Crossover from negative to positive magnetoresistance in superconductor/ferromagnet composites thick films

Thick films of ((Bi, Pb)₂Sr₂Ca₂Cu₃O_x)_0.95/(LaSr_0.7Mn_0.3O₃)_0.05 [(Bi-2223)_0.95(LSMO)_0.05] composites were fabricated on (0 0 1)-oriented LaAlO₃ substrates by a simple melting–quenching–annealing method and their structural, morphological and magnetoelectrical properties carefully studied. Analysis of the X-ray diffraction patterns suggested a highly oriented growth along the c-axis of LSMO. This preferred orientation, with the crystal c-axis being perpendicular to the plane of the substrate, was considered to be indicative of a textured growth mode. Electrical and magnetic measurements showed the presence of ferromagnetism and superconductivity in the composite at temperatures above room temperature and below T∼50 K, respectively. A clear crossover from negative to positive magnetoresistance was observed at ∼80 K in a magnetic field as strong as 5 T.     

Classical in-plane negative magnetoresistance and quantum positive magnetoresistance in undoped InSb thin films on GaAs (1 0 0) substrates

Magnetoresistance (MR) effects have been investigated in perpendicular and parallel magnetic fields at 300, 80 K and liquid He temperatures for undoped InSb thin films 0.1–2.3 μm thick grown on GaAs(1 0 0) substrates by MBE. At high temperatures, the intrinsic carriers show the parabolic negative MR observable only in magnetic fields parallel to the film. The skipping-orbit effect due to surface boundary scattering in the classical orbits in the plane vertical to the film has been argued to be responsible for the negative MR. At low temperatures (T=80 K), the transport is dominated by the two-dimensional (2D) electrons in the accumulation layers at the InSb/GaAs(1 0 0) hetero interface; MR is positive and shows a logarithmic increase with anisotropy between parallel and perpendicular field orientation, arising from the 2D weak anti-localization (WAL) that reflects the interplay between the spin-Zeeman effect and strong spin–orbit interaction caused by the asymmetric potential at the interface (Rashba term). The zero-field spin splitting energy of Δ₀13 meV, the electron effective mass of m^*0.10m₀ seven times of the band edge mass in bulk InSb and the effective g-factor of |g^*|15 in the accumulation layer have been inferred from fits of MR for the 0.1 μm thick film to the 2D WL theory.     

Microscopic mechanisms of self-compensation in Si delta-doped GaAs

We combined systematic cross-sectional scanning tunneling microscopy and spectroscopy investigations with Hall measurements on single Si delta-doped layers, as well as Si delta-doped superlattices in GaAs. We found that Si self-compensation involves nucleation and growth of electrically neutral Si precipitates at the expense of the conventional donor Si phase.     

The photomagnetic effect in Mn delta-doped heteronanostructures with an InGaAs/GaAs quantum well

The influence of embedding a Mn delta layer into heteronunostructures with an InGaAs/GaAs quantum well on the photomagnetic spectra was investigated. The recombination parameters of a number of model structures were determined by the photomagnetic effect and planar photoconduction at high illumination.     

Oscillations of the magnetoresistance of a two-dimensional electron gas in a GaAs quantum well with AlAs/GaAs superlattice barriers in a microwave field

The effect of microwave radiation in the frequency range from 1.2 to 10 GHz on the magnetoresistance of a high-mobility two-dimensional electron gas has been studied in a GaAs quantum well with AlAs/GaAs superlattice barriers. It has been found that the microwave field induces oscillations of this magnetoresistance, which are periodic in the reciprocal magnetic field (1/B). It has been shown that the period of these oscillations in the frequency range under study depends on the microwave radiation power.     

Transport and ferromagnetism in InGaAs quantum well structures delta-doped with Mn

Samples containing InGaAs quantum wells with p-type conductivity delta-doped by Mn were synthesized and studied. Magnetic moment measurements on a SQUID magnetometer revealed the presence of ferromagnetism at temperatures T from 4.2 to 400 K. Anomalous Hall effect caused by additional sample magnetization was observed at temperatures of from about 30 to 80 K. The Shubnikov-de Haas effect was recorded at 4.2 K. Negative magnetoresistance changed sign for positive at T ≈ 30 K as the temperature increased.     

