Ag on Mo(110) studied by AES and STM

Auger electron spectroscopy (AES) and scanning tunnelling microscopy (STM) have been used to investigate the growth behaviour of ultra-thin Ag films on a Mo(110) surface at room temperature. An analysis of AES and STM measurements indicates that three-dimensional (3D) growth of a Ag film is observed. For submonolayer coverage, the growth of Ag is mediated by a two-dimensional step-flow mechanism. During the initial stage of this growth, the first Ag layer nucleates and creates islands (average size of islands is about 180 ± 20 nm²) at Mo step edges. In the monolayer coverage range, the decoration of substrate steps by Ag can be distinguished by the presence of a fractional step of p₁ = 0.86 ± 0.6 Å height at the Ag–Mo boundary. As the sample is post-annealed to 700 K, the morphology of the surface changes. Step-flow growth in this case gives rise to a regular Ag nanostripe network attached to Mo(110) step edges. The corrugation profiles reveal the protrusion of silver nanostripes of thicknesses p₁ = 0.98 ± 0.16 Å and p₂ = 0.39 ± 0.06 Å for submonolayer and monolayer coverage ranges, respectively, above each single step of a Mo terrace morphology.     

Preparation and characterization of iron–molybdate thin films

Mixed Fe–Mo oxides are used in industrial catalytic processes of selective oxidation of methanol to formaldehyde. For better understanding of the structure-reactivity relationships of these catalysts we aim to prepare well-ordered iron–molybdate thin films as model catalysts. Here we have studied Mo deposition onto Fe₃O₄ (111) thin films produced on Pt(111) as a function of Mo coverage and annealing temperature using LEED, AES, STM and IRAS. At low temperatures, the iron oxide film is covered by Mo = O terminated molybdena nanoparticles. Upon oxidation at elevated temperatures (T > 900 K), Mo species migrate into the film and form new bonds with oxygen in the film. The resulting films maintain the crystal structure of Fe₃O₄, and the surface undergoes a (√3 × √3)R30° reconstruction. The structure is rationalized in terms of Fe substitution by Mo in the surface layers.     

The oxidation of Fe(111)

The oxidation of Fe(111) was studied using Auger electron spectroscopy (AES), low energy electron diffraction (LEED), X-ray photoelectron spectroscopy (XPS), ion scattering spectroscopy (ISS) and scanning tunnelling microscopy (STM). Oxidation of the crystal was found to be a very fast process, even at 200 K, and the Auger O signal saturation level is reached within ~ 50 × 10^? 6 mbar s. Annealing the oxidised surface at 773 K causes a significant decline in apparent surface oxygen concentration and produces a clear (6 × 6) LEED pattern, whereas after oxidation at ambient temperature no pattern was observed. STM results indicate that the oxygen signal was reduced due to the nucleation of large, but sparsely distributed oxide islands, leaving mainly the smooth (6 × 6) structure between the islands. The reactivity of the (6 × 6) layer towards methanol was investigated using temperature programmed desorption (TPD), which showed mainly decomposition to CO and CO₂, due to the production of formate intermediates on the surface. Interestingly, this removes the (6 × 6) structure by reduction, but it can be reformed from the sink of oxygen present in the large oxide islands simply by annealing at 773 K for a few minutes. The (6 × 6) appears to be a relatively stable, pseudo-oxide phase, that may be useful as a model oxide surface.     

Effects of Immersion Temperature on Self-Assembled Monolayers of Octanethiol on Au(111)

Self-assembled monolayers (SAMs) of 1-octanethiol (OT) on Au(111) surfaces, prepared at immersion temperatures between 300 K and 363 K in a sealed stainless steel chamber, were studied by scanning tunneling microscopy (STM). An oblique (√3 × √3)R30° OT-SAM structure was observed below 348 K, whereas a superstructure (3×√7)R11° covered the gold surfaces at 363 K. The highly resolved STM images permitted assignment of four symmetry-inequivalent OT molecules per 8.7 × 7.6 Å² unit cell at 363 K. Differences in the topographical heights of the molecules were attributed to the binding of OT sulfur head groups at different adsorption sites on Au(111). This structure was not observed in stirring reflux at a high temperature, which indicates a higher pressure (> 1 atm) in the chamber may be one of crucial factors for structural transition. As the immersion temperature increased, a lower density of vacancy islands and a higher fraction of island area were observed.     

Adsorption behaviors of CO on W(1 1 0) and Mo(1 1 0) surfaces in the β-state are still not clear

Adsorption structure of CO on W and Mo at above ～800 K (β-CO) has been extensively studied in the history of surface science. Most of the previous studies concluded that CO is dissociated in the β-CO, and a tilted structure plays a role as a precursor state of the dissociation. We have recently studied valence band spectra of the β-CO on W(1 1 0), oxygen-precovered W(1 1 0) and Mo(1 1 0) using synchrotron radiation. CO-derived states with binding energies close to those of the 4σ-CO can be observed, implying a non-dissociative chemisorption in this high-temperature state. We suggest that still some additional works need to be done in order to understand adsorption structure of β-CO completely.     

