Optical Tamm state polaritons in a quantum well microcavity with gold layers

A new type of cavity polariton,the optical Tamm state(OTS) polariton,is proposed to be realized by sandwiching a quantum well(QW) between a gold layer and a distributed Bragg reflector(DBR).It is shown that OTS polaritons can be generated from the strong couplings between the QW excitons and the free OTSs.In addition,if a second gold layer is introduced into the bottom of the DBR,two independent free OTSs can interact strongly with the QW excitons to produce extra OTS polaritons.     

Linear and non-linear behavior of cavity polaritons

We report on the linear and non-linear emission of cavity-polaritons under resonant excitation. At low excitation density, in addition to polariton photoluminescence, strong Rayleigh scattering is observed. At higher excitation densities, a sudden transition to a highly emissive state is observed, accompanied by spatial patterning. We attribute such phenomena to a combination of nonlinear cavity-polariton relaxation mechanism and nonlinear response of the cavity, leading to transverse pattern formation. A careful analysis of near- and far-field emission patterns with spatial filtering as well as reflectivity shows that an inhomogeneous situation develops, the center of the excited region undergoing a strong to weak coupling transition while the periphery is still in strong coupling. Despite the complex non-linear behavior we observe no signatures of Bose–Einstein condensation or Boser action.     

太赫兹波段介质微腔光学特性研究

采用匀胶法制备了厚度在微米量级的 Si/[TiO₂/Al₂O₃]²TiO₂和Si/[TiO₂/MgO]²/TiO₂ 多层介质膜反射镜. 采用太赫兹(THz)时域透射光谱系统获得了多层膜的时域透射谱. 用传输矩阵法模拟了Si/[TiO₂/Al₂O₃]²TiO₂ 和Si/[TiO₂/MgO]²/TiO₂两种分布式布拉格反射镜 (DBR)的反射相移和相位穿透深度等光学特性. 设计了两种结构为 DBR/LT-GaAs/DBR的对称THz光学微腔结构并模拟了腔结构的辐射光谱. 结果表明:通过引入谐振腔, 两种DBR组成的微腔器件在谐振波长处的强度分别提高了19和14倍. 其中Si/[TiO₂/Al₂O₃]²TiO₂/LT-GaAs (12 μm)/ [TiO₂/Al₂O₃]²TiO₂腔的辐射光谱存在两个峰, 分别位于208和248 μm, 并分析了出现两个谐振峰的原因. 探讨了通过引入介质谐振腔实现对THz源的辐射特性进行调控的可行性. 关键词： 分布式布拉格反射镜 光子晶体 穿透深度 太赫兹微腔     

Polarization selection rules in scattering of cavity polaritons

We theoretically discuss scattering of polaritons in semiconductor microcavities by means of a microscopic model. Taking into account the composite character of excitons (formed by an electron and a hole), we analyze the relation between polarizations of incoming and outgoing polariton states under resonant excitation by linearly polarized laser beams with opposite in-plane momenta. In addition to these polarization selection rules, we investigate the nonlinear processes up to the sixth order and we show the origin of an induced anisotropy due to the excitation beams which is responsible for the operation of an optical gate based on polariton–polariton scattering in a microcavity.     

Approximate analytic expressions for calculation of spontaneous emission spectra for a quantum well embedded in a planar microcavity

The control of spontaneous emission is one of important characteristics of a planar microcavity. The integrals in the spherical coordinate for TE and TM modes spontaneous emission spectra of a quantum well (QW) embedded in a planar microcavity are derived with new variables dependent on wavelength and Taylor series including the two polarizations of the vacuum field. The approximate expressions of spontaneous emission in QW planar microcavities are obtained. The approximate results show that spontaneous emission spectra agree well with that in the numerical integral for planar semiconductor microcavities, in which Fermi-Dirac distribution functions of electrons and holes are considered. The main contribution to the spontaneous emission, radiated into all direction, has been found.     

High sampling-rate measurement of turbulence velocity fluctuations in Mach 1.8 Laval jet using interferometric Rayleigh scattering

Interferometric Rayleigh scattering diagnostic technique for the time-resolved measurement of flow velocity is studied. Theoretically, this systematic velocity-measured accuracy can reach up to 1.23 m/s. Measurement accuracy is then evaluated by comparing with hot wire anemometry results. Moreover, the distributions of velocity and turbulence intensity in a supersonic free jet from a Laval nozzle with a Mach number of 1.8 are also obtained quantitatively. The sampling rate in this measurement is determined to be approximately 10 k Hz.     

Generation of Fabry–Pérot oscillations and Dirac state in two-dimensional topological insulators by gate voltage

We investigate electron transport through Hg Te ribbons embedded by strip-shape gate voltage through using a nonequilibrium Green function technique. The numerical calculations show that as the gate voltage is increased, an edgerelated state in the valence band structure of the system shifts upwards, then hangs inside the band gap and merges into the conduction band finally. It is interesting that as the gate voltage is increased continuously, another edge-related state in the valence band also shifts upwards in the small-k region and contacts the previous one to form a Dirac cone in the band structure. Meanwhile in this process, the conductance spectrum displays as multiple resonance peaks characterized by some strong antiresonance valleys in the band gap, then behaves as Fabry–P′erot oscillations and finally develops into a nearly perfect quantum plateau with a value of 2e~2/h. These results give a physical picture to understand the formation process of the Dirac state driven by the gate voltage and provide a route to achieving particular quantum oscillations of the electronic transport in nanodevices.     

