力学性能对Bi-2223/Ag超导带材临界电流影响实验研究

本文主要研究了在77K温度下,拉伸应变和弯曲应变对Bi-2223/Ag超导带材临界电流的影响,得到了超导带材的临界电流随拉伸强度、曲率半径变化规律.实验结果显明,拉伸作用在超导带材上产生的形变对其临界电流(Ic)的影响存在一个临界值εirr=0.3%.形变小于此临界值,Ic变化较小,超过此临界值,临界电流急剧下降.弯曲实验同样存在类似关系.同步辐射光源对超导带材检测表明,在形变情况下,超导氧化物陶瓷芯的微裂纹迅速增加和交织是Ic降低的主要原因.     

Low-temperature fatigue behaviour and development of dislocation structure in aluminium single crystals with single-slip orientation

Al single crystals oriented for single slip were cyclically deformed under constant plastic strain amplitudes between 1?×?10^?3 and 5?×?10^?2 at 77?K. Al single crystals showed hardening to saturation at all applied shear stress amplitudes. The resultant cyclic stress–strain curve (CSSC) showed a stress plateau in a range of plastic strain amplitude from 2?×?10^?3 to 2?×?10^?2. Surface observation revealed that multiple slip systems were active even at the strain amplitude in the plateau region. At plastic strain amplitudes corresponding to the plateau of the CSSC, persistent slip bands (PSBs) were formed parallel to the primary slip plane. In the PSBs, well-developed dislocation walls parallel to the {100} planes were observed. The microstructure in the PSBs was explained by the fact of multiple activation of the primary and critical slip systems. The above results indicate that the high stacking fault energy of Al is an important factor affecting the fatigue behaviour even at 77?K.     

Thermomechanical response of an Ni–Ti–Cr shape-memory alloy at low and high strain rates

The thermomechanical response of an Ni–Ti–Cr shape-memory alloy is investigated at various initial temperatures, over a wide range of strain rates, using an Instron hydraulic testing machine and one of the modified split-Hopkinson-bar systems at the Center of Excellence for Advanced Materials, University of California, San Diego. The transition stress for the stress-induced martensite formation is observed to be quite sensitive to the initial deformation temperature, but the yield stress of the resulting martensite is not. The linear transition stress–temperature relation with a slope of 8.5?MPa?K^?1, obtained in a quasistatic loading regime, seems to remain valid for strain rates up to 500–700?s^?1. The transition stress and the yield stress of the stress-induced martensite show strain-rate sensitivity, increasing monotonically with increasing strain rate. There exists a certain critical strain rate at which the transition stress equals the yield stress of the material. This critical strain rate determines the material's deformation behaviour; the material deforms by the formation of stress-induced martensites and their subsequent yielding, when the strain rate is less than this critical value, and through dislocation-induced plastic slip of the parent austenite, when the strain rate exceeds the critical value. It appears that the critical strain rate increases slightly with decreasing initial temperature.     

Boundary entropy of one-dimensional quantum systems at low temperature

The boundary beta function generates the renormalization group acting on the universality classes of one-dimensional quantum systems with boundary which are critical in the bulk but not critical at the boundary. We prove a gradient formula for the boundary beta function, expressing it as the gradient of the boundary entropy s at fixed nonzero temperature. The gradient formula implies that s decreases under renormalization, except at critical points (where it stays constant). At a critical point, the number exp((s) is the "ground-state degeneracy," g, of Affleck and Ludwig, so we have proved their long-standing conjecture that g decreases under renormalization, from critical point to critical point. The gradient formula also implies that s decreases with temperature, except at critical points, where it is independent of temperature. It remains open whether the boundary entropy is always bounded below.     

Conservative ensembles for nonequilibrium lattice-gas systems

We show how to set up a constant particle ensemble for the steady state of nonequilibrium lattice-gas systems which originally are defined on a constant rate ensemble. We focus on nonequilibrium systems in which particles are created and annihilated on the sites of a lattice and described by a master equation. We consider also the case in which a quantity other than the number of particle is conserved. The conservative ensembles can be useful in the study of phase transitions and critical phenomena particularly discontinuous phase transitions.     

