Surface modification of Ni and Co metal nanowires through MeV high energy ion irradiation

Nickel (Ni) and cobalt (Co) metal nanowires were fabricated by using an electrochemical deposition method based on an anodic alumina oxide (Al₂O₃) nanoporous template. The electrolyte consisted of NiSO₄ · 6H₂O and H₃BO₃ in distilled water for the fabrication of Ni nanowires, and of CoSO₄ · 7H₂O with H₃BO₃ in distilled water for the fabrication of the Co ones. From SEM and TEM images, the diameter and length of both the Ni and Co nanowires were measured to be ∼ 200 nm and 5–10 μm, respectively. We observed the oxidation layers in nanometer scale on the surface of the Ni and Co nanowires through HR–TEM images. The 3 MeV Cl²⁺ ions were irradiated onto the Ni and Co nanowires with a dose of 1 × 10¹⁵ ions/cm². The surface morphologies of the pristine and the 3 MeV Cl²⁺ ion-irradiated Ni and Co nanowires were compared by means of SEM, AFM, and HR–TEM experiments. The atomic concentrations of the pristine and the 3 MeV Cl²⁺ ion-irradiated Ni and Co nanowires were investigated through XPS experiments. From the results of the HR–TEM and XPS experiments, we observed that the oxidation layers on the surface of the Ni and Co nanowires were reduced through 3 MeV Cl²⁺ ion irradiation.     

Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

Structure and growth kinetics of the oxidation process of Fe(001) whisker surfaces over a 10-decade pressure range

Fe(001) surfaces of whiskers of good crystalline quality were oxidized in a pressure range from 10^? 7 mbar to 1 bar at different temperatures. Epitaxial Fe₃O₄ and FeO thin films with negligible strain were grown depending on the oxidation temperatures. The kinetics of the oxide thickness growth was measured and compared with the predictions of the Fromhold–Cook theory for oxidation of metals. Some discrepancies were found and a possible explanation is presented.     

High temperature protonic conduction in Sr-doped LaP3O9

Electrical conduction of Sr-doped LaP₃O₉ ([Sr]/{[La] + [Sr]} = 2–10 mol%) was investigated under 0.4–5 kPa of p(H₂O) and 0.01–100 kPa of p(O₂) or 0.3–3 kPa of p(H₂) at 573–973 K. Sr-doped LaP₃O₉ showed apparent H/D isotope effect on conductivity regardless of the Sr-doping level under both H₂O/O₂ oxidizing and H₂/H₂O reducing conditions at investigated temperatures. Conductivities of the material were almost independent of p(O₂) and p(H₂O). These results demonstrated that the Sr-doped LaP₃O₉ exhibited protonic conduction under wide ranges of p(O₂), p(H₂O) and temperature. The conductivity of the Sr-doped LaP₃O₉ increased with increasing Sr concentration up to its solubility limit, ca. 3 mol%, while the further Sr-doping slightly degraded the conductivity. These indicate that Sr²⁺ substitution for La³⁺ leads to proton dissolution into the material and induced protonic conduction. Conductivities of the 3 mol% Sr-doped sample were 2 × 10^- 6–5 × 10^− 4 S cm^− 1 at 573–973 K.     

Measurement of surface resistivity and surface conductivity of anodised aluminium by optical interferometry techniques

