Nanostructures on GaAs surfaces due to 60 keV Ar+-ion beam sputtering

The effect of 60 keV Ar⁺-ion beam sputtering on the surface topography of p-type GaAs(1 0 0) was investigated by varying angle of incidence of the ion (0–60°) with respect to substrate normal and the ion fluence (2 × 10¹⁷–3 × 10¹⁸ ions/cm²) at an ion flux of 3.75 × 10¹³ ions/cm²-s. For normal incidence and at a fluence of 2 × 10¹⁷ ions/cm², holes and islands are observed with the former having an average size and density of 31 nm and 4.9 × 10⁹ holes/cm², respectively. For 30° and 45° off-normal incidence, in general, a smooth surface appears which is unaffected by increase of fluence. At 60° off-normal incidence dots are observed while for the highest fluence of 3 × 10¹⁸ ions/cm² early stage of ripple formation along with dots is observed with amplitude of 4 nm. The applicability and limitations of the existing theories of ion induced pattern formation to account for the observed surface topographies are discussed.     

Silver sulphide growth on Ag(111): A medium energy ion scattering study

The interaction of S₂ with Ag(111) under ultra-high vacuum conditions has been investigated by medium energy ion scattering (MEIS). 100 keV He⁺ MEIS measurements provide a direct confirmation of a previous report, based on thermal desorption, that the growth of multilayer films of Ag₂S occurs through a continuous corrosion process. These films show a commensurate (√7 × √7)R19° unit mesh in low energy electron diffraction, consistent with the epitaxial growth of (111) layers of the high-temperature F-cubic phase of Ag₂S. The substantial range of co-existing film thicknesses found indicates that the growth must be in the form of variable-thickness islands. The use of 100 keV H⁺ incident ions leads to a very rapid decrease in the sulphide film thickness with increasing exposure that we attribute to an unusual chemical leaching, with implanted H atoms interacting with S atoms and desorption of H₂S from the surface.     

Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

Ge ions of 100 keV were implanted into a 120 nm-thick SiO₂ layer on n-Si at room temperature while those of 80 keV were into the same SiO₂ layer on p-Si. Samples were, subsequently, annealed at 500°C for 2 h to effectively induce radiative defects in the SiO₂. Maximum intensities of sharp violet photoluminescence (PL) from the SiO₂/n-Si and the SiO₂/p-Si samples were observed when the samples have been implanted with doses of 1×10¹⁶ and 5×10¹⁵ cm⁻², respectively. According to current–voltage (I–V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100°C for 4 h show the leakage at both the reverse and the forward region.     

Thermo,Iono and photoluminescence properties of 100 MeV Si7+ ions bombarded CaSiO3:Eu3+ nanophosphor

This paper reports on the thermo (TL), iono (IL) and photoluminescence (PL) properties of nanocrystalline CaSiO₃:Eu³⁺ (1–5 mol %) bombarded with 100 MeV Si⁷⁺ ions for the first time. The effect of different dopant concentrations and influence of ion fluence has been discussed. The characteristic emission peaks ⁵D₀→⁷F_J (J=0, 1, 2, 3, 4) of Eu³⁺ ions was recorded in both PL (1×10¹¹–1×10¹³ ions cm^?2) and IL (4.16×10¹²–6.77×10¹² ions cm^?2) spectra. It is observed that PL intensity increases with ion fluence, whereas in IL the peaks intensity increases up to fluence 5.20×10¹² ions cm^?2, then it decreases. A well resolved TL glow peak at ～304 °C was recorded in all the ion bombarded samples at a warming rate of 5 °C s^?1. The TL intensity is found to be maximum at 5 mol% Eu³⁺ concentration. Further, TL intensity increases sub linearly with shifting of glow peak towards lower temperature with ion fluence.     

Sputter damage in Si surface by low energy Ar+ ion bombardment

The damage distributions in Si(1 0 0) surface after 1.0 and 0.5 keV Ar⁺ ion bombardment were studied using MEIS and Molecular dynamic (MD) simulation. The primary Ar⁺ ion beam direction was varied from surface normal to glancing angle. The MEIS results show that the damage thickness in 1.0 keV Ar ion bombardment is reduced from about 7.7 nm at surface normal incidence to 1.3 nm at the incident angle of 80°. However, the damage thickness in 0.5 keV Ar ion bombardment is reduced from 5.1 nm at surface normal incidence to 0.5 nm at the incident angle of 80°. The maximum atomic concentration of implanted Ar atoms after 1 keV ion bombardment is about 10.5 at% at the depth of 2.5 nm at surface normal incidence and about 2.0 at% at the depth of 1.2 nm at the incident angle of 80°. However, after 0.5 keV ion bombardments, it is 8.0 at% at the depth of 2.0 nm for surface normal incidence and the in-depth Ar distribution cannot be observable at the incident angle of 80°. MD simulation reproduced the damage distribution quantitatively.     

