Dielectric and spectroscopic investigations of lithium aluminium zirconium silicate glasses mixed with TiO2

Li₂O–Al₂O₃–ZrO₂–SiO₂ glasses mixed with different concentrations of TiO₂ (ranging from 0 to 5.0?mol%) were synthesised and their dielectric properties (dielectric constant, loss tan?δ, a.c. conductivity σ) investigated over wide ranges of frequency and temperature. Studies of optical absorption, ESR, infrared (IR) and photoluminescence properties have also been undertaken. A decrease in dielectric parameters with increasing concentrations of TiO₂ has been observed and this is attributed to an increasing proportion of titanium ions occupying network-forming positions rather than going into interstitial positions. A.C. conductivity in the high-temperature region appears to be connected both to electronic transfer and ionic movements, but conduction attributed to such processes seems to be hampered by the entry of titanium ions into the network-forming positions. Analysis of the results of the IR spectral studies have indicated that there is a decreasing degree of disorder in the glass network with increasing TiO₂ content. The optical absorption and ESR spectral studies have revealed that titanium ions exist in both Ti³⁺ and Ti⁴⁺ states in the glasses. Luminescence spectra exhibited an emission band in the visible region and the luminescence efficiency increased with TiO₂ content. The excitation of substitutionally positioned octahedral Ti⁴⁺ ions is identified as being responsible for the observed luminescence emission.     

Investigation on spectral features of tungsten ions in PbO-Bi2O3-As2O3 glass matrix

Lead bismuth arsenate glasses mixed with different concentrations of WO₃ (ranging from 0 to 6.0 mol%) were synthesized. Differential thermal analysis (DTA), optical absorption, ESR and IR spectral studies have been carried out. The results of DTA have indicated that there is a gradual decrease in the resistance of the glass against devitrification with increase in the concentration of WO₃ upto 4.0 mol%.The optical absorption spectra of these glasses exhibited a relatively broad band peaking at about 880 nm identified due to d_xy→d_x²_−y² transition of W⁵⁺ ions; this band is observed to be more intense in the spectrum of glass containing 4.0 mol% of WO₃. Further, two prominent kinks attributed to ³P₀→¹S₀, ¹D₂ transitions of Bi³⁺ ions have also been located in the absorption spectra. The ESR spectra of these glasses recorded at room temperature exhibited an asymmetric signal at g_⊥∼1.71 and g_ll∼1.61. The intensity of the signal is observed to be maximal for the spectrum of the glass W₄. The quantitative analysis of optical absorption and ESR spectral studies have indicated that there is a maximum reduction of tungsten ions from W⁶⁺ state to W⁵⁺ state in the glass containing 4.0 mol% of WO₃. The IR spectral studies have indicated that there is a increasing degree of disorder in the glass network with increase in the concentration of WO₃ upto 4.0 mol%.     

Blue luminescence in Tm-doped KGd(WO4)2 single crystals

Up-conversion blue emissions of trivalent thulium ions in monoclinic KGd(WO₄)₂ single crystals at 454 and 479 nm are reported for a single pump laser source at 688 nm. We grew thulium-doped KGd(WO₄)₂ single crystals at several concentrations from 0.1% to 10%. We recorded a polarized optical absorption spectrum for the ³F₂+³F₃ energy levels of thulium at room temperature and low temperature (6 K). From the low temperature emission spectra we determined the splitting of the ³H₆ ground state. The blue emissions are characterized as a function of the dopant concentration and temperature from 10 K to room temperature. To our knowledge, this is the first time that sequential two-photon excitation process (STEP) generated blue emissions in thulium-doped single crystals with a single excitation wavelength.     

Ion implantation effects in glasses

Abstract

Ion implantation can be used to introduce network damage and to alter the chemical composition in glasses. Structural changes can be inferred from IR measurements near 1000 cm^?1 and by optical absorption near 2150 Å. Implantation-induced damage decreases the implanted volume in fused silica with consequent changes in the refractive index, the near-surface hardness, and the tensile surface stress. Prior work in these areas is reviewed. Implantation into alkali silicate glasses depletes the alkali content in the implanted region. These changes allow preferential surface crystallization in Li₂O-2SiO₂ glasses. Crystallization of amorphous SiO2 can be induced by implantation of Li. Insight into the crystallization process is obtained by following the associated ion movement by elastic recoil detection (ERD) and optical techniques. Implantation of 20keV H shows that saturation of implanted H-sites in fused silica occurs at about 2.2 × 10²¹ H/cm³ in agreement with free volume estimates of the maximum number of available interstitial sites. Details of H and D interactions in fused silica were studied as a function of fluence and temperature. Results are of interest in studies of corrosion in glasses considered for nuclear waste encapsulation and for components in fusion reactors.

