Femtosecond laser processing of indium-tin-oxide thin films

Micro- and nano-scale crystalline indium-tin-oxide (c-ITO) patterns fabricated from amorphous ITO (a-ITO) thin films on a glass substrate using a (low NA 0.26) femtosecond laser pulse that is not tightly focused are demonstrated. Different types of c-ITO patterns are obtained by controlling the laser pulse energies and pulse repetition rate of a femtosecond laser beam at a wavelength of 1064 nm: periodic micro c-ITO dots with diameters of ~1.4 μm, two parallel c-ITO patterns with/without periodic-like glass nanostructures at a laser scanning path and nano-scale c-ITO line patterns with a line width ~900 nm, i.e. ~1/8 of the focused beam׳s diameter (7 μm at 1/e²).     

Variety of nanostructures induced by femtosecond laser pulses on surface of Au/Cr film stack

Several nanostructures were obtained after irradiation with femtosecond laser pulse (130 fs, 800 nm, 1 kHz pulse repetition frequency) on Au/Cr film stack. The influence of laser parameters such as fluence (0.5 J/cm², 1.5 J/cm², 3 J/cm²) and the number of pulse were investigated. With single pulse irradiation, the nanoline and nonoparticle were obtained for the pulse fluence of 0.5 J/cm² and 3 J/cm², respectively. The formation mechanism of those nanostructures was discussed. The results of this experiment demonstrate that different kinds of nanostructures could be formed by varying the laser parameters such as fluence and the number of pulse.     

Ablation depth control with 40 nm resolution on ITO thin films using a square,flat top beam shaped femtosecond NIR laser

We reported on the ablation depth control with a resolution of 40 nm on indium tin oxide (ITO) thin film using a square beam shaped femtosecond (190 fs) laser (λ_p=1030 nm). A slit is used to make the square, flat top beam shaped from the Gaussian spatial profile of the femtosecond laser. An ablation depth of 40 nm was obtained using the single pulse irradiation at a peak intensity of 2.8 TW/cm². The morphologies of the ablated area were characterized using an optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS). Ablations with square and rectangular types with various sizes were demonstrated on ITO thin film using slits with varying x–y axes. The stereo structure of the ablation with the depth resolution of approximately 40 nm was also fabricated successfully using the irradiation of single pulses with different shaped sizes of femtosecond laser.     

Fast femtosecond laser ablation for efficient cutting of sintered alumina substrates

Fast, accurate cutting of technical ceramics is a significant technological challenge because of these materials' typical high mechanical strength and thermal resistance. Femtosecond pulsed lasers offer significant promise for meeting this challenge. Femtosecond pulses can machine nearly any material with small kerf and little to no collateral damage to the surrounding material. The main drawback to femtosecond laser machining of ceramics is slow processing speed. In this work we report on the improvement of femtosecond laser cutting of sintered alumina substrates through optimisation of laser processing parameters. The femtosecond laser ablation thresholds for sintered alumina were measured using the diagonal scan method. Incubation effects were found to fit a defect accumulation model, with F_th,1=6.0 J/cm² (±0.3) and F_th,∞=2.5 J/cm² (±0.2). The focal length and depth, laser power, number of passes, and material translation speed were optimised for ablation speed and high quality. Optimal conditions of 500 mW power, 100 mm focal length, 2000 µm/s material translation speed, with 14 passes, produced complete cutting of the alumina substrate at an overall processing speed of 143 µm/s – more than 4 times faster than the maximum reported overall processing speed previously achieved by Wang et al. [1]. This process significantly increases processing speeds of alumina substrates, thereby reducing costs, making femtosecond laser machining a more viable option for industrial users.     

An anti-reflective 1D rectangle grating on GaAs solar cell using one-step femtosecond laser fabrication

We report the fabrication of the anti-reflective micro/nano-structure on absorbing layer of GaAs solar cell surface using an efficient approach based on one-step femtosecond laser irradiation. Morphology of the microstructures and reflectance of the cell irradiated are characterized with SEM and spectrometer to analyze the influence of laser processing parameters on the change of microstructures induced and the reflectance. It has been found that the rectangle grating micro/nano-structure with a period of 700 nm and width of 600 nm is obtained neatly with laser pulse energy of 30.5 μJ(pulse duration is 130 fs, center wavelength is 800 nm, scanning speed is 2.2 mm/s and spot diameter is 22 µm). Reflectance has been suppressed to 23.6% with rectangle structure from 33% of planar cell. In addition, simulation using a finite-difference-time domain(FDTD) method results show that the rectangle grating micro/nano-structure can effectively suppress the reflection within large wavelength ranges.     