Luminescence and defect studies of YAlO3:Dy3+, Sm3+ single crystals exposed to 100 MeV Si7+ ion beam

Ionoluminescence (IL) and photoluminescence (PL) spectra for different rare earth ions (Sm³⁺ and Dy³⁺) activated YAlO₃ single crystals have been induced with 100 MeV Si⁷⁺ ions with fluence of 7.81×10¹² ions cm^?2. Prominent IL and PL emission peaks in the range 550–725 nm in Sm³⁺ and 482–574 nm in Dy³⁺ were recorded. Variation of IL intensity in Dy³⁺ doped YAlO₃ single crystals was studied in the fluence range 7.81×10¹²–11.71×10¹² ions cm^?2. IL intensity is found to be high in lower ion fluences and it decreases with increase in ion fluence due to thermal quenching as a result of an increase in the sample temperature caused by ion beam irradiation. Thermoluminescence (TL) spectra were recorded for fluence of 5.2×10¹² ions cm^?2 on pure and doped crystals at a warming rate of 5 °C s^?1 at room temperature. Pure crystals show two glow peaks at 232 (Tg₁) and 328 °C (Tg₂). However, in Sm³⁺ doped crystals three glow peaks at 278 (Tg₁), 332 (Tg₂) and 384 °C (Tg₃) and two glow peaks at 278 (Tg₁) and 331 °C (Tg₂) in Dy³⁺ was recorded. The kinetic parameters (E, b s) were estimated using glow peak shape method. The decay of IL intensity was explained by excitation spike model.     

Simulation and measurement of AES depth profiles; a case study of the C/Ta/C/Si system

A multilayer sample (C (23.3 nm)/Ta (26.5 nm)/C (22.7 nm)/Si substrate) was submitted to AES depth profiling by Ar⁺ ions of energy 1 keV and angles of incidence of 72°, 78°, and 82°. The shapes of the as-measured depth profiles were strongly different emphasizing that the ion-bombardment conditions strongly affects the shapes of measured depth profiles. We simulated the depth profile measured at an angle of incidence of 72° by calculating the backscattering factor, applying attenuation lengths available in the literature, and simulating the ion-bombardment-induced specimen alteration with a TRIDYN simulation and a trial and error method. The good agreement between the calculated and measured depth profiles justified the method applied.     

Gain properties of the transition emissions near the second telecommunication window in Ho3+-doped multicomponent heavy-metal gallate glasses

Efficient infrared emissions near the second telecommunication window in Ho³⁺-doped multicomponent heavy-metal gallate (MHG) glasses have been observed. The maximum stimulated emission cross-sections are calculated to be 2.94×10^?21 and 2.08×10^?21 cm² for 1200 and 1390 nm emissions, respectively. Excitation spectra reveal that the 642 and 538 nm wavelengths are practical pumping conditions for 1.2 and 1.39 μm emissions, respectively. Gain cross-sections are evaluated and positive gain bands have been anticipated. The theoretical gain results indicate that the appealing infrared emissions near the second telecommunication window from Ho³⁺-doped MHG glasses with low maximum phonon energy of ～660 cm^?1 make them attractive in developing ～1.2 μm and E-band (1360–1460 nm) optical amplifiers.     

Effect of phosphorus irradiation on the structural,electrical, and optical characteristics of ZnO thin films

Phosphorus irradiation at a low energy (50 keV) and at a dosage of 8×10¹⁴ ions/cm² was carried out on 〈002〉 ZnO films grown by using a pulsed laser deposition technique (Sample A). Subsequent rapid thermal annealing at 650 °C and 750 °C was performed to remove defects resulting from the irradiation (samples B and C, respectively). Atomic force microscopy was used to determine the root mean square roughness, which was 10.07, 8.66, and 9.31 nm for samples A, B, and C, respectively. Low-temperature photoluminescence measurements revealed increased deep-level defect peaks following irradiation; however, the subsequent annealing minimized the defects. Although the dominant donor-bound exciton peak verifies the n-type conductivity of the films, the free–electron–to–acceptor and donor-to-acceptor pair peaks in the irradiated samples confirm an increase in acceptor concentration.     

