Ab initio investigation of the electronic structure of AgCl

The structural and electronic behavior of a prototype silver halide, namely AgCl, has been investigated by means of the full-potential linearized augmented plane wave method with the local density approximation. The aim of our study is to focus on the influence of the d metal orbitals through a detailed analysis of the electronic energies. The presence the d Ag orbitals leads to a strong hybridization between them and the p halogen ones, giving rise to specific electronic states organization and charge distribution. As expected from its rock-salt structure, AgCl is as an ionic compound characterized by a mixed p–d top valence band.     

Ab initio study of electronic structure of strained

Micro-hardness and scratch adhesion testing are the most commonly used techniques for assessing the mechanical properties of thin films. Both of these testing methods utilize single-point contact and induce plastic deformation in the substrate and film. However, the influence of adhesion on the measured hardness has been seldom reported so far. In our experiments, diamond-like carbon (DLC) and silicon carbide (SiC) films deposited on silicon and nickel-based alloy substrates by pulsed laser ablation were indented and scratched by a Vickers micro-hardness tester and a diamond-cutter, respectively. It was found that the composite hardness decreased more rapidly for poor adhesion when increasing the indentation load. The result was explained by the elastic-plastic deformation mode of indentation and helped us to understand the physical meaning of one parameter commonly introduced in the models used to separate film hardness from the composite hardness. Received 30 June 1998     

Ab initio studies of the atomic and electronic structure of pure and hydrogenated a-Si

We propose a method to simulate a-Si and a-Si:H using an ab initio approach based on the Harris functional and thermally-amorphisized periodically-continued cells with at least 64 atoms. Hydrogen incorporation was achieved via diffusive addition. In preparing samples that may simulate the distributions of atoms in the amorphous materials, simulated annealing calculations were carried out from given starting conditions using short and long time steps. The different time-steps led to samples having distinctly different topological disorder. The radial distribution functions (partial and total) of the resulting samples were calculated and compared with measured distributions; the agreement is very good. These comparisons allowed some tentative conclusions to be made as regards the kind of disorder prevailing in the real samples. In addition, we studied the effect of the topological disorder on the electronic densities of states of the samples; the passivating effect of hydrogen can be observed. Received 17 May 2001     

Ab initio many-body treatment of the electronic structure of metals

We propose and apply a combination of an ab initio (band-structure) calculation with a many-body treatment including screening effects. We start from a linearized muffin-tin orbital (LMTO) calculation to determine the Bloch functions for the Hartree one-particle Hamiltonian, from which we calculate the static susceptibility and dielectric function within the standard random phase approximation (RPA). From the Bloch functions we obtain maximally localized Wannier functions, using a method proposed by Marzari and Vanderbilt. Within this Wannier basis all relevant one-particle and unscreened and screened Coulomb matrix elements are calculated. This yields a multi-band Hamiltonian in second quantization with ab initio parameters, for which screening has been taken into account within the simplest standard approximation. Then, established methods of many-body theory are used. We apply this concept to a simple metal, namely lithium (Li). Here the maximally localized Wannier functions turn out to be of the sp³-orbital kind. Furthermore, only the on-site contributions of the screened Coulomb matrix elements are relevant, and a generalized, four-band Hubbard model is justified. The screened on-site Coulomb matrix elements are considerably smaller than the band width because of which it is sufficient to calculate the selfenergy in weak-coupling approximation. We compare results obtained within the screened Hartree-Fock approximation (HFA) and within the second-order perturbation theory (SOPT) in the Coulomb matrix elements for Li and find that many-body effects are small but not negligible even for this simple metal.     

Ab initio studies of the electronic properties of the silica surface

Self-consistent unrestricted Hartree-Fock calculations for the surface of crystalline silica (α-quartz) have been performed. We report here the one-electron energy levels and wavefunctions for several models of surface geometry, and a comparison is then made with experimentally determined densities of states.     

