Rietveld analysis and multiferroic properties of Fe doped Ba0.95Bi0.05TiO3 ceramics

We report on the structural, magnetic and ferroelectric properties of Fe doped Ba_0.95Bi_0.05TiO₃ (Ba_0.95Bi_0.05Ti_1−yFe_yO₃ (0 ≤ y ≤ 0.1)) ceramics prepared by solid state reaction. Rietveld analysis shows that compounds with y ≤ 0.07 have a single phase-tetragonal structure (space group P4mm), and the tetragonality (c/a) decreases as x increases. Ba_0.95Bi_0.05Ti_0.93Fe_0.07O₃ ceramic shows ferromagnetic order with a Curie temperature of about 700 K and ferroelectric order at room temperature. These results indicate that the Ba_0.95Bi_0.05Ti_0.93Fe_0.07O₃ can be useful as a multiferroic material.     

Ferroelectric properties of Pr6O11-doped Bi4Ti3O12

Praseodymium doped Bi₄Ti₃O₁₂ (BIT) ceramics with composition Bi_2.9Pr_0.9Ti₃O₁₂ (BPT) were prepared by solid state reaction. These samples have polycrystalline Bi-layered perovskite structure without preferred orientation, and consist of well-developed plate-like grains with random orientation. Pr doping into BIT causes a large shift of the Curie temperature (T_C) of the BIT from 675 to 398 °C. At an electric field of 87 kV/cm, the remanent polarization and the coercive field of the BPT ceramics are 30 μC/cm² and 52 kV/cm, respectively. Furthermore, the dielectric permittivity and the dissipation factor of the BPT ceramics are 300 and 0.003 at 1 MHz, 1 V, and room temperature. Ferroelectric properties of the BPT ceramics are superior to V-doped Bi₄Ti₃O₁₂ (∼20 μC/cm² and 80 kV/cm) and (Sr, Ta)-doped Bi₄Ti₃O₁₂ (∼12 μC/cm² and 71 kV/cm) ceramics. In addition, the dense ceramics of praseodymium-doped B₄Ti₃O₁₂ were obtained by sintering at 1100 °C, about 100-200 °C lower than those of the SrBi₂Ta₂O₉ system.     

Electrical studies on Zr-modified Bi3.25La0.75Ti3O12: a promising FRAM ceramic

Zr-modified Auruvillius family of lanthanum bismuth titanate, namely Bi_3.25La_0.75Ti_3?xZr_xO₁₂ (BLTZ, x = 0, 0.1, 0.3, 0.5, 0.7 and 1), was prepared by solid-state reaction method. Dielectric properties of the ceramics were studied as a function of temperature. Hysteresis measurements were also performed. Among the composition, Bi_3.25La_0.75Ti_2.9Zr_0.1O₁₂ (BLTZ1) showed large remnant polarization compared to the promising ceramic, namely Bi_3.25La_0.75Ti₃O₁₂. The results were corroborated with the pyroelectric, electric polarization and Raman spectroscopic data.     

Determination of the magnetoelectric coupling coefficient from temperature dependences of the dielectric permittivity for multiferroic ceramics Bi5Ti3FeO15

In the multiferroic materials, the dielectric and magnetic properties are closely correlated through the coupling interaction between the ferroelectric and magnetic order. We attempted to determine the magnetoelectric coupling coefficient from the temperature dependences of the dielectric permittivity for multiferroic Bi₅Ti₃FeO₁₅. Multiferroic ceramics Bi₅Ti₃FeO₁₅ belong to materials of the Aurivillius-type structure. Multiferroic ceramics Bi₅Ti₃FeO₁₅ was synthesized via sintering the Bi₂O₃ and Fe₂O₃ mixture and TiO₂ oxides. The precursor material was ground in a high-energy attritorial mill for 5 hours. This material was obtained by a solid-state reaction process at T = 1313 K. We investigated the temperature dependences of the dielectric permittivity for the different frequencies. From the dielectric measurements, we determined the temperature of phase transition of the ferroelectric-to-paraelectric type at about 1013 K. Based on dielectric measurements and theoretical considerations, the values of the magnetoelectric coupling coefficient were specified.     

