Magnetic properties of Co implanted TlInS2 and TlGaSe2 crystals

The results of investigations of magnetic properties of ternary layered TlInS₂ and TlGaSe₂ ferroelectric crystals implanted with 40 keV Co⁺ ions at the fluency of 1.0×10¹⁷ ion cm^?2 are presented. It has been revealed that high-fluence implantation with Co ions results in metal nanoparticle formation in the near-surface irradiated region. The calculations of Co concentration profiles and SEM studies show that the metal nanoparticles are located under the surface at the depth of about 20 nm, and they originate the irregular-shaped bumps on the surface. The Co-implanted samples exhibited superparamagnetic behaviour at high temperatures and ferromagnetic state at temperatures lower than T_b, where T_b is a “blocking temperature” of superparamagnetic nanoparticles. It has been suggested that the observed phenomena can be discussed on the basis of strong magnetic dipolar interaction between Co nanoparticles inside the granular composite film formed as a result of implantation.     

Magnetodielectric effects in Co-implanted TlInS2 and TlGaSe2 crystals

The results of investigations of dielectric and magnetodielectric properties of ternary layered TlInS₂ and TlGaSe₂ ferroelectric crystals implanted with 40 keV Co⁺ ions at the fluency of 1.0 × 10¹⁷ ion/cm² are presented. The temperature dependences of the dielectric susceptibility of Co-implanted samples showed that the formation of metal nanoparticulate composite layer in the near-surface irradiated region as a result of high-fluency Co implantation causes considerable shifts of well-known successive structural phase transition points to high temperatures in heating regime. It has been revealed that the application of the magnetic field in the direction perpendicular to implanted surface results in shifting of the phase transition points to low temperature region. The observed peculiarities are considered as magnetocapacitance (magnetodielectric) effects, which appeared as a result of magnetoelectric lock-in interaction between domains of ferroelectric and ferromagnetic substances of the composite structure.     

Low-temperature X-ray studies of TlInS2, TlGaS2, and TlGaSe2 single crystals

The results of X-ray diffraction studies of the unit-cell parameters and thermal-expansion coefficients of TlInS₂, TlGaS₂, and TlGaSe₂ crystals in the temperature range 100–300 K are described. It is shown that the unit-cell parameters of all the studied crystals gradually increase with increasing temperature. The temperature dependences of these parameters exhibit anomalies in the form of bends and kinks at temperatures corresponding to phase transitions in the crystals. The thermal-expansion coefficients along the [001] crystallographic direction of the crystals under study are determined. It is found that their values slightly change with increasing temperature.     

Room‐temperature photoluminescence in quasi‐2D TlGaSe2 and TlInS2semiconductors

We reveal the intrinsic band‐to‐band photoluminescence (PL) in Tl‐based anisotropic semiconductors by means of confocal spectroscopy. The PL achieves largest value for k ⊥ c , where c is the layers stacking axis, and is dependent on polarization. In TlGaSe₂, the band edge absorption spectra were determined at different excitation geometry by using techniques of depth‐resolved free‐carrier absorption (FCA) and photoacoustic response (PAR). A strong absorption enhancement is detected in a large spectral area in the near‐surface region lateral to ab plane. The band‐to‐band absorption enhancement is the most probable cause for high PL intensity. The near‐surface behavior, different from the bulk, might implement useful photonic functionality at room temperature (RT). (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of γ irradiation on the low-temperature electrical conductivity and dielectric properties of TlGaSe2 crystals

Electrical conductivity and dielectric properties of single-crystal TlGaSe₂ have been studied as a function of γ irradiation dose in the 100–280 K range including the existence of an incommensurate phase. Anomalies in the form of maxima have been observed in the σ=f(T), tan δ=f(T), and ɛ=f(T) curves at the points of transition from the paraphase to incommensurate (IC) phase, T _i, and from the IC to commensurate phase, T _c. The increase in the quantities σ, tan δ, and ɛ observed initially with increasing irradiation dose is followed by their strong decrease and disappearance of the anomalies. It has been established that γ irradiation does not affect the phase transition temperatures T _i and T _c. Fiz. Tverd. Tela (St. Petersburg) 40, 1328–1331 (July 1998)     

