Optical Tamm state polaritons in a quantum well microcavity with gold layers

A new type of cavity polariton,the optical Tamm state(OTS) polariton,is proposed to be realized by sandwiching a quantum well(QW) between a gold layer and a distributed Bragg reflector(DBR).It is shown that OTS polaritons can be generated from the strong couplings between the QW excitons and the free OTSs.In addition,if a second gold layer is introduced into the bottom of the DBR,two independent free OTSs can interact strongly with the QW excitons to produce extra OTS polaritons.     

Linear and non-linear behavior of cavity polaritons

We report on the linear and non-linear emission of cavity-polaritons under resonant excitation. At low excitation density, in addition to polariton photoluminescence, strong Rayleigh scattering is observed. At higher excitation densities, a sudden transition to a highly emissive state is observed, accompanied by spatial patterning. We attribute such phenomena to a combination of nonlinear cavity-polariton relaxation mechanism and nonlinear response of the cavity, leading to transverse pattern formation. A careful analysis of near- and far-field emission patterns with spatial filtering as well as reflectivity shows that an inhomogeneous situation develops, the center of the excited region undergoing a strong to weak coupling transition while the periphery is still in strong coupling. Despite the complex non-linear behavior we observe no signatures of Bose–Einstein condensation or Boser action.     

Polarization selection rules in scattering of cavity polaritons

We theoretically discuss scattering of polaritons in semiconductor microcavities by means of a microscopic model. Taking into account the composite character of excitons (formed by an electron and a hole), we analyze the relation between polarizations of incoming and outgoing polariton states under resonant excitation by linearly polarized laser beams with opposite in-plane momenta. In addition to these polarization selection rules, we investigate the nonlinear processes up to the sixth order and we show the origin of an induced anisotropy due to the excitation beams which is responsible for the operation of an optical gate based on polariton–polariton scattering in a microcavity.     

Approximate analytic expressions for calculation of spontaneous emission spectra for a quantum well embedded in a planar microcavity

The control of spontaneous emission is one of important characteristics of a planar microcavity. The integrals in the spherical coordinate for TE and TM modes spontaneous emission spectra of a quantum well (QW) embedded in a planar microcavity are derived with new variables dependent on wavelength and Taylor series including the two polarizations of the vacuum field. The approximate expressions of spontaneous emission in QW planar microcavities are obtained. The approximate results show that spontaneous emission spectra agree well with that in the numerical integral for planar semiconductor microcavities, in which Fermi-Dirac distribution functions of electrons and holes are considered. The main contribution to the spontaneous emission, radiated into all direction, has been found.     

Optical properties of individual manganese-doped quantum dots

The magnetic state of a single magnetic ion (Mn²⁺) embedded in an individual quantum dot is optically probed using micro-spectroscopy. The fine structure of a confined exciton in the exchange field of a single Mn²⁺ ion (S=) is analyzed in detail. The exciton–Mn²⁺ exchange interaction shifts the energy of the exciton depending on the Mn²⁺ spin component and six emission lines are observed at zero magnetic field. The emission spectra of individual quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton–Mn²⁺ exchange interaction (dependent on the Mn position) and the anisotropic part of the electron–hole exchange interaction (related to the asymmetry of the quantum dot).     

电场对量子阱中自由载流子光辐射线宽的影响

本文对固体中在较大空间范围运动的粒子采用轨道、动量及波包来描述。根据量子力学测不准关系, 粒子的能量测不准公式被导出。公式表明, 电场强烈地散射载流子, 使载流子所处能级大为展宽。应用该公式到Ｐ－Ｉ－Ｎ结构的ＧａＡｓ／ＧａＡｌＡｓ 多量子阱中, 理论计算的光辐射线宽与光致荧光实验测得的线宽吻合。     

Optical properties of III-Mn-V ferromagnetic semiconductors

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, the diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.     

Optical properties of InAs quantum dots in a Si matrix

We report on the optical properties of nanoscale InAs quantum dots in a Si matrix. At a growth temperature of 400°C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2–4 nm range with a high sheet density. Samples with such InAs quantum dots show a luminescence band in the 1.3 μm region for temperatures up to 170 K. The PL shows a pronounced blue shift with increasing excitation density and decays with a time constant of 440 ns. The optical properties suggest an indirect type II transition for the InAs/Si quantum dots. The electronic structure of InAs/Si QDs is discussed in view of available band offset information.     

Optical properties of low-dimensional structures formed by irradiation of laser

Some kinds of low-dimensional nanostructures can be formed by the irradiation of laser on a pure silicon sample and SiGe alloy sample. We have studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706 nm and 725 nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. We propose a mechanism on the increasing PL emission in the above structures, in which the trap state of the interface between SiO₂ and nanocrystal plays an important role.      

Optical properties of metallic nanowires

The optical response of metallic nanowires is determined taking into account the non-local electron response by use of a self-consistent method and a jellium model. An exact formula for the reflection factor is obtained in the usual case of an hydrodynamic dielectric function. Up to a constant factor it coincides with the non-retarded limit of the amplitude obtained in a previous calculation, leading finally to the same extinction function. This function is calculated for certain metallic nanowires of experimental interest (Na, Ag). From the non-retarded near field response, the scattering amplitude at any distance can be derived.     

