Theory for the Exciton Magnetic Polaron in Diluted Magnetic Semiconductors with Thermodynamic Fluctuations of Magnetization

The photoinduced self-trapped exciton magnetic polaron (ST-EMP) in diluted magnetic semiconductors has been the subject of intensive investigations related to the observed photoluminescence during the last two decades. The stability, however, seems still controversial. In this article we study the stability of ST-EMP theoretically, including thermodynamic fluctuations of magnetization. The calculation suggests that the EMP in CdTe(Mn) (Mn: 10-20%) is not self-trapped except at low temperatures below ¨ 1 K, but the other primary localization mechanisms, for example, alloy potential fluctuations, are necessary to the localization of EMP above ¨ 1 K.     

Magnetic properties of (Ga,Mn)N ternaries and structural,electronic, and magnetic properties of cation-mixed (Ga,Mn)(As,N) and (In,Mn)(As,N) quaternaries

ABINIT simulation package with built in local density, generalized gradient, and spin local density approximations was used to investigate the structural, electronic, and magnetic properties of cation mixed (Ga,Mn)(As,N) and (In,Mn)(As,N) quaternaries with equal and fixed compositions of Ga, In, and Mn atoms. In particular, total energy minimization approach was used to compute the equilibrium structural parameters of zinc-blende (GaAs, InAs, and MnAs), wurtzite (GaN, InN, and MnN) binary parent compounds, as well as, the corresponding equilibrium parameters of (Ga,Mn)(As,N) and (In,Mn)(As,N) quaternary systems. The band structures of zinc-blende GaAs, InAs, and MnAs binary parent compounds were computed and analyzed. Spin polarized band structures of the cation mixed (Ga,Mn)(As,N) and (In,Mn)(As,N) quaternaries with equal compositions of Ga, In, and Mn cations were computed and analyzed using spin local density approximation based calculations. Moreover, the magnetic properties of (Ga,Mn)(As,N) and (In,Mn)(As,N) quaternaries with equal concentration of Ga, In, and Mn cations were investigated. Our results suggest that the two quaternary systems are nonmagnetic. An interpretation of our results is presented. In addition, the magnetic properties of (Ga,Mn)N nanocrystal ternaries constructed from doping GaN with one or two Mn atoms were investigated using Vienna Ab-initio Simulation Package (VASP) and compared with those of (Ga,Mn)(As,N) quaternaries.     

稀磁半导体(Ga,Mn)As薄膜激光诱导超快磁化动力学过程拟合方法探究

本文对稀磁半导体(Ga, Mn)As薄膜中超快激光诱导磁化动力学响应信号的不同拟合方法进行了对比分析. 通过Landau-Lifshitz-Gilbert(LLG)方程的数值拟合发现, 由于薄膜平面内和平面外磁光响应强度不同, 磁矢量三维进动的叠加可以导致多个频率振动模式的假象. 当使用高于(Ga, Mn)As带边的能量激发时, 磁化进动的磁光响应信号中叠加着来自光极化载流子的响应, 此时单纯利用LLG方程对薄膜整体磁化动力学过程拟合应谨慎使用. 本工作为正确分析和理解脉冲激光对(Ga, Mn)As铁磁性的超快调控提供了拟合方法上的指导.     

Growth and properties of self‐catalyzed (In,Mn)As nanowires

Mn‐assisted molecular beam epitaxy is used for the growth of (In,Mn)As nanowires (NWs) on GaAs(111)B. The transmission electron microscopy measurements revealed that despite the relatively high growth temperature regime this technique can be used to obtain (In,Mn)As NWs with high crystalline quality without any crystal defects, such as dislocations, stacking faults or precipitates inside the investigated NWs or on their side‐walls, although the growth processes of NWs were accompanied by the formation of MnAs precipitates between the NWs at the interface of the wetting layer. The results obtained are of importance for the realization of new spintronic nanostructured materials. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Annealing effect on magnetic anisotropy in ultrathin（Ga,Mn）As

We investigated the effect of low temperature annealing on magnetic anisotropy in 7-nm ultrathin Ga0.94Mn0.06As devices by measuring the angle-dependent planar Hall resistance(PHR).Obvious hysteresis loops were observed during the magnetization reversal through the clockwise and counterclockwise rotations under low magnetic fields(below 1000 Gs,1 Gs = 10-4 T),which can be explained by competition between Zeeman energy and magnetic anisotropic energy.It is found that the uniaxial anisotropy is dominant in the whole measured ferromagnetic range for both the as-grown ultrathin Ga0.94Mn0.06As and the annealed one.The cubic anisotropy changes more than the uniaxial anisotropy in the measured temperature ranges after annealing.This gives a useful way to tune the magnetic anisotropy of ultrathin(Ga,Mn)As devices.     

