Investigation of gas sensor based on In2O3:Ga2O3 film

We have fabricated a LPG and butane sensor whose sensitive element is a nanosize In₂O₃:Ga₂O₃ (96:4 weight %) film covered with a thin palladium catalytic layer. Technology of deposition of these films on a glassceramic substrate by the method of rf magnetron sputtering was elaborated. The surfaces of fabricated films were studied with use of a scanning electron microscope and the thickness of films was measured. The sensitivity of sensors based on the glassceramic/In₂O₃:Ga₂O₃ (96:4 weight %)/Pd structure depending on the thickness and sizes of film grains was studied. We revealed technological regimes of sputtering providing fabrication of films with the best parameters.     

Sr and Ga substituted Ba2In2O5: Linking ionic conductivity and the potential energy surface

We study in detail the potential energy surface of Ga and Sr substituted Ba₂In₂O₅ by considering the changes in the relative energies of the local structures of Ba₂In₂O₅ when replacing 1 / 8th of the indium atoms with gallium or 1 / 8th of the barium atoms with strontium. The calculations are subsequently used to interpret the increase in ionic conductivity of cubic Ba₂In₂O₅ when strontium is substituted for barium and the decrease in ionic conductivity when gallium is substituted for indium. The effects of replacing 1 / 8th of the indium atoms with gallium or 1 / 8th of the barium atoms with strontium are significant and affect considerably the relative stability of the different low energy local structures present for Ba₂In₂O₅. While a higher density of low energy structures is observed for Ba_1.75Sr_0.25In₂O₅ than for Ba₂In₂O₅, the opposite occurs for Ba₂In_1.75Ga_0.25O₅. This observation supports our main hypothesis: a high density of low energy local structures is a prerequisite for high ionic conductivity.     

Enhanced acetone gas sensing performance of the multiple-networked Fe2O3-functionalized In2O3 nanowire sensor

In₂O₃ nanowires functionalized with Fe₂O₃ nanoparticles were synthesized by the thermal evaporation of In₂S₃ powders in an oxidizing atmosphere followed by the solvothermal deposition of Fe₂O₃ and their acetone gas sensing properties were examined. The pristine and Fe₂O₃-functionalized In₂O₃ nanowires exhibited responses of 141–390% and 298–960%, respectively, to 10–500 ppm acetone at 200 °C. The Fe₂O₃-functionalized In₂O₃ nanowire sensor showed stronger electrical response to acetone gas at 200 °C than the pristine In₂O₃ nanowire counterpart. The former showed more rapid response but slower recovery than the latter. Both the pristine and Fe₂O₃-functionalized In₂O₃ nanowire sensors showed the strongest response to acetone gas at 200 °C. The underlying mechanism for the enhanced sensing performance of the Fe₂O₃-functionalized In₂O₃ nanowire sensor towards acetone gas is discussed.     

Structure and ultrafast ethanol sensing properties of In2O3-capped Zn-doped Fe2O3 nanorods

This paper reports the facile synthesis of In₂O₃-capped Zn-doped Fe₂O₃ nanorods along with their ethanol gas sensing properties. A two-stage process involving thermal oxidation of Fe foils and Zn powders in air and the sputter-deposition of In₂O₃ was used to synthesize these nanostructures. The nanorods synthesized using this method were ∼5 μm in length and 50–120 nm in diameter with a shell layer thickness of 10–15 nm. The multiple-networked In₂O₃-capped Zn-doped Fe₂O₃ nanorod sensor showed a significantly enhanced and ultrafast response to ethanol gas. The enhanced sensing performance was explained by modulation of the potential barrier height and the strong catalytic activity of In₂O₃ for ethanol oxidation.     