Medium energy ion scattering investigation of methylthiolate-induced modification of the Au(111) surface

100 keV H⁺ scattering has been used to investigate the structure of the methylthiolate/Au(111) interface in the Au(111)(√3 × √3)R30° phase. Adsorption of the thiolate onto the clean Au(111) surface leads to a large drop in the scattered ion yield due to the lifting of the clean surface ‘herring-bone’ reconstruction, but the thiolate-covered surface shows an ion yield higher than that of an unreconstructed Au(111) surface, providing direct evidence of a significant number of Au atoms that are displaced from their bulk-terminated positions at the buried interface. Simulations for two different Au adatoms models at the interface, namely, the Au-adatom-monothiolate (AAM) and Au-adatom-dithiolate (AAD) models, show significant sensitivity to the exact values of interlayer spacings and atomic vibrational amplitudes, but the comparison with experimental results appears to favour the AAD model with 0.17 ML Au adatoms in bridging sites at the interface.     

Fast atom diffraction during grazing scattering from a MgO(001) surface

Fast neutral atoms and molecules with energies from 0.4 up to 3 keV are scattered under a grazing angle of incidence from a clean and flat MgO(001) surface. For “axial surface channeling” conditions, we observe defined diffraction patterns in the angular intensity distributions for scattered ³He and ⁴He atoms as well as H₂ molecules. The diffraction patterns are analyzed in terms of semiclassical trajectory calculations making use of projectile surface interaction potentials derived from density functional theory and from pair potentials calculated from Hartree–Fock wave functions. From comparison of measured and calculated diffraction patterns we deduced the rumpling of the topmost surface layer of MgO(001), i.e. an inward shift of Mg²⁺ ions with respect to O^2? ions, of (0.03±0.03) Å.     

Photolysis of SF6 adsorbed on Si(111)-7 × 7 by monochromatic soft X-ray

Continuous-time photoelectron spectroscopy (PES) and photon-exposure-dependent photon-stimulated desorption (PSD) were employed to investigate the monochromatic soft X-ray-induced dissociation of SF₆ molecules adsorbed on Si(111)-7 × 7 at 30 K (SF₆ dose = 3.4 × 10¹³ molecules/cm², ～ 0.5 monolayer). The photon-induced evolution of adsorbed SF₆ was monitored at photon energies of 98 and 120 eV [near the Si(2p) edge], and sequential valence-level PES spectra made it possible to deduce the photolysis cross section as a function of energy. It was found that the photolysis cross sections for 98 and 120 eV photons are ～ 2.7 × 10^? 17 and ～ 3.7 × 10^?17 cm², respectively. The changes in the F^? and F⁺ PSD ion yields were also measured during irradiation of 120 eV photons. The photon-exposure dependencies of the F^? and F⁺ ion yields show the characteristics: (a) the dissociation of adsorbed SF₆ molecules is ascribable to the substrate-mediated dissociations [dissociative attachment (DA) and dipolar dissociation (DD) induced by the photoelectrons emitting from the silicon substrate]; (b) at early stages of photolysis, the F^? yield is mainly due to DA and DD of the adsorbed SF₆ molecules, while at high photon exposure the F^? formation by electron capture of the F⁺ ion is likely to be the dominant mechanism; (c) the F⁺ ion desorption is associated with the bond breaking of the surface SiF species; (d) the surface SiF is formed by reaction of the surface Si atom with the fluorine atom or F^? ion produced by scission of S–F bond of SF_n (n = 1–6) species.     

Formation of bubbles and blisters in hydrogen ion implanted polycrystalline tungsten

ABSTRACT

Tungsten (W) has been regarded as one of the most promising plasma facing materials (PFMs) in fusion reactors. The formation of bubbles and blisters during hydrogen (H) irradiation will affect the properties of W. The dependence of implantation conditions, such as fluence and energy, is therefore of great interest. In this work, polycrystalline tungsten samples were separated into two groups for study. The thick samples were implanted by 18?keV H₃⁺ ions to fluences of 1?×?10¹⁸, 1?×?10¹⁹ and 1?×?10²⁰ H⁺/cm², respectively. Another thick sample was also implanted by 80?keV H₂⁺ ions to a fluence of 2?×?10¹⁷ H⁺/cm² for comparison. Moreover, the thin samples were implanted by 18?keV H₃⁺ ions to fluences of 9.38?×?10¹⁶, 1.88?×?10¹⁷ and 5.63?×?10¹⁷ H⁺/cm², respectively. Focused ion beam (FIB) combined with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used for micro-structure analysis, while time-of-flight ion mass spectrometry (ToF-SIMS) was used to characterize the H depth profile. It is indicated that bubbles and blisters could form successively with increasing H⁺ fluence. H bubbles are formed at a fluence of ～5.63?×?10¹⁷ H⁺/cm², and H blisters are formed at ～1?×?10¹⁹ H⁺/cm² for 18?keV H₃⁺ implantation. On the other hand, 80?keV H₂⁺ ions can create more trapping sites in a shallow projected range, and thus enhancing the blisters formation with a relatively lower fluence of 2?×?10^17?H⁺/cm². The crack-like microstructures beneath the blisters are also observed and prefer to form on the deep side of the implanted range.     