Optical properties of individual manganese-doped quantum dots

The magnetic state of a single magnetic ion (Mn²⁺) embedded in an individual quantum dot is optically probed using micro-spectroscopy. The fine structure of a confined exciton in the exchange field of a single Mn²⁺ ion (S=) is analyzed in detail. The exciton–Mn²⁺ exchange interaction shifts the energy of the exciton depending on the Mn²⁺ spin component and six emission lines are observed at zero magnetic field. The emission spectra of individual quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton–Mn²⁺ exchange interaction (dependent on the Mn position) and the anisotropic part of the electron–hole exchange interaction (related to the asymmetry of the quantum dot).     

电场对量子阱中自由载流子光辐射线宽的影响

本文对固体中在较大空间范围运动的粒子采用轨道、动量及波包来描述。根据量子力学测不准关系, 粒子的能量测不准公式被导出。公式表明, 电场强烈地散射载流子, 使载流子所处能级大为展宽。应用该公式到Ｐ－Ｉ－Ｎ结构的ＧａＡｓ／ＧａＡｌＡｓ 多量子阱中, 理论计算的光辐射线宽与光致荧光实验测得的线宽吻合。     

Optical properties of III-Mn-V ferromagnetic semiconductors

We review the first decade of extensive optical studies of ferromagnetic, III-Mn-V diluted magnetic semiconductors. Mn introduces holes and local moments to the III–V host, which can result in carrier mediated ferromagnetism in these disordered semiconductors. Spectroscopic experiments provide direct access to the strength and nature of the exchange between holes and local moments; the degree of itineracy of the carriers; and the evolution of the states at the Fermi energy with doping. Taken together, the diversity of optical methods reveal that Mn is an unconventional dopant, in that the metal to insulator transition is governed by the strength of the hybridization between Mn and its p-nictogen neighbor. The interplay between the optical, electronic and magnetic properties of III-Mn-V magnetic semiconductors is of fundamental interest and may enable future spin-optoelectronic devices.     

Optical properties of InAs quantum dots in a Si matrix

We report on the optical properties of nanoscale InAs quantum dots in a Si matrix. At a growth temperature of 400°C, the deposition of 7 ML InAs leads to the formation of coherent islands with dimensions in the 2–4 nm range with a high sheet density. Samples with such InAs quantum dots show a luminescence band in the 1.3 μm region for temperatures up to 170 K. The PL shows a pronounced blue shift with increasing excitation density and decays with a time constant of 440 ns. The optical properties suggest an indirect type II transition for the InAs/Si quantum dots. The electronic structure of InAs/Si QDs is discussed in view of available band offset information.     

Optical properties of low-dimensional structures formed by irradiation of laser

Some kinds of low-dimensional nanostructures can be formed by the irradiation of laser on a pure silicon sample and SiGe alloy sample. We have studied the photoluminescence (PL) of the hole-net structure of silicon and the porous structure of SiGe where the PL intensity at 706 nm and 725 nm wavelength increases obviously. The effect of intensity-enhancing in the PL peaks cannot be explained within the quantum confinement alone. We propose a mechanism on the increasing PL emission in the above structures, in which the trap state of the interface between SiO₂ and nanocrystal plays an important role.      

Optical properties of metallic nanowires

The optical response of metallic nanowires is determined taking into account the non-local electron response by use of a self-consistent method and a jellium model. An exact formula for the reflection factor is obtained in the usual case of an hydrodynamic dielectric function. Up to a constant factor it coincides with the non-retarded limit of the amplitude obtained in a previous calculation, leading finally to the same extinction function. This function is calculated for certain metallic nanowires of experimental interest (Na, Ag). From the non-retarded near field response, the scattering amplitude at any distance can be derived.     

Optical properties of Si/CaF2 superlattices

We present a first-principle theoretical study of the dielectric functions of Si/CaF₂ superlattices. In particular, we investigate how the optical response depends on the thickness of the Si layers. Our results show that for very thin Si slabs (well width less than 20 Å) optical excitation peaks are present in the visible range. These peaks are related to strong transitions between localized states. Moreover, the static dielectric costant is considerably reduced. From the comparison made with recent experimental data on similar systems we conclude that the quantum confinement, a good surface passivation and the presence of localized states are the key ingredients in order to have photoluminescence in confined silicon based systems.     

Effects of hydrostatic pressure and temperature on the nonlinear optical properties of semiparabolic plus semi-inverse squared quantum wells

In this study, the effects of hydrostatic pressure and temperature on nonlinear optical rectification(OR), second-harmonic generation(SHG), third-harmonic generation(THG) and the linear,nonlinear, and total optical absorption coefficients(OACs) of a semiparabolic plus semi-inverse squared quantum well(QW) are theoretically investigated. The results show that hydrostatic pressure and temperature have significant effects on the optical properties of semiparabolic plus semi-inverse squared QWs, and that the energy levels and magnitudes of the resonant peaks of OR, SHG, THG, and the total OACs vary according to the shape of the limiting potential, the hydrostatic pressure, and the temperature. It is easily seen that the peak positions of the resonant peaks of OR, SHG, THG, and the total OACs in the semiparabolic plus semi-inverse squared QW show a red shift with increasing hydrostatic pressure, but a blue shift with increasing temperature. Therefore, the magnitude and position of the resonant peaks of OR, SHG, THG,and the total OACs can be adjusted by changing the hydrostatic pressure and the temperature,which promise a new degree of freedom in the tunability of various electro-optical devices.     

Optical properties of 1T and 2H phase of TaS2 and TaSe2

We have calculated the anisotropic frequency dependent dielectric function for the 1T and 2H phases of TaS₂ and TaSe₂ using the linear muffin tin orbital method within the atomic sphere approximation. We find significant anisotropy in the frequency dependent dielectric function for the 1T and 2H phases at low energies (less than 4 eV). Unfortunately there are no experimental data to compare with. The averaged dielectric function agrees with the available experimental data except that the calculated peak heights are underestimated and shifted to higher energies by 1–2eV.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.