Engineering of AlON interlayer in Al2O3/AlON/In0.53Ga0.47As gate stacks by thermal atomic layer deposition

The presence of an AlN interfacial layer in high-k/In_0.53Ga_0.47As gate stacks improves the interfacial properties and enhances the electrical performance of devices. However, pure AlN is rarely grown by atomic layer deposition (ALD) because of the low reactivity of NH₃ toward the common Al-precursor and the predisposition to oxidation of the grown AlN layer. Although a plasma-enhanced ALD technique significantly suppresses the oxygen content in the grown AlN layer, the deterioration of the interface properties by plasma-damage is a critical issue. In this work, an AlON interlayer was engineered by optimizing the NH₃ feeding time in thermal ALD to improve the interface quality in Al₂O₃/AlON/In_0.53Ga_0.47As capacitors. It was determined that a mere increase in the NH₃ feeding time during the ALD of the AlON film resulted in a higher nitrogen incorporation into the AlON interlayer, leading to a reduction in the interface trap density. Furthermore, the out-diffusion of elements from the In_0.53Ga_0.47As layer was effectively suppressed by increasing the NH₃ feeding time. This work demonstrates that simple process optimization can improve the interface quality in high-k/In_0.53Ga_0.47As gate stacks without the use of any plasma-activated nitrogen source.     

Highly transparent Ag doped In2O3 electrodes with high work function for organic solar cells

We report highly transparent Ag-doped In₂O₃ (IAO) films with high work function for use as transparent anodes in organic solar cells (OSCs). The electrical, optical, structural, and morphological properties of IAO films and their work function were investigated as a function of the rapid thermal annealing (RTA) temperature. At an RTA temperature of 600 °C, the IAO film showed a sheet resistance of 23.12 Ohm/square, an optical transmittance of 79.28%, and a work function of 5.21 eV, similar to conventional Sn-doped In₂O₃ (ITO) films. The low resistivity of the IAO film was closely related to oxygen vacancies caused by Ag suboxide formation in the In₂O₃ matrix. A bulk-heterojunction OSC with the optimized IAO anode showed performance comparable to that of an OSC with a reference ITO anode, indicating that the IAO films is a promising anode material for use in OSCs.     

Structure and NO2 gas sensing properties of SnO2-core/In2O3-shell nanobelts

SnO₂-core/In₂O₃-shell nanobelts were fabricated by a two-step process comprising thermal evaporation of Sn powders and sputter-deposition of In₂O₃. Transmission electron microscopy and X-ray diffraction analyses revealed that the core of a typical core–shell nanobelt comprised a simple tetragonal-structured single crystal SnO₂ and that the shell comprised an amorphous In₂O₃. Multiple networked SnO₂-core/In₂O₃-shell nanobelt sensors showed the response of 5.35% at a NO₂ concentration of 10 ppm at 300 °C. This response value is more than three times larger than that of bare-SnO₂ nanobelt sensors at the same NO₂ concentration. The enhancement in the sensitivity of SnO₂ nanobelts to NO₂ gas by sheathing the nanobelts with In₂O₃ can be accounted for by the modulation of electron transport by the In₂O₃–In₂O₃ homojunction.     

Synthesis and characterization of a Ni/Ba2In0.6Ti1.4O5.7□0.3 cermet for SOFC application

Ni-based cermets were prepared and reduced from mixtures of NiO and Ba₂In_0.6Ti_1.4O_5.7□_0.3. A cermet containing 18.7 vol.% of Ni exhibits promising characteristics: 40% of open porosity and a lower DC resistivity than a Ni/YSZ cermet with a larger Ni content (30 vol.%). Its thermal expansion coefficient is 11.4 × 10^− 6 K^− 1 whereas that measured for Ba₂In_0.6Ti_1.4O_5.7□_0.3 is 9.9 × 10^− 6 K^− 1. Electrical measurements vs. the Ni content have shown that the percolation threshold corresponds to 15.7 vol.% of Ni. By using saccharose as a pore former, the porosity of the electrode can be tuned. It is shown that the pore size is controlled by the particle size distribution of the pore former.     