非晶碳结构建模和电子结构的第一性原理研究

基于密度泛函理论，采用了一种更为精确的交换相关泛函OLYP(OPTX+LYP)，对密度范围从2.0到3.2 g/cm³的非晶碳进行结构建模. 模拟得到的5个碳网络结构无论从径向分布函数还是sp³含量都与实验符合得很好. 对非晶碳电子结构的研究表明费米能级附近的电子态密度主要是sp²碳原子的贡献. 随着密度的增加，sp³碳原子增加，费米能级附近的态密度越来越小. 小环结构增加了费米能级附近的电子态密度，缺陷态在费米能级形     

Li_2NH晶体结构建模和电子结构的第一性原理研究

基于密度泛函理论的赝势-平面波方法,采用三种模型分别研究Li,N原子对N—H键方位的影响以及N—H键间的相互影响,得到了Li2NH的晶体结构和H原子的占位位置.计算结果表明:Li2NH晶体为层状结构,空间群为P42,晶胞中4个N—H键分为两层,层内N—H键为反平行排列,层间N—H键为垂直排列.态密度和电子局域函数(ELF)分析表明,N—H键呈明显的共价键特性,Li和N—H键呈明显的离子键相互作用.可逆储氢反应Li2NH+H2/LiNH2+LiH在温度0K时的反应焓为69.6kJ/molH2,与实验结果66kJ/molH2符合得较好.     

非晶碳结构建模和电子结构的第一性原理研究

基于密度泛函理论,采用了一种更为精确的交换相关泛函OLYP(OPTX+LYP),对密度范围从2.0到3.2 g/cm³的非晶碳进行结构建模. 模拟得到的5个碳网络结构无论从径向分布函数还是sp³含量都与实验符合得很好. 对非晶碳电子结构的研究表明费米能级附近的电子态密度主要是sp²碳原子的贡献. 随着密度的增加,sp³碳原子增加,费米能级附近的态密度越来越小. 小环结构增加了费米能级附近的电子态密度,缺陷态在费米能级形 关键词： 非晶碳 密度泛函理论 电子结构     

Ab initio studies on all-trans-polyene

Ab initio crystal orbital calculations have been performed on all-trans-polyene using a minimal STO-3G basis set. Several ground state properties such as the equilibrium structure, the most important force constants, the band structure and the density of states are reported. An alternant structure with $\text{r}{}_{\mathrm{<mtext>C=C</mtext>}}\text{= 1.327}\text{A}\text{?}$, $\text{r}{}_{\mathrm{<mtext>C-C</mtext>}}\text{= 1.477}\text{A}\text{?}$, $\text{?}\text{CCC}\text{= 124.2°}$ and $\text{r}{}_{\mathrm{<mtext>C-H</mtext>}}\text{= 1.085}\text{A}\text{?}$ was found to have the lowest energy.     

Effect of pressure on the atomic and electronic structure of enstatite MgSiO3: Ab initio calculations

Simulation results for the effect of pressure on the atomic and electronic structure of MgSiO₃ are presented. They are in good agreement with experimental data. It is shown that, when the pressure rises from 0 to 2 GPa, the bandgap increases from 4.67 to 4.74 eV because of the electron charge redistribution between atoms in the enstatite structure.     

Ab initio study of the electronic and atomic structure of the wolframite-type ZnWO4

Ab initio quantum chemistry calculations of the structural and electronic properties of monoclinic wolframite-type ZnWO₄ crystal have been performed within the periodic linear combination of atomic orbitals (LCAO) method using six different Hamiltonians, based on density functional theory (DFT) and hybrid Hartree-Fock-DFT theory. The obtained results for optimized structural parameters, band gap and partial density of states are compared with available experimental data, and the best agreement is observed for hybrid Hamiltonians. The calculations show that zinc tungstate is a wide band gap material, with the direct gap about 4.6 eV, whose valence band has largely O 2p character, whereas the bottom of conduction band is dominated by W 5d states.     

