Dielectric behavior and low temperature phase transition in NH4IO3

The electrical properties namely ac conductivity σ(ω,?T) and the complex dielectric permittivity (ε*) are measured at selected frequencies (5–100?kHz) as function of temperature (95?K?T?4IO₃. The ferroelectric hysteresis loops and the X-ray diffraction pattern are also measured. The analysis of the data indicates that the compound undergoes a structural phase transition at ～103?K and the behavior of σ(ω,?T) obeys the power law. The trend of the temperature dependence of the angular frequency exponent s (0?s?4IO₃; (2) the data indicate that the compound undergoes a structural phase transition at 103?K; (3) the originality of this transition has been confirmed by X-ray diffraction; (4) no evidence for the existence of a ferroelectric transition at 103?K as mentioned earlier; and (5) the quantum mechanical tunneling is proposed as the main mechanism of the electric conduction.     

Surface scattering of electrons on copper whiskers and its influence on the electrical resistivity at 4.2 K

The effect of specimen size on the electrical resistivity at 4.2 K of copper whiskers having transverse dimensions in the order of the electron mean-free path was measured. The experimental data are interpreted by means of a modified Nordheim formula adapted to the exact theory of Dingle. Assuming for copper the value of the productQ ₀·λ obtained from the free electron model a specularity parameterp for the surface scattering of conduction electrons is deduced from the diameter dependence of the sample resistivity. Values ofp=0.45 (up to 0.66 in an individual case) andp=0.18 are calculated exhibiting that significant specular reflection is present. Differences in the amount of specular reflection appear to arise from differences in the microscopically observed surface conditions of the whiskers.     

Enhanced temperature-independent magnetoresistance below the metal-insulator transition temperature of epitaxial La0.2Nd0.4Ca0.4MnO3 thin films

Epitaxial La_0.2Nd_0.4Ca_0.4MnO₃ thin films have been deposited at 800°C on LaAlO₃ substrate using pulsed laser deposition technique. The structural and magnetotransport properties of the films have been studied. The sharp peak in the temperature dependence of the resistance corresponding to metal-to-insulator transition (T _p) has been observed at a temperature of T _p=82 K, 97 K and 110 K for 0 Oe, 20 kOe and 40 kOe magnetic fields, respectively. The film exhibits a large nearly temperature-independent magnetoresistance around 99% in the temperature regime below T _p. The zero field-cooled (ZFC) and field-cooled (FC) magnetization data at 50 Oe shows irreversibility between the ZFC and FC close to the ferromagnetic transition temperature T _c=250 K. The ZFC temperature data of the film displays ferromagnetic behavior for higher temperature regime T _c=250 K>T>T _p=82 K, and a decrease in magnetization with decreasing temperature up to 5 K below 82 K exhibiting a sort of antiferromagnetic behavior in the low temperature regime (T<82 K=T _p=T _N).     

Thermodynamic stability and phase behaviour of a liquid crystalline material: a theoretical model at molecular level

This article describes the thermodynamic stability and phase behaviour of a liquid crystalline material p-n-hexyloxybenzylidene-p-toluidine (6OBT) at a molecular level. The atomic net charge and dipole moment at each atomic centre have been evaluated using the complete neglect differential overlap (CNDO/2) method. The modified Rayleigh–Schrodinger perturbation method along with multicentred-multipole expansion method has been employed to evaluate the long-range intermolecular interactions, while a ‘6-exp’ potential function has been assumed for the short-range interactions. The total interaction energy values obtained through these computations have been used to calculate the probability of each configuration at room temperature (300?K), nematic–isotropic transition temperature (346.9?K) and above transition temperature (400?K) using the Maxwell–Boltzmann formula. Further, the Helmholtz free energy and entropy of each configuration has been computed during the different modes of interactions. An attempt has been made to understand the phase behaviour and stability of the molecule based on thermodynamic parameters introduced in this article.     

