Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Single crystalline GaN nanoribbons were synthesized through nitriding Ga₂O₃ thin films deposited on sapphire (0001) substrates by radio frequency magnetron sputtering. The component and structure of nanoribbons were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The flat and smooth ribbon-like nanostructures are high quality single crystalline hexagonal wurtzite GaN. The thickness and width-to-thickness ratio of the grown GaN nanoribbons are in the range of 8-15 nm and ∼5-10, respectively.     

Spectroscopy of single donors at ZnO(0001) surfaces

Donors near the polar (0001) surface of nominally undoped ZnO were investigated with scanning tunneling microscopy at 5 K. Spatially resolved spectroscopy reveals single and double charging. Equidistant peaks in spectra of ionized donors are attributed to polaron excitation. The data are consistent with doping due to Zn interstitials or complexes.     

Thermally driven solid-phase epitaxy of laser-ablated amorphous AlFe films on (0001)-oriented sapphire single crystals

Solid-phase epitaxy is demonstrated for the metallic binary alloy AlFe. Stoichiometric thin films are deposited at ambient temperature onto c-cut sapphire by pulsed laser deposition (PLD), resulting in smooth amorphous films as revealed by X-ray diffraction (XRD) and atomic force microscopy (AFM). By annealing at 600°C, still smooth epitaxial AlFe films are obtained exhibiting the B2 phase with the (110) direction parallel to the substrate normal and an in-plane orientation as given by AlFe[001]||Al₂O₃[11[`2]0]\mbox{AlFe}[001]\|\mbox{Al}_{2}\mbox{O}_{3}[11\bar{2}0]. While ferromagnetism is observed for the amorphous phase, the formation of the B2 structure is accompanied by paramagnetic behavior, confirming the high structural quality.     

Low-temperature growth of single-crystalline ZnO tubes on sapphire(0001) substrates

Single-crystalline ZnO tubes were grown on sapphire(0001) substrates by metalorganic chemical vapor deposition at 400 °C. The growth temperature was much lower than that (900–1100 °C) used in previous reports. The tubes were grown along the substrate normal and were characterized by hexagon-shaped cross sections. All of the tubes possessed the same epitaxial relationships with respect to the substrate. Growth pressure was found to play an important role in the formation of ZnO tubes. PACS 61.46.+w; 78.67.-n; 81.15.Gh     

Atypical grain boundaries in ZnO layers deposited on sapphire by rf magnetron sputtering on (0001) sapphire

The crystalline quality of ZnO is investigated, in thin films prepared by RF magnetron sputtering on c-plane sapphire. The ZnO layers exhibit a columnar growth and the average column diameter depends on the deposition temperature. Along the [] zone axis of sapphire, the diffraction pattern exhibits two zone axis patterns; the central rows belong to the two zones, with the 0002n spots clearly underlined by the overlap. On each part, the two inner rows belong to the [] zone and the next two to the [] zone. Therefore, the two main epitaxial relationships in mismatched growth of wurtzite structures coexist in these layers, and adjacent columns are rotated, with respect to one other, by 90 around the [0001] direction. In cross section observations, the interface between two grains is abrupt, but it is not easy to determine its atomic structure. Observations in planar view show that although the long range rotation between grains is in agreement with the theoretical epitaxial relationships, the local angles oscillate between 27 and 32. This discrepancy is explained by the formation of grain boundaries which are found to follow the coincidence site lattice rules which make them settle into minimal energy configurations.     

Band structure of Au layers on the Ru(0001) and graphene/Ru(0001) surfaces

The electronic structures of Au monolayers on the Ru(0001) and graphene-coated Ru(0001) surfaces have been calculated by DFT method using the supercell (repeated-slab) approach. The local densities of states (LDOS) and band structures of the monolayer and bilayer Au films adsorbed on the graphene/Ru(0001) and those of free hexagonal Au layers are found to be very similar. This result indicates that the monolayer graphene almost completely screens the Au layers from the Ru(0001) substrate surface, so that electronic properties of Au films adsorbed on graphene are determined predominantly by the electronic structure of the Au adlayers, essentially independent on the electronic structure of the substrate surface.     

