多元纳米稀土六硼化物Nd1-xEuxB6粉末的制备及光吸收研究

在真空环境中采用固相烧结法成功制备出了多元稀土六硼化物Nd1-xEuxB6纳米粉末.系统研究了Eu掺杂对纳米NdB6物相、形貌及光吸收性能的影响规律.结果表明,所有合成的纳米粉末物相均为单相的CsCl型晶体结构,具有立方形貌,平均晶粒尺度为30 nm.光吸收实验结果表明,随着Eu掺杂量的增加,纳米NdB6透射光波长从629 nm红移至1000 nm以上,表现出了透射光波长的可调特性.此外,NdB6和EuB6同步辐射吸收图谱表明,Nd和Eu原子分别以Nd^3+和Eu^2+形式存在于纳米NdB6和EuB6中,充分说明了Eu掺杂使NdB6传导电子数量减少,从而导致其等离子共振频率能量的降低.采用第一性原理计算了NdB6和EuB6的能带结构、态密度、介电函数以及等离子共振频率能量,从而定性解释了Eu掺杂使NdB6透射光波长红移的特性.     

利用飞秒双光子光电子发射研究GaAs(100)的自旋动力学过程

超短激光技术的发展为研究材料中的超快光动方学过程提供了重要的实验手段，也使得人们 能够更为深入地研究电子的自旋动力学行为.GaAs(100)表面由于费米钉扎而会导致能带弯曲 ，位于该区域的电子及其自旋特性将会明显不同于体相材料中的情况.利用时间分辨和自旋 分辨的双光子光电子发射技术研究了p型掺杂GaAs(100)表面的电子极化动力学过程.结果表 明，由费米钉扎而引起的能带弯曲明显影响电子的自旋弛豫过程，从实验上观察到了GaAs(1 00)表面能带弯曲区域的电子自旋翻转时间存在近2个量级的差异(从几纳秒到几十皮秒)，基 于电子-自旋交换相互作用的BAP机理在自旋弛豫过程中起着主导作用. 关键词： 光物理 自旋极化 双光子光电子发射 砷化镓     

Tunneling conductance of a two-dimensional electron gas with Dresselhaus spin-orbit coupling

We theoretically studied the spin-dependent charge transport in a two-dimensional electron gas with Dresselhaus spin-orbit coupling (DSOC) and metal junctions. It is shown that the DSOC energy can be directly measured from the tunneling conductance spectrum. We found that spin polarization of the conductance in the propagation direction can be obtained by injecting from the DSOC system. We also considered the effect of the interfacial scattering barrier (both spin-flip and non-spin-flip scattering) on the overall conductance and the spin polarization of the conductance. It is found that the increase of spin-flip scattering can enhance the conductance under certain conditions. Moreover, both types of scattering can increase the spin polarization below the branches crossing of the energy band.     

Spin relaxation by transient monopolar and bipolar optical orientation

We have used two-color time-resolved spectroscopy to measure the relaxation of electron spin polarizations in a bulk semiconductor. The circularly polarized pump beam induces a polarization either by direct excitation from the valence band, or by free-carrier (Drude) absorption when tuned to an energy below the band gap. We find that the spin relaxation time, measured with picosecond time resolution by resonant induced Faraday rotation in both cases, increases in the presence of photogenerated holes. In the case of the material chosen, n-InSb, the increase was from 14 to 38 ps.     

Electronic-spin generation in multi-photon processes: Cubic anisotropy of pumping

We study the spin generation in multi-photon absorption processes in a bulk semiconductor, pumped it by a circularly polarized intense light by varying the angle of incidence. The generated spin polarization is calculated using the eight-band Kane model in the limit of large spin–orbit splitting and on the basis of the multi-photon photo-generation rate of the conduction electron spin density. It is found that the spin polarization strongly depends on the pumping photon energy outside the band edge. Cubic anisotropy in crystal pumping is also calculated. The results show that due to this anisotropy the spin generation differs by ∼8%, in consistence with earlier results obtained by others.     

