Two compensation points induced by surface parameters in nanoscaled transverse Ising ferrimagnetic thin films

The phase diagrams and magnetizations of two nanoscaled thin films with a negative interlayer interaction at the surfaces, described by the transverse Ising model, are investigated by the use of the effective field theory with correlations. It is proved that two compensation points induced by the surface parameters (exchange interaction and transverse field at the surfaces) can be found in these nanosystems.     

Quantum Monte Carlo simulation of the ferroelectric or ferrielectric nanowire with core shell morphology

By using the Quantum Monte Carlo simulation; the electric properties of a nanowire, consisting of a ferroelectric core of spin-1/2 surrounded by a ferroelectric shell of spin-1/2 with ferro- or anti-ferroelectric interfacial coupling have been studied within the framework of the Transverse Ising Model (TIM). We have examined the effects of the shell coupling J_s, the interfacial coupling J_Int, the transverse field Ω, and the temperature T on the hysteresis behavior and on the electric properties of the system. The remanent polarization and the coercive field as a function of the transverse field and the temperature are examined. A number of characteristic behavior have been found such as the appearance of triple hysteresis loops for appropriate values of the system parameters.     

Characteristic phenomena in nanoscaled transverse Ising thin films with diluted surfaces

The phase diagrams and magnetizations of two nanoscaled thin films with a negative interlayer interaction and dilution at the surfaces, described by the transverse Ising model, are investigated by the use of the effective field theory with correlations. A lot of characteristic phenomena which heavily depend on the surface parameters can be found in them. In particular, the behaviors of a compensation point (or points) in these nanosystems with a negative interlayer interaction at the surfaces are examined by changing the transverse field and the physical parameters at the surfaces.     

Hexatic ordering in freely suspended liquid crystal films

In this paper, we report results from synchrotron X-ray scattering studies of thefluid/hexactic/solid phases and phase transitions in both very thick and very thin, freely suspended films of tilted hexatic liquid crystals. Contrary to the thick film case, the higher Fourier coefficients describing the bond orientational order are suppressed in very thin films. This suppression is consistent with a two-dimensional bond orientational order parameter, ₆, rather than the three-dimensional bond orientational order parameter found in very thick films. For a film containing twently-three (23) smectic layers we find that ₆ is two-dimensional whereas the positional order in the crystallineS _J phase is three-dimensional. We present an analysis of the thick film data in terms of the three-dimensionalXY-model and a new mean field theory model which incorporates explicitly the quasi two-dimensional nature of bulk smectic phases.     

Modeling a dimer state in CuGeO3 in the two-dimensional anisotropic Heisenberg model with alternated exchange interaction

The two-dimensional Heisenberg spin-1/2 model with alternated exchange interaction along the c axis and an anisotropic distribution of the exchange interaction in the lattice, J _b/J _c=0.1, is examined. A quantum Monte Carlo method is used to calculate the phase diagrams of the antiferromagnet, the dimer state in a plane, the value of the alternation δ of the exchange interaction, and the anisotropy Δ=1−J ^xy/J ^z of the exchange interaction, Δ∼δ ^0.58(6). The following characteristics are calculated for Δ=0.25: the dependence of the temperature of the dimer-state-paramagnet transition on the alternation of the exchange interaction, T _c(δ)=0.55(4)(δ−0.082(6))^0.50(3), the singlet-triplet energy gap, and the dependence of the magnetization on the external field for some values of δ. The value of the exchange interaction, J _c=127 K, the alternation of the exchange interaction, δ=0.11J _c, and the correlation radius along the c axis, ξ _c≈28c, are determined. Finally, it is found that the temperature dependence of the susceptibility and the specific heat are in good agreement with the experimental data. Zh. éksp. Teor. Fiz. 112, 2184–2197 (December 1997)     

Exact results of an alternating-bond mixed spin-1/2 and spin-1 Ising chain with both longitudinal and transverse single-ion anisotropies