Optical interferometry techniques were used for the first time to measure the surface resistivity and surface conductivity of anodised aluminium samples in aqueous solution, without any physical contact. The anodization process (oxidation) of the aluminium samples was carried out in different sulphuric acid solutions (1.0–2.5% H₂SO₄), by the technique of electrochemical impedance spectroscopy (EIS), at room temperature. In the mean time, the real-time holographic interferometric was carried out to measure the thickness of anodised (oxide) film of the aluminium samples during the anodization process. Then, the alternating current (AC) impedance (resistance) of the anodised aluminium samples was determined by the technique of electrochemical impedance spectroscopy (EIS) in different sulphuric acid solutions (1.0–2.5% H₂SO₄) at room temperature. In addition, a mathematical model was derived in order to correlate between the AC impedance (resistance) and to the surface (orthogonal) displacement of the samples in solutions. In other words, a proportionality constant (surface resistivity or surface conductivity=1/surface resistivity) between the determined AC impedance (by EIS technique) and the orthogonal displacement (by the optical interferometry techniques) was obtained. Consequently the surface resistivity (ρ) and surface conductivity (σ) of the aluminium samples in solutions were obtained. Also, electrical resistivity values (ρ) from other source were used for comparison sake with the calculated values of this investigation. This study revealed that the measured values of the resistivity for the anodised aluminium samples were 2.8×10⁹, 7×10¹², 2.5×10¹³, and 1.4×10¹²  Ω cm in 1.0%, 1.5%, 2.0%, and 2.5% H₂SO₄ solutions, respectively. In fact, the determined value range of the resistivity is in a good agreement with the one found in literature for the aluminium oxide, 85% Al₂O₃ (5×10¹⁰ Ω cm in air at temperature 30 °C), 96% Al₂O₃ (1×10¹⁴  Ω cm in air at temperature 30 °C), and 99.7% Al₂O₃ (>1×10¹⁴ Ω cm in air at temperature 30 °C).     

Ionic and electronic conductivities,stability and thermal expansion of La10 − x(Si,Al)6O26 ± δ solid electrolytes

Apatite-type La_10 − xSi_6 − yAl_yO_{27 − 3x/2 − y/2} (x = 0–0.33; y = 0.5–1.5) exhibit predominant oxygen ionic conductivity in a wide range of oxygen partial pressures. The conductivity of silicates containing 26.50–26.75 oxygen atoms per formula unit is comparable to that of gadolinia-doped ceria at 770–870 K. The average thermal expansion coefficients are (8.7–10.8) × 10^− 6 K^− 1 at 373–1273 K. At temperatures above 1100 K, silicon oxide volatilization from the surface layers of apatite ceramics and a moderate degradation of the ionic transport with time are observed under reducing conditions, thus limiting the operation temperature of Si-containing solid electrolytes.     

Enhanced ionization of perpendicularly aligned H2 in intense laser fields

Using three-dimensional classical ensembles, we have investigated the enhancement of double ionization of perpendicularly aligned H₂ molecules by a 800 nm laser pulse with intensity ranging from 1 × 10¹⁴ W/cm² to 6 × 10¹⁴ W/cm². The simulated results show that double ionization probability of H₂ strongly depends on R and reaches a maximum at an intensity independent critical distance R_C ≈ 5 a.u. Furthermore, the enhancement of double ionization is more pronounced in the cases of weaker or stronger fields. These results, a well indication of the influence of molecular structures and laser–molecule interactions on double ionization of diatomic molecules, are analyzed in detail and qualitatively explained based on the field-induced barrier suppression model and back analysis.     

Epitaxial growth of well-ordered ultra-thin Al2O3 film on NiAl (1 1 0) by a single-step oxidation

Well-ordered ultra-thin Al₂O₃ films were grown on NiAl (1 1 0) surface by exposing the sample at various oxygen absorption temperatures ranging from 570 to 1100 K at dose rates 6.6 × 10⁻⁵ and 6.6 × 10⁻⁶ Pa. From the results of low-energy electron diffraction (LEED), Auger electron spectrometer (AES) and X-ray photon spectroscopy (XPS) observations, it was revealed that oxidation mechanism above 770 K is different from well-known two-step process. At high temperature, oxidation and crystallization occurred simultaneously while in two-step process oxidation and crystallization occurred one after another. At high-temperature oxidation well-ordered crystalline oxide can be formed by a single-step without annealing. Well-ordered Al₂O₃ layer with thickness over 1 nm was obtained in oxygen absorption temperature 1070 K and a dose rate 6.6 × 10⁻⁶ Pa at 1200 L oxygen.     

