Coverage effects on the adsorption of sulfur on Co(0 0 0 1): A DFT study

The adsorption of sulfur on Co(0 0 0 1) was studied using density functional theory calculations at coverage from 0.11 ML to 1.0 ML. Calculated results indicate that atomic S favors in hollow sites with bond S–Co dominated at lower coverage and at higher coverage the strong adsorbate S–S interaction leads to the formation of S₂ species. It was shown that the adsorption energy generally increases (gets weaker) with the coverage in a near linear fashion for the most stable configurations. In addition, modification of the surface electronic properties has been discussed and some discrepancy are found between our calculations and the findings of O adsorption on Au(1 1 1) and Pt(1 1 1) surfaces.     

Growth and characterization of CoSi2 films on Si (1 0 0) substrates

In the present work, a special solid phase epitaxy method has been adapted for the preparation of CoSi₂ film. This method includes an epitaxial growth of Co films on Si (1 0 0) substrate, and in situ annealing of the Co/Si films in vacuum. It has been found that at the substrate temperature of 360°C, fcc cobalt film grows epitaxially on the Si (1 0 0) surface. The crystallographic orientation relations between fcc Co film and Si substrate determined from the electron diffraction result are: (0 0 1) Co//(0 0 1) Si, [1 0 0] Co//[1 1 0]Si. Upon annealing at temperatures range from 500 to 600°C, Co film reacts with Si substrate and transforms into CoSi₂. The CoSi₂ films prepared by this way are characterized by XTEM, XPS and AFM.     

Observation of hydrogen adsorption on 6H-SiC(0 0 0 1) surface

We have used coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) to investigate the adsorption of atomic hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface. It has been found that the saturation coverage of hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface is about 1.7 ML. Upon saturated adsorption of atomic hydrogen, the √3×√3 surface structure changes to the 1×1 structure. The data of the CAICISS measurements have indicated that as a result of the hydrogen adsorption, Si adatoms on the √3×√3 surface move from T₄ to on-top sites.     

The formation of sub-10 nm nanohole array on block copolymer thin films on gold surface using surface neutralization based on O2 plasma treatment and self-assembled monolayer

Blockcopolymer (BCP) lithography is an emerging nanolithography technique for fabrications of various nanoscale devices and materials. In this study, self-assembled BCP thin films having cylindrical nanoholes were prepared on gold by surface neutralization using self-assembled monolayer (SAM). Oxygen plasma treatment was investigated as a way to enhance the functionality of Au surface toward SAM formation. After surface neutralization, well-ordered nanoholes with 9 to 20 nm diameters were formed inside BCP thin films on Au surfaces through microphase separation. The effects of oxygen plasma treatment on the formation of BCP nanopattern were investigated using surface analysis techniques including X-ray photoelectron spectroscopy (XPS) and water contact angle measurement. Au nanodot arrays were fabricated on gold film by utilizing the BCP nanotemplate and investigated by atomic force microscopy (AFM).     

Interaction of atomic H and CO with Cu(1 1 0) and bimetallic Ni/Cu(1 1 0)

Co-adsorption of hydrogen and CO on Cu(1 1 0) and on a bimetallic Ni/Cu(1 1 0) surface was studied by thermal desorption spectroscopy. Hydrogen was exposed in atomic form as generated in a hot tungsten tube. The Ni/Cu surface alloy was prepared by physical vapor deposition of nickel. It turned out that extended exposure of atomic hydrogen leads not only to adsorption at surface and sub-surface sites, but also to a roughening of the Cu(1 1 0) surface, which results in a decrease of the desorption temperature for surface hydrogen. Exposure of a CO saturated Cu(1 1 0) surface to atomic H leads to a removal of the more strongly bonded on-top CO (α₁ peak) only, whereas the more weakly adsorbed CO molecules in the pseudo threefold hollow sites (α₂ peak) are hardly influenced. No reaction between CO and H could be observed. The modification of the Cu(1 1 0) surface with Ni has a strong influence on CO adsorption, leading to three new, distinct desorption peaks, but has little influence on hydrogen desorption. Co-adsorption of H and CO on the Ni/Cu(1 1 0) bimetallic surface leads to desorption of CO and H₂ in the same temperature regime, but again no reaction between the two species is observed.     

