位移损伤剂量法评估空间GaAs/Ge太阳电池辐照损伤过程

本文针对GaAs/Ge太阳电池,利用位移损伤剂量法研究了其在轨服役条件下的性能退化行为.首先在地面模拟辐照环境中,试验获得了在不同能量的电子和质子辐照下的电池性能随辐照注量的退化行为.基于上述实验结果以及计算获得的带电粒子在电池中的非电离能量损失(NIEL)获得了不同能量电子辐照位移损伤的等效指数n为1.7,电子损伤剂量转化为质子损伤剂量等效系数为5.2,并进一步建立了电池性能随位移损伤剂量的退化方程.利用该方法对国产GaAs/Ge太阳电池在500,22000和36000 km轨道带电粒子辐 关键词： GaAs/Ge太阳电池 辐照损伤 带电粒子 位移损伤剂量     

Accurate analytic presentation of solution for the spiked harmonic oscillator problem

High precision approximate analytic expressions of the ground state energies and wave functions for the spiked harmonic oscillator are found by first casting the correspondent Schrödinger equation into the nonlinear Riccati form and then solving that nonlinear equation analytically in the first iteration of the quasilinearization method (QLM). In the QLM the nonlinear differential equation is treated by approximating the nonlinear terms with a sequence of linear expressions. The QLM is iterative but not perturbative and gives stable solutions to nonlinear problems without depending on the existence of a smallness parameter. The choice of zero iteration is based on general features of exact solutions near the boundaries. Comparison of our approximate analytic expressions for binding energies and wave functions with the exact numerical solutions demonstrates their high accuracy in the wide range of parameters. The accuracy ranging between 10⁻³ and 10⁻⁷ for the energies and, correspondingly, 10⁻² and 10⁻⁷ for the wave functions in the regions, where they are not extremely small is reached. The derived formulas enable one to make accurate analytical estimates of how variation of different interactions parameters affects the correspondent physical systems.     

Energy and Mass Distributions of Induced-Fission of ^197Au Nucleus by 29 MeV Protons

A thin target of ^197Au is bombarded with 29 MeV protons from the cyclotron at Department of Nuclear Research Centre for Agriculture and Medicine. Correlated energies of fission-fragment pairs are measured with silicon surface-barrier detectors and their time of flights is made using a spectrometry pair. The fission cross section, fragment mass distribution, and total kinetic energy distribution of the fission fragments are measured in our experiment. The results are also compared with the previous works and good agreements are found.     

质子辐射损伤对单结GaAs/Ge太阳电池暗特性参数的影响

基于p-n结暗特性双指数模型,对经质子辐射后的单结GaAs/Ge太阳电池的暗特性I-V曲线进行数值拟合,确定了单结GaAs/Ge太阳电池在辐射前后的四个暗特性特征参数,即串联电阻R_s、并联电阻R_(sh)、扩散电流I_(s1)和复合电流I_(s2).研究结果表明,质子辐射后单结GaAs/Ge太阳电池的R_s,R_(sh),I_(s1)和I_(s2)四个暗特性参数均发生显著变化.经低能质子辐射后,单结GaAs/Ge太阳电池的R_(sh)随位移损伤剂量的增加而减小,而R_s,I_(s1)和I_(s2)三个参数随位移损伤剂量的增加而增大,其中串联电阻随位移损伤剂量线性增加而与辐射质子能量无关.理论分析表明,上述参数的变化与质子辐射损伤区域分布有关.基区和发射区的损伤主要引起单结电池串联电阻和扩散电流的增加;结区的损伤导致并联电阻减小,复合电流增大.     

Photoconductivity of erbium-doped germanium

We have applied the technique of Photo Thermal Ionization Spectroscopy (PTIS) to the study of an erbium-doped p-Ge epitaxial layer, grown by MBE on an undoped n-type germanium substrate. The Er-doped Ge layer shows continuum photoconductivity response in the far-infrared region extending from 70 cm^–1 to 900 cm^–1. This type of epitaxial Er-doped Ge layers is a potentially attractive system for photoconductivity detectors of far-infrared radiation. Below 900 cm^–1 three acceptor-like charged states can be distinguished with ionization energies of 9, 26.6 and 50 meV. Additionally, a study of the photoconductive response of the same sample for radiation from 1000 cm^–1 to 10000 cm^–1, i.e., for radiation energies well inside the forbidden gap to energies above it, shows a wealth of levels, some of which have previously been associated with erbium.On leave from: Instituto de Física, Universidad Autónoma de Puebla, Puebla, México     

Exactly solvable associated Lamé potentials and supersymmetric transformations

A systematic procedure to derive exact solutions of the associated Lamé equation for an arbitrary value of the energy is presented. Supersymmetric transformations in which the seed solutions have factorization energies inside the gaps are used to generate new exactly solvable potentials; some of them exhibit an interesting property of periodicity defects.     