The alternating-bond mixed spin-1/2 and spin-1 Ising chain with both longitudinal and transverse single-ion anisotropies are solved exactly by means of a mapping of the spin-1/2 transverse Ising chain and the Jordan-Wigner transformation. The ground state quantities are strongly dependent on the model Hamiltonian parameters J₁, J₂, D_x and D_z. We obtain the quasi-particles' spectra Λ_k, the dimerization gap Δ_d, the minimal energy Δ₀ for exciting a fermion quasi-particle, the minimal energy gap Δ_h for exciting a hole and the ground state energy E_g. The phase diagram of the ground state is also given. The results show that the alternating bond just quantitatively changes the ground state properties; no matter the nearest-neighbor exchange interactions J₁ and J₂ are equal or not, when D_z≥0 for any finite value of D_x, there is no quantum critical point and the ground state is always in a spin ordered phase.     

The transverse spin-1 Ising model with random interactions

The phase diagrams of the transverse spin-1 Ising model with random interactions are investigated using a new technique in the effective field theory that employs a probability distribution within the framework of the single-site cluster theory based on the use of exact Ising spin identities. A model is adopted in which the nearest-neighbor exchange couplings are independent random variables distributed according to the law P(J_ij)=pδ(J_ij−J)+(1−p)δ(J_ij−αJ). General formulae, applicable to lattices with coordination number N, are given. Numerical results are presented for a simple cubic lattice. The possible reentrant phenomenon displayed by the system due to the competitive effects between exchange interactions occurs for the appropriate range of the parameter α.     

Thermal entanglement in two-qutrit spin-1 anisotropic Heisenberg model with inhomogeneous magnetic field

The thermal entanglement of a two-qutrit spin-1 anisotropic Heisenberg XXZ chain in an inhomogeneous magnetic field is studied in detail. The effects of the external magnetic field (B), a parameter b which controls the inhomogeneity of B, and the bilinear interaction parameters J_{x=Jy≠Jz on the thermal variation of the negativity are studied in detail. It is found that negativity N decreases when the values of magnetic field, inhomogeneity b and temperature are increasing. In addition, N remains at higher temperatures for higher values of Jz and lower values of B and b.}     

参数修改对铁电薄膜相变性质的影响

在关联有效场理论的框架内, 利用微分算子技术, 详细地计算了基于横场伊辛模型描述的对称铁电薄膜系统的相变性质. 根据薄膜各层自旋平均值构成的一系列耦合方程, 推导出可以用来计算任意层的具有不同表面层的薄膜相图的解析通式方程, 讨论了参数修改对薄膜相互作用参数从FPD (铁电相占主导地位的相图)到PPD (顺电相占主导地位的相图)过渡值和参数空间中各相变区域的影响. 在与平均场近似进行比较的结果显示, 关联有效场理论所得到的铁电薄膜的铁电性在某种程度上比平均场近似下的结果减弱. 关键词： 铁电薄膜 横场伊辛模型 相图 居里温度     

Multicritical behaviour of the antiferromagnetic spin- Blume-Capel model

The multicritical behaviour of the spin- Ising model on the square lattice with nearest-neighbour antiferromagnetic exchange interaction (J<0), a crystal-field interaction (D) and an external magnetic field (H) is studied within mean field approximation (M.F.A.). The phase diagram exhibits a rich variety of behaviour: second order, first order and critical points of different order.     

Critical and Compensation Temperatures of the Ising Bilayer System Consisting of Spin-1/2 and Spin-1 Atoms

The critical and compensation temperatures of the bilayer Bethe lattices with one of the layers having only spin-1/2 atoms and the other having only spin-1 atoms placed symmetrically are studied by using exact recursion relations in a pairwise approach. The Hamiltonian of the model consist of the bilinear intralayer coupling constants of the two layers J ₁ and J ₂ for the interactions of the atoms in layers with spin-1/2 and spin-1, respectively, and the bilinear interlayer coupling constant J ₃ between the adjacent atoms with spin-1/2 and spin-1 of the layers. After obtaining the ground state phase diagram with J ₁ > 0, the variations of the order-parameters and the free energy are investigated to obtain the phase diagram of the model by considering only the ferromagnetic ordering of the layers, i.e. J ₁ > 0 and J ₂ > 0, and ferromagnetic or antiferromagnetic ordering of the adjacent spins of the layers, J ₃ > 0 or J ₃ < 0, respectively. It was found that the system presents both second- and first-order phase transitions and, tricritical points. The compensation temperatures was also observed for the appropriate values of the system parameters. PACS: 05.50.+q 05.70.Fh 64.60.Cn 75.10.Hk     

Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film

By modifying the interchange interactions and the transverse fields on the epitaxy surface layer,this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green’s function technique based on the transverse Ising model with a four-spin interaction.The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green’s function.The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer.The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.     