Spin-wave resonance as a tool for probing surface anisotropies in ferromagnetic thin films: Application to the study of (Ga,Mn)As

In this paper we provide a concise review of present achievements in the study of spin-wave resonance (SWR) in ferromagnetic semiconductor (Ga,Mn)As thin films. The theoretical treatment of the experimental SWR data obtained so far concentrates specifically on the spherical surface pinning (SSP) model, in which the surface spin pinning energy is expressed by configuration angles (the out-of-plane polar angle $?$ and the in-plane azimuthal angle $\phi$) defining the direction of surface magnetization in the considered thin film. The model is based on a series expansion of the surface spin pinning energy; the terms in the series represent the respective pinning contributions from the cubic anisotropy as well as uniaxial anisotropies. Comparing theory with the reported experimental studies of SWR in thin films of the ferromagnetic semiconductor (Ga,Mn)As, we find that besides the first-order cubic anisotropy, higher-order cubic anisotropies (in the second and third orders) as well as uniaxial anisotropies (perpendicular in the first and second orders, and in-plane diagonal) occur on the surface of this material. We use our results to plot a 3D hypersurface visualizing the angle dependence of the surface spin pinning energy in configurational space. An advantage of this spatial representation is that the shape of the obtained hypersurface allows us to predict new SWR effects that have not yet been observed experimentally. Prospective experimental studies for the verification of this surface pinning model would bring new insight into the surface anisotropy phenomenon in (Ga,Mn)As thin films and help complete the knowledge in this field, the shortage of which in the literature available to date is becoming bothersome.     

(In, Mn)As nanowires with ultrahigh Mn concentration: Growth, morphology and magnetic anisotropy

(In,Mn)As nanowires with ultrahigh Mn concentration have been successfully grown on GaAs(001) substrates by molecular beam epitaxy. The morphology dependences on Mn concentration and growth temperature are investigated. High Mn concentration and high growth temperature are both necessary for the growth of nanowires. All the (In,Mn)As nanowires are self-aligned along [−110]GaAs, and therefore have the shape magnetic anisotropy with the easy axis along the alignment orientation of the nanowires.     

Linear and nonlinear AC susceptibility studies in La(Mn1−xCux)O3

The linear and nonlinear AC susceptibility as a function of temperature were measured on LaMn_1−xCu_xO₃ compounds for x=0.05–0.30$x=0.05–0.30$. Samples with x?0.10$x?0.10$ exhibit paramagnetic to ferromagnetic transitions followed by low temperature spin glass like transition. The linear susceptibility exhibits strong frequency dependence and is analyzed in terms of standard theoretical model for spin glass. The magnitude and peak temperature of nonlinear susceptibility vary with AC field amplitudes. They are analyzed in terms of critical behaviour in the vicinity of spin glass transition temperature and the critical exponent is found to be 3.2.     

Hierarchic Natures and Dynamics of Photoinduced Structural Phase Transition in Non-Degenerate Charge Density Wave States Via Successive Photoexcitations

We investigate the adiabatic and dynamical natures of the lattice relaxation of excitons in strongly coupled electron-phonon (e-ph) systems using the extended Peierls-Hubbard model, so as to clarify the possible mechanisms of the photoinduced structural phase transition (PISPT) via multi-photon. Focusing on the growth process of relaxed domains that is induced by multi-photoexcitation, we calculate the adiabatic potential energy surfaces relevant to the nonlinear lattice relaxations of excitons in this process. Calculated potentials lead to an essential model of a multi-stepwise potential-crossing (MSPC) system that is composed of many displaced harmonic oscillators as an elementary process of the domain growth in the strongly coupled e-ph systems. We also investigate the dynamical natures in such MSPC systems calculating the time-developments the excited wave packet in this system using the density operator. It is concluded from calculated results that the system possibly develops from the lowest-energy potential state to the higher ones by the effect of the photoexcitations followed by the lattice relaxations.     

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells – a review

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)₂ thin films for high‐efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep‐defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley–Read–Hall recombination is still enhanced with respect to defect‐free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)₂ thin films with two‐dimensional device simulations suggest that these defects are one origin of the reduced open‐circuit voltage of the photovoltaic devices. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Growth of Sn(O,S)2 buffer layers and its application to Cu(In,Ga)Se2 solar cells

Sn-based thin films as new buffer layer for Cd-free Cu(In,Ga)Se₂ (CIGS) solar cells were developed. The Sn(O,S)₂ films were formed on CIGS substrates by chemical bath deposition from an alkaline ammonia solution by reacting tin(IV) chloride with thiourea. Optimization of the growth process allowed the smooth and conformal coverage of the films on the CIGS substrates with a thickness of 20 nm that was a self-limited thickness in the chemical bath deposition process. XPS analysis revealed that the as-deposited films contained Sn–O, Sn–OH, and Sn–S bondings and the ratio of Sn–S bonding to Sn–O bonding was 0.3. The CIGS solar cell fabricated with a 20-nm thick Sn(O,S)₂ buffer layer had the best efficiency of 11.5% without AR coating. The open circuit voltage, short circuit current, and fill factor were 0.55 V, 34.4 mA/cm², and FF = 0.61, respectively. The open circuit voltage and fill factor were low compared to the conventional CIGS solar cell with a 50-nm thick CdS buffer due to too thin Sn(O,S)₂ buffer layer.     