High resolution scanning microanalysis on material surfaces using UV femtosecond laser induced breakdown spectroscopy

Femtosecond lasers together with high resolution optics have given us the ability to achieve submicron ablation spots which can play an important role in specific micromachining applications. Light emitted from the plasma at the sample surface created by a focused femtosecond laser pulse can also be used in laser induced breakdown spectroscopy (LIBS) and allows us to characterize the chemical composition of the target surface with micron-level lateral resolution. The spatial resolution using LIBS has often been defined by measuring the FWHM of the crater size. In this report, we study the application of femtosecond 266 nm laser pulses with very low energies of 10׳s of nanojoules. We have investigated spatial resolution using the detection of thin strips of chromium on silicon substrates and compared the actual width of the chromium versus the experimentally obtained width using LIBS detection. The variation of signal levels for low pulse energies is investigated on chromium surfaces. A spatial resolution of ~1 μm was obtained for detection of chromium from the emission.     

Surface treatment of CFRP composites using femtosecond laser radiation

In the present work, we investigate the surface treatment of carbon fiber-reinforced polymer (CFRP) composites by laser ablation with femtosecond laser radiation. For this purpose, unidirectional carbon fiber-reinforced epoxy matrix composites were treated with femtosecond laser pulses of 1024 nm wavelength and 550 fs duration. Laser tracks were inscribed on the material surface using pulse energies and scanning speeds in the range 0.1–0.5 mJ and 0.1–5 mm/s, respectively. The morphology of the laser treated surfaces was investigated by field emission scanning electron microscopy. We show that, by using the appropriate processing parameters, a selective removal of the epoxy resin can be achieved, leaving the carbon fibers exposed. In addition, sub-micron laser induced periodic surface structures (LIPSS) are created on the carbon fibers surface, which may be potentially beneficial for the improvement of the fiber to matrix adhesion in adhesive bonds between CFRP parts.     

Femtosecond laser ablation of cadmium tungstate for scintillator arrays

Ultrafast pulsed laser ablation has been investigated as a technique to machine CdWO₄ single crystal scintillator and segment it into small blocks with the aim of fabricating a 2D high energy X-ray imaging array. Cadmium tungstate (CdWO₄) is a brittle transparent scintillator used for the detection of high energy X-rays and γ-rays. A 6 W Yb:KGW Pharos-SP pulsed laser of wavelength 1028 nm was used with a tuneable pulse duration of 10 ps to 190 fs, repetition rate of up to 600 kHz and pulse energies of up to 1 mJ was employed. The effect of varying the pulse duration, pulse energy, pulse overlap and scan pattern on the laser induced damage to the crystals was investigated. A pulse duration of ≥500 fs was found to induce substantial cracking in the material. The laser induced damage was minimised using the following operating parameters: a pulse duration of 190 fs, fluence of 15.3 J cm⁻² and employing a serpentine scan pattern with a normalised pulse overlap of 0.8. The surface of the ablated surfaces was studied using scanning electron microscopy, energy dispersive X-ray spectroscopy, atomic force microscopy and X-ray photoelectron spectroscopy. Ablation products were found to contain cadmium tungstate together with different cadmium and tungsten oxides. These laser ablation products could be removed using an ammonium hydroxide treatment.     

Behaviour of scintillators under XUV free electron laser radiation

Free electron lasers (FEL) are new generation accelerator-based short wavelength light sources providing high pulse intensity and femtosecond pulse duration, which enable investigation of interaction of elementary excitations in solids under extreme conditions. Using the FLASH facility of HASYLAB at DESY (Hamburg, Germany), we investigated the response of different materials with scintillating properties based on intrinsic emissions to the 25.6 and 13.8 nm FEL radiation by means of time-resolved luminescence spectroscopy. FLASH delivered single pulses of 25 fs duration having energy per pulse up to 30 μJ resulting in power densities of ～10¹² W/cm² on crystals. As a function of excitation density we observed the shortening of lifetime and non-exponential behaviour of emission decays in CaWO₄, while the emission spectra recorded are comparable to those obtained at conventional excitation sources.     

Ar plasma waveguide produced by a low-intensity femtosecond laser

Using the interaction of a low-intensity femtosecond laser pulse (30 fs, 6 × 10¹⁵ Wcm^? 2) with argon cluster jet produced from a slit nozzle, we experimentally probe the formation of a uniform plasma waveguide by the interferogram analysis. The results about evolution of plasma channel demonstrate that it is feasible to produce the plasma waveguide for an fs laser pulse of low-intensity. It takes tens of nanoseconds to form a plasma waveguide. The simulation by one-dimensional Gaussian plasma hydrodynamic expansion model indicates that the temperature of plasma channel is not high under this condition. Thus it takes tens of nanoseconds to form a plasma waveguide.     

