Structural and electronic properties of group III Rich In0.53Ga0.47As(001)

The structural and electronic properties of group III rich In_0.53Ga_0.47As(001) have been studied using scanning tunneling microscopy/spectroscopy (STM/STS). At room temperature (300 K), STM images show that the In_0.53Ga_0.47As(001)–(4 × 2) reconstruction is comprised of undimerized In/Ga atoms in the top layer. Quantitative comparison of the In_0.53Ga_0.47As(001)–(4 × 2) and InAs(001)–(4 × 2) shows the reconstructions are almost identical, but In_0.53Ga_0.47As(001)–(4 × 2) has at least a 4× higher surface defect density even on the best samples. At low temperature (77 K), STM images show that the most probable In_0.53Ga_0.47As(001) reconstruction is comprised of one In/Ga dimer and two undimerized In/Ga atoms in the top layer in a double (4 × 2) unit cell. Density functional theory (DFT) simulations at elevated temperature are consistent with the experimentally observed 300 K structure being a thermal superposition of three structures. DFT molecular dynamics (MD) show the row dimer formation and breaking is facilitated by the very large motions of tricoodinated row edge As atoms and z motion of In/Ga row atoms induced changes in As–In/Ga–As bond angles at elevated temperature. STS results show there is a surface dipole or the pinning states near the valence band (VB) for 300 K In_0.53Ga_0.47As(001)–(4 × 2) surface consistent with DFT calculations. DFT calculations of the band-decomposed charge density indicate that the strained unbuckled trough dimers being responsible for the surface pinning.     

Pt-chain induced formation of Ge nanowires on the Ge(001) surface

A new reconstructed Pt/Ge(001)–4 × 2 surface structure of 0.25 ML Pt deposition is suggested based on density functional theory. The Ge dimers form nanowire arrays on a Pt-chain modified Ge(001) surface in which the chain is located between the two quasi-dimer rows and below the Ge nanowire. The simulated scanning tunneling microscope (STM) images of the surface are in excellent agreement with the previously observed STM features and sample bias dependence. It is the nanowire Ge dimers and not the Pt atoms that contribute to the STM images for occupied states at high sample biases, contrary to what has always been assumed in experiments. The surface bands of the Pt chain and quasi-dimer rows exhibit quasi-one-dimensional metallic behavior in the direction of the nanowire. When changing from the 4 × 2 to the 4 × 4 structure, there are likely pseudogaps opened at the new surface Brillouin zone boundary, which simultaneously reduce the metallicity. This may be related to the Peierls instability. The interaction between the Pt chain and the quasi-dimer row, as well as the inter-quasi-dimer row interaction, is of essential importance for stabilization.     

STM and HREELS investigation of gas phase silanization on hydroxylated Si(100)

The gas phase anhydrous reaction of glycidoxypropyldimethylethoxysilane (GPDMES) with a model hydroxylated surface has been investigated using high-resolution electron energy loss spectroscopy (HREELS) and scanning tunneling microscopy (STM). Water dissociation on the clean reconstructed (2 × 1)-Si(100) surface was used to create an atomically flat surface with ~ 0.5 ML of hydroxyl groups. Exposure of this surface to GPDMES at room temperature under vacuum was found to lead to formation of covalent Si–O–Si bonds although high exposures (6 × 10⁸ L) were required for saturation. STM images at the early stages of reaction indicate that the reaction occurs randomly on the surface with no apparent clustering. The STM images together with semi-empirical (AM1) calculations provide evidence for hydrogen bonding interactions between the oxygen atoms in the molecule and surface hydroxyl groups at low coverage.     

Hydrogen chemisorption on Si(111)√ 3×√ 3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy

Atomic H chemisorption on the Si(111)√ 3×√ 3R30^°-B surface has been studied by thermal desorption spectroscopy (TDS) and scanning tunneling microscopy (STM). The B-modified Si surface is known to be inert towards adsorbates, since the surface dangling bonds of Si adatoms are passivated by B atoms sitting in sub-surface sites. However, it was found that even on a perfectly passivated surface, H is adsorbed on the surface by destroying the original √ 3 × √ 3 structure. STM observations revealed that H exposure led to the creation of defects at surface sites, and H was subsequently adsorbed as Si-monohydride at these sites. H exposure also caused cluster island formation at the top surface. The islands are composed of hydrogenated amorphous Si atoms or B-hydrogen complexes.     

