Electrical properties of MWCNT-composite (Se80Te20)100−xAgx (0 ≤ x ≤ 4) chalcogenide glasses

This article describes the preparation of multi-walled carbon nanotube (MWCNT) chalcogenide glass composite by the melt-quenching technique. MWCNT composite (Se₈₀Te₂₀)_100?xAg_x (0 ≤ x ≤ 4) bulk samples are characterized by the XRD, SEM and EDX. The electrical measurements were carried out in the temperature range of the 308-388 K. Cole–Cole plot has been used to determine the electrical conductivity at room temperature. It has been observed that MWCNT chalcogenide composite have higher value of electrical conductivity than pure glass. The results have been discussed on the basis of increased ionic conductivity (Ag⁺ ions) in MWCNT doped (Se₈₀Te₂₀)_100?xAg_x (0 ≤ x ≤ 4) bulk samples.     

Electrical and thermal properties of a-(Se70Te30)100−x(Se98Bi2)x (0⩽x⩽20) alloys

In electrical properties, the dc conductivity and photoconductivity measurements have been made in vacuum evaporated thin films of a-(Se₇₀Te₃₀)_100−x(Se₉₈Bi₂)_x system, in the temperature range (308–355 K). It has been observed that dc conductivity and activation energy depend on the Bi concentration. Photocurrent dependence on incident radiation has also been observed which follow the power law (I_ph∝F^γ). Transient photocurrent exhibits the non-exponential decay time. All these parameters show that the recombination within the localized states is predominant. In crystallization kinetics, the heating rate dependence of glass transition and crystallization temperatures is studied to calculate the activation energy for thermal relaxation and activation energy for crystallization. The composition dependence of the activation energy for thermal relaxation and activation energy for crystallization is discussed in terms of the structure of Se–Te–Bi glassy system.     

Pre-exponential factor for non-isothermal crystallization of glassy Se85− x Te15Sb x (0 ≤ x ≤ 10) alloys

We report observations of the Meyer–Neldel rule for the non-isothermal crystallization of glassy Se_{85? x} Te₁₅Sb _x (x =?0, 2, 4, 6, 8, 10) alloys. We found a strong co-relation between the pre-exponential factor K ₀ of the rate constant K(T) for crystallization and the activation energy of crystallization E _c. This indicates the presence of a compensation effect for the non-isothermal crystallization process in this glassy system. The composition dependence of the crystallization temperature T _c and the activation energy for crystallization E _c is discussed.     

Optical band gap and refractive index dispersion parameters of As x Se70Te30−x (0≤x≤30 at.%) amorphous films

Amorphous As _x Se₇₀Te_30?x thin films with (0≤x≤30 at.%) were deposited onto glass substrates by using thermal evaporation method. The transmission spectra T(λ) of the films at normal incidence were measured in the wavelength range 400–2500 nm. A straightforward analysis proposed by Swanepoel based on the use of the maxima and minima of the interference fringes has been used to drive the film thickness, d, the complex index of refraction, n, and the extinction coefficient, k. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model (WDD). Increasing As content is found to affect the refractive index and the extinction coefficient of the As _x Se₇₀Te_30?x films. With increasing As content the optical band gap increases while the refractive index decreases. The optical absorption is due to allowed indirect transition. The chemical bond approach has been applied successfully to interpret the increase of the optical gap with increasing As content.     

Compositional dependence of the optical properties of amorphous Se100– x Te x thin films

Thin films of amorphous Se_{100 –x} Te _x with different compositions (x = 10, 20, 30 and 40 at%) were deposited on glass substrates by thermal evaporation. Transmission spectra T(λ) of the films at normal incidence were obtained in the spectral region from 400 to 2500 nm. A straightforward analysis proposed by Swanepoel [J. Phys. E: Sci. Instrum. 17 896 (1984)], using of the maxima and minima of the interference fringes, was applied to derive the real and imaginary parts of the complex index of refraction plus film thickness. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple and DiDomenico model [Phys. Rev. B 3 1338 (1971)]. The optical band gap was determined from the spectral dependence of the absorption coefficient using the Tauc formula [in The Optical Properties of Solids, edited by F. Abeles (North Holland, Amsterdam, 1970), p. 227]. The refractive index increases and the optical band gap decreases with increasing tellurium content.     