Chemisorption studies on cobalt single crystal surfaces: I. Carbon monoxide on Co(0001)

The chemisorption of CO on Co(0001) and on a polycrystalline specimen has been studied by LEED, Auger spectroscopy, and thermal desorption measurements. Annealing of the polycrystal was found to result in a surface dominated by crystallites of (0001) orientation in the surface plane, along with a few (101̄2) oriented crystallites. CO adsorbs on the clean surface at 300 K with an initial sticking probability of 0.9 and the system follows precursor state kinetics. The saturation coverage under UHV conditions corresponds to a well-ordered (√3 × √3)R30° structure; with P_CO>5 × 10^-9 a uniform compression of the adlayer takes place and a (√7 × √7)R19.2° structure begins to form. Models are proposed for these two ordered phases which are in agreement with the observed relative coverage data and the appearance of the corresponding desorption spectra. The desorption enthalpy of CO at low coverages is 103 ± 8 kJmol^-1, and a fairly sharp fall in this enthalpy occurs for coverages $\text{>}\text{1}\text{3}$. In many respects, the system's behaviour closely resembles that of Ni(111)-CO. Oxygen contamination leads to the appearance of a strongly adsorbed CO state with a desorption enthalpy of ~170 kJmol^-1. This is reminiscent of a strongly adsorbed non-dissociated state of CO on Ru(101̄1) which occurs under similar conditions.     

Comparative study of adsorption characteristics of Cs on the GaN （0001） and GaN （0001） surfaces

The adsorption characteristics of Cs on GaN （0001） and GaN （0001） surfaces with a coverage from 1/4 to 1 monolayer have been investigated using the density functional theory with a plane-wave uttrasoft pseudopotential method based on first-principles calculations. The results show that the most stable position of the Cs adatom on the GaN （0001） surface is at the N-bridge site for 1/4 monolayer coverage. As the coverage of Cs atoms at the N-bridge site is increased, the adsorption energy reduces. As the Cs atoms achieve saturation, the adsorption is no longer stable when the coverage is 3/4 monolayer. The work function achieves its minimum value when the Cs adatom coverage is 2/4 monolayer, and then rises with Cs atomic coverage. The most stable position of Cs adatoms on the GaN （000i） surface is at H3 site for 1/4 monolayer coverage. As the Cs atomic coverage at H3 site is increased, the adsorption energy reduces, and the adsorption is still stable when the Cs adatom coverage is 1 monolayer. The work function reduces persistently, and does not rise with the increase of Cs coverage.     

Growth and structure of crystalline silica sheet on Ru(0001)

Thin SiO? films were grown on a Ru(0001) single crystal and studied by photoelectron spectroscopy, infrared spectroscopy and scanning probe microscopy. The experimental results in combination with density functional theory calculations provide compelling evidence for the formation of crystalline, double-layer sheet silica weakly bound to a metal substrate.     

斜切蓝宝石衬底MOCVD生长GaN薄膜的透射电镜研究

利用MOCVD技术在斜切角度为0.3°的c面蓝宝石衬底上生长了非故意掺杂 GaN 薄膜, 并采用透射电子显微镜对材料的质量和材料内部缺陷进行了分析. 研究发现斜切蓝宝石衬底上外延的GaN材料中,位错在距离衬底0.8 μm附近大量湮灭, 同时位错扎堆出现.基于上述现象, 提出了斜切衬底上GaN材料中位错的湮灭机制, 解释了斜切衬底能够提高GaN晶体质量的原因.     

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Single crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga₂O₃ is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga₂O₃ and the main epitaxial relationship should be and .      