Plasma nitridation of Ge(100) surface studied by scanning tunneling microscopy

The geometric and electronic structures of the surface species on Ge(100) after plasma nitridation were investigated in this study. An electron cyclotron resonance (ECR) plasma source was used to directly nitride Ge(100), and scanning tunneling microscopy and spectroscopy (STM/STS) were employed to study the structures of the nitrided surface. Nitridation at room temperature generated a large diversity of adsorbate sites on the surface containing N, O, and displaced Ge atoms, differentiated by annealing between 200 °C and 450 °C. Conversely, nitridation at 500 °C produced Ge–N adsorbate sites which formed ordered and disordered structures on the surface free from oxygen. Density functional theory (DFT) simulations were performed focusing on the ordered nitride structure, and the simulated surface structure showed a good correspondence with the STM data. DFT calculations also found an increase of density of states near the Fermi level on the ordered nitride structure, which is consistent with the Fermi level pinning observed in the STS results. The DFT results predict H-passivation can unpin the Fermi level of the nitrided surface by reducing the dangling bonds and the bond strain, but the residual plasma damage and the low nitridation rate in UHV are challenges to obtain complementary experimental results.     

Study of the TiSi interface formed by Ti deposition on a clean Si (100) surface: A periodic DFT study

A periodic Density Functional Theory (DFT) study using Generalized Gradient Approximation (GGA) of the Ti deposition on a clean Si (100) surface was carried out. The results indicate that Ti adsorbs preferentially on two Si dimers forming polar covalent bonds with four Si atoms. The analysis of the Density of states (DOS) indicates that Ti 3d orbitals hybridize with the surface orbitals near the Fermi level and each Ti atom transfers one electron to the surface even at concentration of 6.8 × 10¹⁴ Ti atom cm^? 2. At this concentration, a quite stable TiSi monolayer is formed and subsequent additions of Ti atoms would initiate metallic Ti growth on the TiSi interface.     

Oxidation of ultra-thin zinc films on Rh(100) surface

The oxidation of submonolayer zinc films on Rh(100) surface by O₂ gas has been studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). With a zinc coverage of 0.8 ML, an atomically flat ultra-thin zinc oxide film formed at an oxygen partial pressure of 2 × 10^? 8 mbar and a temperature of 150 °C. The zinc oxide film showed a c(16 × 2) LEED pattern. The high resolution STM image of the zinc oxide film showed single dotted spots and double dotted spots arranged linearly and periodically along the [01¯1] direction. We propose an atomic arrangement model of the film accounting for the LEED pattern, the STM image, and the atomic arrangement of the bulk ZnO(0001) surface.     

3C-SiC(001)-3 × 2 reconstructed surface analyzed by high-resolution medium energy ion scattering

The atomic structure of the 3C-SiC(001)-3 × 2 reconstructed surface was analyzed precisely by high-resolution medium energy ion scattering (MEIS). The present MEIS analysis unambiguously shows that the (3 × 2) surface consists of Si adatoms (1/3 ML, 1 ML = 1.05 × 10¹⁵ atoms/cm²) on top and underlying Si adlayer (2/3 ML) on the bulk truncated Si plane. As the result, the most probable structure is focused on the Two Adlayer Asymmetric Dimer Model predicted by ab initio calculations and the modified versions with alternating long and short dimers in the 2nd adlayer proposed by photoelectron diffraction (PED) and by grazing incidence X-ray diffraction (GIXRD) analyses. Observed MEIS spectra are well reproduced by the structure relatively close to that determined by PED rather than GIXRD. Interestingly, the first principle calculations using VASP (Vienna ab initio simulation package) prefer symmetric dimers in the second Si adlayer and non-relaxed interplanar distance between the top Si and 2nd C plane of the bulk-truncated surface, which are, however, unable to reproduce the observed MEIS spectra. The distorted 2nd adlayer (asymmetric dimers) may correlate with the compressed interplanar distance between the underlying Si and C planes.     

Initial stage of CdTe on Si(1 0 0) grown by MBE

The initial stage of CdTe growth on silicon has been investigated using angle-resolved photoemission and scanning tunneling microscopy (STM). In order to study initial stage of CdTe on Si, we have desorbed CdTe by annealing at 600 °C so that only one monolayer of Te remains on the Si(1 0 0) substrate. Te/Si(1 0 0)2×1 superstructure has been observed by LEED. Photoemission spectra indicate that Te atoms bond with the Si dangling bond. Atomically resolved STM images reveal that the Te atoms form dimers. It is observed that buckling direction of Te-dimer changes and the dimmers are broken in the site of some dimmer rows. It can be explained that the large lattice mismatch cause the switching of the buckling direction and the breaking of Te-dimer resulted surface relaxation.     