Timing characteristics of the scintillation response of Gd3Al2Ga3O12:Ce and Gd3Al2.6Ga2.4O12:Ce single crystal scintillators

The timing characteristics of scintillation response of Czochralski-grown Gd₃Al₂Ga₃O₁₂:Ce and Gd₃Al_2.6Ga_2.4O₁₂:Ce single crystals were compared. The photoelectron yield, scintillation decay times, and coincidence time resolution were measured. At 662 keV γ-rays, the photoelectron yield of 6200 phe MeV⁻¹ obtained for Gd₃Al₂Ga₃O₁₂:Ce is higher than that of 4970 phe MeV⁻¹ obtained for Gd₃Al_2.6Ga_2.4O₁₂:Ce, while an inferior energy resolution of the former (7.2% vs. 5.6%) is observed. Scintillation decays are approximated by sum of exponentials with the dominant fast component decay time and its relative intensity of 89 ns (73%) for Gd₃Al₂Ga₃O₁₂:Ce and 136 ns (69%) for Gd₃Al_2.6Ga_2.4O₁₂:Ce. The coincidence time resolution obtained for Gd₃Al₂Ga₃O₁₂:Ce is superior than that of Gd₃Al_2.6Ga_2.4O₁₂:Ce. The normalized time resolution was also discussed in terms of a number of photoelectrons and decay characteristics of the light pulse.     

Effect of switching ultrasonic amplitude in preparing a hybrid of fullerene (C60) and gallium oxide (Ga2O3)

In this study, we proposed ‘switching ultrasonic amplitude’ as a new strategy of applying ultrasonic energy to prepare a hybrid of buckminsterfullerene (C₆₀) and gallium oxide (Ga₂O₃), C₆₀/Ga₂O₃. In the proposed method, we switched the ultrasonic amplitude from 25% to 50% (by 5% amplitude per 10 min, within 1 h of ultrasonic irradiation) for the sonochemical treatment of a heterogeneous aqueous mixture of C₆₀ and Ga₂O₃ by a probe-type ultrasonic horn operating at 20 kHz. We found that compared to the conventional techniques associated with high amplitude oriented ultrasonic preparation of functional materials, switching ultrasonic amplitude can better perform in preparing C₆₀/Ga₂O₃ with respect to avoiding titanium (Ti) as an impurity generating from the tip erosion of a probe-type ultrasonic horn during high amplitude ultrasonic irradiation in an aqueous medium. Based on SEM/EDX analysis, the quantity of Ti (wt.%) in C₆₀/Ga₂O₃ prepared by the proposed technique of switching ultrasonic amplitude was found to be 1.7% less than that prepared at 50% amplitude of ultrasonic irradiation. The particles of C₆₀/Ga₂O₃ prepared by different modes of amplitude formed large (2–12 μm) aggregates in their solid phase.Whereas, in the aqueous medium, they were found to disperse in their nano sizes. The minimum particle size of the as-synthesized C₆₀/Ga₂O₃ in an aqueous medium prepared by the proposed method of switching ultrasonic amplitude reached to approximately 467 nm. Comparatively, the minimum particle sizes were approximately 658 nm and 144 nm, using 25% and 50% amplitude, respectively. Additionally, Ga₂O₃ went under hydration during ultrasonic irradiation. Moreover, due to the electron cloud interference from C₆₀ in the hybrid structure of C₆₀/Ga₂O₃, the vibrational modes of Ga₂O₃ were Raman inactive in C₆₀/Ga₂O₃.     

Transparent conducting Sn-doped Ga1.4In0.6O3 films prepared on α-Al2O3 (0 0 0 1) by MOCVD

Sn-doped Ga_1.4In_0.6O₃ films have been prepared on α-Al₂O₃ (0 0 0 1) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The Sn-doping was varied from 0% to 7% (atomic ratio). Polycrystalline films with resistivity of 4.9 × 10⁻³Ω cm, carrier concentration of 5.9 × 10¹⁹ cm⁻³ and Hall mobility of 21.4 cm² v⁻¹ s⁻¹ was obtained at 5 at.% of Sn concentration. The average transmittance for the Sn-doped Ga_1.4In_0.6O₃ films in the visible range was over 90%. The bandgap of the films varies from 3.85 to 4.21 eV.     

