Optimization of InAs/GaAs quantum-dot structures and application to 1.3-μm mode-locked laser diodes

The self-assembled growth of InAs/GaAs quantum dots by molecular beam epitaxy is conducted by optimizing several growth parameters, using a one-step interruption method after island formation. The dependence of photoluminescence on areal quantum-dot density is systematically investigated as a function of InAs deposition, growth temperature and arsenic pressure. The results of this investigation along with time-resolved photoluminescence measurements show that the com- bination of a growth temperature of 490℃, with a deposition rate of 0.02 ML/s, under an arsenic pressure of 1×10^-6 Torr （1 Torr = 1.33322×10^2 Pa）, provides the best compromise between high density and the photoluminescence of quantum dot structure, with a radiative lifetime of 780 ps. The applicability of this 5-layer quantum dot structure to high-repetition-rate pulsed lasers is demonstrated with the fabrication and characterization of a monolithic InAs/GaAs quantum-dot passively mode-locked laser operating at nearly 1300 nm. Picosecond pulse generation is achieved from a two-section laser, with a 19.7-GHz repetition rate.     

1.5 μm dual-lateral-mode distributed Bragg reflector laser for terahertz excitation

A terahertz excitation source based on a dual-lateral-mode distributed Bragg reflector(DBR) laser working in the 1.5 μm range is experimentally demonstrated. By optimizing the width of the ridge waveguide, the fundamental and the first-order lateral modes are obtained from the laser. The mode spacing between the two modes is9.68 nm, corresponding to a beat signal of 1.21 THz. By tuning the bias currents of the phase and DBR sections,the wavelengths of the two modes can be tuned by 2 nm, with a small strength difference(5 dB) and a large side-mode suppression ratio(SMSR 45 dB).     

Thermal simulation of InP-based 1.3 μm vertical cavity surface emitting laser with AsSb-based DBRs

In this paper, the thermal analysis of double-intracavity tunnel-junction vertical cavity surface emitting laser is theoretically performed using simulation software PICS3D which self-consistently combines 3D simulation of carrier transport, self-heating and optical wave-guiding. Excellent agreement between simulation and measurement is obtained by careful adjustment of material parameter in model. The temperature distribution of the device is obtained at 20 °C and 6o °C stage temperature. Quantum well maximum temperature for operating device is in very good agreement with experimental results.Simulation results show that Joule heating is the main heat source in device. Vertical electron escape into Separate Confinement Heterostructure causes thermal power roll-off. Self-heating and optical reductions are the triggering mechanisms behind the leakage current. Laser design variations are shown to allow a significant increase in the maximum output power. This optimized structure can also enhance the stimulated recombination rate and decrease the Auger recombination rate.     

Single-frequency distributed Bragg reflector Tm:YAG ceramic derived all-glass fiber laser at 1.95 μm

A 135 mW single-frequency distributed Bragg reflector fiber laser at 1.95 μm was obtained based on a Tm:YAG ceramic-derived all-glass fiber. The fiber laser achieved an optical signal-to-noise ratio of ～ 77 dB. Moreover, the threshold and linewidth of the single-frequency laser were measured to be 15.4 mW and 4.5 kHz, respectively. In addition, the measured relative intensity noise was less than -140 dB· Hz^-1 at frequencies of over 10 MHz. The results show that the as-drawn Tm:YAG ceramic-derived all-glass fiber is highly promising for ～ 2 μm single-frequency fiber laser applications.     

1.3-μm uncooled 10 Gb/s directly modulated MQW AlGaInAs/InP laser diodes

The recent increase of information traffic demands op- tical communication system to operate at 10 Gb/s and above even for local area networks (LAN) and metropoli- tan area networks (MAN). An uncooled high-speed di- rectly modulated laser is a key component for these net- work applications, which is used in optical transceivers in order to reduce cost, size, and power consumption. The key for the high-speed directly modulated lasers is to increase the relaxation oscillation frequency as well…     

A method to obtain ground state electroluminescence from 1.3μm emitting InAs/GaAs quantum dots grown by molecular beam epitaxy

1.3μm emitting InAs/GaAs quantum dots(QDs) have been grown by molecular beam epitaxy and QD light emitting diodes(LEDs) have been fabricated.In the electroluminescence spectra of QD LEDs,two clear peaks corresponding to the ground state emission and the excited state emission are observed.It was found that the ground state emission could be achieved by increasing the number of QDs contained in the active region because of the state filling effect.This work demonstrates a way to control and tune the emitting wavelength of QD LEDs and lasers.     