Oxidation of ultra-thin zinc films on Rh(100) surface

The oxidation of submonolayer zinc films on Rh(100) surface by O₂ gas has been studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and scanning tunneling microscopy (STM). With a zinc coverage of 0.8 ML, an atomically flat ultra-thin zinc oxide film formed at an oxygen partial pressure of 2 × 10^? 8 mbar and a temperature of 150 °C. The zinc oxide film showed a c(16 × 2) LEED pattern. The high resolution STM image of the zinc oxide film showed single dotted spots and double dotted spots arranged linearly and periodically along the [01¯1] direction. We propose an atomic arrangement model of the film accounting for the LEED pattern, the STM image, and the atomic arrangement of the bulk ZnO(0001) surface.     

Oxidation of ultra-thin Ti films on Mo(100): Soft X-ray photoelectron spectroscopy study

Titanium oxide films grown on Mo(100) have been investigated by low-energy electron diffraction (LEED) and soft X-ray photoelectron spectroscopy (PES). The film was grown by Ti deposition on Mo(100) and subsequent oxidation of the film by 12 L of O₂ exposure at room temperature. As the film was annealed at 700–1000 °C, the film in which the Ti atoms were in a Ti³⁺ oxidation state was formed. As the film was annealed at 1100–1500 °C, the oxidation state of Ti in the film was converted to Ti²⁺. The valence electronic structure of the film was measured under the condition that the emission from the Mo substrate was minimized due to a Cooper minimum of the Mo 4 d photoionization cross sections (hν = 100 eV). It was found that the Ti 3 d band in normal-emission spectra was increased in intensity when the film was annealed at 1100–1500 °C. As the film was annealed at 1300 °C for 10 s and 20 s, the film-covered Mo(100) gave (2 × 2) and (4 × 1) LEED patterns, respectively. The two-dimensional band structure of the (2 × 2) system was investigated by angle-resolved PES, and it was found that the film with a (1 × 1) periodicity with respect to the Mo(100) substrate existed in the (2 × 2) system.     

Growth of Sn on Mo(110) studied by AES and STM

Scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES) have been used to investigate the growth behavior of ultra-thin Sn films on a Mo(110) surface at room temperature. An analysis of STM and AES measurements indicates that layer-by-layer growth (Frank-van der Merwe mode) for the first two layers of Sn is observed. For submonolayer coverage, tin prefers to nucleate randomly and creates one atom high islands on Mo terraces. In the completed first and second layer, no ordered regions were observed. As the sample is post-annealed to 800 K, the rearrangement of an existing film suggests a Sn–Mo surface alloy formation.     

Lateral interactions and zigzag chains of Ho on the Mo(110) surface

The structure of Ho adsorbed layers on the Mo(110) surface has been studied by low energy electron diffraction (LEED) and scanning tunneling microscope (STM). It has been found that at submonolayer coverages Ho atoms, similarly to studied earlier Gd and Nd, form a rich amount of dilute (n × 2) commensurate structures built from zigzag chains oriented along the [11?0] direction. The formation of zigzag chain structures is initiated by the indirect lateral interaction between adsorbed Ho atoms, which, as is illustrated by Monte Carlo simulations, can be well approximated by a screened Coulomb potential superimposed with Friedel oscillations.     

Ultra thin Al film on the W(110) surface

We have investigated the surface structure of the Al/W(110) surface using low energy electron diffraction (LEED) and low energy ion scattering spectroscopy (ISS). We observe a p(2 × 1) double domain LEED image for the 0.5 ML Al/W(110) surface at annealing temperature 850 °C. We found that 0.5 ML Al atoms cover on the W(110) surface uniformly but do not form 3 or 2-dimensional islands. We also measured the Al adsorption site at the Al/W(110)-p(2 × 1) surface using ISS. We found that Al atoms adsorbed at the center of the bridge site. The height of the adsorbed Al atoms is determined to be 2.18 ± 0.15 Å above the W surface layer.     