Si基Bi4Ti3O12铁电薄膜的制备与特性研究

采用sol-gel工艺, 在分层快速退火的工艺条件下成功地制备了高质量Si基Bi_{4Ti3O12铁电薄膜. 研究了Si基Bi4Ti3O12薄膜的生长行为、铁电性能、C-V特性和疲劳特性. 研究表明: Si基Bi4Ti3O12薄膜具有随退火温度升高沿c轴择优生长的趋势; 退火温度通过影响薄膜的晶粒尺寸、生长取向和薄膜中载流子的浓度来改变Si基Bi关键词： sol-gel法 铁电薄膜 4Ti3O12')" href="#">Bi4Ti3O12 C-V特性}     

Room-temperature multiferroic properties of Bi4.15Nd0.85Ti3FeO15 thin films prepared by the metal–organic decomposition method

Aurivillius-structured Bi_4.15Nd_0.85Ti₃FeO₁₅ multiferroic thin films with four perovskite slabs were deposited on Pt/Ti/ SiO₂/Si substrates by the metal–organic decomposition method. The structural, dielectric and multiferroic properties of the films were investigated. Good ferroelectric behavior along with large dielectric constant and small loss factor were observed at room temperature. A weak ferromagnetic rather than an antiferromagnetic property was observed at room temperature by magnetic measurement. Moreover, the ferromagnetic property was enhanced when the temperature was below 13 K and a large saturation magnetization of about 5.4 emu/cm³ was obtained at 4 K. Possible reasons are put forward to discuss the complicated magnetic property.     

Influence of cycling electric polarization on multiferroic behaviors in heterostructural films composed of ferroelectric and ferromagnetic oxides

The CoFe₂O₄/Pb(Zr_0.52Ti_0.48)O₃ bilayer films were prepared by a sol–gel process, and the influence of cycling electric polarization on the multiferroic behaviors of the bilayer films was studied. The ferroelectric polarization hysteresis loops under various choices of magnetic bias were measured by an integrating current method. The results showed that after undergoing cycling electric polarization the ferroelectric polarization of the bilayer films enhanced and the suppression of ferroelectric polarization by external magnetic bias remarkably weakened. Based on the measurements of activation energy and leakage current, we confirmed that the oxygen vacancy migration in the bilayer films occurred during cycling electric polarization. Furthermore, we analyzed the mechanism of the influence of cycling electric polarization on the multiferroic behaviors of the bilayer films and attributed it to the oxygen vacancy migration, which could cause a part of ferroelectric domains to be unpinned from the oxygen vacancies and become more active under electric field and magnetic bias.     

Defect driven multiferroicity in Gd doped BiFeO3 at room temperature

This paper reports that defect driven magnetism can be obtained at room temperature by optimizing metal ion concentration in bismuth ferrite (BFO) following our novel slow step solid state sintering route. We observed a clean signature of enhanced multiferroic behavior in Gd doped bismuth ferrite (Gd-BFO) bulk ceramics at room temperature (RT). Bismuth rich iron deficient Gd-BFO ceramics were prepared by solid state route through slow step sintering schedule at 850 °C. At particular composition, (Bi_1.2Gd_0.1Fe_0.8O₃), this materials completely transform from rhombohedral R3c to orthorhombic Pn2₁a space group. We emphasized that excess bismuth is expected to act as point defects and occupy interstitials positions, which in turn interact by oxygen vacancies. These defects are likely to promote defect driven ferromagnetism in BFO system. Incorporation of Gd in presence of excess bismuth in BFO enhanced both spin and electric polarization at room temperature. We also infer that Gd substitution in BFO is likely to suppress spiral spin modulation, which also favors ferromagnetism in Gd-BFO.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Low temperature fired Ni-Cu-Zn ferrite with Bi4Ti3O12