Vacancy diffusion in the Cu(001) surface I: an STM study

We have used the indium/copper surface alloy to study the dynamics of surface vacancies on the Cu(0 0 1) surface. Individual indium atoms that are embedded within the first layer of the crystal, are used as probes to detect the rapid diffusion of surface vacancies. STM measurements show that these indium atoms make multi-lattice-spacing jumps separated by long time intervals. Temperature dependent waiting time distributions show that the creation and diffusion of thermal vacancies form an Arrhenius type process with individual long jumps being caused by one vacancy only. The length of the long jumps is shown to depend on the specific location of the indium atom and is directly related to the lifetime of vacancies at these sites on the surface. This observation is used to expose the role of step edges as emitting and absorbing boundaries for vacancies.     

Reactivity of the Cu2O(1 0 0) surface: Insights from first principles calculations

We present a summary of results of systematic first principles calculations of the electronic and geometric structures of the Cu₂O(1 0 0) surface and the process of CO oxidation on this surface (energetics and pathways of adsorption, diffusion and reactions of CO and O₂ on the surface). The (p, T) phase diagram of the Cu₂O(1 0 0) in equilibrium of with gas phase O₂ built using the ab initio thermodynamics approach suggests that the O-terminated surface is preferred over the Cu-terminated one within the entire ranges of pressures and temperatures in which the compound exists. Metastable Cu-terminated Cu₂O(1 0 0) is found to undergo a surface reconstruction in agreement with experiment. We find CO to oxidize spontaneously on the O-terminated Cu₂O(1 0 0) surface by consuming surface O atoms. Our calculations also show that the surface O-vacancies left in the course of the CO oxidation can be easily filled with dissociative adsorption of the gas phase O₂ molecules, which are usually present in reaction environment.     

Tin-stabilized (1 × 2) and (1 × 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy,photoelectron spectroscopy,and ab initio calculations

Tin (Sn) induced (1 × 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn–III dimers. Furthermore, a new Sn-induced (1 × 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 × 2) reconstruction, and it is shown that the (1 × 4) reconstruction is stabilized as the adatom size increases.     

Formation and its mechanism of copper metal layers at surface by annealing in reduced atmosphere in CuO–Li2O–Nb2O5–SiO2 glass

A trace amount (0.5 mol%) of CuO-doped 40Li₂O–32Nb₂O₅–28SiO₂ glass (mol%) exhibits the formation of copper metal layers at the glass surface by annealing at temperatures (530 °C) below the glass transition temperature (544 °C) in the reduced atmosphere of 7% H₂–93%Ar. The coordination state of copper ions is examined from optical absorption and Fourier transform infrared (FT-IR) spectrum measurements, indicating the formation of Si–OH and Si–H bonds due to the diffusion of hydrogen into the inside of the glass and the reduction of Cu⁺ and Cu²⁺ ions. The mechanism of the formation of copper metals at the surface is proposed, in which the key points are the reduction of Cu²⁺ to Cu⁺ ions due to the hydrogen and the migration of Cu⁺ ions in the interior of the glass to the surface. The first finding on copper metal layers at the glass surface might have a potential for practical applications such as electrodes in glass.     

Interplay between metal-free phthalocyanine molecules and Au(110) substrates

Metal-free phthalocyanine (Pc) molecules adsorbed on the Au(110) surface have been studied both experimentally (STM, LEED) and with density functional calculations. A strong interaction between substrate and adsorbate is observed. On the one hand, a clear template effect of the anisotropic substrate is observed: already at low coverages, the Pc molecules adsorb in various typical row patterns. On the other hand, the molecular adsorption modifies the substrate: at coverages higher than 0.25 monolayers, the usual (1 × 2) reconstruction is converted to a (1 × 3) reconstruction. First principle DFT calculations yield adsorption geometries that agree with the measured STM images and adsorption energies in the range of 2–3 eV. The adsorption leads to covalent and van der Waals interactions between adsorbate and substrate and is accompanied by a considerable charge transfer.     