Perturbed Coulomb potentials in the Klein-Gordon equation via the asymptotic iteration method

The asymptotic iteration method is used to construct the exact energy eigenvalues for a Lorentz vector or a Lorentz scalar, and an equally mixed Lorentz vector and Lorentz scalar Coulombic potentials. Highly accurate and rapidly converging ground-state energies for Lorentz vector Coulomb with a Lorentz vector or a Lorentz scalar linear potential, , respectively, are obtained.     

Dependence of Nucleon and Pion-Induced Fission Cross Sections on the Level Density Parameter in the Cascade-Exciton Model

A new method is used to compute the fission cross sections in which a change of the ratio of the level density parameter in fission to neutron emission channels is taken into account with the change of the incident energy of the projectile. It is shown that fission cross sections induced by nucleons and pions depend on the ratio of the level density parameter in the fission and evaporation modes, i,e. af /an, respectively. We are unable to describe well the cross sections for fission without using this new method. The computed values exhibit reasonable agreement with the experimental data found in the literature across a wide range of beam energies.     

Ge掺杂对InI导电性能影响的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波超软赝势方法,在相同环境条件下对不同浓度Ge掺杂的In I导电性能进行了研究.建立了由不同浓度的Ge原子替代In原子的In1-x Ge x I(x=0,0.125,0.25)模型.对低温下高掺杂Ge原子的In1-x Ge x I半导体的优化参数、总态密度、能带结构进行了计算.结果表明:Ge的掺入使In1-x Ge x I材料的体积减小,总能量升高,稳定性降低;Ge原子浓度越大,进入导带的相对电子数量越多,In1-x Ge x I电子迁移率减小,电阻率增大,同时最小光学带隙也增大,有利于改善体系的核探测性能.     

Universal properties of the four-body system with large scattering length

Few-body systems with large scattering length have universal properties that do not depend on the details of their interactions at short distances. We study the universal bound-state properties of the four-boson system with large scattering length in an effective quantum mechanics approach. We compute the four-body binding energies using the Yakubovsky equations for positive and negative scattering length. Moreover, we study the correlation between three- and four-body energies and present a generalized Efimov plot for the four-body system. These results are useful for understanding the cluster structure of nuclei and for the creation of weakly bound tetramers with cold atoms close to a Feshbach resonance.     

Exact L series solution of the Dirac-Coulomb problem for all energies

We obtain exact solution of the Dirac equation with the Coulomb potential as an infinite series of square integrable functions. This solution is for all energies, the discrete as well as the continuous. The spinor basis elements are written in terms of the confluent hypergeometric functions and chosen such that the matrix representation of the Dirac-Coulomb operator is tridiagonal. The wave equation results in a three-term recursion relation for the expansion coefficients of the wavefunction which is solved in terms of the Meixner-Pollaczek polynomials.     

Atomistic details of precipitates in lean Al–Mg–Si alloys with trace additions of Ag and Ge studied by HAADF-STEM and DFT

Abstract

Bonding energies and volume misfits for alloying elements and vacancies in multicomponent Al–Mg–Si alloys have been calculated using density functional theory (DFT). A detailed atomic scale analysis has been done for characteristic precipitate structures, using high-angle annular dark-field scanning transmission electron microscopy. Two new stacking configurations of the important strengthening phase β′′ were discovered in the Ge-added alloy. All three stacking variations were found to be energetically favourable to form from DFT calculations. The second stacking configuration, β₂′′, contains vacated columns in its unit cell, consequently requiring less solute to create the same volume fraction of precipitate needles. DFT suggests a lower formation enthalpy per atom for β₂′′ when Si is exchanged with Ge. In the alloy containing Ag additions, a new Q’/C-like local configuration containing Ag instead of Cu was discovered, also this phase was deemed energetically favourable from DFT.     

Perturbation theory for isotropic velocity-dependent potentials: Bound-states case

Starting from the time-independent Schr?dinger equation we develop formulae for the changes in the bound-state energies in the presence of an isotropic, velocity-dependent perturbing potential. The corresponding changes in the wave functions are also obtained. Unlike the case of the standard perturbation theory, determination of the changes in the energy and the wave function of a state only requires knowledge of the unperturbed ground-state wave function in addition to the perturbing potential. Evaluations of the energy changes and the corresponding wave functions are given for two examples in the s-wave case.     

锗/多孔硅和锗/氧化硅薄膜光致发光的比较研究

采用磁控溅射技术,以锗为溅射靶,在多孔硅上沉积锗薄膜,沉积时间分别为4,8和12 min,及以锗-二氧化硅复合靶为溅射靶,在n型硅衬底上沉积了含纳米锗颗粒的氧化硅薄膜,锗与总靶的面积比分别为5%,15%,30%.各样品在氮气氛中分别经过300,600及900℃退火30 min.对锗/多孔硅和锗/氧化硅薄膜进行了光致发光谱的对比研究,用红外吸收谱分析了锗/多孔硅的薄膜结构.实验结果显示,锗/多孔硅薄膜的发光峰位于517 nm附近,沉积时间对发光峰的强度有显著影响,锗层越厚峰强越弱.锗/氧化硅薄膜的发光峰位于580 nm附近,锗与总靶的面积比对发光峰的强度影响较大,锗/氧化硅薄膜中的锗含量越高峰强越弱.不同的退火温度对样品的发光峰强及峰位均没有明显影响.可以认为锗/多孔硅的发光峰是由多孔硅与孔间隙中的锗纳米晶粒两者界面的锗相关缺陷引起的,而锗/氧化硅的发光峰来自于二氧化硅的发光中心.     