Unconventional magnetic and transport properties in Gd1−xLaxMn2Ge2 with two-dimensional arrangement of Mn atoms

In this paper, we present our recent experimental results of magnetic and transport properties of Gd_1−xLa_xMn₂Ge₂ intermetallic compounds with the ThCr₂Si₂-type layered structure. The results obtained indicate that, in GdMn₂Ge₂, a first-order transition from a collinear antiferromagnetic to a collinear ferrimagnetic state appears with decreasing temperature at T_t3, below the Néel temperature T_N. In Gd_1−xLa_xMn₂Ge₂ compounds with x=0.05 and 0.075, after ordering ferrimagnetically at T_t1, two kinds of first-order transitions from a canted ferrimagnetic to a non-collinear antiferromagnetic state and from a non-collinear antiferromagnetic to a reentrant canted ferrimagnetic state occur at T_t2 and T_t3. In Gd_0.925La_0.075Mn₂Ge₂, a field-induced metamagnetic transition from non-collinear antiferromagnetism to canted ferrimagnetism occurs at relatively low fields, accompanied by fractal like multi-step transitions, the so called “devil's stair-case”. Furthermore, a negative giant magnetoresistance (GMR) effect (Δρ/ρ15%) was observed at the field-induced metamagnetic transition. The mechanism of this negative GMR was clarified by comprehensive measurements of the resistivity on single crystals Gd_0.925La_0.075Mn₂Ge₂ and TbMn₂Ge₂. With further increasing x, only canted ferrimagnetism appears with a compensation temperature for 0.10<x<0.40, whereas no compensation behavior appears for x>0.50. The phase diagram obtained indicates that the overall magnetism is controlled by the Mn–Mn intralayer distance in the tetragonal c-plane, reflecting the two-dimensional arrangement of Mn atoms.     

Magnetic dipole and electric quadrupole responses of elliptic quantum dots in magnetic fields

The magnetic dipole (M1) and electric quadupole (E2) responses of two-dimensional quantum dots with an elliptic shape are theoretically investigated as a function of the dot deformation and applied static magnetic field. Neglecting the electron-electron interaction we obtain analytical results which indicate the existence of four characteristic modes, with different B-dispersion of their energies and associated strengths. Interaction effects are numerically studied within the time-dependent local-spin-density and Hartree approximations, assessing the validity of the non-interacting picture. Received 29 November 2001 Published online 6 June 2002     

Charge fluctuation,charge ordering,and zero-gap state in organic conductors

We have carried out a series of measurements of angular dependence of solid-state NMR spectrum using single crystal samples on various organic molecular conductors, in order to investigate the natures of the electronic states at low temperatures. We confirmed a charge ordered insulating state in α-(BEDT-TTF)₂I₃ and large charge disproportionation in the metallic state of this salt. In another charge ordered system, θ-(BEDT-TTF)₂RbZn(SCN)₄, we observed unusual NMR line broadening, proportional to resonance shift, in the metallic state above the transition. We found that this broadening is due to charge disproportionation, or more correctly, due to the inhomogeneity of local susceptibility at nuclear sites and analyzed its dynamics. We observed similar broadening in various organic molecular conductors as well, such as θ-(BEDT-TTF)₂CsZn(SCN)₄, an exotic Bechgaad salt, (TMTSF)₂FSO₃, and λ-type BETS salts, λ-(BETS)₂(Fe,Ga)Cl₄. We found the mechanism of CD in each system is different, respectively.     

Theoretical studies of the optical and EPR spectra for Fe ion in the MF3:Fe (M=Al, Ga) systems

By analyzing the EPR spectra of Fe³⁺ ion in the fluorinde glasses, the local lattice structures around impurity Fe³⁺ ion in MF₃:Fe³⁺ (M=Al, Ga) systems have been studied by means of diagonalizing the complete energy matrices of the electron-electron repulsion, the ligand-field and the spin-orbit coupling for a d⁵ configuration ion in a trigonal ligand-field. Both the second-order and fourth-order EPR parameters D and (a−F) are taken simultaneously in the structural investigation. The results indicate that the local lattice structure around octahedral Fe³⁺ center has an expansion distortion for Fe³⁺ in MF₃:Fe³⁺ (M=Al, Ga). The expansion distortion may be ascribed to the fact that the radius of Fe³⁺ ion is larger than that of Al³⁺ ion and Ga³⁺ ion, and the Fe³⁺ ion will push the fluoride ligands upwards and downwards, respectively. The local lattice structure parameters R=1.927 A, θ=55.538° for Fe³⁺ in AlF₃:Fe³⁺ and R=1.931 A, θ=56.09° for Fe³⁺ in GaF₃:Fe³⁺ are determined, respectively, and the EPR spectra of the MF₃:Fe³⁺ (M=Al, Ga) systems are satisfactorily explained.