The influence of oxygen on the growth of silver on Cu(110)

The influence of the (2 × 1)O reconstruction on the growth of Ag on a Cu(110) surface was studied by scanning tunneling microscopy (STM) and Auger electron spectroscopy (AES). On the bare Cu(110) surface, Stranski–Krastanov growth of silver is observed at sample temperatures between 277 K and 500 K: The formation of a Ag wetting layer is followed by the growth of three-dimensional Ag wires. In contrast, on the oxygen-precovered Cu(110) surface, the growth of silver depends heavily on the substrate temperature. Upon Ag deposition at room temperature, a homogeneous, polycrystalline Ag layer is observed, whereas at 500 K, three-dimensional wires separated by (2 × 1)O reconstructed areas are formed. The behavior of a deposited Ag layer upon annealing is also influenced greatly by the presence of oxygen. On the bare surface, annealing does not change the Ag wetting layer and gives rise to Ostwald ripening of the Ag wires. On the oxygen-precovered surface, however, the initial polycrystalline Aglayer first transforms into Ag wires at around 500 K. Above this temperature, the depletion of the (2 × 1)O reconstructed areas due to Ag-induced O desorption is balanced by the formation of a Ag wetting layer. On both, the bare and the oxygen-precovered Cu(110) surface, the deposited silver diffuses into the Cu bulk at temperatures above 700 K.     

Irreversible nanoscale morphology transformation of an Fe film on Mo(1 1 0) induced by a magnetic STM tip

STM tip-induced surface roughening is reported for a 6 Å Fe film grown on vicinal Mo(1 1 0) at 760 ± 15 K. Using a STM tip of the antiferromagnetic alloy MnNi and tunneling parameters of 0.1 nA and 70 mV, the film morphology was completely transformed over a period of 1 h at room temperature. The results indicate that there is a strong promotion of surface diffusion and interlayer mass transport by the local electric field between the tip and sample and/or a magnetic interaction between the tip and the film. The strain state of the film plays a part in the propagation of this transformation across the scanned area.     

Dissociative and molecular oxygen chemisorption channels on reduced rutile TiO2(110): An STM and TPD study

High-resolution scanning tunneling microscopy (STM) and temperature-programmed desorption (TPD) were used to study the interaction of O₂ with reduced TiO₂(110)–(1 × 1) crystals. STM is the technique of choice to unravel the relation between vacancy and non-vacancy assisted O₂ dissociation channels as a function of temperature. It is revealed that the vacancy-assisted, first O₂ dissociation channel is preferred at low temperature (~ 120 K), whereas the non-vacancy assisted, second O₂ dissociation channel operates at temperatures higher than 150 K–180 K. Based on the STM results on the two dissociative O₂ interaction channels and the TPD data, a new comprehensive model of the O₂ chemisorption on reduced TiO₂(110) is proposed. The model explains the relations between the two dissociative and the molecular O₂ interaction channels. The experimental data are interpreted by considering the available charge in the near-surface region of reduced TiO₂(110) crystals, the kinetics of the two O₂ dissociation channels as well as the kinetics of the diffusion and reaction of Ti interstitials.     

Microstructure and characterization of Al-doped ZnO films prepared by RF power sputtering on Al and ZnO targets

Al-doped zinc oxide (AZO) transparent conductive films were prepared on a glass substrate using a magnetron sputtering system with a pure zinc oxide (ZnO) target and a pure Al target sputtered using radio frequency (RF) power. The RF power was set at 100 W for the ZnO target and varied from 20 to 150 W for the Al target. The morphology of the thin films was examined by field-emission scanning electron microscope (FE-SEM), and their composition was analyzed by the equipped energy-dispersive X-ray spectroscopy (EDS). The cross section of the films determined through FE-SEM indicated that their thickness was around 650 nm. EDS analysis revealed that the Al-dopant concentration of the AZO films increased in the following order: 0.85 at.% (20 W) < 1.60 at.% (40 W) < 3.52 at.% (100 W) < 4.34 at.% (150 W). Analysis of the films using X-ray diffractometer (XRD) indicated that all films had a wurtzite structure with a texture of (0 0 2). High-resolution transmission electron microscopy (HRTEM) revealed a number of defects in the films, such as stacking faults and dislocations. Ultraviolet photoelectron spectroscopy (UPS) was used to estimate the optical energy gap (E_g) for the AZO thin films. The energy gap increases from 3.39 to 3.58 eV as the RF power applied to the Al target increase. The electrical resistivity of the films decreased from 3.43 × 10^?2 Ω cm to 3.29 × 10^?3 Ω cm as the RF power increased from 20 to 150 W when a four-point probe was used to investigate. Atomic force microscope (AFM) revealed that the surface roughness of the films increased with increasing RF power. The average optical transmittance of the films was determined by UV–visible spectrometer. The films are suitable for use as transparent conductive oxide films in the optoelectronic industry. A decrease in the electrical resistivity of the film with increasing Al-dopant concentration was ascribed to an increase in the carrier concentration and density of stacking faults in the films.     

