Effect of heat treatment on electronic phase in underdoped La2-xSrxCuO4 single crystal

Superconducting La1.937Sr0.063CuO4 crystals grown by the travelling-solvent floating-zone technique were thermally treated under various temperatures and oxygen pressures for moderately adjusting the oxygen content. The response of intrinsic electronic property of the crystals to the change of hole density in La2-xSrxCuO4 in the vicinity of the magic doping of x= 1/16 （= 0.0625） is studied in detail by magnetic measurements under various fields up to 1 T. It is found that when the superconducting critical temperature （Tc） increases with the oxygen content, there appears also a new subtle electronic state that can be detected from the differential curves of diamagnetic susceptibility dx/dT of the crystal sample. In contrast with the intrinsic state, the new subtle electronic state is very fragile under the magnetic fields. Our results indicate that a moderate change in oxygen doping does not significantly modify the intrinsic electronic state originally existing at the magic doping level.     

Anisotropic transport and optical properties of superconducting (La1-xSrx)2CuO4 single crystal thin films

An experimental study on the resistivity, Hall coefficient, upper critical field, and optical reflection and transmission characteristics is described for single-crystalline superconducting (La_1-xSr_x)₂CuO₄ thin films epitaxially grown on SrTiO₃ single crystal substrates by rf magnetron sputtering. These properties exhibit pronounced anisotropy between the c-axis direction and the Cu-O plane. The characteristics are consistently explained from the point of view of the two-diemensional (2D) electronic structure. The most noteworthy implication of the experimental results is that the transport along the c-axis is far from an itinerant picture. This leads to the idea that the superconductivity in the series of cuprate materials is caused by the 2D electronic system arising from the Cu-O planes, and some interactions between them, which is not possibly due to itinerant carriers.     

Low-temperature phase transition in Ba2TiGe2O8

Previous work on Ba₂TiGe₂O₈ crystals has shown an unusual low-temperature (～ 223 K on cooling, ～ 273 K on heating) phase transition. Precession x-ray photographs on Ba₂TiGe₂O₈ single crystals show an incommensurate modulation along b*, and, for the first time, also along a*. Single crystal intensity data confirm the average structure in space group Cmm2. There is positional disorder in the pyrogermanate groups, and this is the probable cause for the modulated structure. The low-temperature phase transition is proposed to be a lock-in transition, with the modulation along a* locking in at a value of 1/3. Several properties, as well as other unusual features of the low-temperature phase transition, are discussed in light of the proposed lock-in transition. Domain studies show that the ferroelastic domains are unstable in the low-temperature phase.     

DSC study of superionic phase transition in (NH4)4H2(SeO4)3 single crystals

DSC and complex impedance studies of the protonic conductor (NH₄)₄H₂(SeO₄)₃, which undergoes a superionic phase transition of first order at T_s = 378 K show that the activation energy of ionic conductivity d(lg σ)/dt and the ordering enthalpy ΔC_p of the crystal are proportional: d(lg σ)/dT = XΔC_p/RT_s + const, as found for MAg₄I₅ crystals undergoing a second-order superionic phase transition. Thus the short-range order environment of the species involved in fast-ion transport plays the main role in the superionic phase transition. This is also supported by the value of the entropy change at T_s, ΔS = 43 J/mole·K. A new metastable phase was found to be induced on heating the (NH₄)₄H₂(SeO₄)₃ crystal above T_s.     

A new high-pressure polymorph of Ti2O3: implication for high-pressure phase transition in sesquioxides

