The thermal metal-insulator phase transition in (EDO-TTF)2PF6

ABSTRACT

The thermal metal-insulator phase transition in the π-stacked (EDO-TTF)₂PF₆ charge transfer salt is of the Peierls type. It is related to geometrical reorganisations and charge ordering phenomena. We report that dimerising displacements are involved in the mechanism of this transition. By using periodic quantum chemical calculations, we find a double well potential in which dimerisation and charge localisation become manifest. By analysing the nuclear wavefunctions we discuss the mechanism of the phase transition in terms of thermal fluctuations.     

Theoretical investigation of ESR spectra and local structure for VO in Ba2Zn(HCOO)6(H2O)

The electron spin resonance spectra (characterized by g factors g_, g_⊥ and hyperfine structure constants A_ and A_⊥) of Ba₂Zn(HCOO)₆(H₂O) (BZFA): VO²⁺ crystal are calculated from high order perturbation formulas. The calculated results are in good agreement with the observed values. The local structure parameters of [VO(H₂O)₅]²⁺ clusters are also obtained from the calculation. The magnitudes of the metal-ligand distances parallel and perpendicular to the C₄-axis are, respectively, R_≈0.163 nm and R_⊥≈0.210 nm. It is shown that the local structure around the V⁴⁺ ion possesses a compressed tetragonal distortion along C₄-axis.     

Low-temperature phase transition in Ba2TiGe2O8

Previous work on Ba₂TiGe₂O₈ crystals has shown an unusual low-temperature (～ 223 K on cooling, ～ 273 K on heating) phase transition. Precession x-ray photographs on Ba₂TiGe₂O₈ single crystals show an incommensurate modulation along b*, and, for the first time, also along a*. Single crystal intensity data confirm the average structure in space group Cmm2. There is positional disorder in the pyrogermanate groups, and this is the probable cause for the modulated structure. The low-temperature phase transition is proposed to be a lock-in transition, with the modulation along a* locking in at a value of 1/3. Several properties, as well as other unusual features of the low-temperature phase transition, are discussed in light of the proposed lock-in transition. Domain studies show that the ferroelastic domains are unstable in the low-temperature phase.     

First-principles studies of structural,mechanical, electronic,optical properties and pressure-induced phase transition of CuInO2 polymorph

Using the first-principles density-functional theory within the generalized gradient approximation (GGA), we have investigated the structural, elastic, mechanical, electronic, and optical properties and phase transition of CuInO₂. Structural parameters including lattice constants and internal parameter, pressure effects and phase transition pressure were calculated. We have obtained the elastic coefficients, bulk modulus, shear modulus, Young's modulus and Poisson's ratio. We find that two phases of CuInO₂ are indirect band gap semiconductors (F–Γ and H–Γ for 3R and 2H, respectively). Optical properties, including the dielectric function, refractive index, extinction coefficient, reflectivity, absorption coefficient, loss function and optical conductivity have been obtained for radiations of up to 30 eV.     

Studies of the spin-Hamiltonian parameters, d–d transitions and defect structures for two tetragonal Cu centers in Ba2ZnF6:Cu crystal

Two theoretical methods, the perturbation theory method (PTM) and the complete diagonalization (of energy matrix) method (CDM), are applied to calculate the spin-Hamiltonian parameters (g-factors g, g and hyperfine structure constants A, A, obtained from electron paramagnetic resonance (EPR) spectra) and d–d transitions (obtained from optical spectra) for two tetragonal Cu²⁺ centers in Ba₂ZnF₆:Cu²⁺ crystals. The Cu²⁺(I) ion replaces the Zn²⁺ ion at tetragonally compressed octahedral coordination and has the ground state ²A₁(|d_z²), whereas the Cu²⁺(II) ion is at an interstitial site with a square-planar F⁻coordination and has the ground state ²B₂(|d_x²-y²). The calculated spin-Hamiltonian parameters and d–d transitions from the PTM and CDM coincide and are in reasonable agreement with the experimental values. This suggests that both methods are effective for the theoretical studies of EPR and optical spectral data for 3d⁹ ions in tetragonal symmetry with different ground states. The defect structures of the two Cu²⁺ centers in Ba₂ZnF₆:Cu²⁺ are also estimated.     