Strain effect on surface melting of Si(1 1 1)

We study the strain effect on the surface melting of Si(1 1 1) flat surfaces using Monte Carlo simulation and the empirical Tersoff–Dodson potential. The in-plane strain effect on the atomic structures and the atomic dynamics were investigated at a fixed temperature of 0.82T_m. Surface melting of Si(1 1 1) was induced by either compressive or tensile strain. As the strength of strain increases beyond the critical strength of about 1.5 and 2.5%, respectively, for compressive and tensile strain, the waiting time for surface melting decreases. In the lateral pair correlation function of the melting layers, only the nearest-neighbor correlation remains. Si atoms in the melting layers has a constant diffusion coefficient irrespective of the sign and strength of applied strain.     

Attenuation et dispersion d'ondes ultrasonores dans KMnF3 au voisinage de la transition de structure

The attenuation and the velocity of sound waves have been measured along (1,0,0) and (1,1,1) axes, in KMnF₃ single crystal, at 184°K. From these measurements the coupling constant between the strain and the critical mode have been determined.     

The Mechanism of Critical Strain of Serrated Yielding in Strain Rate Domain

The mechanism of the critical strain of serrated yielding is studied via tension tests at various strain rates.Before the critical strain,it is deduced that dislocations are not pinned at high strain rates,and dislocations at low strain rates are pinned but cannot escape.The critical strain depends on the first pinning process at high strain rates and on the first unpinning process at low strain rates.The calculated results based on the two criteria are in good consistency with the experiment.     

Effect of strain-induced electronic topological transitions on the superconducting properties of [Formula: See Text] thin films

We propose a Ginzburg-Landau phenomenological model for the dependence of the critical temperature on microscopic strain in tetragonal high-[Formula: See Text] cuprates. Such a model is in agreement with the experimental results for LSCO under epitaxial strain, as well as with the hydrostatic pressure dependence of [Formula: See Text] in most cuprates. In particular, a nonmonotonic dependence of [Formula: See Text] on hydrostatic pressure, as well as on in-plane or apical microstrain, is derived. From a microscopic point of view, such results can be understood as due to the proximity to an electronic topological transition (ETT). In the case of LSCO, we argue that such an ETT can be driven by a strain-induced modification of the band structure, at constant hole content, at variance with a doping-induced ETT, as is usually assumed.     

Localization of plastic deformation in calcium fluoride crystals at elevated temperatures

The strain distribution was experimentally studied in CaF₂ crystals subjected to compression tests along [110] and [112] at a constant strain rate at temperatures T = 373–1253 K. At T > 845 K, the plastic deformation in deformed samples is found to be strongly localized in narrow bands, where the shear strain reaches several hundred percent. The physical deformation conditions are determined under which the plastic flow loses its stability and, as a result, the deformation is localized. The temperature dependence of the critical stress of the transition to a localized flow is found. A scenario is proposed for the nucleation and development of large localized shears during high-temperature deformation of single crystals.     

Investigation on dislocation-based mechanisms of void growth and coalescence in single crystal and nanotwinned nickels by molecular dynamics simulation

Abstract

Molecular dynamics simulations were conducted to elucidate dislocation mechanisms of the void growth and coalescence in single crystal and nanotwinned nickels subjected to uniaxial tension. The simulation results reveal that twin boundary is capable of decreasing the critical stress, suppressing the emission of dislocations and reducing the overall stiffness of the crystal. A size-scale dependence of critical stress is definitely illustrated through stress–strain response, where the larger void size leads to the lower critical stress and strain. It is the successive emissions of leading partials and the subsequent trailing partials that cause the atoms on the void surfaces to escape from the void surfaces continually, and consequently the voids grow to be larger and larger with increasing strain. The voids in the nanotwinned nickel coalesce earlier than those in the single crystal nickel even though the initiation of dislocations in the former is later than that in the latter. Void fraction remains a constant during elastic deformation, while it presents a linear increase with increasing strain during plastic deformation. Evolution of void fraction during void growth and coalescence is independent on void size.     