Size dependence of dielectric properties and structural metastability in ferroelectrics

The size effect of the dielectric properties and the barrier height was investigated in the ferroelectric solid solution Ba_xSr_1-xTiO₃ system. The decrease of the grain size causes the suppression of the ferroelectricity, and the increase of the relaxation frequency. Barrier heights increase with increasing grain size. The result is analogous to magnetic phase transitions in nanocrystals and other solid-solid phase transitions in nanocrystals. It suggests a general rule that may be of use in the discovery of new metastable phases. An explanation of this phenomenon was given by an electric potential model that agrees well with the experimental results. For Ba_xSr_1-xTiO₃ system, the decrease of xcauses the decrease of the barrier height. Received 3 August 1998 and Received in final form 22 November 1998     

Effect of ionizing radiation on the dielectric characteristics of TlInS2 and TlGaS2 single crystals

The dependences of the permittivity and electrical conductivity of TlInS₂ and TlGaS₂ single crystals on the temperature and electron beam irradiation dose have been studied. It has been established that, as the electron irradiation dose increases, the electrical conductivity σ significantly increases, whereas the permittivity ? decreases over the entire temperature range covered (80–320 K). It has been shown that anomalies in the form of maxima in the temperature dependences σ(T) and ?(T) are observed in the regions characteristic of phase transitions in TlInS₂. Irradiation of the TlInS₂ and TlGaS₂ crystals with electrons to doses of 10¹⁵ and 10¹⁶ cm^?2 does not affect their phase transition temperatures. The dispersion curves of the permittivity ? of the TlGaS₂ crystal have been constructed.     

The aging effect within incommensurate phase in TlGaSe2

The effects of physical aging on the dielectric constant of TlGaSe₂ layered ferroelectric crystal were investigated. Isothermal aging processes were done within incommensurate phase in TlGaSe₂ ferroelectric single crystals when slow cooling was interrupted for a time at a constant temperature. The dielectric constant exhibited an unusual behaviour: it decreased exponentially with time. The results can be interpreted taking into account the interaction of the structure of the incommensurate phase with crystal fields of defects randomly distributed in the crystal structure. The measurements show that there are two relaxation mechanisms associated with two relaxation sites in mentioned temperature interval. This means that two different types of incommensurate phases occur in mentioned temperature interval.     

Influence of γ irradiation on the electrical conductivity and dielectric properties of β TlInS2 in the temperature range of the incommensurate phase

The influence of γ irradiation on the electrical conductivity σ, the dielectric permittivity ɛ, and the dielectric loss tangent tanδ of β-TlInS₂ crystals is investigated in the temperature range of the incommensurate phase. It is established that γ irradiation lowers the values of ɛ and tanδ over the entire investigated temperature range and decreases the maxima of the σ(T) and tanδ(T) curves in the vicinity of the transition temperature T _c, but does not alter the transition temperature. Fiz. Tverd. Tela (St. Petersburg) 39, 1088–1090 (May 1997)     

Layered character of dielectric function in TlGaSe2 at phase transition from exciton spectroscopy

It is shown that within the temperature region corresponding to paraphasia—ferroelectric phase transition dielectric constant of layered crystals TlGaSe₂ and TlInS₂ can be considered as consisting of two slabs with different dielectric constants ϵ₁, ϵ₂ and thickness d₁ and d₂ (d₁+d₂=c, c is the lattice vector projection in the direction normal to layer). So, the dielectric anomaly and spontaneous polarization occurring at phase transition takes place only in one of the slabs. This model is confirmed by some experimental results, such as dielectric function anisotropy and spectroscopy of excitons at phase transition temperatures.     