The Ni-Cu-Zn ferrites with different contents of Bi₄Ti₃O₁₂ ceramics (1-8 wt%) as sintering additives were prepared by the usual ceramic technology and sintered at 900 °C to adapt to the low temperature co-fired ceramic (LTCC) technology. The magnetic and dielectric properties of the ferrite can be effectively improved with the effect of an appropriate amount of Bi₄Ti₃O₁₂. For all samples, the ferrite sintered with 2 wt% Bi₄Ti₃O₁₂ has relatively high density (98.8%) and permeability, while the ferrite with 8 wt% Bi₄Ti₃O₁₂ has relatively good dielectric properties in a wide frequency range. The influences of Bi₄Ti₃O₁₂ addition on microstructure, magnetic and dielectric properties of the ferrite have been discussed.     

Ag/Bi4Ti3O12栅n沟道铁电场效应晶体管制备及存储特性

在溶胶-凝胶工艺获得高质量Bi₄Ti₃O₁₂薄膜的基础上 ，制备了Ag/Bi₄Ti₃O₁₂栅n沟道铁电场效应晶体管. 研 究了Si基Bi₄Ti₃O₁₂薄膜的生长特性及其对铁电薄膜/ 硅的界面状态和铁电场效应晶体管存储特性的影响. 研究表明，在合理的工艺条件下可以获 得具有较高c-轴择优取向的纯钙钛矿相Si基Bi₄Ti₃O₁₂ 铁电薄膜并有利于改善Bi₄Ti₃O₁₂/Si之间的界面特性; 顺时针回滞的C-V特性曲线和C-T曲线表明Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有极化存储效应和一定的极化电荷保持能力; 器件的转移(I< sub>sd}-V_G)特性曲线显示Ag/Bi₄Ti₃O_{12栅n沟道铁电场效应晶体管具有明显的栅极化调制效应. 关键词： 铁电场效应晶体管 4}Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 存储 特性 溶胶-凝胶工艺     

Ferroelectric and dielectric properties of La/Mn co-doped Bi4Ti3O12 ceramics

La/Mn co-doped Bi4Ti3O12 ceramics,Bi3.25La0.75Ti3-xMnxO12(x=0.02,0.04,0.06,0.08),were prepared by the solid-state reaction method.The influence of manganese substitution for the titanium part in Bi 3.25 La 0.75 Ti 3 O 12 on the sintering behaviour,microstructure,Raman spectra and electrical properties was investigated.The experimental results show that the phase composition of all samples with and without manganese doping,sintered at 1000 ℃,consists of a single phase with a bismuth-layered structure belonging to the crystalline phase Bi4Ti3O12.There is no evidence of any impurity phase,but a small change in crystallographic orientation is observed.The Curie temperature of Bi3.25La0.75Ti3-xMnxO12 ceramics is steadily shifted to lower temperature with increasing Mn-doping content.Moreover,the remnant polarisation(Pr) of Bi3.25La0.75Ti2.92Mn0.08O12 samples increases with Mn-doping content,and the Bi3.25La0.75Ti2.92Mn0.08O12 sample exhibits the largest P r of 16.6 μC/cm 2.     

Enhanced electrical properties of lead-free Bi4−xSbxTi3O12 ceramics with high Tc

Bi_4?xSb_xTi₃O₁₂ (BST) ceramics were prepared and studied in this work in terms of Sb³⁺-modified microstructure and phase development as well as electrical response. By increasing Sb content, the phase structure of the ceramics changed from orthorhombic (Bi₄Ti₃O₁₂-like) to pyrochlore (Bi₂Ti₂O₇-like) phase. Raman spectroscopy showed that the intensities of the lattice vibration modes at frequencies decrease, whereas all bands and bandwidths in all frequency numbers also demonstrate changes. According to the results processed from SEM, Sb³⁺ into the Bi₄Ti₃O₁₂ (BIT) matrix had the effect of increasing the material grain size. ε_r, ε_m, P_r, d₃₃ and T_c of Bi_3.90Sb_0.10Ti₃O₁₂ ceramics are found to be 307, 3492, 8.09 μC cm^?2, 18 pC/N and 660 °C, respectively. And Bi_4?xSb_xTi₃O₁₂ ceramics have good temperature stability, which is very suitable for the practical high-temperature applications.     