The post-corundum phase transition has been investigated in Ti₂O₃ on the basis of synchrotron X-ray diffraction in a diamond anvil cell and transmission electron microscopy. The new polymorph of Ti₂O₃ was found at about 19 GPa and 1850 K, and this phase was stable even at about 40 GPa. A new polymorph of Ti₂O₃ can be indexed on a Pnma orthorhombic cell, and the unit-cell parameters are a=7.6965 (19) Å, b=2.8009 (9) Å, c=7.9300 (23) Å, V=170.95 (15) Å³ at 19 GPa, and a=7.8240 (2) Å, b=2.8502 (1) Å, c=8.1209 (3) Å, V=181.10 (1) Å³ at ambient conditions. The Birch–Murnaghan equation of state yields K ₀=206 (3) GPa and K′₀=4 (fixed) for corundum phase, and K ₀=296 (4) GPa and K′₀=4 (fixed) for the post-corundum phase. The molar volume decreases by 12% across the phase transition at around 20 GPa. The structural identification was carried out on a recovered sample by the Rietveld method, and a new polymorph of Ti₂O₃ can be identified as Th₂S₃-type rather than U₂S₃-type structure. The transition from corundum-type to Th₂S₃-type structure accompanies the drastic change of the form of polyhedron: from TiO₆ octahedron in the corundum-type to TiO₇ polyhedron in the Th₂S₃-type structures.     

Eu2－xPbxRu2O7中的金属-绝缘体相变和自旋玻璃态行为

通过对Eu_2-xPb_xRu₂O₇(x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0和1.8)系列样品的结构、电阻和磁化率的观测，结果发现，随着Pb替代浓度x值的增加，样品的电阻率逐渐减小，系统在x=0.8附近发生了金属-绝缘体(M-I)相变；Ru⁴⁺的局域磁矩及其自旋玻璃冻结温度T_G也随之降低. 在该体系中，Pb²⁺对Eu³⁺的部分替代使样品中载流子浓度增加，Pb的6p能带与Ru 4d电子的T_2g能带混合，能带得以拓宽，Ru 4d电子的巡游性增强，导致该体系物性的系列变化. 关键词： 自旋几何受挫 2-xPb_xRu₂O₇体系')" href="#">Eu_2-xPb_xRu₂O₇体系 金属-绝缘体相变 自旋玻璃态     

The magnetic properties of diluted CoFe2O4 nanomaterials

The magnetic properties of （Cox Fe1-x）A （Zn1-x Fe1＋x）B O4 are studied using mean-field theory and the probability distribution law to obtain the saturation magnetization, the coercive field, the critical temperature, and the exchange interactions with different values of D （nm） and x. High-temperature series expansions （HTSEs） combined with the Pade approximant are used to calculate the critical temperature of （CoxFe1-x）A（Znl-xFe1＋x）BO4, and the critical exponent associated with magnetic susceptibility is obtained.     

Double-ceramic-layer thermal barrier coatings based on La2(Zr0.7Ce0.3)2O7/La2Ce2O7 deposited by electron beam-physical vapor deposition

Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La₂(Zr_0.7Ce_0.3)₂O₇ (LZ7C3) and La₂Ce₂O₇ (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO₃ is formed due to the chemical reaction between LC and Al₂O₃ which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.     

The effect of Si surface nitridation on the interfacial structure and electrical properties of (La2O3)0.5(SiO2)0.5 high-k gate dielectric films

Thermal stability, interfacial structures and electrical properties of amorphous (La₂O₃)_0.5(SiO₂)_0.5 (LSO) films deposited by using pulsed laser deposition (PLD) on Si (1 0 0) and NH₃ nitrided Si (1 0 0) substrates were comparatively investigated. The LSO films keep the amorphous state up to a high annealing temperature of 900 °C. HRTEM observations and XPS analyses showed that the surface nitridation of silicon wafer using NH₃ can result in the formation of the passivation layer, which effectively suppresses the excessive growth of the interfacial layer between LSO film and silicon wafer after high-temperature annealing process. The Pt/LSO/nitrided Si capacitors annealed at high temperature exhibit smaller CET and EOT, a less flatband voltage shift, a negligible hysteresis loop, a smaller equivalent dielectric charge density, and a much lower gate leakage current density as compared with that of the Pt/LSO/Si capacitors without Si surface nitridation.     