IV Summary     

Influence of valence states and co-ordination of cobalt ions on dielectric properties of PbO-Bi2O3-As2O3:CoO glass system

The glasses of the composition (40−x) PbO-15Bi₂O₃-45As₂O₃-xCoO, with 0≤x≤0.6 mol% in the steps of 0.1 were synthesized. The dielectric properties viz., dielectric constant, loss and ac conductivity over moderately larger ranges of frequency and temperature were investigated. The results were analyzed with the aid of the data on optical absorption and IR spectra. The analysis indicated that there is an increase in the insulating strength of the glasses with increase in the concentration of CoO up to 0.4 mol%.     

First-principles studies of the electronic structure and optical properties of AgBO<Subscript>3</Subscript> (B=Nb,Ta) in the paraelectric phase

The electronic energy-band structure, density of states (DOS), and optical properties of AgBO₃ in the paraelectric cubic phase have been studied by using density functional theory within the local density approximation for exchange-correlation for the first time. The band structure shows a band gap of 1.533 eV (AgNbO₃)and 1.537 eV (AgTaO₃)at (M-⌈)point in the Brillouin zone. The optical spectra of AgBO₃ in the photon energy range up to 30 eV are investigated under the scissor approximation. The real and imaginary parts of the dielectric function and — thus the optical constants such as reflectivity, absorption coefficient, electron energy-loss function, refractive index, and extinction coefficient — are calculated. We have also made some comparisons with related experimental and theoretical data that is available.      

Spectroscopical splitting of Cu ion energy levels in magnesium lead fluoro silicate glasses

Homogeneous 40.0 MgO-(10-x) PbF₂-50.0 SiO₂: x CuO glasses were prepared using melt-quenching technique under controlled conditions. Spectroscopic studies (UV-vis absorption, ESR, FT-IR) are carried out for these glasses. One broad characteristic visible absorption band is observed around 700-850 nm in these glasses, the optical band gap decreases as the content of the CuO increases in the glass network up to 0.7 mol % then reversal trend is observed. ESR spectra of all these glasses show resonance peaks characteristic of Cu²⁺ ions and hyperfine splitting is resolved with increasing the CuO content in the glass network. From the observed ESR spectra, the spin-Hamiltonian parameters have been evaluated and indicate that Cu²⁺ ions have octahedral coordination with a strong tetragonal distortion in these glasses. By correlating ESR and optical absorption data, the molecular orbital coefficients have been evaluated. FT-IR spectra give important information about the nature of bonds in the glass matrix. The density of the glasses is also measured and is found to decrease with the increase CuO contents in the glass matrix. The physical parameters along with spectroscopic parameters are measured.     

Optical spectroscopy of Yb in the Cs2NaYF6 single crystal

Results of the optical spectroscopy investigation of the cubic paramagnetic center Yb³⁺ ion in the Cs₂NaYF₆ single crystal are presented. The Stark level energies of the Yb³⁺ multiplets are established from absorption, luminescence and excitation luminescence spectra and the crystal field parameters are calculated. Information about the phonon spectra of Cs₂NaYF₆ crystals is obtained from the electron-vibrational structure of the optical absorption and luminescence spectra.     

Optical absorption and thermoluminescence studies on LiF-Sb2O3-B2O3 glasses doped with Ni ions

20LiF-(30−x)Sb₂O₃-50B₂O₃:xNiO glasses with the value of x (ranging from 0 to 1.0 mol% in steps of 0.2) were prepared. A number of studies, viz. differential scanning calorimetry, optical absorption, magnetic susceptibility and thermoluminescence, on these glasses were carried out as a function of nickel ion concentration. An anomaly has been observed in all the properties of these glasses when NiO concentration is about 0.6 mol%. The results of these studies were analysed in the light of different environments of nickel ions in the glass network.     