GaN中与C和O有关的杂质能级第一性原理计算

用局域密度泛函线性丸盒轨道大型超原胞方法(32个原子),对纯纤锌矿结构的GaN用调节计算参数(如原子球与“空球”的占空比)在自洽条件下使Eg的计算值(323eV)接近实验值(35eV).然后以原子替代方式自洽计算杂质能级在Eg中的相对位置.模拟计算了六角结构GaN中自然缺陷以及与C和O有关的杂质能级位置,包括其复合物.计算结果表明,单个缺陷如镓空位VGa、氮空位VN、氧代替氮ON、炭代替氮CN、炭代替镓CGa等与已有的计算结果基本一致.计算结果表明杂质复合物会导致单个杂质能级位置的相对变化.计算了CNON,CGaCN,CNOV和CGaVGa,其中CNON分别具有深受主与浅施主的特征,是导致GaN黄光的一种可能的结构. 关键词： GaN 杂质能级 电子结构     

Ab initio calculations of electronic structure of anatase TiO2

This paper presents the results of the self-consistent calculations on the electronic structure of anatase phase of TiO2. The calculations were performed using the full potential-linearized augmented plane wave method (FP-LAPW)in the framework of the density functional theory (DFT) with the generalized gradient approximation (GGA). The fullyoptimized structure, obtained by minimizing the total energy and atomic forces, is in good agreement with experiment.We also calculated the band structure and the density of states. In particular, the calculated band structure prefers an indirect transition between valence and conduction bands of anatase TiO2, which may be helpful for clarifying theambiguity in other theoretical works.     

Ab initio simulation of the electronic structure of poly(vinylidene fluoride) during carbonization

The modification observed in the electronic structure of poly(vinylidene fluoride) during carbonization is investigated. The total and partial densities of states and the band gap at different degrees of carbonization of the polymer molecule are calculated from first principles. The results of the calculations are in agreement with experimental data.     

Mg,Al掺杂对LiCoO2体系电子结构影响的第一原理研究

为了研究Mg ,Al掺杂对锂二次电池正极材料LiCoO2 体系的电子结构的影响 ,进而揭示Mg掺杂的LiCoO2 具有高电导率的机理 ,对Li(Co ,Al)O2 和Li(Co,Mg)O2 进行了基于密度泛函理论的第一原理研究 .通过对能带及态密度的分析 ,发现在Mg掺杂后价带出现电子态空穴 ,提高了电导 ,并且通过歧化效应 (disproportionation)改变了Co 3d电子在各能级的分布 ,而Al掺杂则没有这些作用 .O2 - 的离子性在掺杂后明显增强 .     

Ab initio calculations of the geometry and electronic structure of point defects in ferroelectrics with a perovskite structure

Ab initio calculations of the optimized geometry and the electronic structure of lattice defects in incipient perovskite ferroelectrics SrTiO₃ and KTaO₃ are performed in the framework of the density functional theory. The results are presented for the Li⁺ impurity ion at the A site in the KTaO₃ and SrTiO₃ ferroelectrics; the Mn²⁺, Cd²⁺, Ca²⁺, Mg²⁺, and Zn²⁺ ions at the A site and the Mn⁴⁺ and Mg²⁺ ions at the B site in the SrTiO₃ compound; and the MN _Ti ²⁺ -V _O and Mg _Ti ²⁺ -V _O complexes in the SrTiO₃ ferroelectric. The results are obtained by the cluster method with allowance made for the structural relaxation initiated by the defect and, for nonisovalent substitutional impurities, with due regard for the charge and spin states of the defect. It is established that the Ca _Sr ²⁺ , Cd _Sr ²⁺ , Mn _Ti ⁴⁺ , and Mg _Ti ²⁺ ions have a stable central position, whereas the Li _K ⁺ ion in the KTaO₃ compound and the Li _Sr ⁺ , Mn _Sr ²⁺ , and Zn _Sr ²⁺ defects in the SrTiO₃ ferroelectric are off-center ions. The shape of the multiminimum adiabatic potential and the parameters of dielectric relaxators (activation barrier, dipole moment) for polar defects are obtained. The electronic impurity levels are determined for the Li _Sr ⁺ and Mg _Ti ²⁺ neutral defects.