本征GaAs中电子自旋极化的能量演化研究

采用时间分辨圆偏振光抽运-探测光谱,研究9.6 K温度下本征GaAs中电子自旋相干弛豫动力学,发现反映电子自旋相干的吸收量子拍的振幅随光子能量的增加呈非单调性变化.考虑自旋极化依赖的带填充效应和带隙重整化效应,发展了圆偏振光抽运-探测光谱的理论模型.该模型表明量子拍的振幅依赖于所探测能级的电子初始自旋极化度,自旋探测灵敏度以及带填充因子,三者的乘积导致了量子拍振幅的非单调变化,与实验结果一致.给出了能级分裂的二能级系统中电子自旋极化度定义.发现在高能级上可以获得100%的初始电子自旋极化度. 关键词： 圆偏振光抽运-探测光谱 吸收量子拍 电子自旋极化度 GaAs     

Thermoelectric response of spin polarization in Rashba spintronic systems

Motivated by the recent discovery of a strongly spin–orbit-coupled two-dimensional (2D) electron gas near the surface of Rashba semiconductors BiTeX (X= Cl, Br, I), we calculate the thermoelectric responses of spin polarization in a 2D Rashba model. By self-consistently determining the energyand band-dependent transport time, we present an exact solution of the linearized Boltzmann equation for elastic scattering. Using this solution, we find a non-Edelstein electric-field-induced spin polarization that is linear in the Fermi energy E_F when E_F lies below the band crossing point. The spin polarization efficiency, which is the electric-field-induced spin polarization divided by the driven electric current, increases for smaller E_F .We show that, as a function of E_F, the temperaturegradient-induced spin polarization increases continuously to a saturation value when EF decreases below the band crossing point. As the temperature tends to zero, the temperature-gradient-induced spin polarization vanishes.     

A new scheme for measuring itinerant spin polarizations

An optical method for the measurement of itinerant electron spin polarization is proposed. It is based on the idea that when an itinerant electron is injected into a p-type semiconductor with a valence band spin orbit splitting ? kT, the polarization of the resulting recombination radiation is characteristic of the spin polarization. The feasibility and advantages of this technique are discussed.     

Ab initio simulation of the electron structure and optical spectroscopy of ErRhGe compound

The results of investigation of the electronic structure and optical properties of ErRhGe are presented. The band spectrum of this compound is calculated in the local electron spin density approximation with correction for strong electron interactions in the 4f shell of the rare-earth metal (LSDA + U method) with allowance for the spin polarization. The optical constants of the compound are measured, and a number of spectral and electronic characteristics are determined by the ellipsometric method in a wide range of wave-lengths. Structural features of the optical conductivity spectrum in the interband absorption region are interpreted on the basis of the calculated electron state density.     

层状氧化钼的电子结构、磁和光学性质第一原理研究

按照基于自旋密度泛函理论的赝势平面波第一原理计算方法,理论研究了两种层堆叠结构氧化钼(正交和单斜MoO_3)的电子结构、磁性和光学特性,探讨其作为电致变色材料或电磁材料在光电子器件中的技术应用.采用先进的半局域GGA-PW91和非局域HSE06交换相关泛函精确计算晶体结构和带隙宽度.计算得出较低密排面解离能,表明两种层状氧化钼的单片层很容易从体材料上剥落.能带结构和投影态密度分析表明:导带底和价带顶电子态主要来自于层平面方向成键的原子轨道,呈现典型的二维电子结构特征.无缺陷的MoO_3块体材料具有明显的磁矩,O空位会导致磁矩增加;由Mo原子和顶点氧原子产生的亚铁磁耦合磁矩是MoO_3层状材料磁性的主要来源;层状氧化钼在可见光区具有明显的光吸收响应,光吸收谱表现出显著的各向异性并在带电时发生明显的蓝移或形成新的低频可见光吸收峰.计算结果证明层状氧化钼具有明显的电致变色和磁控性能,为设计高性能电磁或光电子功能材料提供了理论依据和技术数据.     

Carrier spin polarization in ferromagnet-semiconductor (Ga,Mn)As/GaAs structures

The effect of ferromagnetic layers on the spin polarization of holes and electrons in ferromagnet-semiconductor superlattices with a fixed Mn δ-layer thickness of 0.11 nm and different GaAs interlayer thicknesses varying in the range from 2.5 to 14.4 nm and a fixed number of periods (40) is studied by means of hot-electron photoluminescence (HPL). Here, our study of the HPL demonstrates that the holes in δ-layers of (Ga,Mn)As DMS occupy predominantly the Mn acceptor impurity band. The width of the impurity band decreases with the increase of the interlayer distance. We also found that an increase in the GaAs interlayer thickness softens the magnetic properties of the ferromagnetic layers as well as reduces the carrier polarization. It is demonstrated that the hole spin polarization in the DMS layers and spin polarization of electrons in nonmagnetic GaAs are proportional to the sample magnetization.     

Surface magnetism of iron on W(110)

Ultrathin bcc iron films grown epitaxially on W(110) have been investigated by means of angle and spin resolving photoelectron spectroscopy. The electron spin polarization, spin resolved intensities and corresponding band structure have been experimentally investigated in dependence of the film thickness, exciting photon energy and variation of the photoelectron detection angle. Additionally, photoemission calculations for bulk iron have been performed in the framework of a relativistic one-step formalism. The comparison between measured and calculated spectra turns out to be in very good agreement for different excitation energies as well as for different angles of emission.     