Effect of laser irradiation on the electrical properties of dysprosium doped LiCo-Ferrite

The effect of laser irradiation on the electrical properties of Li_0.5+z Co _z Dy _x Fe_2.5?2z?x O₄ ferrite (0.0 ≤ x ≤ 0.2, z = 0.1) has been studied in the temperature range 300 K ≤ T ≤ 750 K at frequencies of 10 kHz?5 MHz, using a LIMO-IR laser diode, at a wavelength of 808 nm. It was found that laser irradiation increases the polarization, the resistivity and the paramagnetic region. As the result of electronic rearrangement and lattice defects, small polorons and clusters were created. The doping of LiCo-Ferrite by Dy³⁺ increases both the AC and DC resistance of the investigated material. The variation of the AC and DC resistance with the Dy-content (x) obeys the following correlations R _ac/100 = 50x ²+4x+0.005 and R _dc/1000 = 31x ²+0.099x+0.09, respectively. A peculiar behaviour was obtained for the sample with Dy-content x = 0.075, as the resistance notably decreases. The applicable result is that laser irradiation increases the resistance of LiCo-ferrite by about 17% while its doping by dysprosium at x = 0.15 increases the resistance by about 23%. Its value is nearly stable for the temperature range from 340 to 480 K.     

A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperature-dependent electrical characterizations

Cu₂NiSnS₄ nanorods were synthesized by the usage of hot-injection technique and used as interlayer between the p-Si and Al metal in order to examine their behavior against the temperature and frequency changes. The current-voltage measurements were performed in 80–300 K temperature range with 20 K steps. The X-Ray Diffraction (XRD) was used to prove the crystal structure of the synthesized Cu₂NiSnS₄ nanorods. Some crucial device parameters such as barrier height, series resistance and ideality factor values were calculated, and the obtained values were compared with other studies in the literature. It has been seen that the calculated parameters of the prepared device are strongly dependent on temperature changes. Besides, the capacitor behavior of fabricated device was investigated depending on the frequency and voltage changes. The experimental results indicated that the prepared device with Cu₂NiSnS₄ nanorods interlayer could be utilized in the electronic technology, especially applications in wide temperature range.     

Electrical relaxation in proton conductor composites based on (NH4)H2PO4/TiO2

We report on electrical relaxation measurements of (1 − x)NH₄H₂PO₄-xTiO₂ (x = 0.1) composites by admittance spectroscopy, in the 40-Hz–5-MHz frequency range and at temperatures between 303 and 563 K. Simultaneous thermal and electrical measurements on the composites identify a stable crystalline phase between 373 and 463 K. The real part of the conductivity, σ’, shows a power-law frequency dependence below 523 K, which is well described by Jonscher’s expression , where σ ₀ is the dc conductivity, ω _p /2π = f _p is a characteristic relaxation frequency, and n is a fractional exponent between 0 and 1. Both σ ₀ and f _p are thermally activated with nearly the same activation energy in the II region, indicating that the dispersive conductivity originates from the migration of protons. However, activation energies decrease from 0.55 to 0.35 eV and n increases toward 1.0, as the concentration of TiO₂ nanoparticles increases, thus, enhancing cooperative correlation among moving ions. The highest dc conductivity is obtained for the composite x = 0.05 concentration, with values above room temperature about three orders of magnitude higher than that of crystalline NH₄H₂PO₄ (ADP), reaching values on the order of 0.1 (Ω cm)^− 1 above 543 K.     

Thermochemistry of diphenic anhydride. A combined experimental and theoretical study

The standard (p°?=?0.1?MPa) molar enthalpy of formation for solid and gaseous diphenic anhydride (2,2′-biphenyldicarboxylic anhydride, dibenz[c,e]oxepin-5,7-dione) was derived from the standard molar enthalpy of combustion, in oxygen, at T?=?298.15?K, measured by static bomb combustion calorimetry, and the standard molar enthalpy of sublimation, at T?=?298.15?K, measured by Calvet microcalorimetry: ?(258.4?±?4.9) kJ?mol^?1. In addition, ab initio and density functional theory calculations have been performed at a variety of levels. The degree of aromaticity of diphenic anhydride is discussed in the context of other oxygen-containing (ring and keto) heterocycles and related carbocycles: this species is surprisingly destabilized.     