Gold atoms and clusters on MgO(100) films; an EPR and IRAS study

Single gold atoms deposited on single crystalline MgO(1 0 0) films grown on Mo(1 0 0) are characterized by electron paramagnetic resonance spectroscopy as well as IR spectroscopy using CO as probe molecules. In this article we describe the first angular dependent measurements to determine the principal hyperfine components of a secondary hyperfine interaction, namely, with ¹⁷O of the MgO. The values determined here are in perfect agreement with theoretical expectations and corroborate the previously reported binding mechanism of Au atoms on the oxygen anions of the MgO terrace. The temperature dependent EPR data reveal an onset of Au atom mobility at about 80 K while the formation of Au particles occurs only above 125 K. By an analysis of the EPR line width in combination with STM measurements it is possible to deduce an increase of the interatomic distance above 80 K. The Au/CO complexes show a somewhat smaller temperature stability as compared to the Au atoms. The observed thermal stability is in perfect agreement with theoretical predictions for CO desorption.     

Interaction of HNCO with Au(111) surfaces

The surface chemistry of isocyanic acid, HNCO, and its dissociation product, NCO, was studied on clean, O-dosed and Ar ion bombarded Au(111) surfaces. The techniques used are high resolution energy loss spectroscopy (HREELS) and temperature-programmed desorption (TPD). The structure of Ar ion etched surface is explored by scanning tunneling microscopy (STM). HNCO adsorbs molecularly on Au(111) surface at 100 K yielding strong losses at 1390, 2270 and 3230 cm^? 1. The weakly adsorbed HNCO desorbs in two peaks characterized by T_p = 130 and 145 K. The dissociation of the chemisorbed HNCO occurs at 150 K to give NCO species characterized by a vibration at 2185 cm^? 1. The dissociation process is facilitated by the presence of preadsorbed O and by defect sites on Au(111) produced by Ar ion bombardment. In the latter case the loss feature of NCO appeared at 2130 cm^? 1. Isocyanate on Au(111) surface was found to be more stable than on the single crystal surfaces of Pt-group metals. Results are compared with those obtained on supported Au catalysts.     

Structural and electronic characterization of the MgO/Mo(0 0 1) interface using STM

The nucleation and growth of ultrathin MgO films on Mo(0 0 1) have been investigated with scanning tunneling microscopy and spectroscopy. In the initial growth stage, the MgO forms rather uniform islands with rectangular shapes and defined orientation. This behavior reflects a preferential binding of the oxide O ions to the top positions in the Mo support, which can be realized only in confined areas due to the MgO/Mo lattice mismatch. At monolayer coverage, a characteristic square pattern becomes visible in the STM, indicating the formation of an MgO/Mo coincidence lattice. In the coincidence cell, the interface registry alternates between O and Mg ions being in Mo top positions. The resulting imaging contrast in the STM is dominated by a work-function modulation and not by a topographic effect, as demonstrated with STM-conductance and light-emission spectroscopy. The modulated work function in the coincidence cell is assigned to a small buckling of the oxide film with either O or Mg ions being closer to the Mo surface.     

Fabrication of Gd0.5Sr0.5CoO3 film for SOFC cathode by pulsed laser deposition

Gd_0.5Sr_0.5CoO₃ (GSCO) film has been fabricated by pulsed laser deposition (PLD) to be used as the cathode of the solid oxide fuel cell (SOFC). The GSCO thin film obtained has a columnar crystalline structure so that it will have a high permeation property. The PLD technique has been found suitable for growing a film of complex composition because of its good control of stoichiometry and thus for fabricating a GSCO film used as the cathode of the SOFC. The GSCO film has been studied for porosity electrical conductivity and power density. The GSCO film grown at a substrate temperature of 1100 K and oxygen gas pressure of 100 Pa has high electrical conductivity which is 820 S cm^− 1 at 973 K with post annealing at a rather low temperature (1000 K). This value is higher than that of the GSCO film prepared by RF-sputtering with post annealing at a higher temperature (1273 K).     

Hydrogen chemisorption on Si(111)√ 3×√ 3R30∘-B passivated surface studied by thermal desorption and scanning tunneling microscopy

Atomic H chemisorption on the Si(111)√ 3×√ 3R30^°-B surface has been studied by thermal desorption spectroscopy (TDS) and scanning tunneling microscopy (STM). The B-modified Si surface is known to be inert towards adsorbates, since the surface dangling bonds of Si adatoms are passivated by B atoms sitting in sub-surface sites. However, it was found that even on a perfectly passivated surface, H is adsorbed on the surface by destroying the original √ 3 × √ 3 structure. STM observations revealed that H exposure led to the creation of defects at surface sites, and H was subsequently adsorbed as Si-monohydride at these sites. H exposure also caused cluster island formation at the top surface. The islands are composed of hydrogenated amorphous Si atoms or B-hydrogen complexes.