Transport properties of the single-crystal La2−xBaxCuO4 (0≤x≤0.11)

We report on the temperature dependence of the in-plane electrical resistivity ρ_ab and the in-plane Hall coefficient R_H in various magnetic fields of the single-crystal La_2−xBa_xCuO₄ with x=0.083 and 0.11. In x=0.11, which is close to x=1/8, where the superconductivity is strongly suppressed, a clear jump in ρ_ab and a drop in R_H have been observed at T_d2∼53 K, where the structural phase transition between the orthorhombic mid-temperature and tetragonal low-temperature phases occurs. Moreover, a sign reversal of R_H has been observed below ∼25 K and the magnitude of the sign reversal increases with increasing magnetic field. In x=0.083, on the other hand, there is neither jump in ρ_ab nor drop in R_H at T_d2, and also no sign reversal in R_H at low temperatures even in magnetic fields up to 9 T. In conclusion, there is no doubt that a static stripe order of holes and spins, observed in La_1.6−xNd_0.4Sr_xCuO₄ with x∼1/8, is formed below T_d2 also in La_2−xBa_xCuO₄ with x∼1/8. The R_H in the stripe-ordered state has a negative value, which is consistent with the recent theory by Prelovšek et al.     

Fine structure and magnetism of bulk Zn1 − x Cr x Se single-crystal cubic compounds (0 ≤ x ≤ 0.045)

The character of structural and magnetic features of the cubic lattice of bulk Zn_{1 ? x} Cr _x Se crystals (0 ≤ x ≤ 0.045) has been investigated using thermal neutron diffraction and magnetic measurements. It has been found that the diffraction scans of doped crystals contain effects of nuclear diffuse scattering caused by local static atomic displacements in the face-centered cubic (fcc) lattice. Results of magnetic measurements of doped crystals indicate the presence of weak antiferromagnetic correlations, which are a consequence of structural features of these compounds.     

Structural and some electrophysical properties of the solid solutions Si1 − x Sn x (0 ≤ x ≤ 0.04)

Films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) on Si substrates have been grown by liquid phase epitaxy. The structural features of the films have been investigated using X-ray diffraction. The temperature behavior of current-voltage characteristics and the spectral dependence of the photocurrent for the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have been analyzed. The grown epitaxial films of the solid solutions Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) have a perfect single-crystal structure with a (111) orientation and a subgrain size of 60 nm. In the epitaxial films at the Si-SiO₂ interfaces between silicon subgrains and SiO₂ nanocrystals, where there are many sites with a high potential, the Sn ions with a high probability substitute for the Si ions and encourage the formation of Sn nanocrystals with different orientations and, as follows from the analysis of the X-ray diffraction patterns, with different sizes: 8 nm (for the (101) orientation) and 12 nm (for the (200) orientation). The current-voltage characteristics of the heterostructures p-Si-n-Si_{1 ? x} Sn _x (0 ≤ x ≤ 0.04) are described by the exponential law J = J ₀exp(qV/ckT) at low voltages (V < 0.2 V) and the square law J = (9qμ _p τ _p μ _n N _d /8d ³)V ² at high voltages (V > 1 V). These results have been explained by the drift mechanism of charge carrier transport in the electrical resistance relaxation mode.     

Electrical transport properties of YCo_(1-x)Mn_xO_3(0 ≤x≤ 0.2)prepared by sol–gel process

Mn substitution compounds YCo1-xMnx O3(0 ≤ x ≤ 0.2) are synthesized by using the sol–gel process. Electrical transport properties of YCo1-xMnx O3 are investigated in the temperature range from 200 K to 780 K. The experimental results show that after Mn substitution the electrical resistivity of YCo1-xMnx O3 first increases, then decreases, which is due to the electrons introduced by Mn doping. The sign of Seebeck coefficient for YCo1-xMnx O3(x = 0) is positive or negative, which is also proved by the Hall coefficient measurement. Moreover, at about room temperature, the Seebeck coefficient of YCo1-xMnx O3 with 1% doping Mn content becomes a negative value, whose absolute value is maximum;furthermore, the absolute value gradually decreases with increasing the Mn substitution content, which can be explained by the double carrier model.     

