural models has been proposed having a similar Si(100) substrate reconstruction which incorporates rows of top Si atom dimers and troughs in between the rows. Stability of about twenty models with various Ag coverage ranging from 1/6 to 1 ML has been tested, that allows reducing the number of plausible models to four. Two of these four models have been attributed to the “regular” intrinsic Ag/Si(100)-c(6 × 2) reconstruction, while the other two to its defect-induced modification. The latter is observed in the local areas near defects and domain boundaries and exhibits 3 × 2 periodicity. Comparing the results of calculations with the experimental STM images, it has been concluded that while the Si(100) substrate reconstruction is solid, the Ag subsystem is flexible due to the presence of the lightly bonded mobile Ag atoms.     

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

By combined investigation of STM and synchrotron PES on Ge/Si(5 5 12)-2 × 1 at 530 °C, it has been found that, in addition to the upward-relaxed surface Si atoms, a subsurface Si atom is also readily replaced by an arriving Ge atom at the initial adsorption stage. Such enhanced interdiffusion is due to a unique character of one-dimensional chain structures of the reconstructed substrate, such as π-bonded and honeycomb chains not existing on other low-index Si surfaces such as Si(001)-c(4 × 2) and Si(111)-7 × 7, applying a tensile surface stress to the neighbouring subsurface atoms. Interdiffusion of Ge having lower surface energy induces adsorption of the displaced Si atoms on the surface to form sawtooth-like facets composed of (113)/(335) and (113)/(112) with arriving Ge atoms until the surface is filled with those facets. Such displacive adsorption is the origin of high Si concentration of formed facets.     

Electron-energy-loss spectroscopy of C60 monolayer films on active and inactive surfaces

The characteristics of interaction between C₆₀ molecules and Si(1 1 1)-7×7, Ag/Si(1 1 1)-√3×√3 R30° and layered material MoS₂ surfaces have been investigated using electron-energy-loss spectroscopy (EELS). The EEL spectrum of C₆₀/Si(1 1 1)-7×7 shows a new peak at loss energy of 2.7 eV. This indicates the existence of charge transfer from the substrate to C₆₀ molecules. The EEL spectrum of a C₆₀ monolayer film grown on a cleaved surface of MoS₂ is almost the same as that of bulk C₆₀. The EEL spectrum of a C₆₀ monolayer film on an Ag/Si(1 1 1) surface is quite different from that on a clean Si(1 1 1)-7×7 surface, although the films on those substrates have the same epitaxial arrangement. Furthermore, intensities of energy-loss peaks of C₆₀/Ag/Si(1 1 1) are slightly smaller than those of C₆₀/MoS₂ in spite of having the same loss-energy. This suggests that the interaction between C₆₀ molecules and the Ag/Si(1 1 1) surface is stronger than that between C₆₀ molecules and the MoS₂ surface.     

Structural analysis of Si(111)-√21 × √21-(Ag,Cs) surface by reflection high-energy positron diffraction

We have investigated the Si(111)-√21 × √21-(Ag, Cs) superstructure using reflection high-energy positron diffraction. Rocking curve analysis based on the dynamical diffraction theory reveals that Cs atoms are located at a height of 3.04 Å above the underlying √3 × √3-Ag structure and that they form a triangular structure with a side length of 10.12 Å. The structure of the Si(111)-√21 × √21-(Ag, Cs) surface is significantly different from those of the Si(111)-√21 × √21-Ag and Si(111)-√21 × √21-(Ag, Au) surfaces, probably because of the different electronic structures of the alkali and noble metal atoms.     

Analysis of multimode BDK doped POF gratings for temperature sensing

We report a temperature sensor based on a Bragg grating written in a benzil dimethyl ketal (BDK) doped multimode (MM) polymer optical fiber (POF) for the first time to our knowledge. The thermal response was further analyzed in view of theory and experiment. In theory, with the order of the reflected mode increasing from 1st to 60th order, for MM silica fiber Bragg grating (FBG) the temperature sensitivity will increase linearly from 16.2 pm/°C to 17.5 pm/°C, while for MM polymer FBG the temperature sensitivity (absolute value) will increase linearly from ?79.5 pm/°C to ?104.4 pm/°C. In addition, temperature sensitivity of MM polymer FBG exhibits almost 1 order larger mode order dependence than that of MM silica FBG. In experiment, the Bragg wavelength shift will decline linearly as the temperature rises, contrary to that of MM silica FBG. The temperature sensitivity of MM polymer FBG is ranged from ?0.097 nm/°C to ?0.111 nm/°C, more than 8 times that of MM silica FBG, showing great potential used as a temperature sensor.     