Structures and luminescence properties of Yb3＋ in the double perovskites Ba2YB＇O6 （B＇=Ta5＋, Nb5＋） phosphors

The Yb³⁺ doped Ba₂YB'O₆ (B'=Ta⁵⁺, Nb⁵⁺) were prepared by high temperature solid-state reaction method, their structures were determined by x-ray diffraction and refined by Rietveld method. The diffuse reflection absorption, excitation and emission spectra of Yb³⁺:Ba₂YB'O₆ (B'=,Ta⁵⁺, Nb⁵⁺) were measured at room temperature. Under the excitation of ultraviolet light, these phosphors exhibit broad charge transfer band emissions of TaO₆ or NbO₆ centre with large Stokes shift. The Yb³⁺ doped into these hosts are situated at Y³⁺ sites of cubic symmetry (O_h). The experimental energy levels of Yb³⁺ in Ba₂YTaO₆ and Ba₂YNbO₆ were determined by photoluminescence and diffuse reflection absorption spectra. Their wavefunctions and theoretical energy levels were obtained by diagonalising the Hamiltonian matrix. The experimental energy levels were fitted by Levenberg--Marquardt iteration algorithm to determine crystal field parameters. Then, the magnetic-pole transition line strengths of Yb³⁺:Ba₂YB'O₆(B'=Ta⁵⁺, Nb⁵⁺) from (²F_5/2)Γ₈^- to the low-energy states were calculated.     

A neutron diffraction study of the high pressure structural phase transition in (CD3ND3)2MnCl4

Abstract

High-pressure neutron diffraction experiments have been performed at room temperature on a powdered sample of the perovskite type-layer compound (CD₃ND₃)₂MnCl₄. A phase transition from the orthorhombic room-temperature phase (ORT) to a new high-pressure phase (HP) is demonstrated at 20.5 ± 0.2 kbars. A monoclinic unit cell with lattice parameters a = 6.824 (5) Å; b = 7.409 (8) Å c = 17.126 (12) Å and β = 82.94(9)° has been inferred for the HP phase, consistent with a two-dimensional perovskite-type structure. The HP phase appears to be much more compact than ORT; it is characterized, in particular, by an important compression (?10%) of the inter-layer distance. Space groups P2/c or P2₁/c consistent with the experimental data have been deduced for the HP phase, after group theoretical considerations based on shear transformation and order-disorder mechanisms.     

The baddeleyite-type high pressure phase of Ca(OH)2

Abstract

A phase transition from Ca(OH)₂ I (portlandite) to Ca(OH)₂ II at high pressure and temperature has been confirmed, using in situ x-ray diffraction in a multianvil high pressure device (DIA). The structure was determined at 9.5 GPa and room temperature from data collected after heating the sample at 300°C at 7.2 GPa in a diamond anvil cell. Both the Le Bail fit and preliminary Rietveld refinement suggest that the new phase, which reverts to Ca(OH), I during pressure release, has a structure related to that of baddeleyite (ZrO₁); it is monoclinic (P2₁/c) with a= 4.887(2), b= 5.834(2), c = 5.587(2), β = 99.74(2)°. The coordination number of Ca increases from six to seven (5 + 2) across the transition. At 500°C, the phase boundary is bracketed at 5.7 ± 0.4 GPa by reversal experiments performed in the DIA.     

Determination of optical nonlinearities in Cu(mpo)2 by Z-scan technique

The optical nonlinearities of Cu(mpo)₂ [formula = C₁₀H₈N₂CuO₂S₂] complex have firstly been investigated by using the Z-scan technique with a nanosecond-pulsed Nd:YAG laser at its second harmonic (532 nm) radiation. The nonlinear optical absorption and refraction coefficients of Cu(mpo)₂ have been measured with the different on-axial peak irradiances I ₀ at the waist ranging from 0.48 to 5.66 GW/cm². The nonlinear transmittance characteristics exhibit the near resonant two-photon absorption (TPA) at 532 nm and are explained by a population redistribution model. The nonlinear absorption originates from the near resonant TPA while the mechanism of the nonlinear refraction is the near resonant TPA transition enhancement. The linear increasing dependences of the optical nonlinearities on the incident irradiance arise from the population redistribution due to the near resonant TPA.     