Potential-induced structure transitions in self-assembled monolayers: II. Propanethiol on Au(1 0 0)

The structure of propanethiol self-assembled monolayers (SAMs) on Au(1 0 0) in 0.1 M H₂SO₄ has been investigated as a function of electrode potential by in situ scanning tunnelling microscopy (STM). These studies reveal a potential-induced, reversible transition between an in essence quadratic and a distorted hexagonal structure. We suggest that a thiolate-driven surface reconstruction, similar to Au(1 0 0)-(hex), is responsible for the hexagonal SAM structure, whereas the quadratic one refers to the unreconstructed substrate.     

Electronic charge transfer between Au nano-particles and TiO2-terminated SrTiO3(0 0 1) substrate

The interaction between Au nano-particles and oxide supports is recently discussed in terms of the catalytic activities. This paper reports the electronic charge transfer between Au nano-particles and TiO₂-terminated SrTiO₃(0 0 1) substrate, which is compared with that for stoichiometric(S)-, pseudo-stoichiometric(S¹)- and reduced(R)-TiO₂(1 1 0) supports. We observed the photoelectron spectra of Au 4f, O 2s, Ti 3p, and Sr 4p lines and also measured the work functions for Au/oxides supports using synchrotron-radiation light. As the results, all the O 2s, Ti 3p, and Sr 4p lines for Au/SrTiO₃(0 0 1) show lower binding energy shifts in a quite same manner and abrupt increase in the work function is seen in an initial stage. This clearly evidences an electronic charge transfer from the substrate to Au probably due to a much larger work function of Au than SrTiO₃(0 0 1), which leads to an upward band bending (0.3 eV) just like a Schottky contact. Electronic charge transfers also take place at Au/S- and Au/S¹-TiO₂(1 1 0) and Au/R-TiO₂(1 1 0) interfaces, where electrons are transferred from Au to S- and S¹-TiO₂ and from R-TiO₂ to Au, as predicted by ab initio calculations.     

Entropy-driven adsorption of carbon nanotubes on (0 0 1) and (1 1 1) surfaces of CeO2 islands grown on sapphire substrate

According to the aim to compose combinatorial material by adsorption of carbon nanotubes onto the structured CeO₂ surface the interaction of the armchair (5,5) and zigzag (8,0) nanotubes with the (0 0 1) and (1 1 1) surfaces of CeO₂ islands have been investigated by theoretical methods. The thermodynamics of the adsorption were studied at the low surface coverage region. The interaction energy between the nanotube and the different CeO₂ surfaces shows significant increase when the size of the interface reaches 7–8 unit cells of CeO₂ and it remains unchanged in the larger interface region. However, the entropy term of the adsorption is significantly high when the distances of CeO₂ islands are equal to 27 nm (adsorption of armchair (5,5) nanotube) or 32 nm (adsorption of zigzag (8,0) nanotube). This property supports adsorption of nanotubes onto CeO₂ surfaces which possesses a very specific surface morphology. A long-wave vibration of nanotubes was identified as background of this unexpected phenomenon. This observation could be applicable in the development of such procedures where the nanotube adsorption parallel to the surface is aimed to perform.     

Structural and dynamical properties of Ru(0 0 0 1) surface

I performed density functional theory (DFT) calculations combined with MD simulations to study the structural relaxation of Ru(0001) surface. The surface relaxation of the topmost layer is found to be about ?4% at absolute zero temperature. Using MD simulations in the temperatures range of 50 K and 900 K, the effect is found to be minor on the surface relaxation as compared to Pd (1 1 1) clean surface. The effect of surface vibration is also investigated using a LEED code and shows no effect of the vibrational level on the IV curves, which rules out any disagreement between proper theory and LEED results of well prepared surfaces.     

Preparation and characterization of Fe3O4(1 1 1) nanoparticles and thin films on Au(1 1 1)

Fe₃O₄ nanoparticles and thin films were prepared on the Au(1 1 1) surface and characterized using X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM). Fe₃O₄ was formed by annealing α-Fe₂O₃(0 0 0 1) structures on Au(1 1 1) at 750 K in ultrahigh vacuum (UHV) for 60 min. Transformation of the α-Fe₂O₃(0 0 0 1) structures into Fe₃O₄ nanoparticles and thin films was supported by XPS. STM images show that during the growth procedure used, Fe₃O₄ initially appears as nanoparticles at low coverages, and forms thin films at ～2 monolayer equivalents (MLE) of iron. Two types of ordered superstructures were observed on the Fe₃O₄ particles with periodicities of ～50 and ～42 Å, respectively. As the Fe₃O₄ particles form more continuous films, the ～50 Å feature was the predominant superstructure observed. The Fe₃O₄ structures at all coverages show a hexagonal unit cell with a ～3 Å periodicity in the atomically resolved STM images.     

