InP(001)-(2 x 1) surface: a hydrogen stabilized structure

The InP(001)(2 x 1) surface has been reported to consist of a semiconducting monolayer of buckled phosphorus dimers. This apparent violation of the electron counting principle was explained by effects of strong electron correlation. Combining first-principles calculations with reflectance anisotropy spectroscopy and LEED experiments, we find that the (2 x 1) reconstruction is not at all a clean surface: it is induced by hydrogen adsorbed in an alternating sequence on the buckled P dimers. Thus, the microscopic structure of the InP growth plane relevant to standard gas phase epitaxy conditions is resolved and shown to obey the electron counting rule.     

Monte carlo simulation of transitions related to growth on (001) faces of Si and Ge

Based on Monte Carlo simulations for molecular beam epitaxy, three types of growth related transitions on the Si(001) and Ge(001) surfaces have been studied. In the thermal roughening simulations on a Ge(001) surface, a different type of transition from the Kosterlitz and Thouless type is obtained. The simulated result is consistent with the experimental x-ray diffraction data, at least qualitatively. In the growth simulations, a transition in the shape of growing islands is shown at the very initial stage of the homoepitaxial growth on a Si(001)-2x1 flat surface. During the transition, the step density variations as a function time show different behaviors at various temperatures. In the homoepitaxial growth on Si(001)-2x1 vicinal surfaces, the growth mode transition from two-dimensional island formation to the step-flow mode is reproduced by increasing the system temperature, which agrees qualitatively with the observed results. At the intermediate temperature, a transient growth mode is obtained, in which the two-dimensional island formation and the step flow growth modes coexist on two types of terraces on the surface.     

Structure and stability of the anatase TiO2 (101) and (001) surfaces

Well-defined (101) and (001) surfaces of anatase TiO₂ were studied for the first time by secondary-electron imaging and low-energy electron diffraction. Initially, both surfaces show a crystalline structure corresponding to the bulk anatase phase, buried under an atomically thin contamination layer. After mild sputtering with 500 eV Ne⁺ ions, we have observed a surface phase transition from tetragonal anatase to face-centered cubic titanium monoxide TiO. Subsequent annealing at 900 K restores the (1×1) anatase structure at the (101) surface. On the (001) surface, however, a (1×4) reconstruction appears. The unreconstructed structure can be recovered by exposing the surface to oxygen. These observations demonstrate the stability of the anatase surfaces and illustrate the feasibility of preparing and investigating clean surfaces of this technological important form of TiO₂.     

Role of long range interaction in oxygen superstructure formation on Cu(001) and Ni(001)

On the basis of electronic structure calculations, we show that the long range Coulomb interaction provides the driving mechanism for oxygen overlayer formation on Cu(001). We illustrate that this interaction in the precursor c(2 x 2) phase induces a missing row reconstruction of Cu(001), and leads to the (2sqrt[2] x sqrt[2])R45 degrees O structure, which has strong covalent pO-dCu coupling. For the c(2 x 2)O overlayer on Ni(001) and Cu(001), we show that pO-dNi bonding is larger than pO-dCu and serves to neutralize the perturbation of the Coulomb interaction induced by the O overlayer. Consequently, c(2 x 2)O/Ni(001)) is stable while c(2 x 2)O/Cu(001) exists only in limited environments.     

Energetics of Si(001) surfaces exposed to electric fields and charge injection

We perform density-functional calculations on the influence of external electric fields and electrons or holes injected into surface states on the relative stability of c(4x2) and p(2x2) reconstructed Si(001) surfaces. It is shown that an electric field parallel to the [001] direction or the insertion of electrons into surface states favors the formation of p(2x2) periodicities. Our results explain recent experimental studies reporting changes of surface reconstruction of Si and Ge(001) surfaces induced by the scanning tunneling microscope and the occurrence of p(2x2) reconstructions on (001) surfaces of n-doped Si.     

Order-disorder transition on Si(001)

A phase transition between c(4x2) and 2x1 structures on the Si(001) surface has been observed at 200 K by low-energy electron diffraction. This transition is a second order order-disorder transition of the asymmetric dimer configuration. The streak pattern remains up to well above the transition temperature. The temperature dependence of the width and the length of the streak can be described in terms of the effects of a strong anisotropic coupling between adjacent asymmetric dimers.     

