Mn/PbTe(111)界面行为的光电子能谱研究

利用X光电子能谱(XPS)对Mn在PbTe(111)表面上沉积生长的界面性质进行了研究.研究表明Mn的沉积使衬底发生了原子尺度上的突变及金属/半导体界面的形成.从X光电子能谱的芯态能级峰来看,随着Mn膜的沉积Pb 4f峰的低结合能端出现了金属Pb的特征新峰,而Te 3d峰的高结合能端却出现了MnTe特征新峰.且随着Mn膜厚度的增加这些新峰变得越来越明显,当Mn膜厚度超过7 ML(monolayer)(即超过Pb,Te的探测深度)时,衬底信号峰完全消失,只剩下金属Pb和MnTe的芯态能级峰.Mn膜厚度继续增 关键词： PbTe半导体 界面形成 光电子能谱 偏析     

Superconducting Pb island nanostructures studied by scanning tunneling microscopy and spectroscopy

Superconductivity of nanosized Pb-island structures whose radius is 0.8 to 2.5 times their coherence length was studied under magnetic fields using low-temperature scanning tunneling microscopy and spectroscopy. Spatial profiles of superconductivity were obtained by conductance measurements at zero-bias voltage. Critical magnetic fields for vortex penetration and expulsion and for superconductivity breaking were measured for each island. The critical fields depending on the lateral size of the islands and existence of the minimum lateral size for vortex formation were observed.     

Hydrogen-induced missing-row reconstructions of Pd(110) studied by scanning tunneling microscopy

The effect of hydrogen adsorption on the Pd(110) surface structure at room temperature has been studied by scanning tunneling microscopy. Depending on the partial pressure of hydrogen two different reconstructions of Pd(110) have been observed: a (1 × 3) phase at hydrogen pressures in the 10⁻⁹ mbar range and an additional (1 × 2) phase at p_H2 ≥ 5 × 10⁻⁸ mbar. Both reconstructions are found to be of the missing-row type. The evolution of the surface reconstructions has been followed in situ.     

Atomic-registry-dependent electronic structures of sulfur vacancies in ReS2 studied by scanning tunneling microscopy/spectroscopy

Rhenium disulfide (ReS₂) is regarded as a promising candidate for optoelectronic applications (e.g., infrared photodetector), as it maintains a direct bandgap regardless of the number of layers unlike other typical transition metal dichalcogenides. Therefore, it is very important to understand and control the defects of ReS₂ for enhancing the performance of photodevices. In this work, we studied the electronic structures of ReS₂ affected by sulfur vacancies of different atomic registries at the atomic scale. The atomic and electronic structures of the mechanically exfoliated ReS₂ flakes were investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS), and were confirmed using density functional theory (DFT) calculations. The atomic structural models indicate four distinguishable atomic registries of sulfur vacancies on one face of ReS₂. Energetically, these atomic vacancies prefer to locate on the bottom side of the top monolayer of ReS₂ flakes. Only two among four possible kinds of vacancies could be observed using STM and STS, and they were identified using additional DFT calculations. We believe that our results regarding the identification of the defects and understanding the corresponding effects for electronic structures will provide important insights to enhance the performances of ReS₂-based optoelectronic devices in the future.     

Plasma nitridation of Ge(100) surface studied by scanning tunneling microscopy

The geometric and electronic structures of the surface species on Ge(100) after plasma nitridation were investigated in this study. An electron cyclotron resonance (ECR) plasma source was used to directly nitride Ge(100), and scanning tunneling microscopy and spectroscopy (STM/STS) were employed to study the structures of the nitrided surface. Nitridation at room temperature generated a large diversity of adsorbate sites on the surface containing N, O, and displaced Ge atoms, differentiated by annealing between 200 °C and 450 °C. Conversely, nitridation at 500 °C produced Ge–N adsorbate sites which formed ordered and disordered structures on the surface free from oxygen. Density functional theory (DFT) simulations were performed focusing on the ordered nitride structure, and the simulated surface structure showed a good correspondence with the STM data. DFT calculations also found an increase of density of states near the Fermi level on the ordered nitride structure, which is consistent with the Fermi level pinning observed in the STS results. The DFT results predict H-passivation can unpin the Fermi level of the nitrided surface by reducing the dangling bonds and the bond strain, but the residual plasma damage and the low nitridation rate in UHV are challenges to obtain complementary experimental results.     

Bistability in scanning tunneling spectroscopy of Ga-terminated Si(111)

Bistable electron transport, a phenomenon usually associated with double-barrier structures, has been observed with a conventional STM junction formed between a metal tip and a Ga-terminated Si(111) surface at 77 K. Large hysteresis loops appear in the current-voltage characteristics when electrons are injected from the tip to the surface. The turn-on bias varies from -3.1 to -4.0 V and shows an inverse dependence on the tip-sample distance, indicating a strong field effect. The turn-off bias, however, is essentially pinned at a conductance threshold of -2.7 V.     

Investigation of the (111) surface of P-doped Si by scanning tunneling microscopy

Received: 27 March 1998     

Electronic excitation of ice monomers on Au(111) by scanning tunneling microscopy

Scanning tunneling microscopy, inelastic tunneling spectroscopy, and electron induced manipulation are used to investigate electronic excitation of D₂O monomers and small clusters adsorbed at the elbows of the Au(111) reconstruction. Diffusion of molecules, dissociation of clusters, and rearrangement of the reconstruction is induced by electronic excitation. Threshold energies of between 200 and 250 meV and of 446 meV are explained by combined vibrational modes of D₂O molecules. External vibrational modes of D₂O molecules on Au(111) are identified by inelastic tunneling spectroscopy at ≈18, 30, and 41 meV.