Configurational thermostats for molecular systems

A new method of thermostatting non-equilibrium molecular dynamics (NEMD) simulations is described. The thermostat is based on a recently developed, entirely configurational expression for the temperature. To demonstrate this method, thermostatted NEMD simulations are performed on WCA atoms, linear, freely jointed Lennard-Jones 8-mer chains and a united-atom model of n-decane under a constant applied strain rate. The results of simulations thermostatted kinetically (the standard method) and configurationally are compared. As expected, both types of thermostat yield identical system properties for low strain rates. For higher strain rates, both thermostats yield the same qualitative dependence of system properties on applied strain rate. The great advantage of the configurational thermostat is that no a priori knowledge of the streaming velocity is required. For molecular systems and atomic systems in most flow geometries, the analytical form for the atomic streaming velocity is not known. This makes the implementation of standard kinetic thermostats highly problematic.     

Crossover Critical Behavior in the Three-Dimensional Ising Model

The character of critical behavior in physical systems depends on the range of interactions. In the limit of infinite range of the interactions, systems will exhibit mean-field critical behavior, i.e., critical behavior not affected by fluctuations of the order parameter. If the interaction range is finite, the critical behavior asymptotically close to the critical point is determined by fluctuations and the actual critical behavior depends on the particular universality class. A variety of systems, including fluids and anisotropic ferromagnets, belongs to the three-dimensional Ising universality class. Recent numerical studies of Ising models with different interaction ranges have revealed a spectacular crossover between the asymptotic fluctuation-induced critical behavior and mean-field-type critical behavior. In this work, we compare these numerical results with a crossover Landau model based on renormalization-group matching. For this purpose we consider an application of the crossover Landau model to the three-dimensional Ising model without fitting to any adjustable parameters. The crossover behavior of the critical susceptibility and of the order parameter is analyzed over a broad range (ten orders) of the scaled distance to the critical temperature. The dependence of the coupling constant on the interaction range, governing the crossover critical behavior, is discussed.     

Interplay of surface morphology, strain relief, and surface stress during surfactant mediated epitaxy of Ge on Si

Lattice-mismatch-induced surface or film stress has significant influence on the morphology of heteroepitaxial films. This is demonstrated using Sb surfactant-mediated epitaxy of Ge on Si(111). The surfactant forces a two-dimensional growth of a continous Ge film instead of islanding. Two qualitatively different growth regimes are observed. Elastic relaxation: Prior to the generation of strain-relieving defects the Ge film grows pseudomorphically with the Si lattice constant and is under strong compressive stress. The Ge film relieves strain by forming a rough surface on a nm scale which allows partial elastic relaxation towards the Ge bulk lattice constant. The unfavorable increase of surface area is outbalanced by the large decrease of strain energy. The change of film stress and surface morphology is monitored in situ during deposition at elevated temperature with surface stress-induced optical deflection and high-resolution spot profile analysis low-energy electron diffraction. Plastic relaxation: After a critical thickness the generation of dislocations is initiated. The rough phase acts as a nucleation center for dislocations. On Si(111) those misfit dislocations are arranged in a threefold quasi periodic array at the interface that accommodate exactly the different lattice constants of Ge and Si. Received: 1 April 1999 / Accepted: 17 August 1999 / Published online: 6 October 1999     

Uniaxial strain-modulated electronic structures of CdX (X = S,Se, Te) from first-principles calculations:A comparison between bulk and nanowires