III-V compound semiconductor (001) surfaces

There has been renewed interest in the structure of III-V compound semiconductor (001) surfaces caused by recent experimental and theoretical findings, which indicate that geometries different from the seemingly well-established dimer models describe the surface ground state for specific preparation conditions. I review briefly the structure information available on the (001) surfaces of GaP, InP, GaAs and InAs. These data are complemented with first-principles total-energy calculations. The calculated surface phase diagrams are used to explain the experimental data and reveal that the stability of specific surface structures depends largely on the relative size of the surface constituents. Several structural models for the Ga-rich GaAs (001)(4×6) surface are discussed, but dismissed on energetic grounds. I discuss in some detail the electronic properties of the recently proposed cation-rich GaAs (001)ζ(4×2) geometry. Received: 18 May 2001 / Revised version: 23 July 2001 / Published online: 3 April 2002     

Subsurface dimerization in III-V semiconductor (001) surfaces

We present the atomic structure of the c(8 x 2) reconstructions of InSb-, InAs-, and GaAs-(001) surfaces as determined by surface x-ray diffraction using direct methods. Contrary to common belief, group III dimers are not prominent on the surface, instead subsurface dimerization of group III atoms takes place in the second bilayer, accompanied by a major rearrangement of the surface atoms above the dimers to form linear arrays. By varying the occupancies of four surface sites the (001)-c(8 x 2) reconstructions of III-V semiconductors can be described in a unified model.     

Dynamics of Au-induced nanowires on Ge(001)

We have studied the dynamics of Au-induced nanowires on Ge(001) using scanning tunnelling microscopy. The ridges of these nanowires consist of buckled dimers that have their dimer bond aligned in a direction perpendicular to the nanowire direction. Neighbouring dimers have a preference to buckle in an opposite direction, leading to rows with a zigzag appearance. Dimers located at anti-phase boundaries continuously flip back and forth between their two buckled configurations. This process is thermally induced and occurs at an average frequency of 25 Hz at room temperature.     

Atomic structure of InSb(001) and GaAs(001) surfaces imaged with noncontact atomic force microscopy

Noncontact atomic force microscopy (NC-AFM) has been used to study the c(8x2) InSb(001) and the c(8x2) GaAs(001) surfaces prepared by sputter cleaning and annealing. Atomically resolved tip-surface interaction maps display different characteristic patterns depending on the tip front atom type. It is shown that representative AFM maps can be interpreted consistently with the most recent structural model of A(III)B(V)(001) surface, as corresponding to the A(III) sublattice, to the B(V) sublattice, or to the combination of both sublattices.     

Electronic structure and magnetism of metastable bcc Co(001)

The electronic structure and magnetism of thin films of metastable bcc phase Co(001) consisting of one-, five- and nine-layers is determined by means of all-electron local spin density full potential linearized augmented plane wave (FLAPW) calculations at the lattice constant found for bcc Co stabilized on a GaAs substrate by Prinz. Band structure, surface states, density of states, charge and spin densities and contact hyperfine fields are presented. The center layer of the many-layer films yields a spin magnetic moment of 1.76μ_B which agrees well with results of bulk calculations for bcc Co. The surface layer has a moment (1.94μ_B) which is only 10% greater than the bulk value - in sharp contrast to the enhancement found for other transition metal surfaces [35% for Fe(001), 20% for Ni(001) and over 300% for Cr(001)]. Unlike these other transition metal surfaces, even the first layer below the surface layer in Co has the bulk magnetic moment - which indicates that the spin density, like the charge density, shows very short range screening of the surface-vacuum interface.     

Phase transition from asymmetric to symmetric dimer structure on the Si(001) surface at high temperature

The dimer configurations on the Si(001) surface at high temperatures have been investigated using the rocking curve of reflection high-energy electron diffraction. The Si(001) surface shows a displacive phase transition around 900 K, where a well-known asymmetric (tilted) dimer structure on the Si(001) at room temperature transforms to a symmetric dimer structure around 900 K. The metallic feature of the Si(001) surface above 900 K can be explained by the phase transition.     