Improved electrical parameters of vacuum annealed Ni/4H-SiC (0 0 0 1) Schottky barrier diode

The reported work has been focused on the improvement of electrical parameters of Schottky diode using vacuum annealing at mild temperature in Ar gas ambient. Nickel Schottky barrier diodes were fabricated on 50 μm epitaxial layer of n-type 4H-SiC (0 0 0 1) substrate. The values of leakage current, Schottky barrier height (?_B), ideality factor (η) and density of interface states (N_SS) were obtained from experimentally measured current–voltage (I–V) and capacitance–voltage (C–V) characteristics before and after vacuum annealing treatment. The data revealed that ?_B, η and reverse leakage current for the as-processed diodes are 1.25 eV, 1.6 and 1.2 nA (at ?100 V), respectively, while for vacuum annealed diodes these parameters are 1.36 eV, 1.3 and 900 pA (at same reverse voltage). Improved characteristics have been resulted under the influence of vacuum annealing because of lesser number of minority carrier generation due to incessant reduction of number of available discrete energy levels in the bandgap of 4H-SiC substrate and lesser number of interface states density at Ni/4H-SiC (0 0 0 1) interface.     

Surface vibrational thermodynamics from ab initio calculations for fcc(1 0 0)

We present vibrational dynamics and thermodynamics for the (1 0 0) surfaces of Cu, Ag, Pd, Pt and Au using a real space approach. The force field for these systems is described by density functional theory. The changes in the vibrational dynamics and thermodynamics from those in bulk are confined mostly to the first-layer. A substantial enhancement of the low-frequency end of the acoustic branch was found and is related to a loosening of the bond at the surface. The thermodynamics of the first-layer also show significant differences (higher heat capacity, lower free energy and higher mean vibrational square amplitudes) from what obtains in bulk. Comparing these results with those calculated using embedded-atom method potentials, we discovered that for Ag(1 0 0) and Cu(1 0 0), the two methods yield very similar results while for Pd(1 0 0), Pt(1 0 0) and Au(1 0 0) there are substantial differences.     

Ellipsometric detection of GaAs(0 0 1) surface hydrogenation in H2 atmosphere

Optical properties of MBE-grown GaAs(0 0 1) surfaces have been studied by spectroscopic ellipsometry under dynamic conditions of ramp heating and cooling after desorption of passivating As-cap-layer with low pressure H₂ atmosphere (14 Torr) applied to the surface. The temperature dependence of GaAs pseudo-dielectric function with atomically smooth (0 0 1) surface carrying the fixed Ga-rich (4 × 2) reconstruction was obtained for the temperature range of 160–600 °C. It is shown ellipsometrically that GaAs(0 0 1) heating in the molecular hydrogen atmosphere results in the formation of hydrogenated layer on the surface.     

AFM study of a SiC film grown on Si(1 0 0) surface using a C2H4 beam

A 3C-silicon carbide (SiC) thin film grown on a Si(1 0 0) surface using an ethylene (C₂H₄) molecular beam has been studied by atomic force microscopy. At the center of the irradiation area of the ethylene beam, the shape of the SiC islands was rectangular, the average length of which was 74.5 nm and the average height was 13.1 nm. Each SiC island consists of the SiC particles with the average diameter of 17 nm. Just inside of the boundary region of the beam irradiation, the average size and height of the islands decreased to 50.1 and 8.2 nm, respectively. Just outside of the boundary region, the average size and height decreased to 17.7 and 5.1 nm, respectively. The average reaction probabilities at the above three points were estimated to be 0.14, 0.27 and 2.7%, respectively. New growth mode of the crystal growth is proposed (particles gathering island mode).     