Optical Absorption in (Pb0.78Sn0.22)1–x In x Te

The spectral dependences of the absorption coefficient are investigated in (Pb_0.78Sn_0.22)_1–x In _x Te at T = 300 K, with the content of indium in the mix x = 0.001–0.050. Two additional-absorption lines exhibiting sharp red margins are found in the () spectra from all the specimens examined. It is shown that they are associated with the optical ionization of the sites, whose energy levels E ₀ and E ₁are located in the forbidden band. It is established that the energy parameters of the E ₀ and E ₁ bands (position of the maxima of the state density function and the half width) do not depend on x. It is demonstrated that the E ₀ band is accounted for by indium located in the sublattice sites. It is found out that the indium concentration in the sites differs from its content in the mix. No changes testifying to the hopping conduction via the impurity states of indium are found in the energy spectrum from (Pb_0.78Sn_0.22)_1–x In _x Te.     

Features of magnetic properties of La x MnO3 + δ (0.815 ≤ x ≤ 1.0)

Magnetic and resonance studies of the system of polycrystalline samples of self-doped manganites La _x MnO_{3 + δ} (x = 0.815, 0.90, 0.94, 0.97, and 1.0) have been performed in a temperature range of 77–300 K. According to ⁵⁵Mn NMR data, all samples contain a ferromagnetic phase at 77 K. As the defect density increases (x changes from 1.0 to 0.815), samples become more magnetically ordered. In this case, the ferromagnetic state of the system gradually changes from a mixed state in which both ferromagnetic insulating (basic) and ferromagnetic metal (for x = 0.97 and 1.0) phases coexist to only the ferromagnetic metal state (for x = 0.815 and 0.90). It has been shown that both ferromagnetic metal and ferromagnetic insulating phases are inhomogeneous, and either phase consists of two phases with different dynamics of nuclear spins and different Curie temperatures. The diagram of the magnetic phase state of the La _x MnO_{3 + δ} system (x = 0.815, 0.90, 0.94, 0.97, 1.0) has been constructed for a temperature range of 120–240 K and Mn⁴⁺ contents of 12–30%.     

Pre-exponential factor for the crystallization of glassy Se80Te20 and Se75Te20M5 alloys: applicability of Meyer–Neldel rule

The Meyer–Neldel rule or MN rule (also known as compensation effect) is an empirical law known since 1937. This rule is observed in wide range of phenomena in physics, chemistry, biology and electronics. Many activated phenomena, including solid state diffusion in crystals and polymers, dielectric relaxation, conduction and thermally stimulated processes in polymers, and electronic conduction in amorphous semiconductors obey the MN rule. In the present article, we report the MN rule in the non-isothermal crystallization in glassy Se₈₀Te₂₀ and Se₇₅Te₂₀M₅ (M = Ag, Cd, In, Sb) alloys. We have observed MN rule between pre-exponential factor K _o and activation energy of crystallization E _c in the present case for thermally activated non-isothermal crystallization.     

Structural and electronic properties of InNxP1-x alloy in full range (0 ≤ x ≤1)

We have performed first-principles method to investigate structural and electronic properties of InN_xP_1?x ternary semiconductor alloy in full range (0 ≤ x ≤ 1) using density functional theory. We have used modified Becke–Johnson potential to obtain accurate band gap results. From the electronic band structure calculation we have found that InN_xP_1?x become metal between 47 and 80% of nitrogen concentration. Additional to our band gap calculations, we have also used the band anticrossing model. The band anticrossing model supplies a simple, analytical expression to calculate the physical properties, such as the electronic and optical properties, of III-N_xV_1?x alloys. The knowledge of the electron density of states is required to understand and clarify some properties of materials such as the band structures, bonding character and dielectric function. In order to have a deeper understanding of these properties of the studied materials, the total and partial density of states has been calculated. Finally, we have calculated the total bowing parameter b of studied alloys, together with three contributions b_VD, b_CE, and b_SR due to volume deformation, different atomic electron negativities and structural relaxation, respectively.     