A 10Gb/s Directly-Modulated 1.3μm InAs/GaAs Quantum-Dot Laser

We demonstrate 10 Gb/s directly-modulated 1.3 μm InAs quantum-dot （QD） lasers grown on GaAs substrates by molecular beam epitaxy. The active region of the QD lasers consists of five-stacked InAs QD layers. Ridge-waveguide lasers with a ridge width of 4 μm and a cavity length of 600 μm are fabricated with standard lithography and wet etching techniques. It is found that the lasers emit at 1293 nm with a very low threshold current of 5 mA at room temperature. Furthermore, clear eye-opening patterns under 10 Gb/s modulation rate at temperatures of up to 50oC are achieved by the QD lasers. The results presented here have important implications for realizing low-cost, low-power-consumption, and high-speed light sources for next-generation communication systems.     

Influences of quantum noises on direct-modulated properties of 1.3-μm InGaAsP/InP laser diodes

Due to the zero dispersion point at 1.3μm in optical fibres, 1.3-μm InGaAsP/InP laser diodes have become main light sources in fibre communication systems recently. Influences of quantum noises on direct-modulated properties of single-mode 1.3-μm InGaAsP/InP laser diodes are investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the direct-modulated single-mode laser system are calculated using the linear approximation method. We find that the stochastic resonance (SR) always appears in the dependence of the SNR on the bias current density, and is strongly affected by the cross-correlation coefficient between the carrier and photon noises, the frequency of modulation signal, and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated InGaAsP/InP laser diodes and improve the quality of optical fibre communication systems.     

1.3-μm InGaAsP planar buried heterostructure laser diodes with AlInAs electron stopper layer

This study reports on the realization of 1.3-μm InGaAsP buried-heterostructure (BH) laser diodes (LDs) via an Fe-doped semi-insulating InP layer and an AlInAs electron stopper layer (ESL). Experimentally, the as-cleaved BH LD with an AlInAs ESL exhibited improved characteristics in terms of threshold current, slope efficiency, and maximum light output power at 90 °C as compared to those of the normal BH LD without an AlInAs ESL. In addition, high internal quantum efficiency or reduced threshold current density was observed, indicating increased modal gain in BH LDs fabricated with an AlInAs epilayer on top of the active region. It was also found that the temperature sensitivity of the BH LDs with an AlInAs ESL is more stable than that of the normal BH LDs. These results could be attributed to the suppression of thermal carrier leakage out of strain-compensated multiple-quantum-well by a large conduction-band offset of the AlInAs/InGaAsP heterojunction. Otherwise, without consideration of damping factor or coupling loss, the 3-dB bandwidth of the proposed BH LDs reaches a high value of 15.3 GHz. Finally, this TO-can packaged BH LD shows an eye-opening feature with the extinction ratio of 7.49 dB while operating at 10 Gbit/s at 50 mA.     

Electro-optic low-voltage InGaAs/GaAs multiple quantum well modulator with organic–inorganic distributed Bragg reflector

We have realized a reflection-type electro-optic InGaAs/GaAs multiple quantum well (MQW) modulator using an organic–inorganic distributed Bragg reflector (DBR). The MQW active layer is embedded in the intrinsic region of a p-i-n diode. The DBR consists of few pairs of CF_x/TiO_xlayers, fabricated by room-temperature ion beam sputtering on the rear side of the device. The reflectivity of the mirror approaches 98% in the infrared spectral region and is centered at then = 1 exciton resonance of the MQW. ON–OFF driving reverse voltages of 0.5 and 1.8 V are measured at room temperature. In this range the static response of the device is linear so that it can be used for analog electro-optic modulation.     

Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light–current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5×10⁸ W/m². The hysteresis-type loop can be removed through the LD “run-in” procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere. PACS 42.55.Px; 42.70.Hj     

1.3-μm InAs/GaAs quantum dots grown on Si substrates

We compare the effect of InGaAs/GaAs strained-layer superlattice(SLS) with that of GaAs thick buffer layer(TBL)serving as a dislocation filter layer. The InGaAs/GaAs SLS is found to be more effective than GaAs TBL in blocking the propagation of threading dislocations, which are generated at the interface between the GaAs buffer layer and the Si substrate. Through testing and analysis, we conclude that the weaker photoluminescence for quantum dots(QDs) on Si substrate is caused by the quality of capping In_(0.15)Ga_(0.85)As and upper GaAs. We also find that the periodic misfits at the interface are related to the initial stress release of GaAs islands, which guarantees that the upper layers are stress-free.     

Quadratic nonlinear response to 1.56-μm continuous wave laser in semi-insulating GaAs

The nonlinear photoresponse to a 1.56μm infrared continuous wave laser in semi-insulating （SI） galliu- marsenide （GaAs） is examined. The double-frequency absorption （DFA） is responsible for the nonlinear photoresponse based on the quadratic dependence of the photocurrent separately on the coupled optical power and bias voltage. The electric field-induced DFA remarkably affects the native DFA in SI GaAs. The surface electric field or the surface band-bending of SI GaAs significantly affects the magnitude variation of the Dhotocurrent and dark current     

1.55-μm InGaAs/InGaAlAs MQW vertical-cavity surface-emitting lasers with InGaAlAs/InP distributed Bragg reflectors

High-performance InGaAs/InGaAlAs multiple-quantum-well vertical-cavity surface-emitting lasers (VCSELs) with InGaAlAs/InP distributed Bragg reflectors are proposed for operation at the wavelength of . The lasers have good heat diffusion characteristic, large index contrast in DBRs, and weak temperature sensitivity. They could be fabricated either by metal-organic chemical vapor deposition (MOCVD) or by molecular beam epitaxy (MBE) growth. The laser light-current characteristics indicate that a suitable reflectivity of the DBR on the light output side in a laser makes its output power increase greatly and its lasing threshold current reduce significantly, and that a small VCSEL could output the power around its maximum for the output mirror at the reflectivity varying in a broader range than a large VCSEL does.     

2-μm high-power multiple-frequency single-mode Q-switched Ho:YLF laser for DIAL application

We report on the development and the demonstration of a two-wavelength single-frequency laser oscillator based on Ho:YLF crystal. This laser is especially suitable for application as a transmitter in differential absorption lidar (DIAL)/integrated path differential absorption (IPDA) measurements of atmospheric carbon dioxide (CO₂) using the R30 CO₂ absorption line at 2,050.967 nm. The oscillator consists in a fiber-coupled and free-space solid-state hybrid system and can be used in high-energy middle-rate or moderate-energy high-rate configurations. The latter produced On and Off sequentially single-frequency laser pulses with 13 mJ of energy at a repetition rate of 2 kHz and pulse duration of 42 ns. The pulse energy and frequency stabilities are specially documented in free-running, single-frequency and two-frequency seeding single-mode operations. Standard deviation is 7.7 % for pulse energy and 2 MHz for frequency stability for the two-wavelength seeding operation. Allan variance plot shows that frequency fluctuations are reduced below 70 kHz for 10 s of averaging which is suitable for accurate CO₂ DIAL or IPDA measurements.     