Crossover from quantum to classical transport

Understanding the crossover from quantum to classical transport has become of fundamental importance not only for technological applications due to the creation of sub-10-nm transistors – an important building block of our modern life – but also for elucidating the role played by quantum mechanics in the evolutionary fitness of biological complexes. This article provides a basic introduction into the nature of charge and energy transport in the quantum and classical regimes. It discusses the characteristic transport properties in both limits and demonstrates how they can be connected through the loss of quantum mechanical coherence. The salient features of the crossover physics are identified, and their importance in opening new transport regimes and in understanding efficient and robust energy transport in biological complexes are demonstrated.     

Separating positive and negative magnetoresistance in organic semiconductor devices

We study the transition between positive and negative organic magnetoresistance (OMAR) in tris-(8 hydroxyquinoline) aluminium (Alq_{3}), in order to identify the elementary mechanisms governing this phenomenon. We show how the sign of OMAR changes as function of the applied voltage and temperature. The transition from negative to positive magnetoresistance (MR) is found to be accompanied by an increase in slope of log(I) versus log(V). ac admittance measurements show this transition coincides with the onset of minority charge (hole) injection in the device. All these observations are consistent with two simultaneous contributions with opposite sign of MR, which may be assigned to holes and electrons having different magnetic field responses.     

Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well

An electro-optical trap for spatially indirect dipolar excitons has been implemented in a GaAs/AlAs Schottky diode with a 400-Å-wide single quantum well. In the presence of a bias voltage applied to a gate, the trap for excitons appears upon ring illumination of the structure by a continuous-wave or pulsed laser generating hot electron-hole pairs in the quantum well. A barrier for excitons collected inside the illuminated ring appears because of the screening of the applied electric field by nonequilibrium carriers directly in the excitation region. Excitons are collected inside the ring owing to the ambipolar drift of carriers and dipole-dipole exciton repulsion in the optical pump region. For dipolar excitons thus collected in the center of the ring electrooptical trap, a significant narrowing of the luminescence line that accompanies an increase in the density of excitations indicates the collective behavior of dipolar excitons.     

Large positive and negative magnetoresistance in armchair phosphorene nanoribbons

We investigate the tunnel magnetoresistance (TMR) in an armchair phosphorene nanoribbon modulated by two ferromagnetic stripes. It is shown that large TMR can be achieved by applying a perpendicularly electric field to the phosphorene plane. We find that the TMR can be adjusted by an external gate voltage, and the TMR oscillates periodically from positive to negative by a slight change of the gate voltage. This characteristic can be observed in a wide region of exchange splitting values. Our findings open the way to design phosphorene-based spintronics nanodevices, and it may contribute to the future low power spintronic applications.     

Unexpected features in the magnetoresistance of a quantum well at room temperature

Well-resolved oscillations are reported in the resistivity of an InGaAs quantum well as a function of applied magnetic field below 1 Tesla. The oscillations are observed at room temperature and their magnetic field position depends on the component of the magnetic field in the plane of the well. Because of these unusual properties, the results cannot be due to bound states within the well but it is suggested that they can be explained by quantised states lying above the well in energy. The condition for the formation of the states is satisfied at lower magnetic fields than for normal Landau levels and the states are separated by larger energy intervals.     

Spin valve effect and negative tunnel magnetoresistance in a quantum dot transistor

We study the spin polarized transport through a quantum dot transistor. It is shown that the interplay of large Coulomb interaction and optically induced spin accumulation gives rise to the spin valve effect over a range of bias. We also find negative tunnel magnetoresistance for system with ferromagnetic electrodes.     

Linear positive magnetoresistance and quantum interference in ferromagnetic metals

Positive, linear in field, and isotropic magnetoresistance in fields up to 60 T is found in geometrically constrained ferromagnets, such as thin films of iron, nickel, and cobalt and their granular mixtures with nonmagnetic materials. The resistivity measured as a function of temperature shows a minimum at temperatures reaching a remarkably high 92 K, followed by logarithmic dependence at low temperatures. We propose to explain both phenomena by a modified version of the quantum electron-electron interaction theory. The agreement is only qualitative while the observed magnitude of the magnetoresistance slope is much larger than the calculated one.