Ultrasound-induced emulsification of subcritical carbon dioxide/water with and without surfactant as a strategy for enhanced mass transport

Pulsed ultrasound was used to disperse a biphasic mixture of CO₂/H₂O in a 1 dm³ high-pressure reactor at 30 °C/80 bar. A view cell positioned in-line with the sonic vessel allowed observation of a turbid emulsion which lasted approximately 30 min after ceasing sonication. Within the ultrasound reactor, simultaneous CO₂-continuous and H₂O-continuous environments were identified. The hydrolysis of benzoyl chloride was employed to show that at similar power intensities, comparable initial rates (1.6 ± 0.3 × 10^–3 s^–1 at 95 W cm^–2) were obtained with those reported for a 87 cm³ reactor (1.8 ± 0.2 × 10^–3 s^–1 at 105 W cm^–2), demonstrating the conservation of the physical effects of ultrasound in high-pressure systems (emulsification induced by the action of acoustic forces near an interface). A comparison of benzoyl chloride hydrolysis rates and benzaldehyde mass transport relative to the non-sonicated, ‘silent’ cases confirmed that the application of ultrasound achieved reaction rates which were over 200 times faster, by reducing the mass transport resistance between CO₂ and H₂O. The versatility of the system was further demonstrated by ultrasound-induced hydrolysis in the presence of the polysorbate surfactant, Tween, which formed a more uniform CO₂/H₂O emulsion that significantly increased benzoyl chloride hydrolysis rates. Finally, pulse rate was employed as a means of slowing down the rate of hydrolysis, further illustrating how ultrasound can be used as a valuable tool for controlling reactions in CO₂/H₂O solvent mixtures.     

Giant magneto-impedance effect in CoMnSiB amorphous microwires

The giant magneto-impedance (GMI) ratio, ΔZ/Z=[(Z(H)−Z(H_max)]/Z(H_max), in a nearly zero magnetostrictive Co_68.5Mn_6.5Si₁₀B₁₅ amorphous microwire has been investigated for the frequency range 0.5–10 MHz, driving current amplitude of 0.5–2.5 mA, bias DC magnetic field up to 2400 A/m and under applied tensile stress up to 132 MPa. A maximum relative change in the GMI ratio up to around 130% is observed at a frequency of 10 MHz, magnetic DC field of about 180 A/m, driving current amplitude of 1 mA and under tension of 60 MPa. The tensile stress dependence of the magnetic field, H_m, corresponding to the maximum ΔZ/Z ratio allows to estimate the magnetostriction constant (λ_s≈−2×10⁻⁷) to be in good agreement with λ_s values estimated by different methods and in amorphous alloys with similar compositions.     

The interaction of H2O molecules with iron films studied with MIES,UPS and XPS

X-Ray Photoelectron Spectroscopy (XPS), Metastable Induced Electron Spectroscopy (MIES) and Ultraviolet Photoelectron Spectroscopy (UPS) were applied to study the interaction of H₂O molecules with iron films.During the interaction with H₂O molecules under ultrahigh vacuum conditions, an oxide film is formed on the iron surface. UPS and XPS still show metallic contributions, even for a surface which is exposed to about 10³ L. The oxide film thickness amounts to about 1.8 nm. No hydroxide formation is observed at all, neither in UPS nor in MIES. Further impinging H₂O molecules do not interact with the surface, because the oxide film inhibits the dissociation of impinging molecules.H₂O exposure beyond 10⁹ L does not lead to a significant increase of the oxide layer, which saturates at a thickness of 1.8 nm. In particular, no surface hydroxide is observed at this exposure. Neither XPS UPS nor MIES reveal any indication for this.     