The VUV‐VIS Spectroscopic Properties of Dy3+ Ion in Phosphors M5‐2XDyXNaX(PO4)3F (M=Ca,Sr, Ba) and Their Potential Applications in Mercury‐Free Lamps

The phosphors, fluorapatites M₅(PO₄)₃F (M=Ca, Sr, Ba) activated with Dy³⁺ ions, were prepared by a high‐temperature solid‐state reaction technique. The VUV‐UV excitation spectra and emission spectra under VUV/UV excitation were measured. The phosphors show broad and strong absorption near 172 nm and intensive emission with the chromaticity coordinates entering the white light region. Hence, the phosphors may be considered as suitable candidates for Hg‐free lamps.     

PbI2对远红外Te基硫系玻璃光学性能的影响

用传统的熔融淬冷法制备了一系列新型Ge-Te-PbI₂硫系玻璃,并且讨论了玻璃的形成区域. 利用X射线衍射(XRD)、差热分析(DTA)、可见/近红外吸收光谱、红外透过光谱等技术,研究重金属卤化物PbI₂对Ge-Te硫系玻璃组成、结构和性能的影响. 利用Tauc方程计算了样品的直接和间接光学带隙,根据金属标准和能量带隙理论讨论了玻璃光学带隙与组分变化的关系. 结果表明:PbI₂的引入,提高了Te玻璃的形成能力,而且玻璃的热稳定性良好;随着PbI₂含量的增加,玻璃的密度和折射率均增大,光学带隙减小,短波吸收截止边发生红移,玻璃的红外截止波长基本不变,达到了25 μm. 该系列玻璃可用于制备远红外长波波导器件. 关键词： Te基玻璃 2')" href="#">PbI₂ 光学带隙 红外光谱     

Crystallization of Ge2Sb2Te5 phase—change optical disk media

In this paper, the crystallization behaviour of amorphous Ge₂Sb₂Te₅ thin films is investigated using differential scanning calorimetry), x-ray diffraction and optical transmissivity measurements. It is indicated that only the amorphous phase to face-centred-cubic phase transformation occurs during laser annealing of the normal phase-change structure, which is a benefit for raising the phase-change optical disk's carrier-to-noise ratio (CNR). For amorphous Ge₂Sb₂Te₅ thin films, the crystallization temperature is about 200℃ and the melting temperature is 546.87℃. The activation energy for the crystallization, E_a, is 2.25eV. The crystallization dynamics for Ge₂Sb₂Te₅ thin films obeys the law of nucleation and growth reaction. The sputtered Ge₂Sb₂Te₅ films were initialized by an initializer unit. The initialization conditions have a great effect on the reflectivity contrast of the Ge₂Sb₂Te₅ phase-change optical disk.     

Characterization of electrodeposited Bi2S3 thin films by holographic interferometry

Optical non destructive evaluation methods, using lasers as the object illumination source, include holographic interferometry. It is widely used to measure stress, strain, and vibration in engineering structures. Double exposure holographic interferometry (DEHI) technique is used to determine thickness and stress of electrodeposited bismuth trisulphide (Bi₂S₃) thin films for various deposition times. The same is tested for other concentration of the precursors. It is observed that, increase in deposition time, increases thickness of thin film but decreases stress to the substrate. The structural, optical and surface wettability properties of the as deposited films have been studied using X-ray diffraction (XRD), optical absorption and contact angle measurement, respectively. The X-ray diffraction study reveals that the films are polycrystalline with orthorhombic crystal structure. Optical absorption study shows the presence of direct transition with band bap 1.78 eV. The water contact angle measurement shows hydrophobic nature of Bi₂S₃ thin film surface.     

Second-harmonic generation in transparent surface crystallized GeS2-Ga2S3-CdS chalcogenide glasses

Transparent surface crystallized glasses containing CdGa₂S₄ nonlinear optical crystal were prepared by the 70GeS₂ · 15Ga₂S₃ · 15CdS (GGC15) chalcogenide glass. Average diameters of crystallites are about 150 nm and 600 nm for heating at 405 °C for 48 and 108 h (named GGC15-48 and GGC15-108), respectively, and the thickness of the surface crystallized layer was approximately 15 μm. By using the Maker fringe measurement, prominent second-harmonic generation was observed from these crystallized glasses, and the χ⁽²⁾ of the GGC15-48 sample is calculated to be as well as 38.85 pm/V, and the value is 13.7 pm/V for the GGC15-108. They are promising to be applied in photoelectric and all-optical field in the future.     