Passively Q-switched diode-pumped Raman laser with third-order Stokes eye-safe oscillation

We demonstrate a passively Q-switched all-solid-state laser system with intracavity Raman frequency conversion to the eye-safe spectral region. Laser oscillation at the 1.064 μm wavelength with a pulse repetition rate of several kilohertz was provided by a Nd:YAG crystal and a Cr:YAG passive absorber. Third Stokes oscillations at the 1.599 and 1.494 μm wavelengths were obtained in Ba(NO₃)₂ and PbWO₄ crystals with output pulse energies of 5 μJ and 6 μJ, respectively. The results of the numerical simulation of the pulse dynamics are in good agreement with the experimental data.     

A diode end-pumped passively Q-switched Nd:YAG/KTA Raman laser

A diode end-pumped passively Q-switched Nd:YAG/KTA intracavity Raman laser is presented. A KTA crystal with a size of 5 mm × 5 mm × 25 mm is used as the Raman active medium and its 234 cm^?1 Raman mode is employed to finish the conversion from 1064 nm fundamental laser to 1091 nm Raman laser. A 2 mm thick Cr⁴⁺:YAG crystal is used as the saturable absorber. With an LD pump power of 7.5 W, the first-Stokes power of 250 mW is obtained with a pulse repetition frequency of 14.5 kHz. The corresponding diode-to-Stokes conversion efficiency is 3.3% and the pulse energy is 17.2 μJ. Pulse width is measured to be 12.6 ns and peak power is 1.4 kW.     

Synthesis of Ag-deionized water nanofluids using multi-beam laser ablation in liquids

Multi-pulse laser ablation of silver in deionized water was studied. The laser beams were arranged in a cross-beam configuration. In our experiments, two single-mode, Q-switched Nd-Yag lasers operating at 1064 nm, pulse duration of 5.5 ns and 10 Hz rep rate were used. The laser fluence of the second beam was 0.265 J/cm² for all tests. Two levels of the laser fluences were used for the ablating beam: 0.09 and 0.265 J/cm² (11,014 and 33,042 J/cm² at the focal point, respectively). The silver target was at 50 mm from the cell window and 10 mm deep. The second beam was aligned parallelly with the silver target and focused at 2 mm in front of the focal point of the ablating beam. For all cases, the delay time between the ablating beam and the cross-beam was 40 μs. In general, the ablated particles were almost all spherical. For fluence of 0.09 J/cm ² and single-beam approach, the mean particle size was about 29 nm. The majority of the particles, however, were in 19–35 nm range and there were some big ones as large as 50–60 nm in size. For double-beam approach, the particles were smaller with the average size of about 18 nm and the majority of the particles were in 9–21 nm range with few big one as large as 40 nm. For the beam fluence of 0.265 J/cm² and single-beam configuration, the particle sizes were smaller, the mean particles size was about 18 nm and the majority of the particles were in the range of 10–22 nm with some big one as large as 40 nm. For double-beam approach, the mean particle size was larger (24.2 nm) and the majority of the particle were distributed from 14 to 35 nm with some big particles can be found with sizes as big as 70 nm. Preliminary measurements of the thermal conductivity and viscosity of the produced samples showed that the thermal conductivity increased about 3–5% and the viscosity increased 3.7% above the base fluid viscosity even with the particle volume concentration as low as 0.01%.     

Micromachining NiTi tubes for use in medical devices by using a femtosecond laser

Recent growth in medical device technology has been substantially driven by developments in laser micromachining, which is a powerful fabrication technique in which nickel–titanium (Nitinol, NiTi) alloy materials that exhibit superelastic and shape memory properties are formed (e.g., self-expanding stents). In this study a NiTi tube curve surface process is proposed, involving a femtosecond laser process and a galvano-mirror scanner. The diameter of the NiTi tube was 5.116 mm, its thickness was 0.234 mm, and its length was 100 mm. The results indicated that during the machine process the ablation mechanism of the NiTi tubes was changed by altering the machining path. The path alteration enhanced the laser ablation rate from 12.3 to 26.7 μm/J. Thus the path alteration contributed to a wide kerf line, enabling the assisted air to efficiently remove the debris deposited at the bottom of the kerf during the laser ablation process. The results indicated that the NiTi tube curve process enhanced the laser ablation rate by two times and reduced the amount of energy accumulated within the materials by 50% or more. By altering the machining path using the scanning system, this process can decrease the production of heat affected zones (the accumulation of thermal energy) in medical device applications.     