Submicron gold structures formed by atomic force microscopy lithography on thin films of poly(methyl methacrylate)

Thin films of poly(methyl methacrylate) (PMMA) (25 nm) deposited on gold coated glass substrates have been locally modified by exposure to biased atomic force microscopy (AFM) tips. Constant exposure currents in the range of 0.5–0.65 nA leads to removal of PMMA both by direct ablation and enhanced solubility in a developer solution. Possible mechanisms causing such modifications have been discussed. Submicron Au structures were formed by combining AFM lithography, involving localized removal of PMMA, with sputter deposition of gold and a lift-off process.     

Adsorption of ZnO, (ZnO)2 and (ZnO)3 on MgO(0 0 1)

We have investigated the adsorption of ZnO, atomic Zn, atomic O and (ZnO)_n on the flat MgO(0 0 1) surface by means of density functional calculations. A single ZnO molecule prefers to bind in a position parallel to the surface with the zinc atom above a surface oxygen atom and the oxygen above a magnesium atom. Adsorption of a pair of ZnO molecules leads to the formation of (ZnO)₂ on the surface with geometric parameters slightly distorted from those of the free molecule, providing an indication of surface interaction with the adsorbate. Finally, the trimer forms on the surface with the same general shape as the gas phase trimer, but with angular distortions influenced by surface-molecule interactions. The effects of increasing surface coverage are also explored.     

Cu dimer diffusion on strained Cu(0 0 1)

Cu dimer diffusion energy barrier on strained Cu(0 0 1) surfaces has been studied with nudged elastic band method (NEB) and embedded atom method (EAM). Dimer exchange and hopping mechanisms are chosen as the initial diffusion paths in the NEB method. It is shown here that the dimer exchange is dominant on tensile surfaces and the dimer hopping is dominant on compressive surfaces. For most strain conditions Cu dimer diffusion energy barrier is lower than Cu monomer diffusion barrier. The concerted movement of the remaining adatom toward the hopping adatom lowers the dimer hopping barrier. The adsorption induced relaxation makes the dimer exchange barriers lower than the monomer exchange barriers on tensile surfaces. Transition state theory is used to calculate the diffusion frequencies as a function of temperature. No surface crowdion is observed on the shear strained surfaces for the dimer diffusion.     

Surface structure and morphology of InAs(1 1 1)B with/without gold nanoparticles annealed under arsenic or atomic hydrogen flux

We have investigated the structure and morphology of the InAs(1 1 1)B surface using Low Energy Electron Diffraction (LEED), Scanning Tunneling Microscopy (STM) and Scanning Electron Microscopy (SEM). The surface was prepared by annealing in the presence of an arsenic or atomic hydrogen pressure. A (2 × 2) reconstruction that changes into a (1 × 1) unreconstructed surface after prolonged annealing was observed irrespective of preparation method, while the surface morphology was distinctly different in the two cases. Detailed atomic scale models are proposed to explain the behavior. Deposition of Au aerosol nanoparticles on the sample prior to annealing was found to have no effect on the surface reconstruction. The Au particles were found to sink into the surface.     

Near-surface stresses in silicon(0 0 1)

We report here on a detailed atomistic stress analysis of the near-surface stresses on the 2 × 1 surface reconstruction on Si(0 0 1). We find that the surface stresses are spatially periodic with fairly large amplitude. We additionally investigate the stresses in the neighborhood of an S_A-type step.     

Adsorption of Xe atoms on the TiO2(1 1 0) surface: A density functional study

The interaction of xenon atoms with the TiO₂(1 1 0) surface of rutile has been studied by density functional theory methods. Five different possible adsorption sites on the relaxed and clean TiO₂(1 1 0) surface and on two different type of oxygen vacancies possible on this oxide substrate have been considered. In the case of the defect-free substrate, and when compared with a previous study concerning the adsorption of Ar atoms also on TiO₂(1 1 0), the xenon atom, as a larger and easier polarizable species, is shown to have a deeper physisorption well, as expected. Likewise, Xe atoms prefer to be bounded to positions nearby the outermost titanium atoms as found previously for Ar. This is in agreement with most studies concerning rare gases adsorbed on transition metal surfaces. In the case of the reduced surfaces, it is found that the interaction is more favourable in the protruding rows. The interaction is dominated by dispersion forces and DFT + dispersion energies are 3.5–5 times larger than the non-corrected DFT values and Xe-surface distances are smaller. Finally, an interesting correlation is obtained for the calculated interaction energies and the Xe–Ti distance.