Fabrication of p-ZnO:ZrN thin films by RF magnetron sputtering

An attempt has been made to fabricate p-ZnO thin films from the ZrN mixed ZnO targets by RF magnetron sputtering. The targets of different ZrN concentrations (0, 1, 2, and 4?mol%) have been prepared by solid-state reaction route. The ZrN-codoped ZnO films grown on semi-insulating Si (100) substrates have been characterized by X-ray diffraction (XRD), photoluminescence (PL), Hall effect measurement, time-of-flight secondary ion mass spectrometer (ToF-SIMS), and atomic force microscopy (AFM). XRD studies reveal that all films are oriented along (002) plane. The Hall measurements showed p-conductivity for 1 and 2?mol% ZrN-codoped ZnO films. Further, it has been found that 1?mol% ZrN-codoped film has low resistivity (7.5?×?10^?2?Ω?cm) and considerable hole concentration (8.2?×?10¹⁸?cm^?3) by optimum incorporation of nitrogen due to best codoping. The red shift in near-band-edge emission observed from PL well acknowledged the p-conduction in 1 and 2?mol% ZrN-codoped ZnO film. The incorporation of N and Zr atoms in the ZnO matrix has been confirmed by ToF-SIMS analysis. The increase in peak to valley roughness (R _pv) with increase of doping concentration has been observed from AFM analysis. ZnO homojunction has also been fabricated with the best codoped p-ZnO film and it showed typical rectification behavior of a diode. The junction parameters have also been determined for the fabricated homojunction.     

Electrical properties of simultaneously evaporated Sb-Te thin films

Thin films of Sb-Te of varying compositions have been deposited on glass substrates following the three temperature method. The dc conductivity (σ), Hall coefficient (R _H) and thermoelectric power (α) of annealed samples have been measured in the temperature range 300–470°K. Films exhibit metallic as well as semiconducting characteristics withp-type conductivity. The properties are found to be dependent on composition and thickness of the film. Paper presented at the Int. Conf. and Intensive Tutorial Course on Semiconductor Materials, New Delhi, India, December 8–16, 1988.     

The studies of high-temperature and short-time annealing,phase transition process,and magnetic property for LaFe11.7Si1.3 compound

The high-temperature phase transition is analyzed according to the DSC of as-cast LaFe_11.7 Si_1.3 compound and the X-ray patterns of LaFe_11.7Si_1.3 compounds prepared by high-temperature and short-time annealing. Large amount of 1:13 phase begins to appear in LaFe_11.7Si_1.3 compound annealed near the melting point of LaFeSi phase (about 1422?K). When the annealing temperature is close to the temperature of peritectic reaction (about 1497?K), the speed of 1:13 phase formation is the fastest. The phase relation and microstructure of the LaFe_11.7Si_1.3 compounds annealed at 1523?K (5?h), 1373?K (2?h)?+?1523?K (5?h), and 1523?K (7?h) +1373?K (2?h) show that longer time annealing near peritectic reaction is helpful to decrease the impurity phases. For studying the influence of different high-temperature and short-time annealing on magnetic property, the Curie temperature, thermal, and magnetic hystereses, and the magnetocaloric effect of LaFe_11.7Si_1.3 compound annealed at three different temperatures are also investigated. Three compounds all keep the first order of magnetic transition behavior. The maximal magnetic entropy change ΔS_M (T, H) of the samples is 12.9, 16.04, and 23.8?J?kg^?1?K^?1 under a magnetic field of 0–2?T, respectively.     