An experimental study of an acousto-optic Q-switched Yb3+-doped all-fiber laser

The Q-switched fiber lasers are very attractive sources in many applications such as military affairs, surgical operation, laser machining, laser marking, nonlinear frequency conversion, range finding, remote sensing and optical time domain reflectometer. In this paper, an acousto-optic Q-switched Yb³⁺-doped all-fiber laser at 1083 nm is reported. The pulse energy of 2.94 mJ has been obtained at the pump power of 8.47 W, and the pulse width is 3 μs.     

Diode-pumped actively Q-switched Nd:GGG laser operating at 938 nm

The stimulated emission cross-section of Nd:GGG crystal in 938 nm transition was measured by the amplifier approach. It is 2.3×10^?20 cm². A quasi-continuous-wave diode pumped, actively Q-switched Nd:GGG laser operating at 938 nm was demonstrated. Pumped by laser diodes with 900 W peak power and 300 μs pulse duration, it generated 168 mJ energy in long pulse mode. The slope efficiency was 36%. Q-switched by a KD?P Pockels cell, 41 mJ output pulse energy was obtained. The pulse duration and peak power were 120 ns and 340 kW, respectively. The optical to optical efficiency was 7%.     

High energy femtosecond OPA pumped by 1030 nm Yb:KGW laser.

We present a traveling-wave-type optical parametric amplifier (OPA) pumped at 1.03 μm by a Yb:KGW laser that produces tunable high-energy pulses of 6.5–4 μJ in the mid-infrared (mid-IR) region from 3.6 to 7 μm. Pumping with negatively chirped pulses generates nearly transform-limited (TL) mid-IR pulses of 300–330 fs length. Pumping with TL pulses of 200 fs not only decreases the output energy by a factor of 1.5, but also decreases the mid-IR pulse-length to 160 fs after additional compression. The compact and simple OPA setup is ideal for femtosecond infrared experiments in the fingerprint region.     

Manganite heterojunction photodetectors for femtosecond pulse laser measurements

We report a sensitive photodetector, based on a manganite junction La_2/3Ca_1/3MnO₃/Si, for femtosecond (fs) pulse laser energy per pulse and average power measurements. The La_2/3Ca_1/3MnO₃/Si photodetector exhibits D^? (normalized detectivity) greater than 5.229×10⁹ cm Hz^1/2 W^?1. The open-circuit photovoltage and short-circuit photocurrent responsivities reach ～268 V/mJ and ～275 A/mJ for single pulse irradiation, respectively, and the open-circuit photovoltage responsivity reaches ～1.7 V/W for average power illumination. The experimental results make the manganite junction a promising fs laser measurement detector and reference standard for calibrating fs lasers.     

Laser diode end-pumped passively Q-switched Tm,Ho:YLF laser with Cr:ZnS as a saturable absorber

Output performance of a continuous-wave (CW) laser diode end-pumped passively Q-switched Tm,Ho:YLF laser is demonstrated with a Cr:ZnS crystal as the saturable absorber. We particularly investigate the influence of saturable absorber's position in the resonator when the Cr:ZnS crystal is placed close to and far from the laser beam waist. We compare the experimental results at the two different positions, and find that the laser shows unusual output characteristics when the Cr:ZnS saturable absorber is placed close to the beam waist. The pulse width and the pulse energy almost keep constant, measured about 1.25 μs and 4 μJ respectively, when the pump power is changed in the range of 1–1.9 W. Moreover, the pulse repetition frequency can be tuned between 1.3 kHz and 2.6 kHz by changing the pump power. The output wavelength of the passively Q-switched laser shifts to 2053 nm from 2067 nm in CW operation.     

Diode-pumped Nd:YAG ceramic laser at 946 nm passively Q-switched with a Cr4+:YAG saturable absorber

We demonstrate a diode-pumped Nd:YAG ceramic laser with emission at 946 nm that is passively Q-switched by single-crystal Cr⁴⁺:YAG saturable absorber. An average output power of 1.7 W is measured under 18.4 W of incident power using an output mirror with transmission T=4%. The corresponding optical-to-optical efficiency is 9.2%. The laser runs at a pulse repetition rate of 120 kHz and delivers pulses with energy of 14 μJ and duration of 80 ns, which corresponds to a peak power of 175 W.