Ordered step arrays on evaporated As (0001) vicinal surfaces

A computational procedure dealing with a one-dimensional epitaxial monolayer model was developed in part I. In this part it is extended and applied to the two-dimensional case, allowing for misfit along two perpendicular interfacial directions. The model employed differs slightly from that used by van der Merwe in that the overgrowth film is simulated by a plane of atoms linked to each other by elastic springs. This allows for an exact determination of the equilibrium boundary conditions. The results show (i) that the rectangular boundary edge is slightly deformed, lateral contractions occurring where the misfit dislocations intersect the boundary edge, (ii) that the dependence of stable structures on misfit is in good agreement with the analytical results of van der Merwe, (iii) that misfit dislocations are introduced alternately at the mutually perpendicular edges of a system having quadratic symmetry, (iv) that a segmented dependence of lowest energy on crystal size is obtained, one segment for each additional dislocation, (v) that a saw-toothed dependence of average strain on crystal size, in qualitative agreement with the experimental work of Vincent, results and (vi) that a fine structure in the energy curves results from discrete adatom peripheral growth.     

Spontaneous formation of indium-rich nanostructures on InGaN(0001) surfaces

We show how a nonlinear system that supports solitons can be driven to generate exact (regular) Cantor set fractals. As an example, we use numerical simulations to demonstrate the formation of Cantor set fractals by temporal optical solitons. This fractal formation occurs in a cascade of nonlinear optical fibers through the dynamical evolution from a single input soliton.     

Magnon-enhanced phonon damping at Gd(0001) and Tb(0001) surfaces using femtosecond time-resolved optical second-harmonic generation

Damping of coherent optical phonons is investigated by femtosecond time-resolved second-harmonic generation at Gd(0001) and Tb(0001) surfaces. At low temperature the damping rate increases monotonically with temperature, but close to the Curie point the damping rate is strongly reduced. We explain this behavior by phonon-magnon scattering originating from spin-orbit coupling proven by a larger effect for Tb than for Gd. Consideration of phonon-electron and phonon-phonon scattering shows that magnon-mediated damping is dominant almost up to the Curie temperature.     

Role of gallium wetting layer in high-quality ZnO growth on sapphire (0001) substrates

ZnO is a wide direct bandgap (Eg=3.37 eV at room temperature) II-VI compound semiconductor of wurtzite structure (a = 3.249 ? c = 5.207 ?. Compared to GaN and ZnS, ZnO has a larger exciton binding energy, ~60 meV (cf. ~25 meV for GaN and ~40 meV for ZnS), which is advantageous to realizing low-threshold excitonic lasers. Since optically pumped UV lasing of ZnO at room temperature was reported in 1997[1], much attention has been paid to the crystal quality improvement and p-type conduc…     

Novel stabilization mechanism on polar surfaces: ZnO(0001)-Zn

The (1x1) terminated (0001)-Zn surface of wurtzite ZnO was investigated with scanning tunneling microscopy. The surface is characterized by the presence of nanosized islands with a size-dependent shape and triangular holes with single-height, O-terminated step edges. It is proposed that the resulting overall decrease of the surface Zn concentration stabilizes this polar surface. Ab initio calculations of test geometries predict triangularly shaped reconstructions over a wide range of oxygen and hydrogen chemical potentials. The formation of these reconstructions appears to be electrostatically driven.     

A theoretical study of step edge geometry on sapphire(0001) and its effect on ZnO nucleation

Step-edge-induced nucleation plays a key role in controlling the growth of novel nanostructures and low-dimensional materials. However, it is difficult to experimentally determine the step edge structures of complex metal oxides. In this work, we present a detailed theoretical study of the stability of stoichiometric steps on sapphire(0001). Based on first-principles calculations and excess charge computation by Finnis’ approach, a pair of non-polar step edges are determined to be the most stable. By studying the adsorption characteristics of ZnO and combining previous works, we successfully explained how growth temperature and deposition rate affect the in-plane orientation of ZnO grown on sapphire(0001). The knowledge on the step edge structures and nucleation patterns would benefit the study on step-edge-guided nanostructure growth.