Improved multiferroic properties of La-doped 0.6BiFeO3—0.4SrTiO3 solid solution ceramics

The 0.6（Bi1-xLax）FeO 3-0.4SrTiO 3（x = 0,0.1） multiferroic ceramics are prepared by a modified Pechini method to study the effect of substitution of SrTiO3 and La in BiFeO3.The X-ray diffraction patterns confirm the single phase characteristics of all the compositions each with a rhombohedral structure.The magnetic properties of the ceramics are significantly improved by a solid solution with SrTiO3 and substitution of La.The values of the dielectric constant ε r and loss tangent tan δ of all the samples decrease with increasing frequency and become constant at room temperature.The La-doped 0.6BiFeO3-0.4SrTiO3 ceramics exhibit improved dielectric and ferroelectric properties,with higher dielectric constant enhanced remnant polarization（Pr） and lower leakage current at room temperature.Compared with a anti-ferromagnetic BiFeO3 compound,the 0.6（Bi0.9La0.1）FeO3-0.4SrTiO3 sample shows the optimal ferromagnetism with remnant magnetization M r ～ 0.135 emμ/g and ferroelectricity with Pr ～ 5.94 μC/cm 2 at room temperature.     

The doping effects of BiFe1-xCoxO3 (x=0.0-0.8) in layered perovskite Bi4Ti3O12 ceramics

Bi5Fe1-xCoxTi3O15(x = 0.0, 0.2, 0.4, 0.5, 0.6, and 0.8) multiferroic ceramics are synthesized in two steps using the solid state reaction technique. X-ray diffraction patterns show that the samples have four-layer Aurivillius phases. At room temperature (RT), the samples each present a remarkable coexistence of ferromagnetism (FM) and ferroelectricity (FE). The remnant polarization (2P r ) reaches its greatest value of 14 μC/cm 2 at x = 0.6. Remnant magnetization (2M r ) first increases and then decreases, and the greatest 2M r is 7.8 menu/g when x = 0.5. The magnetic properties for x = 0.4 are similar to those for x = 0.6, indicating that the magnetic properties originate mainly from the coupling between Fe 3+ and Co 3+ ions, rather than from their own magnetic moments.     

Temperature-dependent Mössbauer and dielectric studies of Mg0.95Mn0.05Fe1.0Ti1.0O4

The effect of tetravalent Ti⁺⁴ substitution in Mg_0.95Mn_0.05Fe₂O₄ on its magnetic and electrical properties has been studied using X-ray diffraction, Mössbauer spectroscopy, isothermal dc magnetization and dielectric measurements. X-ray diffraction studies have shown the structural transformation from cubic to tetragonal with the Ti⁺⁴ substitution. The Mössbauer spectra of Mg_0.95Mn_0.05Fe_1.0Ti_1.0O₄ recorded in the temperature range 20-300 K shows the presence of the magnetic as well as quadrupole interactions. The isothermal hysteresis loop infers that the system exhibits a ferrimagnetic ordering at room temperature. The Zero-field-cooled (ZFC) and field-cooled (FC) magnetization studies support ferrimagnetic ordering of Mg_0.95Mn_0.05Fe_1.0Ti_1.0O₄ at room temperature. Signatures of ferroelectric transition have been observed in the temperature range 200-300 K from dielectric measurements. The observed magnetic and dielectric behaviour indicate that this material exhibits multiferroic behaviour.     