Optical and photoelectric properties of TlInS2 layered single crystals

Single crystals of the layered compound TlInS₂ were grown by direct synthesis of their constituents. The spectral and optical parameters have been determined using spectrophotometric measurements of transmittance and reflectance in the wavelength range 200–2500 nm. Absorption spectra of thin layers of TlInS₂ crystals are used to study the energy gap and the interband transitions of the compound in the energy region 2–2.4 eV. The dispersion curve of the refractive index shows an anomalous dispersion in the absorption region and a normal one in the transmitted region. The direct and indirect band gaps were determined to be 2.34 and 2.258 eV, respectively. Photoconductivity measurements at room temperature resolve the structure that can be identified with the optical transition.     

Optical and dielectric properties of nanostructured photonic crystals loaded by ferroelectrics and metals

The properties of new materials produced by loading artificial opals with different ferroelectrics (sodium nitrite, barium titanate, lithium niobate. etc.) are analyzed. The possibility of modifying the ferroelectric properties of materials by introducing them into pores of artificial opals is reported. The physical properties of artificial opals with pores loaded by conducting media (mercury, amorphous carbon, silver, gold, etc.) are studied. An analysis is made of the transmission and reflection spectra of broad-band radiation, which permit one to establish the characteristics of the stop bands as a function of the globule diameter, the type of ferroelectric or metal inserted into the opal pores, thermal annealing conditions, etc. The conditions favoring emission of slow electromagnetic waves in artificial opals are specified, and their characteristic properties are reported. The possibilities for increasing the efficiency of Raman and nonlinear optical processes in photonic crystals loaded by ferroelectrics and metals are analyzed.     

Growth and absorption properties of Dy-doped and undoped p-type TlGaSe2

2 and Dy-doped p-TlGaSe₂ (p-TlGaSe₂:Dy)single crystals were grown by the Bridgman–Stockbarger method. Absorption spectra were measured on freshly cleaved (001) surfaces. The freshly cleaved crystals had a mirror-like surface and there was no need for mechanical treatment. The absorption measurements were carried out in p-TlGaSe₂ and p-TlGaSe₂:Dy samples in the temperature range 10–320 K with a step of 10 K. The phonon energies calculated in p-TlGaSe₂ and p-TlGaSe₂:Dy are 23.0 meV and 21.0 meV, respectively. The direct band gaps of p-TlGaSe₂ and p-TlGaSe₂:Dy are 2.279 eV and 2.294 eV at 10 K, respectively. There is an abrupt change for the energy peak for p-TlGaSe₂ in the temperature ranges 105–120 K, 240–250 K, and for p-TlGaSe₂:Dy in the temperature ranges 100–110 K, 240–260 K. Received: 3 December 1997 / Accepted: 5 October 1998     

Phase transitions and metastable states in TlGaSe2

The results of measurements of the dielectric constant of TlGaSe₂ in temperature range of successive phase transitions are presented. An anomaly in the temperature dependence of the real part of dielectric constant in TlGaSe₂ has been observed at about 242?K in addition to anomalies at 115, 108, and also near 65?K as reported in previous publications. The presence of temperature hysteresis effects in temperature interval between 115 and 242?K allowed making a conclusion about possible existence of an incommensurate phase in the mentioned temperature range. A model of succession of the structural phase transitions in TlGaSe₂ has been suggested.     

核壳结构对弛豫铁电体介电行为的影响

介电弥散和介电隔离率的温度非线性关系是弛豫铁电体的主要特征. 通过对掺杂成分以线性梯度递减的核壳结构进行热力学函数分析, 认为核壳结构能够在低温区保持较高的介电常数, 但不能导致介电隔离率与温度的非线性关系. 通过对不同浓度掺杂的铁电体扩散相变的比较, 认为掺杂浓度会影响晶粒掺杂成分的不均匀性, 在较宽的分布条件下会导致介电隔离率与温度的非线性关系. 因而在介电常数的峰值温度区域, 顺电相与铁电相的晶粒共存. 温度变化会影响两相比例及铁电畴的变化, 从而导致弛豫铁电体的介电弥散性. 核壳结构会增大介电弥散性. 铁电陶瓷的掺杂物种类、掺杂物浓度和烧结温度均会影响核壳结构的成分不均匀性和介电弥散性.     