Improved high resistivity ZnS films on HgCdTe for passivation of infrared devices

We report the results of DC current–voltage characteristics, resistivity and conduction mechanism of 2500 Å thick ZnS films deposited by e-beam evaporation technique for applications of surface passivation in HgCdTe based devices. The typical near zero bias leakage currents were very low and varying from 37 fA to 1.1 pA corresponding to a resistivity variation of 2.2 × 10¹² to 1.0 × 10¹³ ohm cm for the well behaved devices. The films showed typically leakage current densities of under 3 × 10^?9 A/cm² near zero bias. These observations were further analyzed for conduction mechanism results prevailing in our films. As regards current transport, these films showed trends of Ohmic conduction in low electric field strengths, combination of Ohmic conduction and Frenkel–Poole (FP) for medium field strengths and FP conduction for high electric field strengths. All the experimental observations could be fitted very well using the said conduction mechanisms. We have shown that ZnS can continue to be used as passivant for modern high density area arrays based on HgCdTe and in order to further improve the performance of this passivant, one has to reduce FP conduction at high fields of greater than 0.25 MV/cm.     

Improved critical current density in Zn doped YBCO single crystals

Magnetic measurements were made using pure YBCO and Zn doped YBa₂(Cu_1?xZn_x)₃O_7?σ. Single crystals with Zn concentration of 0.5%, 1.5%, 3.0% and 4.3%. The magnetic hysteresis loops for these samples were measured in the temperature range 0.1 ? T/T_c ? 0.96 under magnetic fields of 5 T using SQUID. It was found that the critical current density J_c increased for low Zn content samples up to 3% Zn concentration compared to pure YBCO sample and decreased for the higher Zn content samples. These values varied consistently when compared at magnetic fields of 1 T and 3 T. Moreover Zn doped samples showed significant values of J_c in the temperature range of 0.7–0.9T_c, close to critical temperature compared to pure YBCO sample. The irreversibility field H_irr was also enhanced in this temperature range showing consistent decrease with increase of Zn concentration. The peak field H_p above H_c1 and irreversibility field H_irr, both show power law dependence of the form H = m₁(1 ? T/T_c)^m2 in the temperature range of 0.75–0.96T_c. The values of parameter m₂ increased from 1.44 to 1.95 for the samples up to 3% Zn content and decreased to 1.37 for higher Zn contents. The ratio H_irr/H_p was found to be 3–4 for the lower Zn content samples and was 7–8 for the sample with high Zn content indicating more disorder for higher Zn content samples. The region between peak field H_p and irreversibility field H_irr was broadened with the increase of Zn concentration. The strong effect of Zn substitution in modifying behavior of these samples even at elevated temperatures is possibly due to the changes in the anisotropy of our samples with the increase of Zn concentration and also due to the locally induced changes in magnetic moments by Zn substitution.     

Structural,dielectric and impedance properties of NaCa2V5O15 ceramics

Polycrystalline sample of NaCa₂V₅O₁₅ (NCV) with tungsten bronze structure was prepared by a mixed oxide method at relatively low temperature (i.e. 630 °C). Preliminary structural analysis of the compound showed an orthorhombic crystal structure at room temperature. Microstructural study showed that the grains are uniformly and densely distributed over the surface of the sample. Detailed studies of dielectric properties showed that the compound has dielectric anomaly above the room temperature (i.e. 289 °C), and shows hysteresis in polarization study. The electrical parameters of the compound were studied using complex impedance spectroscopy technique in a wide temperature (23–500 °C) and frequency (10²–10⁶ Hz) ranges. The impedance plots showed only bulk (grain) contributions, and there is a non-Debye type of dielectric dispersion. Complex modulus spectrum confirms the grain contribution only in the compound as observed in the impedance spectrum. The activation energy, calculated from the ac conductivity of the compound, was found to be 0.20–0.30 eV. These values of activation energy suggest that the conduction process is of mixed type (i.e. ionic–polaronic).     

Simulation of dark current suppression in p–i–n InGaAs photodetector with In0.66Ga0.34As/InAs superlattice electron barrier

An InGaAs–based photodetector with different periods of inserting strain–compensated In_0.66Ga_0.34As/InAs superlattice (SL) electron barrier in the In_0.83Ga_0.17As absorption layer has been investigated. The band diagram, electron concentration and electric field intensity of the structure were analyzed with numerical simulation. It was found that the period of SL has a remarkable influence on the properties of the photodetectors. With the decrease of the period of In_0.66Ga_0.34As/InAs SL, the dark current density is suppressed significantly, which is reduced to 2.46 × 10⁻³ A/cm² at 300 K and a reverse bias voltage of 1 V when the period is 2.5 nm.     