X-ray study of the low-temperature phase transition in K2CoCl4

Precise lattice parameter measurements and intensity measurements of selected main and satellite reflections of K₂CoCl₄ have been performed in the temperature range 100 to 300 K in the vicinity of the low-temperature phase transition (commensurate-commensurate phase transition, T _c = 142 K). A broadening of the FWHM for the h01 reflections was observed below 142 K which suggests a transition from an orthorhombic phase to a monoclinic phase.     

Thickness optimization of Mo films for Cu（InGa）Se2 solar cell applications

Mo thin films are deposited on soda lime glass (SLG) substrates using DC magnetron sputtering. The Mo film thicknesses are varied from 0.08 μm to 1.5 μm to gain a better understanding of the growth process of the film. The residual stresses and the structural properties of these films are investigated, with attention paid particularly to the film thickness dependence of these properties. Residual stress decreases and yields a typical tensile-to-compressive stress transition with the increase of film thickness at the first stages of film growth. The stress tends to be stable with the further increase of film thickness. Using the Mo film with an optimum thickness of 1 μm as the back contact, the Cu(InGa)Se2 solar cell can reach a conversion efficiency of 13.15%.     

A new quaternary semiconductor compound (Ba2Sb4GeS10): Ab initio study

Abstract

The newly synthesised Ba₂Sb₄GeS₁₀ compound is notable because of the interesting features of the quaternary Sb-containing materials. The first principle method has been used to determine the physical properties of this compound. In particular, the electronic structure has been analysed using both conventional GGA-PBE and HSE06 functional. The values of the band gap for PBE and HSE06 calculations were 1.324 and 1.84 eV, respectively. The calculated elastic constants were used to predict polycrystalline mechanical properties. The estimated Vickers hardness (2.7 GPa) values show that Ba₂Sb₄GeS₁₀ is soft matter. Moreover, the vibrational properties of the compound have been studied. The calculation of the elastic constants and phonon dispersion curves indicates that the Ba₂Sb₄GeS₁₀ compound is stable both mechanically and dynamically. Furthermore, the minimum thermal conductivity and optical properties, such as dielectric functions and energy loss function, have also been discussed in detail in this paper.     

The electronic properties tuned by the phase transition between the semiconducting and metallic phase of monolayer MoS2/WS2

Using first-principles methods, we systematically investigate the electronic properties and atomic mechanism of the monolayer MoS₂/WS₂ homo-junction structure, which contains different phase structures, either the semiconducting hexagonal (H) structure or metallic trigonal (T) structure. Through tuning the size of the lateral homo-junction structure of either MoS₂ or WS₂, it can produce different boundaries which induce different phase transferred styles. More interestingly, the electronic structures of homo-junction structures can also be tuned by changing the size of the armchair and zigzag shapes of nanoribbons. The homo-junction structure of either MoS₂ or WS₂ exhibits alterable band structure and band edge position with the changing of the size. The strong dependence of the band offset on the sizes of the homo-junction monolayer also implicates a possible way of patterning quantum structures with size engineering.     

Structures, phase transition, elastic properties of SnO2 from first-principles analysis

We investigate the structural, phase transition and elastic properties of SnO₂ in the rutile-type, pyrite-type, ZrO₂-type and cotunnite-type phases by the plane-wave pseudopotential density functional theory method. The lattice constants, bulk modulus and its pressure derivative are well consistent with the available experimental and other theoretical data. Also, we find that the rutile→pyrite, pyrite→ZrO₂ and ZrO₂→cotunnite phase transition occur at 12.9, 59.1 and 111.1 GPa, which are in better agreement with the experimental results than those of Gracia et al. (2007). Moreover, we obtain the pressure dependences of elastic constants for the four structures.     

First-principle study of strain-driven phase transition in incipient ferroelectric SrTiO3

First-principle calculations were carried out to investigate the epitaxial strain dependence of the structural stability and related properties of SrTiO₃. The P4mm-to-P4/mmm-to-Amm2 phase transitions in SrTiO₃ with the epitaxial strain changing from compressive to expansive have been identified by analysis of the soft-mode eigendisplacement. The zero-temperature critical strains for the P4mm-to-P4/mmm and P4/mmm-to-Amm2 phase transitions are −0.72% and 0.83%, respectively, which is consistent with the previous predictions based on the phenomenological thermodynamic model and the parameterized total-energy model. The influences of the epitaxial strain on the dielectric tensor and spontaneous polarization along the phase transition path are discussed in terms of charge transfer. Further investigations on the vibration modes show unusual softening behaviors of the A₁ and B₂ modes in the Amm2 phase, which may be associated with the soft phonon modes away from Γ point and possibly result in other phase transitions unreported by any previous studies.     