On the rate constants of OH + HO2 and HO2 + HO2: A comprehensive study of H2O2 thermal decomposition using multi-species laser absorption

Hydrogen peroxide (H₂O₂) and hydroperoxy (HO₂) reactions present in the H₂O₂ thermal decomposition system are important in combustion kinetics. H₂O₂ thermal decomposition has been studied behind reflected shock waves using H₂O and OH diagnostics in previous studies (Hong et al. (2009) [9] and Hong et al. (2010) [6,8]) to determine the rate constants of two major reactions: H₂O₂ + M → 2OH + M (k₁) and OH + H₂O₂ → H₂O + HO₂ (k₂). With the addition of a third diagnostic for HO₂ at 227 nm, the H₂O₂ thermal decomposition system can be comprehensively characterized for the first time. Specifically, the rate constants of two remaining major reactions in the system, OH + HO₂ → H₂O + O₂ (k₃) and HO₂ + HO₂ → H₂O₂ + O₂ (k₄) can be determined with high-fidelity.No strong temperature dependency was found between 1072 and 1283 K for the rate constant of OH + HO₂ → H₂O + O₂, which can be expressed by the combination of two Arrhenius forms: k₃ = 7.0 × 10¹² exp(550/T) + 4.5 × 10¹⁴ exp(?5500/T) [cm³ mol^?1 s^?1]. The rate constants of reaction HO₂ + HO₂ → H₂O₂ + O₂ determined agree very well with those reported by Kappel et al. (2002) [5]; the recommendation therefore remains unchanged: k₄ = 1.0 × 10¹⁴ exp(?5556/T) + 1.9 × 10¹¹⁺exp(709/T) [cm³ mol^?1 s^?1]. All the tests were performed near 1.7 atm.     

Li3+ ion irradiation effects on ionic conduction in P(VDF–HFP)–(PC + DEC)–LiClO4 gel polymer electrolyte system

Swift heavy ion irradiation of P(VDF–HFP)–(PC + DEC)–LiClO₄ gel polymer electrolyte system with 48 MeV Li³⁺ ions having five different fluences was investigated with a view to increase the Li⁺ ion diffusivity in the electrolyte. Irradiation with swift heavy ion (SHI) shows enhancement of conductivity at lower fluences and decrease in conductivity at higher fluences with respect to unirradiated polymer electrolyte films. Maximum room temperature (303 K) ionic conductivity is found to be 2.2 × 10^− 2 S/cm after irradiation with fluence of 10¹¹ ions/cm². This interesting result could be ascribed to the fluence-dependent change in porosity and to the fact that for a particular ion beam with a given energy higher fluence provides critical activation energy for cross-linking and crystallization to occur, which results in the decrease in ionic conductivity. The XRD results show decrease in the degree of crystallinity upon ion irradiation at low fluences (≤ 10¹¹ ions/cm²) and increase in crystallinity at high fluences (> 10¹¹ ions/cm²). The scanning electron micrographs (SEM) exhibit increased porosity of the polymer electrolyte films after low fluence ion irradiation.     

Preparation and characterization of solid polymer electrolytes based on PHEMO and PVDF-HFP

Polymer electrolyte membranes consisting of a novel hyperbranched polyether PHEMO (poly(3-{2-[2-(2-hydroxyethoxy) ethoxy] ethoxy}methyl-3′-methyloxetane)), PVDF-HFP (poly(vinylidene fluoride-hexafluoropropylene)) and LiTFSI have been prepared by solution casting technique. X-ray diffraction of the PHEMO/PVDF-HFP polymer matrix and pure PVDF-HFP revealed the difference in crystallinity between them. The effect of different amounts of PVDF-HFP and lithium salts on the conductivity of the polymer electrolytes was studied. The ionic conductivity of the prepared polymer electrolytes can reach 1.64 × 10^? 4 S·cm^? 1 at 30 °C and 1.75 × 10^? 3 S·cm^? 1 at 80 °C. Thermogravimetric analysis informed that the PHEMO/PVDF-HFP matrix exhibited good thermal stability with a decomposition temperature higher than 400 °C. The electrochemical experiments showed that the electrochemical window of the polymer electrolyte was around 4.2 V vs. Li⁺/Li. The PHEMO/PVDF-HFP polymer electrolyte, which has good electrochemical stability and thermal stability, could be a promising solid polymer electrolyte for polymer lithium ion batteries.     