Optical properties of Si/CaF2 superlattices

We present a first-principle theoretical study of the dielectric functions of Si/CaF₂ superlattices. In particular, we investigate how the optical response depends on the thickness of the Si layers. Our results show that for very thin Si slabs (well width less than 20 Å) optical excitation peaks are present in the visible range. These peaks are related to strong transitions between localized states. Moreover, the static dielectric costant is considerably reduced. From the comparison made with recent experimental data on similar systems we conclude that the quantum confinement, a good surface passivation and the presence of localized states are the key ingredients in order to have photoluminescence in confined silicon based systems.     

Optical properties of 1T and 2H phase of TaS2 and TaSe2

We have calculated the anisotropic frequency dependent dielectric function for the 1T and 2H phases of TaS₂ and TaSe₂ using the linear muffin tin orbital method within the atomic sphere approximation. We find significant anisotropy in the frequency dependent dielectric function for the 1T and 2H phases at low energies (less than 4 eV). Unfortunately there are no experimental data to compare with. The averaged dielectric function agrees with the available experimental data except that the calculated peak heights are underestimated and shifted to higher energies by 1–2eV.     

Optical transition properties of Eu in Eu(DBM)3phen mono-dispersed microspheres for microcavity laser application

Mono-dispersed microspheres of ternary complex Eu(DBM)₃phen (DBM=dibenzoylmethide; phen=1,10-phenanthroline) were prepared through a facile process. The obtained sample was characterized by means of X-ray powder diffraction (XRD) and scanning electron microscope (SEM). And the luminescence properties of the Eu(DBM)₃phen were investigated by the fluorescence spectra and the fluorescence decay. According to Judd-Ofelt theory, the optical transition intensity parameters Ω_λ (λ=2, 4 and 6) were obtained to be 20.99×10⁻²⁰, 0.98×10⁻²⁰ and 1.79×10⁻²⁰ cm², respectively. The radiative transition properties of ⁵D₀ level, including transition rates, branch ratios and radiative transition lifetime were calculated. As a potential material for microsphere lasers, the optical gain performance for ⁵D₀→⁷F₂ transition was also evaluated.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.     

Optical properties of GaNAs/GaAs triple quantum well structures

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hν=E_g(GaN_xAs_1−x). A matrix transfer algorithm was used to match the GaN_xAs_1−x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.     

Optical properties of arrays of Si nanopillars on the (1 0 0) surface of crystalline Si

We studied Si nanopillars arrays interesting for potential applications in both photonics and electronics. Two types of the Si nanopillars arrays were investigated. The first type is a regular array (square lattice with the spacing of 270 nm) made up of nanopillars with diameters of 60–70 nm (non-quantum nanopillars). Polarized reflection spectra displaying photonic band gap features and the corresponding photonic band structures were studied. The second type is a non-regular array made up of nanopillars with diameters of 10–20 nm (quantum nanopillars). Enhancement of the optical phonon Raman band, change of selection rules and a low-frequency shift of 0.5 cm⁻¹ of the band corresponding to the quantum size effect in Si cylinders with average diameter 15 nm were observed for the quantum nanopillars.     

Optical and electronic properties of anisotropic parabolic quantum disks in the presence of tilted magnetic fields

In the present work, the electronic and optical properties of anisotropic parabolic quantum disks are studied in the presence of an applied magnetic field. For this goal, we first obtain the electron energy levels of an anisotropic parabolic quantum disk under axial, tilted, and in-plane magnetic fields. According to the results obtained for the energy levels reveal that there is no degeneracy at zero magnetic field due to symmetry breaking. With increasing the anisotropy, the energy level spacing increases. At a constant anisotropy, the energy levels splitting decreases with increasing tilt angle of magnetic field. The total refractive index changes decrease when the tilt angle of magnetic field and the anisotropy increase. Also, the total absorption coefficients increase as the tilt angle of magnetic field and anisotropy increase.     

Optical and optoacoustic measurements of the absorption properties of spherical gold nanoparticles within a highly scattering medium

In the present paper the requirements for optical parameter characterization of absorbing materials located within a highly scattering medium has been addressed. The measurement scheme incorporates the optoacoustic technique where a single acoustic transducer is used to detect ultrasonic transients generated from laser irradiation. The absorbing medium is based on different concentrations of spherical gold nanoparticles (SGNP’s), these are currently being considered as non-toxic targeted optical contrast agents for both medical imaging and cancer therapeutics. In this paper we present results which demonstrate the two main advantages the optoacoustic technique has over other measurement schemes. These are the possibility to obtain information on the position and dimensions of absorbing bodies using a time of flight analysis (TOF) and secondly, the higher sensitivity of the optoacoustics compared to optical transmission techniques. The former advantage is of particular interest for imaging applications and the latter for detection and characterization of absorbing materials surrounded by high levels of high scattering mediums. We present for the first time the characterization of SGNP within a highly scattering medium. To further demonstrate the feasibility of the optoacoustic technique, the scattering coefficient of the surrounding medium has also been characterized.