Critical properties of superconducting Ba1−xKxFe2As2

Magnetisation and magneto-resistance measurements have been carried out on superconducting Ba_1?xK_xFe₂As₂ samples with x = 0.40 and 0.50. From high field magnetization hysteresis measurements carried out in fields up to 16 T at 4.2 K and 20 K, the critical current density has been evaluated using the Bean critical state model. The J_C determined from the high field data is >10⁴ A/cm² at 4.2 K and 5 T. The superconducting transitions were also measured resistively in increasing applied magnetic fields up to 12 T. From the variation of the T_C onset with applied field, dH_C2/dT at T_C was obtained to be ?7.708 T/K and ?5.57 T/K in the samples with x = 0.40 and 0.50.     

Synthesis,crystal structure,spectroscopic characterization and optical properties of bis(4-acetylanilinium) tetrachlorocobalt (II)

The chemical preparation, crystal structure, spectroscopic investigations and optical features are given for a novel organic–inorganic hybrid material [C₈H₁₀NO]₂CoCl₄.The compound is crystallized in the orthorhombic space group Cmca, with the following unit cell parameters: a=19.461(2) Å, b=15.523(2) Å, c=13.7436(15) Å, and Z=8. The atomic arrangement shows an alternation of organic and inorganic layers along the b-axis. The cohesion between these entities is performed by N–H…Cl and N–H…O hydrogen bonds and π–π stacking interactions.Infrared and Raman spectra at room temperature are recorded in the 4000−400 and 4000−0 cm⁻¹ frequency regions, respectively and analyzed on the basis of literature data. This study confirms the presence of the organic cation [C₈H₁₀NO]⁺ and of the [CoCl₄]²⁻ anion. UV–vis spectroscopy results showed the indirect transition with band gap energy 2.98 eV.     

Mixed conductivity and electrocatalytic performance of SrFeO3-δ–SrAl2O4 composite membranes

Oxygen-ionic and electronic transport in dense (SrFe)_1−x(SrAl₂)_xO_z composites, consisting of strontium-deficient Sr(Fe,Al)O_3-δ and SrAl₂O₄ phases, is determined by the properties of perovskite-like solid solution. Increasing the content of SrAl₂O₄, with a total conductivity as low as 5 × 10^− 7 −  10^− 5 S × cm^− 1 at 973–1273 K in air, results in the gradual decrease of the partial conductivities, but also enables the suppression of thermal expansion. Compared to single-phase SrFe_1−xAl_xO_3-δ, (SrFe)_1−x(SrAl₂)_xO_z composites exhibit enhanced thermomechanical properties, while the oxygen permeability of these materials has similar values. The composite membranes exhibit stable performance under air/(H₂–H₂O–N₂) and air/(CH₄–He) gradients at 973–1173 K. The oxidation of dry methane by oxygen permeating through (SrFe)_0.7(SrAl₂)_0.3O_z results in dominant total oxidation, suggesting the necessity to incorporate a reforming catalyst into the ceramic reactors for natural gas conversion.     

Forming concentric double-emulsion droplets using electric fields

Double-emulsion droplets may be assembled into highly concentric shells using a uniform AC electric field to induce dipole/dipole interactions. The resulting force centers the inner droplet with respect to the outer shell if the outer droplet has a higher dielectric constant than the ambient, suspending liquid. The dielectric constant of the inner droplet does not influence this condition. Applying an electric field >10⁴ V_rms/m achieves centering of approximately 3–6 mm diameter droplets suspended in ～10 centipoise liquids within ～60 s. If the outer shell is electrically conductive, the effect depends strongly on frequency. In the case of the monomer-containing liquids requisite to forming foam shells for laser target fabrication, the electrical field frequency must be ～10 MHz or higher. Because of very stringent requirements imposed on the concentricity and sphericity of laser targets, electric field induced droplet distortion must be minimized. Consequently, the liquid constituents must be matched in density to ～0.1%.