Clustering and layering of In adatoms on low and high index silicon surfaces: A comparative study

Using the morphological differences of low and high index surfaces as templates for metal growth, several low dimensional overlayer structures with novel structural and electronic properties can be formed. We present here a first report on submonolayer adsorption and residual thermal desorption studies of In adatoms on reconstructed high index Si (5 5 12)?2 × 1 surface and compare it with the observations on planar Si (111)?7 × 7 surface. The study is done by using in-situ Ultra High Vacuum surface sensitive probes like Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED). These conventional wide area techniques provide an understanding of atomistic issues involved in the evolution of the interface. We have observed an anomalous growth mode during adsorption at room temperature (RT) above 2ML, which includes adatom layering and clustering on Si (111) surface. This is also manifested during the desorption experiments on both surfaces, and the subtle differences on the two surfaces are discussed. The observation of LEED pattern during the adsorption process shows formation of different superstructural phases on Si (111)?7 × 7 surface. On Si (5 5 12) 2 × 1 surface we observe the sequential 2× (225), 2× (337) and 2× (113) facet formation during adsorption/desorption, which include quasi 1D-nanowire/chain structures. A combination of lattice strain effects, presence of step-edge barrier and quantum size effects are employed to speculate the differences in adsorption and desorption.     

Adsorption of molecular SiO2 on a clean Si(1 0 0) surface

We have investigated the adsorption of molecular (gaseous) SiO₂ on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. The SiO₂ molecule is found to be chemisorbed on various sites on the Si surface and the most energetically favourable structure is on top of the dimers. The minimum energy pathways for the various adsorption channels indicate that the reaction is barrierless in all cases. The corresponding vibrational spectrum is also calculated and the adsorbed molecules are, as expected, found to have red-shifted vibrational frequencies. The energetically favourable adsorption sites and adsorption energies are comparable to the results found for SiO.     

Understanding 4-bromostyrene Adsorption on the Si(001)-(1 × 2) surface: A density functional theory study

Adsorption properties of 4-bromostyrene (Br–Sty) on the Si(001)-(1 × 2) surface are investigated by ab initio calculation based on density functional theory (DFT). For the adsorption of Br–Sty molecule on the Si(001)-(1 × 2) surface, we have assumed two possible cases within: (i) binding on the partially H-terminated surface and (ii) binding on the clean surface. For the first case, we have estimated two different binding sides: (i) Bromine-terminated bindings and (ii) Carbon-terminated binding. The adsorption energies of Br-terminated and C-terminated binding were found as 0.36 eV and 3.76 eV, respectively. In the same manner, we have also assumed two possible binding sides for the clean surface: (i) Br-terminated binding and (ii) ring-shaped binding. We have found adsorption energies for Br-terminated and ring-shaped binding as 0.14 eV and 1.10 eV on the clean surface, respectively. Moreover, the nudged elastic band method (NEB) was used to reveal the adsorption pathway of these binding models. These results serve to understand the possibility of the adsorption of Br–Sty molecules onto different kind of silicon surfaces into different reaction conditions.     

Hydrogen chemisorption on Si(111)√ 3×√ 3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy

Atomic H chemisorption on the Si(111)√ 3×√ 3R30^°-B surface has been studied by thermal desorption spectroscopy (TDS) and scanning tunneling microscopy (STM). The B-modified Si surface is known to be inert towards adsorbates, since the surface dangling bonds of Si adatoms are passivated by B atoms sitting in sub-surface sites. However, it was found that even on a perfectly passivated surface, H is adsorbed on the surface by destroying the original √ 3 × √ 3 structure. STM observations revealed that H exposure led to the creation of defects at surface sites, and H was subsequently adsorbed as Si-monohydride at these sites. H exposure also caused cluster island formation at the top surface. The islands are composed of hydrogenated amorphous Si atoms or B-hydrogen complexes.     

Atomic structure of Cs grown on Si(0 0 1)(2×1) surface by coaxial impact collision ion scattering spectroscopy

The atomic structure and the saturation coverage of Cs on the Si(0 0 1)(2×1) surface at room temperature have been studied by coaxial impact collision ion scattering spectroscopy (CAICISS). For the atomic structure of saturated Cs/Si(0 0 1)(2×1) surface, it is found that Cs atoms occupy a single adsorption site at T3 on the Si(0 0 1) surface. The height of Cs atoms adsorbed at T3 site is 3.18±0.05 Å from the second layer of Si(0 0 1)(2×1) surface. The saturation coverage estimated from the measured CAICISS intensity ratio and the proposed atomic structure is found to be 0.46±0.06 ML.     

