Influence of crystal synthesis on the incommensurate phase and lock-in transition of Rb2ZnCl4 crystals

A comparative study of several crystals of Rb₂ZnCl₄, obtained by different crystal growing methods, has allowed us to determine the influence of growth defects on the incommensurate phase and on the lock-in transition of these samples. X-ray diffraction has allowed us to complete previous dielectric measurements realized on the same samples and to relate the crystalline quality to the evolution of the modulation as a function of the temperature. The principal influence of an increasing defect density seems to be a stronger pinning of the modulated phase and this induces a lower lock-in temperature and a wider hysteresis.     

Commensurate and incommensurate modulated structures of Rb2ZnCl4

The commensurate and incommensurate structures of Rb₂ZnCl₄ have been refined using the four-dimensional formalism for modulated structures. They are characterized by a rigid body modulated rotation of the ZnCl₄ tetrahedra and by a translation motion of the Rb atoms.     

Atomic 6p-Tl0 centers in ferroelectric Rb2ZnCl4 crystals

Abstract

Several Tl⁰ (6s²6p ¹)-type paramagnetic centers, produced by low temperature X-ray irradiation, were observed and studied by electron spin resonance (ESR) in the orthorhombic ferroelectric phase of thallium doped Rb₂ZnCl₄ crystals. The centers were formed by electron trapping at Tl⁺ ions localized substitutionally at Rb⁺ sites. The number and properties of the observed centers account for the tripling of the unit cell in the ferroelectric phase.     

Synthesis, electrical and dielectric properties of FeVO4 nanoparticles

The electrical and dielectric properties of FeVO₄ nanoparticles were studied at different temperatures from ambient to 200 °C. The samples were prepared by simple co-precipitation method using ferric nitrate and ammonium metavanadate as the starting precursors. The powder X-ray diffraction pattern inferred the single phase formation and triclinic structure of FeVO₄. The morphology of the particles was elucidated from SEM studies. Detailed studies on the electrical and dielectric properties of the compound were carried out by using solid state impedance spectroscopy. A maximum dc conductivity of 4.65×10⁻⁵ S cm⁻¹ was observed at the measuring temperature of 200 °C. The calculated activation energy from dc conductivity was found to be 0.28 eV. It was evident that the electrical transport process in the system was due to the hopping mechanism. The detailed dielectric studies were also carried out.     

Dielectric properties of [N(CH3)4]2ZnCl4 crystal under influence of electric field and uniaxial stresses

Abstract

Dielectric and light scattering spectroscopy are the most sensitive methods for the direct observation of low-frequency excitations in incommensurate phases. In several cases they have been successfully used for the observation of amplitudon and phason modqs. Whereas the amplitudon below the normal-incommensurate transition temperature behaves in a similar way to soft modes at common structural transitions, the phason represents a qualitatively new feature of incommensurate phases. All the corresponding experimental data published up to the middle of 1980 are reviewed and consistently interpreted taking into account the specific selection rules recenily derived. The necessary theoretical background is discussed qualitatively.     

Yb:CaF2-SrF2激光晶体光谱性能以及热学性能的研究

采用坩埚下降法生长了Yb: CaF₂-SrF₂晶体,测试了该晶体的吸收和荧光光谱 以及在不同温度下晶体的热扩散系数和热膨胀系数,并且计算了晶体的热膨胀系数以及在常温下的热导率. 采用对比的方法,对晶体的吸收光谱,荧光光谱,热学性能进行了分析.从吸收和荧光光谱结果表明: 在掺杂相对较高浓度的SrF₂的混晶中, Yb³⁺吸收截面和发射截面比较大. Yb: CaF₂-SrF₂ (19%)晶体在1040 nm附近的发射截面比较大,光谱也比较宽. 这说明在掺杂相同浓度Yb时,混晶中CaF₂, SrF₂的比例不同,晶体的光谱性质不同, 主要原因是在混晶中晶体的无序度不同,晶体对称性降低,形成低对称光学中心. 从热扩散系数计算的热导率结果看出晶体具有比较好的热导率.     

Electron spin resonance study of a CuIr2S4 single crystal

A spinel sulphide CuIr₂S₄ single crystal, which exhibits an orbitally induced Peierls phase transition at ～230?K, is investigated by electron spin resonance (ESR) spectroscopy. The phase transition is clearly manifested on the ESR spectra. It is suggested that the ESR signals are produced by a few non-dimerized Ir⁴⁺ ions. Moreover, an extra ESR spectrum appears at low temperature in addition to the paramagnetic ESR signals of Ir⁴⁺ ions, which is suggested to be caused by the Jahn–Teller effect of the non-dimerized Ir⁴⁺ ions. From the ESR results, it is found that the Jahn–Teller splitting energy ΔE _JT is much smaller than the spin-dimerization gap.     