Magnetotransmission of unpolarized infrared radiation in Hg1 − x Cd x Cr2Se4 (0 ≤ x ≤ 1) single crystals studied using the voigt geometry

The features characterizing the behavior of magnetotransmission in Hg_{1 ? x} Cd _x Cr₂Se₄ single crystals are studied using natural light in the infrared spectral range. The relation between the changes in the magneto-optical properties and in the electron band structure is found. It is shown that the most significant changes in the magnetotransmission spectrum and the band structure occur within the 0.1 < x < 0.25 range.     

Calorimetric study of Te15(Se100− x Bi x )85 glassy alloys using differential thermal analysis

A calorimetric study of Te₁₅(Se_{100? x} Bi _x )₈₅ glassy alloys (x = 0, 1, 2, 3 and 4 at. %) is reported. Differential thermal analysis (DTA) was performed at heating rates of 10, 15, 20 and 25 K/min. The spectra were used to determine the glass transition temperature, T_g , the crystallisation temperature, T_c and the melting temperature, T_m . All these parameters shift to higher values with increasing heating rate, β. The glass transition temperature and the melting temperature increase, and the crystallisation temperature decreases, with increase in the Bi content, x. The activation energy of the glass transition, E_g , was evaluated using the Moynihan and Kissinger methods. The activation energy of crystallisation, E_c , was calculated using modified Kissinger and Matusita approaches. The thermal stability of these glasses has been studied and found to decrease with increase in Bi content. The results obtained are explained on the basis of a chemically ordered network model and an average coordination number.     

Structure and electrical properties of thin-film nanoheterogeneous Pd9(Cu x (In31Y4O65)100 − x )91 composites

A heterophase Pd₉(Cu _x (In₃₁Y₄O₆₅)_{100 ? x} )₉₁ system is obtained in a wide range of concentrations via the ion-beam sputtering of a melted In-Y-O target with Pd and Cu plates. It is established that the change in the films’ electrical resistance during heat treatment is due to crystallization of the heterogeneous structure and oxidation of the metal phase. The effect of the copper concentration on the change in the films’ electrical resistance upon hydrogen chemisorption is demonstrated.     

Synthesis and native defectivity of Zn1−x V x O (0 ≤ x ≤ 0.03) photocatalysts

Nanodisperse solid solutions Zn_1?x V _x O (0 ≤ x ≤ 0.03) with high numbers of defects in an oxygen sublattice are synthesized via the precursor technique. ESR analysis reveals that V _O ⁺ oxygen vacancies are the main defects of the oxygen sublattice in the Zn_1?x V _x O structure. The Zn_1?x V _x O (0 < x ≤ 0.15) solid solutions exhibit high photocatalytic activity during hydroquinone oxidation in water upon irradiation with UV and visible light.     

Composition-related structural,thermal and mechanical properties of Ba1−xSrxTiO3 ceramics (0 ≤ x ≤ 0.4)

The Ba_1?xSr_xTiO₃ (BST) ceramics were prepared by conventional ceramic method. The crystalline structure and morphology were studied by X-ray diffraction and scanning electron microscopy, respectively. Experimental results show that increase of sintering temperature leads to an uncontrolled precipitating of the phase with a lower content of Ti. The dielectric constant and specific heat as a function of composition and temperature were investigated. The increasing concentration of Sr ions leads to a shift of the Curie point below room temperature. To determine the elastic constants (the Young's modulus E, the shear modulus G and the Poisson's ratio v) of BST, a method of measurement of the longitudinal (ν_L) and transverse (ν_T) ultrasonic wave velocities for this type of material was developed. The structural, dielectric and mechanical properties of BST ceramics were discussed in terms of microstructure and chemical composition