Two-dimensional carbon incorporation into Si(001): C amount and structure of Si(001)-c(4 x 4)

The C amount and the structure of the Si(001)-c(4 x 4) surface is studied using scanning tunneling microscopy (STM) and ab initio calculations. The c(4 x 4) phase is found to contain 1/8 monolayer C (1 C atom in each primitive unit cell). From the C amount and the symmetry of high-resolution STM images, it is inferred that the C atoms substitute the fourth-layer site below the dimer row. We construct a structure model relying on ab initio energetics and STM simulations. Each C atom induces an on-site dimer vacancy and two adjacent rotated dimers on the same dimer row. The c(4 x 4) phase constitutes the subsurface Si(0.875)C(0.125) delta layer with two-dimensionally ordered C atoms.     

DFT and Monte Carlo study of the W(001) surface reconstruction

The driving force for the W(001) surface reconstruction and electronic structures of pristine and H-covered W(001) surfaces are studied by means of relativistic DFT calculations. The spin-orbit coupling leads to the splitting of the bands. Adsorbed physical monolayer of hydrogen due to forming adsorption bonds stabilizes the (1 × 1) structure of the H/W(001) surface. The performed calculations have not revealed any substantial nesting of Fermi surface, so do not support the Peierls-like charge-density-wave mechanism of the surface reconstruction. The total energy of the (√2 × √2)R45° W(001) surface structure is found to be lower, by 0.14 eV per atom, than for the (1 × 1 W(001). The dependence of the relative intensity of the characteristic LEED reflection on temperature, obtained with the help of Monte Carlo simulations using the interaction energies estimated from DFT calculations, is in good agreement with available experimental data, thus supporting the concept of the order-disorder type of the transition between the low-temperature ((√2 × √2)R45° and room-temperature (1 × 1) surface structures of W(001).     

Kinetics in surface reconstructions on GaAs(001)

We have successfully controlled the surface structures of GaAs(001) by changing incident As-molecular species. Under As4 fluxes, the c(4 x 4) reconstruction with Ga-As dimers [c(4 x 4)alpha structure] is obtained, but the formation of three As-As dimer structures [c(4 x 4)beta structure] is kinetically limited. On the other hand, the structure change from the (2 x 4), through c(4 x 4)alpha, to c(4 x 4)beta phases is observed under As2 fluxes. We found that the c(4 x 4)alpha structure is energetically metastable and provides a kinetic pathway for the structure change between the (2 x 4) and c(4 x 4)beta phases under As2 fluxes.     

Electron-beam-induced disordering of the Si(001)-c(4 x 2) surface structure

An electron beam (EB) irradiation effect on the Si(001)-c(4 x 2) surface was investigated by using low-energy electron diffraction. Quarter-order spots become dim and streaky by EB irradiation below approximately 40 K, indicating a disordering in the c(4 x 2) arrangement of buckled dimers. A quantitative analysis of decreasing rates of the spot intensity at various conditions of beam current, beam energy, and substrate temperature leads to a proposal for a mechanism of the disordering in the buckled-dimer arrangement in terms of electronic excitation, electron-phonon coupling, and carrier concentration.     

Switching of GaAs(001) termination by action of molecular iodine

This paper presents experimental results of an ultrahigh vacuum study of 4 × 2/c(8 × 2) → 2 × 4/c(2 × 8) structural transition on GaAs(001) caused by the thermal removal of the saturated iodine monolayer formed at GaAs(001)-4 × 2/c(8 × 2). It has been found out that the original c(8 × 2) low energy electron diffraction pattern transforms into 4 × 1 at 0.6 ML of iodine coverage and then keeps up to its saturation at 1.0 ML. We have determined that GaI is the only chemical product of the iodine action, its double peak was observed in the thermal desorption spectra at T = 150–370°C. The explanation of surface processes underlying 4 × 2/c(8 × 2) → 2 × 4/c(2 × 8) phase transition is presented below.     

GaAs(001) surface under conditions of low As pressure: evidence for a novel surface geometry

Using density-functional theory we identify a new low-energy structure for GaAs(001) in an As-poor environment. The discovered geometry is qualitatively different from the usual surface-dimer based reconstructions of III-V semiconductor (001) surfaces. The stability of the new structure, which has a c(8x2) periodicity, is explained in terms of bond saturation and favorable electrostatic interactions between surface atoms. Simulated scanning tunneling microscopy images are in good agreement with experimental data, and a low-energy electron diffraction analysis supports the theoretical prediction.