Surface characterization of imidazolium ionic liquids by high-resolution Rutherford backscattering spectroscopy and X-ray photoelectron spectroscopy

The surface composition of 1-butyl-3-methylimidazolium hexafluorophosphate ([BMIM] [PF₆]) and 1-butyl-3-methylimidazolium dicyanamide ([BMIM] [DCA]) are studied by high-resolution Rutherford backscattering spectroscopy. Although [BMIM] [PF₆] is almost stoichiometric up to the topmost molecular layer, considerable deviation from the theoretical stoichiometry is observed for [BMIM] [DCA] in a surface layer of ～1.5 nm thickness. Nitrogen is almost completely depleted in this layer while carbon is enhanced. In addition, there are oxygen impurities of ～3 × 10¹⁴ atoms/cm² in this surface layer. With the help of X-ray photoelectron spectroscopy measurements it is concluded that the surface of [BMIM] [DCA] is covered by ～1.7 × 10¹⁴ molecules/cm² of esters and/or carboxylic acids. These contaminant molecules have a preferred orientation, i.e. the carbonyl groups are on the surface of [BMIM] [DCA] and the alkyl chains are pointing towards vacuum. The origin of the contamination layer could be the surface segregation of bulk impurities.     

100 MeV Si8+ ion induced luminescence and thermoluminescence of nanocrystalline Mg2SiO4:Eu3+

Nanoparticles of Mg₂SiO₄:Eu³⁺ have been prepared by the solution combustion technique and the grain size estimated by PXRD is found to be in the range 40–50 nm. Ionoluminescence (IL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ ions with fluences in the range 1.124–22.48×10¹² ions cm^?2 are carried out at IUAC, New Delhi, India. Five prominent IL bands with peaks at 580 nm, 590 nm, 612 nm, 655 nm and 705 nm are recorded. These characteristic emissions are attributed to the luminescence centers activated by Eu³⁺ cations. It is found that IL intensity decreases rapidly in the beginning. Later on, the intensity decreases slowly with further increase of ion fluence. The reduction in the ionoluminescence intensity with increase of ion fluence might be attributed to degradation of Si–O (ν₃) and Si–O (2ν₃) bonds present on the surface of the sample. The red emission with peak at 612 nm is due to characteristic emission of ⁵D₀→⁷F₂ of the Eu³⁺ cations. Thermoluminescence (TL) studies of Mg₂SiO₄:Eu³⁺ pellets bombarded with 100 MeV Si⁸⁺ cations with fluences in the range 5×10¹¹ ions cm^?2 to 5×10¹³ ions cm^?2 are made at RT. Two prominent and well resolved TL glows with peaks at ～220 °C and ～370 °C are observed. It is observed that TL intensity increases with increase of ion fluence. This might be due to creation of new traps during swift heavy ion irradiation.     

Formation and its mechanism of copper metal layers at surface by annealing in reduced atmosphere in CuO–Li2O–Nb2O5–SiO2 glass

A trace amount (0.5 mol%) of CuO-doped 40Li₂O–32Nb₂O₅–28SiO₂ glass (mol%) exhibits the formation of copper metal layers at the glass surface by annealing at temperatures (530 °C) below the glass transition temperature (544 °C) in the reduced atmosphere of 7% H₂–93%Ar. The coordination state of copper ions is examined from optical absorption and Fourier transform infrared (FT-IR) spectrum measurements, indicating the formation of Si–OH and Si–H bonds due to the diffusion of hydrogen into the inside of the glass and the reduction of Cu⁺ and Cu²⁺ ions. The mechanism of the formation of copper metals at the surface is proposed, in which the key points are the reduction of Cu²⁺ to Cu⁺ ions due to the hydrogen and the migration of Cu⁺ ions in the interior of the glass to the surface. The first finding on copper metal layers at the glass surface might have a potential for practical applications such as electrodes in glass.