Microstructures and microwave dielectric properties of La1-xBx(Mg0.5Sn0.5)O3 ceramics

The microwave dielectric properties of La_1-xB_x(Mg_0.5Sn_0.5)O₃ ceramics were examined with a view to their exploitation for mobile communication. The La_1-xB_x(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method with various sintering temperatures. The X-ray diffraction patterns of the La_0.995B_0.005(Mg_0.5Sn_0.5)O₃ ceramics revealed no significant variation of phase with sintering temperatures. A maximum apparent density of 6.58 g/cm³, a dielectric constant (ε_r) of 19.8, a quality factor (Q × f) of 41,800 GHz, and a temperature coefficient of resonant frequency (τ_f) of −86 ppm/°C were obtained for La_0.995B_0.005(Mg_0.5Sn_0.5)O₃ ceramics that were sintered at 1500 °C for 4 h.     

Pressure effect on the magnetic phase diagram of Hf1-xTaxFe2 alloys

Abstract

The lattice constants of Hf_1-xTa_xFe₂ with C14 structure were measured at room temperature under pressure up to 5 GPa. The magnetic phase diagram obtained as a function of pressure was compared with that obtained as a function of Ta concentration x. It is shown that changes in lattice constants by applying pressure and /or by substituting Ta for Hf affect remarkably the magnetic phase stability, which is consistent qualitatively with a recent theoretical prediction based on the local spin density approximation.     

The monoclinic/orthorhombic phase transition in Ba2Cu(HCOO)6: An optical and x-ray powder diffraction study

α-Ba₂Cu(HCOO)₆ grown at room temperature crystallizes in space group P2₁. On heating a reversible, hysteretic, equitranslational, first-order phase transition at about 60-90°C takes place. Here we discuss the influence of thermal treatments on the occurrence, coexistence and stability ranges of the two observed phases, as studied by several techniques (optical microscopy, differential scanning calorimetry and X-ray diffraction). On cooling a single set of domain walls parallel to (001) have been observed. Taking into account experimental results and the crystal pseudosymmetry of the α phase we propose that the high-temperature β phase crystallizes in space group Pbnm.     

Crystal structure and magnetic properties of Nd（Mn1-xFex）2Si2 compounds

X-ray powder diffraction,resistivity and magnetization studies have been performed on polycrystalline Nd(FexMn1-x)2Si2 (0 ≤ x ≤ 1) compounds which crystallize in a ThCr2Si2-type structure with the space group I4/mmm.The field-cooled temperature dependence of the magnetization curves shows that,at low temperatures,NdFe2Si2 is antiferromagnetic,while the other compounds show ferromagnetic behaviour.The substitution of Fe for Mn leads to a decrease in lattice parameters a,c and unit-cell volume V .The Curie temperature of the compounds first increases,reaches a maximum around x = 0.7,then decreases with Fe content.However,the saturation magnetization decreases monotonically with increasing Fe content.This Fe concentration dependent magnetization of Nd(FexMn1-x)2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe.The temperature’s square dependence on electrical resistivity indicates that the curve of Nd(Fe0.6Mn0.4)2Si2 has a quasi-linear character above its Curie temperature,which is typical of simple metals.     

Structures and magnetic anisotropy of β-Mn2V2O7 crystals synthesized by the molten salt method

β-Mn2V2O7 crystals with strip shape are successfully prepared by the molten salt method in a closed crucible,and are characterized by x-ray diffraction (XRD),scanning electron microscopy (SEM),transmission electron microscopy (TEM),selected area of electron diffraction (SAED) and high-resolution transmission electron microscopy (HRTEM).The results indicate that the sample is of the β-Mn2V2O7 crystal with monoclinic symmetry,level natural cleavage facets and directional growth.Magnetic properties are measured by vibration sample magnetometry (VSM) at room temperature,and the magnetic hysteresis loop indicates that the β-Mn2V2O7 has anti-ferromagnetic properties with low coercive force and remnant magnetization.The magnetic measurement results in different directions exhibit that the β-Mn2V2O7 has magnetic anisotropy,which is due to the fact that the magnetic interaction energy of the β-Mn2V2O7 is lowest only when the electron configuration is in a certain direction.     