(Na1/2Bi1/2)Cu3Ti4O12陶瓷的微观结构和电学性质

利用固相反应法在不同烧结温度条件下制备了一系列(Na_1/2Bi_1/2)Cu₃Ti₄O₁₂(NBCTO)陶瓷样品,研究了它们的晶体结构、微观组织结构、介电性质和复阻抗及其随温度的变化. 实验发现NBCTO陶瓷所呈现出的电学性质与CaCu₃Ti₄O₁₂陶瓷相应的电学性质非常类似. 烧结温度为990℃至1060℃范围的NBCTO陶瓷样品室 关键词： 高介电材料 介电性质 复阻抗 内阻挡层电容     

Magnetic,dielectric and optical properties of five-layered Aurivillius phase Bi6Fe2Ti3O18-based ceramics

The structural, magnetic, dielectric and optical properties of Aurivillius Bi₆Fe₂Ti₃O₁₈-based ceramics were investigated in detail. The replacement of Co for Fe/Ti ions obviously varies the grain morphology. Compared with Bi₆Fe₂Ti₃O₁₈ (BFTO) with antiferromagnetic ordering, a spin glass state can be observed in Bi_5.25La_0.75Fe₂Ti₃O₁₈ ceramic, while other samples exhibit the ferromagnetic behavior. The specimen Bi₆Fe₂Ti₂(NbCo)_0.5O₁₈ (BFTNCO) represents the largest remanent magnetization M_r of 0.93emu/g among all the samples, which can be attributed to the combination of a short lattice parameter c and a large lattice distortion as well as more magnetic ions in a unit cell. The room-temperature dc conductivity of BFTNCO is one order magnitude lower than that of BFTO. In addition, the band gaps of Co-doped samples are about 0.2eV smaller than these of Co-free samples. This work provides a promising path forward to tailor the multiferroic and optical properties in five-layered Aurivillius compounds.     

Micro‐Raman study of Zr‐substituted Bi4Ti3O12 ceramics

We have studied the lattice vibrational modes of Zr‐substituted Bi₄Ti₃O₁₂ ceramics using micro‐Raman spectroscopy. Replacement of Zr at the Ti site in the perovskite block is found from the increase in the lattice parameters as a function of Zr contents. Combined X‐ray diffraction patterns and Raman analysis suggested less than 40 mole% Zr solubility in Bi₄Ti₃O₁₂. At 40 mole% of Zr substitution or above, the unreacted monoclinic‐phase ZrO₂ is observed in the X‐ray diffraction patterns and the Raman spectra. The incorporation of Zr in Bi₄Ti₃O₁₂ reduces the soft mode wavenumber and the transition temperature. Moreover, temperature dependent studies confirmed the ferroelectric to paraelectric transition in Bi₄Ti₃O₁₂ at about 675 °C. On increasing the Zr content up to 40% on the Ti sites of Bi₄Ti₃O₁₂, a systematic decrease in the phase transition temperature from 675 to 630 °C was observed. Copyright © 2007 John Wiley & Sons, Ltd.     

Effect of B-site isovalent doping on electrical and ferroelectric properties of lead free bismuth titanate ceramics

In the present work, zirconium modified bismuth titanate ceramics have been studied as potential lead-free ferroelectric materials over a broad temperature range (RT – 800 °C). Polycrystalline samples of Bi₄Ti_3−xZr_xO₁₂ (x=0.2, 0.4, 0.6) (BZrT) with high electrical resistivity were prepared using the solution combustion technique. The effect of Zr doping on the crystalline structure, ferroelectric properties and electrical conduction characteristics of BZrT ceramics were explored. Addition of zirconium to bismuth titanate enhances its dielectric constant and reduces the loss factor as it introduces orthorhombic distortion in bismuth titanate lattice which is exhibited by the growth along (0010) lattice plane. Activation energy due to relaxation is found to be greater than that due to conduction thus confirming that electrical conduction in these ceramics is not due to relaxation of dipoles. Remanent polarization of the doped samples increases as the Zirconium content increases.