Relation between highT c superconductivity and structure: A study of Ba3+x Cu6O14+δ and YBa2Cu3O7−δ systems

Superconductivity is found in tetragonal La_3−x Ba_3+x Cu₆O_14+δ and La, Ba)_6−x Sr _x Cu₆O_14+δ even though they do not possess Cu-O chains or the K₂NiF₄ structure. Resistivity measurements confirm the occurrence of a transformation from chain-superconductivity to sheet-superconductivity in YBa₂Cu₃O_7−δ as δ is varied in the range 0.0–0.5. Contribution No. 481 from the Solid State and Structural Chemistry Unit     

The electronic and optical properties of Cu doped CdI2

Based on the density functional pseudopotential method, the electronic structures and the optical properties of CdI₂ doped with Cu are investigated in detail. The calculation results indicate that the defect of Cu(Cd) exists steadily with a certain solubility. For the Cu doped CdI₂, the new highly localized impurity bands induced by Cu 3d states lie just across the Fermi energy at the top of the valence band. The doping of Cu induces reduction of band gap of CdI₂; red shifts are revealed in both the imaginary part of dielectric function and the absorption spectra corresponding to the change in band gaps. Moreover, the study of the reflection spectrum and the loss function shows that the doped Cu is responsible for the increased reflection peak intensity and the red shift of the plasma resonant frequency of CdI₂.     

过渡金属(Fe,Co,Ni,Zn)掺杂金红石TiO2的电子结构和光学性质

采用基于密度泛函理论的第一性原理方法对未掺杂以及不同浓度过渡金属Fe,Co,Ni,Zn掺杂金红石TiO₂的超晶胞体系进行了几何优化,并讨论了其晶格常数,电子能带结构和光学性质.研究结果表明:掺杂前后的晶格参数与实验值偏差在3.6%以下;适量的过渡金属掺杂不但影响体系能带结构,拓宽光吸收范围,而且扮演着俘获电子的重要角色,有利于光生电子-空穴对的有效分离以及增强光吸收能力;Fe,Co,Ni,Zn最佳理论掺杂体系分别为Ti_0.75Fe_0.25O₂,Ti_0.75Co_0.25O₂,Ti_0.75Ni_0.25O₂,Ti_0.83Zn_0.17O₂;Fe,Co,Ni3d态分裂为t_2g和e_g态,分别贡献于价带高能级和导带低能级部分,促进了电子-空穴对的生成,从而可提高TiO₂的光催化性能;Zn3d态电子成对填满轨道,不易被激发,故光催化活性无明显提高.     

Preparation and characterization of Cu(In,Ga)(Se,S)2 films without selenization by co-sputtering from Cu(In,Ga)Se2 quaternary and In2S3 targets

In this study, Cu(In,Ga)(Se,S)₂ (CIGSS) thin films were deposited onto a bi-layer Mo coated soda-lime glass by co-sputtering a chalcopyrite Cu(In,Ga)Se₂ (CIGS) quaternary alloy target and an In₂S₃ binary target. A one-stage annealing process was performed to form CIGSS chalcopyrite phase without post-selenization. Experimental results show that CIGSS films were prepared by the proposed co-sputter process via CIGS (70 W by radio frequency) and In₂S₃ (30 W by direct current) with a substrate temperature of 373 K, working pressure of 0.67 Pa, and one-stage annealing at 798 K for 30 min. The stoichiometry ratios of the CIGSS film were Cu/(In + Ga) = 0.92, Ga/(In + Ga) = 0.26, and Se/(S) = 0.49 that approached device-quality stoichiometry ratio (Cu/(In + Ga) < 0.95, Ga/(In + Ga) < 0.3, and (Se/S) ≈ 0.5). The resistivity of the sample was 14.8 Ω cm, with a carrier concentration of 3.4 × 10¹⁷ cm⁻³ and mobility of 1.2 cm² V⁻¹ s⁻¹. The resulting film exhibited p-type conductivity with a double graded band-gap structure.