Morphological,photovoltaic, and electron transport properties of In2O3-based DSSC with different concentrations of MWCNTs

This study focuses on the influence of loading MWCNTs in In₂O₃-based DSSCs. In₂O₃-MWCNTs were prepared by sol-gel method via spin coating technique and annealed at 450 °C. The structural, morphology, and electrical properties of the photoanodes were characterized by means of XRD, AFM and FESEM, and J-V curve measurement and EIS properties, respectively. Incorporation of MWCNTs in In₂O₃ improved the J _sc and V _oc of the cell. However, excess loading of MWCNTs in In₂O₃ caused a serious aggregation of MWCNTs that increased the recombination rate. Thus, In₂O₃-MWCNTs with 0.3 % of MWCNTs achieved the highest PCE of 1.23 % with large surface area for efficient dye adsorption. Moreover, In₂O₃-MWCNTs_(0.3%) exhibited large D _eff about 25.7 × 10⁻³ cm² s⁻¹ with low recombination effect that increased the PCE. This study suggests an optimum MWCNT incorporation of 0.3 % in the photoanode by sol-gel synthesis method of developing In₂O₃-based nanocomposite.

     

Room temperature photoluminescence property of Mo-doped In2O3 thin films

Mo-doped In₂O₃ thin films have been prepared on glass substrates using an activated reactive evaporation method and systematically studied the effect of oxygen partial pressure on the structural, optical, electrical and photoluminescence properties of the films. The obtained films are highly transparent and conductive. The films exhibited the lowest electrical resistivity of 5.2 × 10⁻⁴ Ω cm, with an average optical transmittance of 90% in the visible region. An intensive photoluminescence emission peaks were observed at 415 and 440 nm.     

Large-area In2O3 ordered pore arrays and their photoluminescence properties

Large-area In₂O₃ ordered pore arrays were prepared on glass and silicon substrates by the sol–gel technique based on colloidal monolayer spheres. The morphologies of such arrays are determined by precursor concentration used and colloidal sphere size, and are thus controllable. It has been shown that the formed ordered pore arrays consist of In₂O₃ polycrystallites. The photoluminescence measurement of the In₂O₃ ordered pore arrays shows that there is a strong photoluminescence band in the blue-green region centered around 465 nm, which does not exist in the bulk materials. Further experiments reveal that this peak originates from the oxygen deficiencies in In₂O₃ skeletons. This polydomain ordered pore-structured array could be of great potential for Si-based integrated nanophotonics and optoelectronic devices of the next generation, in addition to new gas sensors. PACS  01.30.-y; 78.20.-e; 78.55.-m; 78.55.Et     

Synthesis of βGa2O3 nanowires by an MOCVD approach

We have synthesized monoclinic gallium oxide (βGa₂O₃) nanowires on Au-coated Si substrates by a reaction of a trimethylgallium and oxygen mixture. The βGa₂O₃ nanowires became progressively thinner from bottom to top, with diameters ranging from 10 to 200 nm and lengths of several micrometers. We found that Au-containing nanoparticles were attached to the tips of the βGa₂O₃ nanowires and thus the nanowire growth could be a vapor–liquid–solid process .PACS 81.07.-b; 81.15.Gh     

Synthesis,structural characterization and electrical property of new oxide ion conductors: La3MMo2O12 (M = In,Ga and Al)

New series of oxides, La₃MMo₂O₁₂ (M = In, Ga and Al), have been prepared by the solid-state reaction. The composition and elemental distribution were analyzed by the energy-dispersive X-ray (EDX) analysis. As determined by the X-ray diffraction (XRD), these compounds have similar crystal structures that can be indexed on a monoclinic cell at room temperature. AC impedance spectra and the DC electrical conductivity measurements in various atmospheres indicate that they are oxide ion conductors with ionic conductivities between 10^− 2 and 10^− 3 S/cm at 800 °C. The conductivity decreases in the order of La₃GaMo₂O₁₂ > La₃AlMo₂O₁₂ > La₃InMo₂O₁₂, implying that the effect of cell volume and polarization associated with In³⁺, Ga³⁺ and Al³⁺ play an important role in the anion transport of these materials. The reversible phase transition was observed in all these compounds as confirmed by the differential thermal analysis (DTA) and dilatometric measurements.     