Analysis of the ferroelastic domains and phase transition in the K2SO4 crystal

Abstract

The domain structures of the β-K₂SO₄ crystal were analyzed by group theory. We obtained the permissible kinds of domain association and domain walls from the results of the group theory. It is suggested from the analysis that the (110) and (130) planes are W_mb walls. The value of the spontaneous strain of K₂SO₄ wast = 6.32 × 10^?3 at room temperature and also its temperature dependence was observed.     

Linear birefringence studies of incommensurate systems: II. KFeF4

Abstract

The temperature dependence of the linear birefringence (LB), Δn _c , is measured in the range 5 K ? T ? 500 K on samples of KFeF₄, which originate from hydrothermal, flux and Bridgman growth techniques. Pronounced anomalies are found at the orthorhombic-orthorhomic phase transition at T _c ∽ 400 K. It is weakly discontinuous with a near-tricritical exponent β ∽ 0.2. Weak anomalies near T _i ∽ T _c + (25 … 40 K) seem to indicate a transition into an intermediate incommensurate phase. Its XY-model character is reflected by the critical LB exponent β = 0.8 ± 0.1. A smooth LB anomaly below 200 K is due to 2-dimensional ferromagnetic spin-order.     

Mixed alkali metal selenate proton conductors: Phase transitions and crystal structure of [Rb0.54(Nh4)0.46]3H(SeO4)2

Optical birefringence, calorimetric, thermal expansion, powder and single crystal X-ray diffraction investigations of mixed proton conductors [Rb_1-x(NH₄)_x]₃H(SeO₄)₂ were performed with the aim of studying the influence of partial substitution of cations on the superprotonic phase transition, on the atomic structure and on other characteristic features of this type of crystals.     

The interface structure of nano-SiO2/PA66 composites and its influence on material's mechanical and thermal properties

The PA66-based nanocomposites containing surface-modified nano-SiO₂ were prepared by melt compounding. The interface structure formed in composite system was investigated by thermogravimetric analysis (TGA), Fourier-transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). The influence of interface structure on material's mechanical and thermal properties was also studied. The results indicated that the PA66 chains were attached to the surface of modified-silica nanoparticles by chemical bonding and physical absorption mode, accompanying the formation of the composites network structure. With the addition of modified silica, the strength and stiffness of composites were all reinforced: the observed increase depended on the formation of the interface structure based on hydrogen bonding and covalent bonding. Furthermore, the differential scanning calorimetry (DSC) and dynamic mechanical analysis (DMA) showed that the presence of modified silica could affect the crystallization behavior of the PA66 matrix and lead to glass transition temperature of composites a shift to higher temperature.     

X-ray study of the low-temperature phase transition in K2CoCl4

Precise lattice parameter measurements and intensity measurements of selected main and satellite reflections of K₂CoCl₄ have been performed in the temperature range 100 to 300 K in the vicinity of the low-temperature phase transition (commensurate-commensurate phase transition, T _c = 142 K). A broadening of the FWHM for the h01 reflections was observed below 142 K which suggests a transition from an orthorhombic phase to a monoclinic phase.     

DSC study of superionic phase transition in (NH4)4H2(SeO4)3 single crystals

DSC and complex impedance studies of the protonic conductor (NH₄)₄H₂(SeO₄)₃, which undergoes a superionic phase transition of first order at T_s = 378 K show that the activation energy of ionic conductivity d(lg σ)/dt and the ordering enthalpy ΔC_p of the crystal are proportional: d(lg σ)/dT = XΔC_p/RT_s + const, as found for MAg₄I₅ crystals undergoing a second-order superionic phase transition. Thus the short-range order environment of the species involved in fast-ion transport plays the main role in the superionic phase transition. This is also supported by the value of the entropy change at T_s, ΔS = 43 J/mole·K. A new metastable phase was found to be induced on heating the (NH₄)₄H₂(SeO₄)₃ crystal above T_s.     

Investigations of elastic properties at very low frequencies: Method and behaviour of (TMA)2ZnCl4

Abstract

A new apparatus to perform longitudinal elastic strain measurements over a frequency range from 10^?4 Hz to 10¹ Hz is presented. First results of measurements on TMAZC with the prototype of this device are given. These results will be discussed in connection with the new methods.     