Optical properties of amorphous films

We have analyzed the optical properties of a-Ge_30-xSb_xS₇₀ chalcogenide glass films (x=0,10,20 and 30 at%); the chalcogenide films were prepared by vacuum thermal evaporation. The optical-absorption data indicate that the absorption mechanism is non-direct transition. We found that the optical band gap, E_opt, decreases from 2.04±0.01 to 1.74±0.01 eV, whereas the refractive index increases with increasing Sb content. Data are analyzed by the Wemple equation, which is based on the single-oscillator model.     

Dispersive optical constants of a-Se100−xSbx films

Thin films of amorphous Se_100−xSb_x (x=5,10 and 20 at%) system are deposited on a silicon substrate at room temperature (300 K) by thermal evaporation technique. The optical constant such as refractive index (n) has been determined by a method based on the envelope curves of the optical transmission spectrum at normal incidence by a Swanpoel method. The oscillator energy (E_o), dispersion energy (E_d) and other parameters have been determined by the Wemple–DiDomenico method. The absorption coefficient (α) has been determined from the reflectivity and transmitivity spectrum in the range 300–2500 nm. The optical-absorption data indicate that the absorption mechanism is a non-direct transition. We found that the optical band gap, E_g^opt, decreases from 1.66±0.01 to 1.35±0.01 eV with increase Sb content.     

Photoplasticity of As2Se3 films investigated with combined nanoindentation and AFM methods

Thin As₂Se₃ amorphous chalcogenide films have been studied by nanoindentation and atomic force microscopy in darkness and under illumination by band-gap light. The combination of these two methods has been used to study the peculiarities of the photoplastic effect in amorphous semiconductors. It has been shown by multiple loading indentation experiments that a non-linear mechanism of the formation of the strain response is realized in the As₂Se₃ films subjected to the combined action of light and external mechanical loading. We have observed that light illumination alters the internal friction of the films and their shear modulus. These observations have been considered in the frame of the two-phase model of chalcogenide glasses. Some arguments in favor that the self-organization processes take place in the structure of irradiated film are given.     

Photoexpansion and photobleaching effects in oxysulfide thin films of the GeS2+Ga2O3 system

Oxysulfide systems undergo structural transformations upon illumination with laser light of near bandgap energy, as well as chalcogenide materials (glasses and films). In this paper, photoinduced effects such as photoexpansion and photobleaching were observed in GeS₂+Ga₂O₃ (GGSO) films synthesized by electron beam evaporation. A surface expansion of the thin films and a shift to shorter wavelengths of the optical absorption edge were observed as a result of UV laser irradiation (wavelength of 351 nm) and they are dependent on laser power density, exposure time and film composition. These parameters were varied to evaluate and enhance the observed effects. In addition, the irradiated GGSO samples exhibited a decrease in refractive index, measured with a prism-coupling technique, which makes these films suitable candidates for applications as gratings and waveguides in integrated optics.     

Absorption by CS<Subscript>2</Subscript> molecules on “hot” band emission lines from a TEA CO<Subscript>2</Subscript> laser

We have measured absorption of emission from a TEA CO₂ laser, lasing on hot band lines, in pure CS₂ and a mixture of CS₂ with air, and we have determined the optimal lines for optical excitation. Numerical modeling has shown that as the peak intensity of the pump radiation is increased, we observe absorption saturation, the extent of which decreases as the pressure increases. The major factor responsible for absorption saturation is the “rotational bottleneck” effect. Depending on the peak intensity of the radiation, addition of a buffer gas can lead to an increase or decrease in the absorption. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 61–66, January–February, 2007.     

Unconventional photoluminescence effect of SrTiO3 thin film under UV-illumination

We find that PL intensity I(t) of SrTiO₃ thin film measured under UHV condition increases with UV-laser illumination over long time scale of ∼ 2 h. The intensity increase takes place at lower sample temperature as well, 200, 100 K, and 20 K. When O₂ and N₂ gas are introduced into the sample chamber the PL intensity decreases with the UV-illumination time, opposite to the UHV-case. We consider a quantitative thermal energy flow model of the laser-power and heat absorption by the sample, but find that temperature change of the sample is not large enough to account for the time dependent I(t). We propose photo-catalysis effect on STO surface as possible scenario of the PL intensity change.