Tuning vertically stacked InAs/GaAs quantum dot properties under spacer thickness effects for 1.3 μm emission

Coherent InAs islands separated by GaAs spacer (d) layers are shown to exhibit self-organized growth along the vertical direction. A vertically stacked layer structure is useful for controlling the size distribution of quantum dots. The thickness of the GaAs spacer has been varied to study its influence on the structural and optical properties. The structural and optical properties of multilayer InAs/GaAs quantum dots (QDs) have been investigated by atomic force microscopy (AFM), transmission electron microscopy (TEM), and photoluminescence (PL) measurements. The PL full width at half maximum (FWHM), reflecting the size distribution of the QDs, was found to reach a minimum for an inter-dots GaAs spacer layer thickness of 30 monolayers (ML). For the optimized structure, the TEM image shows that multilayer QDs align vertically in stacks with no observation of apparent structural defects. Furthermore, AFM images showed an improvement of the size uniformity of the QDs in the last layer of QDs with respect to the first one. The effect of growth interruption on the optical properties of the optimized sample (E30) was investigated by PL. The observed red shift is attributed to the evolution of the InAs islands during the growth interruption. We show the possibility of increasing the size of the QDs approaching the strategically important 1.3 m wavelength range (at room temperature) with growth interruption after InAs QD deposition.     

Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-μm quantum dot lasers

Systematic investigation of InAs quantum dot(QD) growth using molecular beam epitaxy has been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the InAs/GaAs quantum dots.By optimizing the growth rate, high quality InAs/GaAs quantum dots have been achieved.The areal quantum dot density is 5.9× 10~(10) cm~(-2), almost double the conventional density(3.0 × 1010 cm~(-2)).Meanwhile, the linewidth is reduced to 29 meV at room temperature without changing the areal dot density.These improved QDs are of great significance for fabricating high performance quantum dot lasers on various substrates.     

High Characteristic Temperature 1.3μm InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy

We report the molecular beam epitaxy growth of 1.3 μm InAs/GaAs quantum-dot （QD） lasers with high characteristic temperature T0. The active region of the lasers consists of five-layer InAs QDs with p-type modulation doping. Devices with a stripe width of 4 μm and a cavity length of 1200 μm are fabricated and tested in the pulsed regime under different temperatures. It is found that T0 of the QD lasers is as high as 532 K in the temperature range from 10°C to 60°C. In addition, the aging test for the lasers under continuous wave operation at 100°C for 72 h shows almost no degradation, indicating the high crystal quality of the devices.     

Antimonide-based lasers and DFB laser diodes in the 2–2.7 μm wavelength range for absorption spectroscopy

We report on Fabry–Pérot semiconductor lasers and single frequency distributed feedback lasers based on GaInAsSb/AlGaAsSb quantum wells. The laser structures were grown by molecular beam epitaxy on GaSb substrates. The devices were etched either by wet process or by inductively coupled plasma (ICP) process. Electron-beam lithography was used to deposit a metal Bragg grating on each side of the laser ridge to fabricate the DFB lasers. The devices all operate in the continuous wave regime at room temperature with a single frequency emission above 2.6 μm and good tuning properties, making them well adapted to tunable diode laser absorption spectroscopy. PACS 42.55.Px; 42.62.Fi     

A novel 2-μm pulsed fiber laser based on a supercontinuum source and its application to mid-infrared supercontinuum generation

A new method to achieve 2-μm pulsed fiber lasers based on a supercontinuum(SC) is demonstrated. The incident pump light is a pulsed SC which contains a pump light and a signal light at the same time. The initial signal of the seed laser is provided by the incident pump light and amplified in the cavity. Based on this, we obtain a 2-μm pulsed laser with pulse repetition rate of 50 kHz and pulse width of 2 ns from the Tm-doped fiber laser. This 2-μm pulsed laser is amplified by two stages of fiber amplifiers, then the amplified laser is used for mid-infrared(mid-IR) SC generation in a 10-m length of ZrF4–BaF2–LaF3–AlF3–NaF(ZBLAN) fiber. An all-fiber-integrated mid-IR SC with spectrum ranging from 1.8 μm to4.3 μm is achieved. The maximal average output power of the mid-IR SC from the ZBLAN fiber is 1.24 W(average output power beyond 2.5 μm is 340 mW), corresponding to an output efficiency of 6.6% with respect to the 790-nm pump power.