尖晶石结构自旋有序CaTi2O4单晶生长和磁化率特性研究

通过助溶剂熔融法并在氩气气氛炉中成功生长出高质量大尺寸的CaTi₂O₄的单晶.X射线衍射实验及能量损失谱EDS证实,制备的CaTi₂O₄单晶晶胞参数a=9.781?,b=9.966?,c=3.148?,所有样品均为单相,且符合化学计量比,样品高纯.通过直流磁化率的测量,首次给出了晶体的Van-Vleck顺磁因子为6.85×10^-5cm³/mol,Cure-Weiss温度为-0.44 K,呈弱反铁磁性.同时,通过单晶各向磁化率的测量,进一步确认了CaTi₂O₄晶体中一维有序Ti-Ti反铁磁dimer链的形成,并明确了其方向. 关键词： 2O₄')" href="#">CaTi₂O₄ 磁化率 各向异性 反铁磁二聚化     

A genetic approach to the dielectric investigation of the high-temperature phase transition of TEA2MnCl4 crystals

The dielectric function of TEA₂MnCl₄ crystals is studied for a temperature range of 203–263?K in a frequency range of 1 kHz to 10?MHz. The measurement results are processed in the framework of the Cole–Cole model. An influence of the phase transition on the results is widely discussed. A genetic approach is successfully applied to the measured data and it is explained in detail. The method renders it possible to calculate the temperature dependence of dielectric properties in the time domain. The calculation method (the genetic algorithm) proved to be trustworthy and it is recommended to be employed in studying dielectric properties. A structural properties of the high temperature phase (i.e. above the phase transition temperature) will be also discussed and certain presumptions on the low temperature phase will be given.     

Anisotropic transport and optical properties of superconducting (La1-xSrx)2CuO4 single crystal thin films

An experimental study on the resistivity, Hall coefficient, upper critical field, and optical reflection and transmission characteristics is described for single-crystalline superconducting (La_1-xSr_x)₂CuO₄ thin films epitaxially grown on SrTiO₃ single crystal substrates by rf magnetron sputtering. These properties exhibit pronounced anisotropy between the c-axis direction and the Cu-O plane. The characteristics are consistently explained from the point of view of the two-diemensional (2D) electronic structure. The most noteworthy implication of the experimental results is that the transport along the c-axis is far from an itinerant picture. This leads to the idea that the superconductivity in the series of cuprate materials is caused by the 2D electronic system arising from the Cu-O planes, and some interactions between them, which is not possibly due to itinerant carriers.     

Structure formation and mechanisms of DC conduction in thermally evaporated nanocrystallite structure ZnIn2Se4 thin films

ZnIn₂Se₄ is of polycrystalline structure in as synthesized condition. It transforms to nanocrystallite structure of ZnIn₂Se₄ film upon thermal evaporation. Annealing temperatures influenced crystallite size, dislocation density and internal strain. The hot probe test showed that ZnIn₂Se₄ thin films are n-type semiconductor. The dark electrical resistivity versus reciprocal temperature for planar structure of Au/ZnIn₂Se₄/Au showed existence of two operating conduction mechanisms depending on temperature. At temperatures >365 K, intrinsic conduction operates with activation energy of 0.837 eV. At temperatures <365 K, extrinsic conduction takes place with activation energy of 0.18 eV. The operating conduction mechanism in extrinsic region is variable range hopping. The parameters such as density of states at Fermi level, hopping distance and average hopping energy have been determined and it was found that they depend on film thickness. The dark current–voltage characteristics of Au/n-ZnIn₂Se₄/p-Si/Al diode at different temperatures ranging from 293–353 K have been investigated. Results showed rectification behavior. At forward bias potential <0.2 V, thermionic emission of electrons from ZnIn₂Se₄ film over a potential barrier of 0.28 V takes place. At forward bias potential >0.2 V, single trap space charge limited current is operating. The trap concentration and trap energy level have been determined as 3.12×10¹⁹ cm⁻³ and 0.24 eV, respectively.     

Investigation of the optoelectronic properties of columbite ZnNb2O6 crystal

A high-quality ZnNb₂O₆ single-crystal grown by optical floating zone method has been used as a research prototype to analyze the optoelectronic parameters by measuring the absorption coefficient and transmittance spectra along the b-axis from 200 nm to 1000 nm at room temperature. The optical interband transitions of ZnNb₂O₆ have been determined as a direct transition with a band gap of 3.84 eV. The refractive index, extinction coefficient, and real and imaginary parts of the complex dielectric constants as functions of the wavelength for ZnNb₂O₆ crystal are obtained from the measured absorption coefficients and transmittance spectra. In the Urbach tail of 3.16–3.60 eV, the validity of the Cauchy–Sellmeier equation has also been evaluated. Using the single effective oscillator model, the oscillator energy E_o is found to be 4.77 eV. The dispersion energy E_d is 26.88 eV and ZnNb₂O₆ crystal takes an ionic value.     

由BaTiO3晶体结构相变时的介电特性研究其电场作用下的偶极子偏转路径

在不同频率和偏置电场下测量了BaTiO₃晶体从三方相到正交相再到四方相相变过程中的介电温谱.基于BaTiO₃晶体在电场作用下的偶极子偏转假设和介电特性实验结果,提出BaTiO₃各结构相在电场作用下的偶极子偏转路径可以由其相邻相的介电常数随温度的变化特性表现出来.推断出各结构相的偶极子偏转路径,以及偏置电场对偶极子偏转路径的影响. 关键词： 3晶体')" href="#">BaTiO₃晶体 介电特性 结构相变 偶极子偏转路径