Electrical, galvanomagnetic, and thermoelectric properties of PbSe in the void sublattice of opal

A study of transport phenomena, namely, electrical resistivity, thermopower, Hall coefficient, and magnetoresistance of p PbSe synthesized in opal voids has been carried out in the 4–300 K range. The parameters of the semiconducting material have been determined at different void filling levels. An anomalous behavior of the hole mobility associated with surface scattering from insulating opal-matrix walls has been observed. Fiz. Tverd. Tela (St. Petersburg) 40, 781–783 (April 1998)     

Kinetics and mechanism of the reaction of an arenediazonium ion with hydrophilic aminocarboxylic acids in aqueous buffered solution

The reaction of 4‐nitrobenzenediazonium ion, 4NBD, with the aminocarboxylic acids (AA) glycine and serine was studied under acidic conditions by using Linear Sweep Voltammetry (LSV), which allows simultaneous monitoring of 4NBD loss and product formation. Voltammograms of the reaction mixture are complex, showing up to five reduction peaks. The reduction peaks at E_p = ?0.5 and ?1.0 V, not detected in the absence of AA, are associated to products formed in the course of the reaction. The variation of their peak current, i_p, with time shows a complex behavior; that of i_p (E_p = ?1.0 V) follows a biphasic profile with i_p increasing with time up to a maximum after which a decrease is detected, suggestive of formation and subsequent decomposition of a transient intermediate, meanwhile i_p (E_p = ?0.5 V) increases with time after an induction period. The peaks at E_p = ?0.1 and ?0.8 V are associated to the reduction of the diazonium group of 4NBD and, in the presence of AA ([AA] >>> [4NBD]), their peak currents decrease exponentially with time following clean first‐order kinetics for more than 3t_1/2. The variation of k_obs with [AA] at a given pH is linear with an intercept equal to zero and that of log(k_obs) with pH at constant [AA] is also linear. Kinetic evidence is consistent with a reaction mechanism involving an irreversible, rate‐limiting bimolecular step which leads to the formation of an unstable triazene, which further decomposes yielding 4‐nitroaniline among other reaction products. Copyright © 2007 John Wiley & Sons, Ltd.     

Temperature‐dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP‐MOCVD have been studied by means of deep ultraviolet time‐integrated photoluminescence (PL) and time‐resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV‐AlGaN/AlGaN MQWs PL emission (E_p) exhibits a similarly anti‐S‐shaped behavior (blueshift – accelerated redshift – decelerated redshift): E_p increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the E_p redshift tends towards zero. This temperature‐induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Electrical and interface characteristics of nanocrystalline n-Zn0.5Cd0.5S/p-Cu2S heterojunction structure prepared by dip coating

Nanocrystalline of n-Zn_0.5Cd_0.5S/p-Cu₂S heterojunctions were successfully prepared by the dip coating method. The surface morphology and the composition analysis were made by scanning electron microscopy (SEM) and energy dispersive x-ray (EDX) technique, respectively. Temperature dependent current–voltage characteristics of the heterojunctions were measured in the temperature range 300–400 K with a step of 25 K. The current–voltage (I–V) characteristics exhibit electrical rectification behavior. The zero bias barrier height (Φ_B0) and the ideality factor (n) are affected by temperature. Interface states at the n-Zn_0.5Cd_0.5S/p-Cu₂S heterojunction play a crucial role in determining the electrical characteristics of the heterojunction. The high value of n can be ascribed to the presence of an interfacial layer. The energy distribution profile of the density of interface states (N_ss) was extracted from the forward bias I–V measurements using the width of the depletion region deduced from the capacitance -voltage characteristics at high frequency (1MHz).     

Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27?GPa and 900?K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2?GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa)?=?22.6???0.0014?×?T (K).     