Continuum of compensation points in the mixed spin Ising ferrimagnet with four-spin interaction and next-nearest neighbor coupling

We investigate the magnetic properties of the mixed spin-1/2 and spin-1 Ising ferrimagnetic system with four-spin interaction J₄ and next-nearest neighbor (NNN) coupling J′. We perform exact ground-state calculations and use the finite cluster approximation, based on a single cluster theory, to derive the state equations for the two-dimensional square lattice. The main attention has been paid to the study of the phase diagram for both the transition and compensation temperatures. We find a number of characteristic behaviors. The model with only NNNs induces one compensation point while the four-spin interaction does not. The investigation of the model with both interactions shows a number of characteristic behaviors. In particular, the presence of the four-spin interaction, according to J₄ and J′, may lead to one, two or possibly a continuum of compensation points. This phenomenon may have important applications in technology such as thermomagnetic writing and erasing at the compensation point.     

Quantum Monte Carlo Investigation of the magnetic properties of weakly interacting antiferromagnetic chains with an alternating exchange interaction with spin S = 1/2

An approximation dependence of the spontaneous magnetic moment at a site, σ/σ(0) ? 1 = and the antiferromagnet-singlet state phase boundary, J ₂/J ₁ = 0.52(3)δ, are determined by the quantum Monte Carlo method in the self-consistent sublattice molecular field approximation for weakly inter-acting (J ₂) antiferromagnetic chains with spin S = 1/2 and alternating exchange interaction (J ₁ ± δ). The Néél temperature and a number of critical temperatures which could be related with the filling energy of two singlets (ΔS ^z = 0) and one triplet (ΔS ^z = 1) spin bands, each of which is split by the sublattice field (h ^{x, y} ≠ h ^z into two subbands, are determined on the basis of the computed correlation radii of the two-and four-spin correlation function, the squared total spin 〈 (S ^z)²〉 with respect to the longitudinal components, the dimerization parameter, and the correlation functions between the nearest neighbors with respect to longitudinal and transverse spin components. On the basis of the Monte Carlo calculations, the critical temperatures and possible energy gaps at the band center are determined for the antiferromagnets CuWO₄ and Bi₂CuO₄ and for the singlet compounds (VO)₂P₂O₇ and CuGeO₃, agreeing satisfactorily with existing results, and new effects are also predicted.     

Nuclear-induced time evolution of entanglement of two-electron spins in anisotropically coupled quantum dot

We study the time evolution of entanglement of two spins in an anisotropically coupled quantum dot interacting with the unpolarised nuclear spins environment. We assume that the exchange coupling strength in the z direction J _z is different from the lateral one J _l . We observe that the entanglement decays as a result of the coupling to the nuclear environment and reaches a saturation value, which depends on the value of the exchange interaction difference J = ‖J _l ? J _z ‖ between the two spins and the strength of the applied external magnetic field. We find that the entanglement exhibits a critical behaviour controlled by the competition between the exchange interaction J and the external magnetic field. The entanglement shows a quasi-symmetric behaviour above and below a critical value of the exchange interaction. It becomes more symmetric as the external magnetic field increases. The entanglement reaches a large saturation value, close to unity, when the exchange interaction is far above or below its critical value and a small one as it closely approaches the critical value. Furthermore, we find that the decay rate profile of entanglement is linear when the exchange interaction is much higher or lower than the critical value but converts to a power law and finally to a Gaussian as the critical value is approached from both directions. The dynamics of entanglement is found to be independent of the exchange interaction for an isotropically coupled quantum dot.     