Simulation on dielectric susceptibility and domain evolution of relaxor ferroelectrics

Dielectric susceptibility and domain evolution of the relaxor ferroelectrics have been simulated using the Monte Carlo method upon the Potts-Ising model. The grain size effect and the applied ac field frequency effect on the dielectric susceptibility were theoretically investigated. We found that the dielectric susceptibility increases and the T_m (the temperature at which the dielectric susceptibility reaches the maximum) shifts to lower temperature with increasing average grain size or decreasing frequency. In addition, we obtained the value of the relaxation parameter γ estimated from the linear fit of the modified Curie-Weiss law; its changing trend with increasing average grain size or increasing frequency was well consistent with the experimental observation. From the results of the domain pattern evolution process, we observed the differences between relaxor ferroelectrics and normal ferroelectrics subjected to an applied ac field.     

Effect of a periodic temperature variation on the properties of TlGaSe2 crystals

It is shown experimentally that thermal cycling of TlGaSe₂ crystals does not result in appreciable disruption of the stacking of layered units along the C axis. The integrated intensities of (310), (221) reflections from this crystal change anomalously with temperature. These changes relax to their original values at room temperature over times in excess of 17 hours, which coincides with the time for recovery of the original properties of TlGaSe₂ samples investigated previously. Such behavior of the integrated intensity is connected with thermal migration of Tl⁺ ions over possible crystallographic sites within a unit cell. Fiz. Tverd. Tela (St. Petersburg) 39, 1652–1653 (September 1997)     

Aging effect of SiO2 xerogel film on its microstructure and dielectric properties

The properties of porous SiO₂ xerogel film strongly depend on the aging process. The morphology of the surface modified SiO₂ xerogel film pre-aged for 1 hr at 70°C showed a two-dimensional structure. Aging for 12 h at 70°C and successive modification of the film induced some particle growth and a three-dimensional network structure. The microstructure of the modified SiO₂ xerogel films reflects the preformed structure during aging. The surface modification induced the changes of surface coverage from –OC₂H₅ and –OH bonds to –CH₃. However the content of surface chemical species was almost same regardless of aging time. The porosity of the modified sample pre-aged for 12 h at 70°C was 89%. The calculated/measured dielectric constants were 1.31/1.42, respectively     

Monte Carlo simulation on dielectric relaxation and dipole cluster state in relaxor ferroelectrics

The Ginzburg--Landau theory on ferroelectrics with random field induced by dipole defects is studied by using Monte Carlo simulation, in order to investigate the dipole configuration and the dielectric relaxation of relaxor ferroelectrics. With the increase of random field, the dipole configuration evolves from the long-range ferroelectric order into the coexistence of short-range dipole-clusters and less polarized matrix. The dipole-cluster phase above the transition temperature and superparaelectric fluctuations far below this temperature are identified for the relaxor ferroelectrics. We investigate the frequency dispersion and the time-domain spectrum of the dielectric relaxation, demonstrating the Vogel--Fulcher relationship and the multi-peaked time-domain distribution of the dielectric relaxation.     

Determination of dielectric properties of ore minerals in the microwave band

We consider a method for determining the complex dielectric permittivity of ore and nonmetal minerals in the microwave band of electromagnetic radiation. The results of measuring the reflectivity and transmittivity of chalcopyrite, magnetite, sphalerite, and labradorite samples in the frequency range 77–300 GHz are presented. A method for calculation of the complex dielectric permittivity of minerals on the basis of the obtained experimental data is proposed. The approximation formulas for calculation of the complex dielectric permittivity of the studied minerals are given. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 51, No. 12, pp. 1071–1080, December 2008.