Thermal conductivity of crystalline fullerite C60 in the simple cubic phase

The behavior of the thermal conductivity k(T) of bulk faceted fullerite C₆₀ crystals is investigated at temperatures T=8–220 K. The samples are prepared by the gas-transport method from pure C₆₀, containing less than 0.01% impurities. It is found that as the temperature decreases, the thermal conductivity of the crystal increases, reaches a maximum at T=15–20 K, and drops by a factor of ∼2, proportional to the change in the specific heat, on cooling to 8 K. The effective phonon mean free path λ _p, estimated from the thermal conductivity and known from the published values of the specific heat of fullerite, is comparable to the lattice constant of the crystal λ _p∼d=1.4 nm at temperatures T>200 K and reaches values λ_p∼50d at T<15 K, i.e., the maximum phonon ranges are limited by scattering on defects in the volume of the sample in the simple cubic phase. In the range T=25−75 K the observed temperature dependence k(T) can be described by the expression k(T)∼exp(Θ/bT), characteristic for the behavior of the thermal conductivity of perfect nonconducting crystals at temperatures below the Debye temperature Θ (Θ=80 K in fullerite), where umklapp phonon-phonon scattering processes predominate in the volume of the sample. Pis’ma Zh. éksp. Teor. Fiz. 65, No. 8, 651–656 (25 April 1997)     

Proton conductivity and ferroelectric phase transition in hydrogen-bonded ferroelectric NH4IO3

We report on the ac dielectric permittivity (ε) and the electric conductivity (σ_ω), as function of the temperature 300?K?T4IO₃. The main feature of our measured parameters is that, the compound undergoes a ferroelectric phase transition of an improper character, at (368?±?1)K from a high temperature paraelectric phase I (Pm2₁ b) to a low temperature ferroelectric phase II (Pc21n). The electric conduction seems to be protonic. The frequency dependent conductivity has a linear response following the universal power law (σ_{( ω )}?=?A(T)ω ^{s (T)}). The temperature dependence of the frequency exponent s suggests the existence of two types of conduction mechanisms.     

Thermomagnetic hysteresis and electrical transport in amorphous films

We report resistivity and magnetization measurements on an amorphous Ni₇₄Mn₂₄Pt₂ thin film in the temperature range of 3–300 K. Two significant features are apparent in both the magnetic susceptibility and electrical resistivity. A low-temperature (low-T) anomaly is observed at about 40 K, where a cusp appears in the resistivity, while a concomitant step-like increase in zero-field-cooled (ZFC) magnetization (M) appears with increasing temperature. The low-T anomaly is attributed to a crossover from a pure re-entrant spin-glass within individual domains to a mixed ferro-spin-glass regime at lower temperatures. By contrast, the high-temperature (high-T) anomaly, signaled by the appearance of hysteresis below 250 K, corresponds to the freezing of transverse spins in individual domains acting independently. Between the low-T and high-T anomalies a small but discernable magnetic hysteresis is observed for warming vs. cooling in the field-cooled (FC) case. This behavior clearly indicates the presence of domain structure in the sample, while the disappearance of this hysteresis at lower temperatures indicates the complete freezing of the spin orientation of these domains. According to these results, we have divided the magnetic state of this sample into three regions: at temperatures above 250 K, the sample behaves like a soft ferromagnet, exhibiting M vs. H loops with very small hysteresis (less than 5 Oe). As the temperature is lowered into the intermediate region (the range 40–250 K), spins become frozen randomly and progressively within the individual domains. These domains behave independently, rather than as a cooperative behavior of the sample. Weak irreversibility sets in, indicating the onset of transverse spin freezing within the domains. At temperatures below 40 K, the M vs. H loops exhibit larger hysteresis, for both the ZFC and FC cases, as in a pure spin-glass. We have also demonstrated giant noise in the resistivity at temperatures just below 250 K. Such noise can originate from fluctuations of the domains near the film surface because of competing effective bulk and surface anisotropy fields. The large observed amplitude may be explained by means of a large ferromagnetic anisotropy in the resistivity due to the large spin–orbit effect seen in NiMn systems. Finally, the low-T peak in the resistivity has been analyzed using Fisher and Langer's expression based on the Friedel Model proposed for critical transitions in transition metals (s–d systems). The fitted results are in satisfactory agreement with the predictions of this model.