Effects of the bond dilution on the phase diagrams of a spin-1 transverse Ising model with crystal field interaction on a honeycomb lattice

A bond diluted spin-1 Ising model with crystal and transverse field interactions is examined for honeycomb lattice by introducing an effective field approximation that takes into account the correlations between different spins that emerge when expanding the identities. The effects of the crystal field as well as the transverse field and dilution on the phase diagrams and order parameter m_z are discussed in detail. A number of interesting and unusual phenomena such as reentrant phenomena and three successive phase transitions originating from the crystal field as well as the transverse field and bond dilution have been found.     

Dynamic hysteresis behaviors in the kinetic Ising system on triangular lattice

We studied dynamic hysteresis behaviors of the spin-1 Blume-Capel (BC) model in a triangular lattice by means of the effective-field theory (EFT) with correlations and using Glauber-type stochastic dynamics. The effects of the exchange interaction (J), crystal field (D), temperature (T) and oscillating frequency (w) on the hysteresis behaviors of the BC model in a triangular lattice are investigated in detail. Results are compared with some other dynamic studies and quantitatively good agreement is found.     

Structural,optical, and electrical properties of boron-doped ZnO1-xSx thin films deposited by MOCVD

Boron-doped ZnO_1-xS_x (ZnO_1-xS_x:B) thin films were fabricated by metalorganic chemical vapor deposition (MOCVD). We investigated the structural, optical, and electrical properties of the ZnO_1-xS_x:B thin films. X-ray diffraction patterns showed that, except for the ZnO:B (x?=?0) and ZnS:B (x?=?1) thin films, the ZnO_1-xS_x:B thin films exhibit amorphous characters. Optical transmittance spectra were analyzed to estimate the band gaps of the thin films with different S content. All thin films showed direct band gaps ranging from 3.34?eV (ZnO:B) to 3.49?eV (ZnS:B). The influence of sulfur content on carrier concentration, electrical resistivity, and Hall mobility of the ZnO_1-xS_x:B thin films were analyzed from Hall effect measurements measured at temperatures ranging from liquid nitrogen temperature to room temperature. The ZnO_1-xS_x:B thin films exhibited n-type electrical conductivity except for ZnS:B, which was not measurable in this study due to its high resistivity (>100?Ω?cm).     

Photovoltaic structures using AgSb(S x Se1−x )2 thin films as absorber

Photovoltaic structures were prepared using AgSb(S _x Se_1?x )₂ as absorber and CdS as window layer at various conditions via a hybrid technique of chemical bath deposition and thermal evaporation followed by heat treatments. Silver antimony sulfo selenide thin films [AgSb(S _x Se_1?x )₂] were prepared by heating multilayers of sequentially deposited Sb₂S₃/Ag dipped in Na₂SeSO₃ solution, glass/Sb₂S₃/Ag/Se. For this, Sb₂S₃ thin films were deposited from a chemical bath containing SbCl₃ and Na₂S₂O₃. Then, Ag thin films were thermally evaporated on glass/Sb₂S₃, followed by selenization by dipping in an acidic solution of Na₂SeSO₃. The duration of dipping was varied as 3, 4 and 5 h. Two different heat treatments, one at 350 °C for 20 min in vacuum followed by a post-heat treatment at 325 °C for 2 h in Ar, and the other at 350 °C for 1 h in Ar, were applied to the multilayers of different configurations. X-ray diffraction results showed the formation of AgSb(S _x Se_1?x )₂ thin films as the primary phase and AgSb(S,Se)₂ and Sb₂S₃ as secondary phases. Morphology and elemental detection were done by scanning electron microscopy and energy dispersive X-ray analysis. X-ray photoelectron spectroscopic studies showed the depthwise composition of the films. Optical properties were determined by UV–vis–IR transmittance and reflection spectral analysis. AgSb(S _x Se_1?x )₂ formed at different conditions was incorporated in PV structures glass/FTO/CdS/AgSb(S _x Se_1?x )₂/C/Ag. Chemically deposited post-annealed CdS thin films of various thicknesses were used as window layer. J–V characteristics of the cells were measured under dark and AM1.5 illumination. Analysis of the J–V characteristics resulted in the best solar cell parameters of V _oc = 520 mV, J _sc = 9.70 mA cm^?2, FF = 0.50 and η = 2.7 %.