A neutron diffraction study of the high pressure structural phase transition in (CD3ND3)2MnCl4

Abstract

High-pressure neutron diffraction experiments have been performed at room temperature on a powdered sample of the perovskite type-layer compound (CD₃ND₃)₂MnCl₄. A phase transition from the orthorhombic room-temperature phase (ORT) to a new high-pressure phase (HP) is demonstrated at 20.5 ± 0.2 kbars. A monoclinic unit cell with lattice parameters a = 6.824 (5) Å; b = 7.409 (8) Å c = 17.126 (12) Å and β = 82.94(9)° has been inferred for the HP phase, consistent with a two-dimensional perovskite-type structure. The HP phase appears to be much more compact than ORT; it is characterized, in particular, by an important compression (?10%) of the inter-layer distance. Space groups P2/c or P2₁/c consistent with the experimental data have been deduced for the HP phase, after group theoretical considerations based on shear transformation and order-disorder mechanisms.     

X-ray study of the low-temperature phase transition in K2CoCl4

Precise lattice parameter measurements and intensity measurements of selected main and satellite reflections of K₂CoCl₄ have been performed in the temperature range 100 to 300 K in the vicinity of the low-temperature phase transition (commensurate-commensurate phase transition, T _c = 142 K). A broadening of the FWHM for the h01 reflections was observed below 142 K which suggests a transition from an orthorhombic phase to a monoclinic phase.     

Study of oxygen vacancy ordering in mullite at high temperatures

High temperature X-ray diffraction and quenching experiments of mullite single crystals with Al₂O₃:SiO₂ ratio 2:1 have been performed to investigate the stability of the oxygen vacancy ordering close to the melting point of mullite. The experiments show that the structure of mullite exhibits an extremely stable, temperature-independent incommensurate modulation. Inspection of satellite reflections at different temperatures leads to the conclusion that the ordering scheme of oxygen vacancies after the crystallization of mullite persists to the melting point and does not show any disordering effects. The experimental results are in agreement with former theoretical calculations using a statistical mechanics approach which yield the critical temperature T_c > 3000°C.     

Improving microwave dielectric properties of La2.98/3Sr0.01(Mg0.5Sn0.5)O3 ceramics with CuO additive

The microwave dielectric properties of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were investigated with a view to their application in microwave devices. CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were prepared by the conventional solid-state method. The X-ray diffraction patterns of CuO-doped La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics exhibited no significant variation of phase with sintering temperature. By adding 0.75 wt.% CuO, a dielectric constant of 20.07, a quality factor (Q × f) of 63,000 GHz, and a temperature coefficient of resonant frequency τ_f (−77.0 ppm/°C) were obtained when La_2.98/3Sr_0.01(Mg_0.5Sn_0.5)O₃ ceramics were sintered at 1500 °C for 4 h.     

Orthorhombic to tetragonal phase transition in high TC superconductor YBa2Cu3O7-y and NdBa2Cu3O7-z under high pressure

Abstract

X-ray powder diffraction measurements for YBa₂Cu₃O_7-y and NdBa₂Cu₃O_7-y were made at the intense synchrotron radiation source under high pressure up to 5 GPa. These samples were wrapped tightly in platinum foil to avoid deoxidizing atmosphere. The orthorhombic to tetragonal transition temperature increases with pressure in both samples. These results are discussed on the basis of the disordering of the oxygen atoms on the chain sites.     

Phonon-assisted luminescence anomalies in Eu2+ doped Ca1-xSrxF2 mixed crystals

Abstract

With increasing X on Ca_1-xSr_xF₂ mixed crystals doped with Eu²⁺ (4f⁶5d) ions, the absorption peak shifted linearly to that of SrF₂:Eu, while the luminescence one moved parabolically with a minimum at around x=0.5. The linewidth broadened nearly twice as large as that of CaF₂ in the vicinity of x=0.5 and subsequently renarrowed for x > 0.5. The temperature dependences of the luminescence intensity and life time revealed that the nonradiative activation energy has a minimum of 0.40 eV around x=0.5. From the calculated result of the lineshape, these non-linear behaviors against x were explained by adjusting the electron-phonon coupling strength.