Electronic structure and magnetic, electrical and optical properties of ferromagnetic Heusler alloys

Measurements of the electrical resistivity and the Hall effect of the Heusler alloys NiMnSb, PtMnSb, CoMnSb, AuMnSb, CuMnSb and PtMnSn are reported. The anomalous Hall effect is analyzed in terms of the contributions from skew scattering and side jump. The spin polarization of the charge carriers is proportional to the magnetization. This is an indication that the electronic structure as a function of the temperature is best described by a local band model, with complete spin polarization of charge carriers parallel to the local magnetization at all temperatures. The spin disorder resistivity of NiMnSb is calculated with the local band model. The magneto-optical Kerr effect of PtMnSb is enhanced by the plasma resonance of the charge carriers.     

本征GaAs中电子自旋极化对电子复合动力学的影响研究

采用时间分辨圆偏振光和线偏振光抽运-探测光谱,研究了9.6 K温度下本征GaAs中自旋极化电子与非极化电子的复合动力学及其随光子能量演化.发现自旋极化对电子复合动力学具有显著影响.仅在导带底附近测量时,两种方法测试到的复合寿命一致,而在高过超能量电子态测量时,两种方法测试到的复合寿命不一致.指出时间分辨法拉第光谱中,用于反演求解电子自旋相干寿命的电子复合寿命应该使用圆偏振光抽运-探测获得的复合寿命,而不是线偏振光抽运-探测获得的寿命.理论计算与实验结果吻合较好. 关键词： 圆偏振光抽运-探测光谱 自旋量子拍 自旋极化 GaAs     

Evolution with composition of the d-band density of states at the Fermi level in highly spin polarized Co1-xFexS2

Highly spin polarized (SP) and half-metallic ferromagnetic systems are of considerable current interest and of potential importance for spintronic applications. Recent work has demonstrated that Co1-xFexS2 is a highly polarized ferromagnet (FM) where the spin polarization can be tuned by alloy composition. Using 59Co FM-NMR as a probe, we have measured the low-temperature spin relaxation in this system in magnetic fields from 0 to 1.0 T for 0相似文献   

Scanning tunneling microscopy chemical signature of point defects on the MoS2(0001) surface

Using ab initio calculations, we have studied the modification of the electronic structure of the MoS2(0001) surface by several point defects: a surface S vacancy and different transition metal atoms substituting a S atom (Pd, Au, Fe, and V). With a S vacancy, a gap state appears with weight mostly on the Mo and S atoms surrounding the vacancy. The substitutional atoms of complete d band (Pd and Au) do not present magnetic polarization and slightly modify the DOS near the Fermi energy. On the other hand, the incomplete d band atoms (Fe and V) present spin polarization and modify significantly the states near the band edges. From calculated STM images and STS curves, we show that this chemical signature can be measured and used to characterize the surface defects of the substrate which are suitable nucleation centers for nanocluster growth.     

Dynamic nuclear polarization in electron spin echo

It is shown that under the action of a proper microwave pulse sequence the equilibrium polarization of the electron spin may be transferred dynamically to the longitudinal nuclear magnetization which will oscillate due to the nuclear spin precession around the effective fields relating to differnt electron quantum number manifolds. These oscillations may be measured directly in the radiofrequency band. Analytical formulae are obtained for the case when all the nuclei coupled to an unpaired electron have spins of 1/2.     

Electron spin precession upon reflecting from ferromagnetic surfaces

Electrons with the polarization vector perpendicular to the magnetization of Fe, Co, and Ni films are spin analyzed after reflecting from the ferromagnet. At low primary electron energies a strong spin motion is found, namely, a precession of the polarization around the magnetization and a change of the angle between the polarization and the magnetization. This observation can be accounted for by the existence of spin-dependent gaps in the electronic band structure of the ferromagnets.     

Ferroelectric Controlled Spin Texture in Two-Dimensional NbOI_2 Monolayer

The persistent spin helix(PSH) system is considered to have promising applications in energy-conservation spintronics because it supports an extraordinarily long spin lifetime of carriers.Here,we predict that the existence of PSH state in two-dimensional(2 D) ferroelectric NbOI₂ monolayers.Our first-principles calculation results show that there exists Dresselhaus-type spin-orbit coupling(SOC) band splitting near the conduction-band minimum(CBM) of the NbOI₂ monolayer.It is...