Study on the formation mechanism of isoniazid crystal defects and defect elimination strategy based on ultrasound

In crystallization, crystal growth defects may reduce the strength and purity of crystals, which are not welcomed in the industry. Herein, isoniazid (INH) crystals were chosen as an example to investigate the formation of crystal defects at the molecular scale by combining experiments and molecular dynamics simulations. It was found that the strong interaction between the solvent and the crystal surface, high temperature, small stirring rate, and low supersaturation can lead to more pronounced crystal defects. The bulk severity of INH crystal defects was reflected by N₂ adsorption–desorption measurement. Besides, the single-crystal growth experiments manifested the rough growth mechanism for the (1 1 0) surface in the axial direction and the stepwise growth mechanism for the (0 0 2) surface in the radial direction. For the (1 1 0) surface, cavities occurred under the condition where the growth rate of the crystal edges and corners was greater than that of the surface center due to the starvation phenomenon of diffusion. While for the (0 0 2) surface, when the solvent removal rate was lower than the solute insertion rate, liquid inclusions were formed, which was verified by Raman microscopy. Furthermore, the ultrasonic strategy was successfully proposed to eliminate INH crystal defects and prepare perfect INH crystals. Moreover, the mechanism of ultrasound to reduce the crystal defect was proposed. We believe this work can provide insights into the design and preparation of defect-free crystals in crystallization.     

Effect of oxygen on the stability of Ag islands on Si(111)-7 × 7

We have used scanning tunneling microscopy to probe the effect of oxygen exposure on an ensemble of Ag islands separated by a Ag wetting layer on Si(111)-7 × 7. Starting from a distribution dominated by islands that are 1 layer high (measured with respect to the wetting layer), coarsening in ultrahigh vacuum at room temperature leads to growth of 2-layer islands at the expense of 1-layer islands, which is expected. If the sample is exposed to oxygen, 3-layer islands are favored, which is unexpected. There is no evidence for oxygen adsorption on top of Ag islands, but there is clear evidence for adsorption in the wetting layer. Several possible explanations are considered.     

First-principles study of small palladium clusters on NiAl(1 1 0) alloy surface

Theoretical calculations focused on the geometry, stability, electronic and magnetic properties of small palladium clusters Pd_n (n=1–5) adsorbed on the NiAl(1 1 0) alloy surface were carried out within the framework of density functional theory (DFT). In agreement with the experimental observations, both Ni-bridge and Al-bridge sites are preferential for the adsorption of single palladium atom, with an adsorption energy difference of 0.04 eV. Among the possible structures considered for Pd_n (n=1–5) clusters adsorbed on NiAl(1 1 0) surface, Pd atoms tend to form one-dimensional (1D) chain structure at low coverage (from Pd₁ to Pd₃) and two-dimensional (2D) structures are more stable than three-dimensional (3D) structures for Pd₄ and Pd₅. Furthermore, metal-substrate bonding prevails over metal–metal bonding for Pd cluster adsorbed on NiAl(1 1 0) surface. The density of states for Pd atoms of Pd/NiAl(1 1 0) system are strongly affected by their chemical environment. The magnetic feature emerged upon the adsorption of Pd clusters on NiAl(1 1 0) surface was due to the charge transfer between Pd atoms and the substrate. These findings may shade light on the understanding of the growth of Pd metal clusters on alloy surface and the construction of nanoscale devices.     

Characterization of luminescent chromophore obtained from silica spheres

Blue light emitting chromophores have been separated from silica spheres by soaking them into acetone for 120 days. The luminescent chromophores were not obtained from other solvents, including ether, methanol, ethanol, 2-propanol, chloroform and tetrahydrofuran. According to the Fourier transform infrared spectrum, the luminescent material is composed of C–OH, –CH₂, –CH₃, C=O, and Si–O–Si. UV–visible absorption peak of the chromophore is at 5.17 eV (240 nm). Field emission scanning electron microscope images show small cracks on the surface of aged spheres. The luminescence peak was at 2.81 eV (441 nm) for excitation energy between 3.88 and 3.35 eV and slightly shifted toward lower energy for excitation energy lower than 3.35 eV. The deconvoluted luminescent spectrum shows two emission bands at 3.08 and 2.74 eV, which are well-matched the oxygen deficient center model. Compared to the absorption peak (5.17 eV) and the emission peak (2.81 eV), large Stokes shift (2.36 eV) is observed.