Using first-principles calculations based on density functional theory, we systematically study the structural deformation and electronic properties of wurtzite CdX(X = S, Se, Te) bulk and nanowires(NWs) under uniaxial [0001] strain. Due to the intrinsic shrinking strain induced by surface contraction, large NWs with {10ˉ10} facets have heavy hole(HH)-like valence band maximum(VBM) states, while NWs with {11ˉ20} facets have crystal hole(CH)-like VBM states. The external uniaxial strain induces an HH–CH band crossing at a critical strain for both bulk and NWs, resulting in nonlinear variations in band gap and hole effective mass at VBM. Unlike the bulk phase, the critical strain of NWs highly depends on the character of the VBM state in the unstrained case, which is closely related to the size and facet of NWs. The critical strain of bulk is at compressive range, while the critical strain of NWs with HH-like and CH-like VBM appears at compressive and tensile strain, respectively. Due to the HH–CH band crossing, the charge distribution of the VBM state in NWs can also be tuned by the external uniaxial strain. Despite the complication of the VBM state, the electron effective mass at conduction band minimum(CBM) of NWs shows a linear relation with the CBM–HH energy difference, the same as the bulk material.     

Electronic,dielectric and mechanical properties of MoS2/SiC hybrid bilayer: A first principle study

The electronic, mechanical and dielectric properties of lateral MoS₂/SiC heterobilayer are investigated using first principles calculations. Among various stacking conformations, the energetically favorable stackings namely AA₂ and AB′₁ have been considered in the present study. The band gap of the heterobilayer shows reduction as compared to constituent monolayers which also remains stacking dependent. The electronic band-gap is further tunable by applying mechanical strain and perpendicular electric field that rendered heterostructures from semiconductor to metal at critical value of applied strain/field. The stacking of heterobilayer strongly influence its mechanical properties e.g. ultimate tensile strength of considered two favorable stacking differ by more than 50%; the ultimate tensile strain of 17% and 21% respectively has been calculated for two different stackings. The static dielectric constant also shows tunability on heterostructuring the constituent monolayers as well as applying strain and field. These tunable properties of MoS₂/SiC may be useful for the device applications at nanoscale.     

On self-organised criticality in one dimension

In critical phenomena, many of the characteristic features encountered in higher dimensions such as scaling, data collapse and associated critical exponents are also present in one dimension. Likewise for systems displaying self-organised criticality. We show that the one-dimensional Bak–Tang–Wiesenfeld sandpile model, although trivial, does indeed fall into the general framework of self-organised criticality. We also investigate the Oslo ricepile model, driven by adding slope units at the boundary or in the bulk. We determine the critical exponents by measuring the scaling of the kth moment of the avalanche size probability with system size. The avalanche size exponent depends on the type of drive but the avalanche dimension remains constant.     

Effect of plastic deformation at the crack tip in a crystal on the direction of the tip growth under a mixed load

Evolution of plastic deformation at the tip of a wedge-shaped crack in a crystal under planar strain (modes I and II) was calculated for different cleavage planes, easy-slip systems, angles at the wedge tip, and ratios of the external extension and shear loads. Time distributions are obtained for the plastic deformation, the effective shear stress, the stress intensity factor, and the crack growth direction under monotonic load of the crystal up to a specified limit and further relaxation to establishment of equilibrium distributions under a constant external load. Numerical calculations were performed for an α-Fe crystal.     

Normal forces of magnetorheological fluids under oscillatory shear

The normal forces of magnetorheological fluids under oscillatory shear are investigated by a commercial magneto-rheometer with plate-plate geometry. At the constant strain amplitude and frequency, the normal forces almost keep a steady value with the testing time if the strain amplitude is smaller than the critical value. When a larger strain is applied, they will fluctuate periodically. Under the strain sweep mode, the relationships between normal forces and strain amplitude can be divided into three regions: linear viscoelastic region, nonlinear viscoelastic region and the viscoplastic region. Under the frequency sweep method, it is found that the angular frequency show little influence on the normal forces. At last, the normal forces increase with increasing of the temperature under a low magnetic field, while they decrease under a high magnetic field.