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2 × 1: Tensile stress induced by substrate chain structures

By combined investigation of STM and synchrotron PES on Ge/Si(5 5 12)-2 × 1 at 530 °C, it has been found that, in addition to the upward-relaxed surface Si atoms, a subsurface Si atom is also readily replaced by an arriving Ge atom at the initial adsorption stage. Such enhanced interdiffusion is due to a unique character of one-dimensional chain structures of the reconstructed substrate, such as π-bonded and honeycomb chains not existing on other low-index Si surfaces such as Si(001)-c(4 × 2) and Si(111)-7 × 7, applying a tensile surface stress to the neighbouring subsurface atoms. Interdiffusion of Ge having lower surface energy induces adsorption of the displaced Si atoms on the surface to form sawtooth-like facets composed of (113)/(335) and (113)/(112) with arriving Ge atoms until the surface is filled with those facets. Such displacive adsorption is the origin of high Si concentration of formed facets.     

Measurement of the sputter yield after mild ion erosion of a pristine Cu(001) surface

Using the STM technique we have determined the sputter yield on a pristine Cu(001) surface after mild (fluence less than 0.044 ions per surface atom) bombardment of the pristine surface with 800 eV Ar⁺ions at normal incidence. The experiments have been performed at substrate temperatures ranging from 200 to 350 K. Making use of the positional correlation of adatoms and surface vacancies, at 200 K and 325 K, we concluded that about 1/3 of the surface adatoms originate from interstitials arriving at the surface and they give a direct indication of the buried bulk vacancies. A careful analysis of the different areas for surface vacancies and adatom then allowed a quantitative evaluation of the sputter yield at 1.2 Cu atoms per 800 eV Ar⁺ ion.     

Novel nanostructuring of the O/Cu(110) surface by reaction to oxygen

We present a scanning tunneling microscopy (STM) study of the reactivity to oxygen of the O/Cu(110) surface nanostructured with alternating oxidized and clean Cu stripes leading to novel nanostructuring by troughs made of missing top-most Cu atoms. The copper atoms extracted from these troughs are participating to the added-row reconstruction of the surface. The oxidation of the nanostructured surface proceeds by enlargement of the oxidized stripes and by oxidation of the troughs until the surface is fully covered by oxygen. At saturation, the trough arrangement, templated by the oxygen-free stripes, led to a novel nanostructure of the O/Cu(110) surface made of the (2 × 1) phase only.A limited influence of the step density was found as the nanostructuration blocks almost all the primary sources of copper atoms at the step edges. In this case, the troughs became the spare source feeding the reconstruction. Careful analysis of the trough distribution in the vicinity of step edges and on terraces shows clear indication of an anisotropic diffusion of the copper adatoms at the surface.     

Type B epitaxy of Ge on CaF2(111) surface

It was known experimentally that type B orientation, which is rotated 180° about the [111] axis, dominated the heteroepitaxial growth of Ge(111) on a CaF₂(111) substrate at an elevated temperature. We performed first principles calculations using density functional theory to determine the energetics of the Ge(111)/CaF₂(111) interface and found that the type B orientation of the Ge film is most likely a result of a direct bonding between Ge atoms and Ca²⁺ at the CaF₂ surface with the top F^? layer depleted. Our theoretical prediction is supported by our X-ray diffraction experiments on {111} < 121> biaxially textured Ge/CaF₂ samples.     

Investigation of the structural and dynamical properties of the (0 0 1) surface of LiCu2O2

We report on studies of the structure and dynamics of the (0 0 1) surface of single crystal LiCu₂O₂, investigated by He beam scattering at room temperature, and with lattice-dynamical models. The best fit surface corrugation to measured diffraction patterns shows that the surface termination is exclusively a Li¹⁺Cu²⁺O^2? plane. Lattice dynamics fits to inelastic He scattering spectra reveal the presence of two low-lying surface phonon modes, identified with the motion of Cu²⁺, Li¹⁺ surface ions normal to the surface.     

The structure of Cu{100}-p(2 × 6)-2mg-Sn studied by DFT and LEED

Low Energy Electron Diffraction (LEED) and Density Functional Theory (DFT) have been used to analyse the structure of Cu{100}-p(2 × 6)-2mg-Sn at room temperature. In this work we found that the favoured geometry for this 0.33 ML Cu{100}-Sn phase is a combination of an overlayer structure and a surface alloy; two Sn atoms are alloyed in to the first copper layer and the other two Sn atoms adsorb at off symmetry hollow sites. In order to relieve the stress in the alloyed layer, the alloyed Sn atoms are buckled 0.59/0.45 ± 0.2 Å (DFT/LEED) above the centre of mass of the first layer copper atoms.