Synthesis of monodisperse In2O3 nanoparticles and their d0 ferromagnetism

Monodisperse indium oxide (In₂O₃) nanoparticles (NPs) with the average diameter of 11 nm were prepared by a solvothermal method. The In₂O₃ NPs were characterized by X-ray diffraction, Raman and transmission electron microscopy. The intrinsic nature of ferromagnetism in In₂O₃ NPs has been established with the experimental observation of magnetic hysteresis loop. Photoluminescence and UV–visible studies were employed to evidence the presence of oxygen vacancies and revealed that the oxygen vacancies contribute to the ferromagnetism. The origin of ferromagnetism in In₂O₃ NPs may be due to exchange interactions among localized electron spin moments resulting from oxygen vacancies.     

Synthesis and luminescence properties of Er3+-doped Lu3Ga5O12 nanocrystals

The concentration-dependent luminescence properties of sol–gel-derived nanocrystalline Lu_3(1?x)Er_3xGa₅O₁₂ powders (where x=0.01, 0.05 and 0.1) have been studied. Laser-excited luminescence spectra, emission decays and upconversion luminescence of Er³⁺-doped Lu₃Ga₅O₁₂ nanocrystalline samples have been measured. The decay curve of the (²H_11/2,⁴S_3/2) emission exhibits a non-exponential behavior presumably due to cross-relaxation process. Moreover, near-infrared to visible upconversion luminescence has been observed in the green region for 1.0 mol% Er³⁺ ions in Lu₃Ga₅O₁₂ nanocrystals upon 815 nm excitation. The power dependence of the anti-Stokes luminescence suggests that upconversion is probably achieved through the sequential absorption of two photons. To the best of our knowledge, this is the first report on the preparation and optical properties of Er³⁺-doped Lu₃Ga₅O₁₂ in the form of nanocrystalline powders.     

Synthesis of GaP nanowires with Ga2O3 coating

Zinc-blende-type face centred cubic structure GaP nanowires with Ga₂O₃ coating were synthesized by heating Ga₂O₃ and red phosphorus powder with the assistance of NH₃ and Ar at 1323 K. The GaP/Ga₂O₃ nanowires have a uniform size distribution with diameters ranging from tens of nm to hundreds of nm and lengths up to several micrometres. The inner GaP nanowires have almost a single-crystal structure with twin defects and have the 111 direction as preferential growth direction. Outer Ga₂O₃ layers were polycrystalline and acted as a protection layer for the inner GaP nanowires to permit their use at high temperature. The GaP/Ga₂O₃ structure may have potential applications in future nanodevice design. PACS 81.07.Bc; 81.16.Pr     

Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

The structural and electronic properties of group III rich In_0.53Ga_0.47As(001) have been studied using scanning tunneling microscopy/spectroscopy (STM/STS). At room temperature (300 K), STM images show that the In_0.53Ga_0.47As(001)–(4 × 2) reconstruction is comprised of undimerized In/Ga atoms in the top layer. Quantitative comparison of the In_0.53Ga_0.47As(001)–(4 × 2) and InAs(001)–(4 × 2) shows the reconstructions are almost identical, but In_0.53Ga_0.47As(001)–(4 × 2) has at least a 4× higher surface defect density even on the best samples. At low temperature (77 K), STM images show that the most probable In_0.53Ga_0.47As(001) reconstruction is comprised of one In/Ga dimer and two undimerized In/Ga atoms in the top layer in a double (4 × 2) unit cell. Density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. DFT molecular dynamics (MD) show the row dimer formation and breaking is facilitated by the very large motions of tricoodinated row edge As atoms and z motion of In/Ga row atoms induced changes in As–In/Ga–As bond angles at elevated temperature. STS results show there is a surface dipole or the pinning states near the valence band (VB) for 300 K In_0.53Ga_0.47As(001)–(4 × 2) surface consistent with DFT calculations. DFT calculations of the band-decomposed charge density indicate that the strained unbuckled trough dimers being responsible for the surface pinning.