Accurate analytic presentation of solution of the Schrödinger equation with arbitrary physical potential

High precision approximate analytic expressions of the ground state energies and wave functions for the arbitrary physical potentials are found by first casting the Schrödinger equation into the nonlinear Riccati form and then solving that nonlinear equation analytically in the first iteration of the quasilinearization method (QLM). In the QLM the nonlinear differential equation is treated by approximating the nonlinear terms by a sequence of linear expressions. The QLM is iterative but not perturbative and gives stable solutions to nonlinear problems without depending on the existence of a smallness parameter. The choice of zero iteration is based on general features of exact solutions near the boundaries. The approach is illustrated on the examples of the Yukawa, Woods-Saxon and funnel potentials. For the latter potential, solutions describing charmonium, bottonium and topponium are analyzed. Comparison of our approximate analytic expressions for binding energies and wave functions with the exact numerical solutions demonstrates their high accuracy in the wide range of physical parameters. The accuracy ranging between 10⁻⁴ and 10⁻⁸ for the energies and, correspondingly, 10⁻² and 10⁻⁴ for the wave functions is reached. The derived formulas enable one to make accurate analytical estimates of how variation of different interactions parameters affects correspondent physical systems.     

第一性原理研究[112]硅锗异质结纳米线的电子结构与光学性质

基于密度泛函理论体系下的广义梯度近似,本文利用第一性原理方法着重研究了[112]晶向硅锗异质结纳米线的电子结构与光学性质.能带结构计算表明:随着锗原子数的增加,[112]晶向硅锗纳米线的带隙逐渐减小;对Si_(36)Ge_(24)H_(32)纳米线施加单轴应变,其能量带隙随拉应变的增加而单调减小.光学性质计算则表明:随着锗原子数的增加,[112]硅锗纳米线介电函数的峰位和吸收谱的吸收边均向低能量区移动;而随着拉应变的增大,吸收系数峰值呈现出逐渐减小的趋势,且峰位不断向低能量区移动,上述结果说明锗原子数的增加与施加拉应变均导致[112]硅锗纳米线的吸收谱产生红移.本文的研究为硅锗异质结纳米线光电器件研究与设计提供一定的理论参考.     

ICP／AES操作条件及氢化物发生条件对As、Se和Ge光谱信号影响的研究

本文较系统地研究了ＩＣＰ／ＡＥＳ操作条件及酸介质。ＮａＢＨ４溶液浓度对Ａｓ、Ｓｅ和Ｇｅ谱线强度以及信背比的影响，讨论了这些元素的最佳检测条件，考察了一些共存元素对氢化物光谱信号的影响，观察到Ａｓ、Ｓｅ和Ｇｅ氢化物发生中Ｇｅ的光谱信号的一些特殊行为，及Ｃｕ对Ｇｅ的氢化物光谱信号的增强。     

Ge(SiO2)n团簇结构和电子性质的密度泛函理论研究

采用密度泛函理论中的广义梯度近似(GGA)对Ge(SiO2)n (n = 1—7)团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算。 结果表明,Ge(SiO2)n的最低能量结构是在(SiO2)n端位O原子以及近邻端位O原子的Si原子上吸附一个Ge原子优化得到;随着锗原子数的增加,增加的锗原子易与原来的锗原子形成锗团簇。掺杂锗原子后团簇的能隙比(SiO2)n团簇的能隙小,当多个Ge原子掺杂到(SiO2)3团簇时,其能隙随着Ge原子个数的增加出现了振荡,Gem(SiO2)3的能隙从可见光区到近红外光区变化。二阶能量差分、分裂能表明Ge(SiO2)2和Ge(SiO2)5团簇是稳定的。     

Si基Ge异质结构发光器件的研究进展

近年来,与Si的CMOS工艺相兼容的Ge/Si异质结构发光器件取得很多重要的进展。本文概述了Si基Ge异质结构发光器件的最新成果,如Ge/Si量子点发光二极管、Si衬底上的Ge发光二极管及激光器和Ge/SiGe多量子阱发光二极管,分别描述了这些器件的特点和增强其发光特性的途径。最后展望了Si基Ge异质结构发光器件的发展趋势,指出尽管Si基Ge异质结构发光器件获得了很大的发展,但是器件的发光效率仍然很低,离实用还有一定距离,还需要在材料和器件的结构方面有更多的创新。