ZnO薄膜/金刚石在不同激励条件下声表面波特性的计算与分析

本文首先以刚度矩阵法为基础, 给出了ZnO薄膜/金刚石在四种不同激励条件下的有效介电常数计算公式. 然后以此为工具, 分别计算了多晶ZnO(002) 薄膜/多晶金刚石和单晶ZnO(002) 薄膜/多晶金刚石的声表面波特性, 并根据计算结果及设计制作声表面波器件的要求, 对ZnO膜厚的选择进行了详细地分析. 最后讨论了ZnO/金刚石/Si复合晶片可以忽略Si衬底对声表面特性影响时对金刚石膜厚的要求. 关键词： 声表面波 压电多层结构 有效介电常数 刚度矩阵法     

碳纳米管-聚二甲基硅氧烷的光声特性

碳纳米管-聚二甲基硅氧烷(CNT-PDMS)是一种新型的激光超声换能器(LIU-T)复合材料,具有高频率、宽带宽、高振幅的特性。该复合薄膜可作为高效、鲁棒的超声发射器用于诊断和治疗。纳米复合材料的固有结构提供了独特的热、光学和机械性能,这不仅有利于能量转换,而且对脉冲激光烧蚀具有很好的鲁棒性。PDMS聚合物具有高热弹性系数有利于材料的伸缩从而产生超声。研究了几种不同复合薄膜产生的光声信号特性,测试了不同衬底和水介质条件下的光声信号特性。利用碳纳米材料的高吸光性和PDMS聚合物的高膨胀性制作激光超声换能器,不但降低了材料的厚度,还有望产生高频高强度超声信号。实验用硬玻璃衬底厚度约为1 mm,软薄膜衬底厚度在微米级,水介质条件下的厚度为3 mm。在脉冲激光激励下,水介质下软薄膜条件、硬玻璃衬底、软薄膜衬底涂层端面超声压力分别为2.0, 3.9和5.2 MPa。通过一系列的研究得出了结论:(1)软薄膜衬底(3×3)比硬玻璃衬底(3×3)更具有良好的负脉冲,更适合用在光声空化治疗方面;(2)水介质条件下不利于产生高强度光声信号。总而言之,采用激光超声换能器比压电换能器更具有产生高振福,带宽宽的超声信号的潜力,而且提供了一种没有电子等干扰结构的超声激励新方法,有望成为替代压电换能器的新一代激光超声换能器。这种新方法应用在磁声电成像领域可以大大减少超声激励源的干扰。同时,相对于将CNT混入PDMS中的方法,该方法更具有简单方便节省材料等优点。对于硬玻璃传统型衬底,实现的软薄膜衬底能产生较高的声压5.2 MPa,并且中心频率在5MHz,-6 dB超声带宽也相对较宽接近5MHz,相比于早在2014年实现的CNT-PDMS激光超声换能器产生的4.5 MPa声压,本文方法更具有临床应用前景,应用在磁声电成像等方面具有很好的避免电磁干扰效果。     

工作气压对ZnO:Mn薄膜结构特性的影响

利用射频磁控溅射方法在玻璃衬底上沉积了一系列ZnO:Mn薄膜,结合Raman光谱、XRD衍射谱和SEM分析了工作气压对ZnO:Mn薄膜结构特性的影响。Raman拟合光谱显示,在工作气压从1 Pa增加至4 Pa的过程中,ZnO:Mn薄膜始终保持着六角纤锌矿结构。但是,随着气压的降低,对应于E2(High)振动模式的Raman散射峰以及与Mn掺杂相关的特征峰左移,说明在低工作气压时,ZnO:Mn薄膜内晶格缺陷更多,晶格更加无序。这一结论也得到了XRD和SEM结果的证实。     

磁控溅射制备ZnO薄膜的受激发射特性的研究

用射频磁控反应溅射法在二氧化硅衬底上制备ZnO薄膜。得到了在不同温度下ZnO薄膜的吸收与光致发光。观测到了纵光学波 (LO)声子吸收峰与自由激子吸收峰 ;室温 (30 0K)下 ,PL谱中仅有自由激子发光峰。这些结果证实了ZnO薄膜具有较高的质量。探讨了变温ZnO薄膜的发光特性。研究了ZnO薄膜的受激发射特性。     

分子束外延生长的ZnO压电薄膜及其声表面波器件特性

用RF-MBE在蓝宝石(0001)衬底上引入MgO和低温ZnO双缓冲层生长了ZnO薄膜,并制备了声表面波器件。在ZnO薄膜中,仅观测到(0002)面的XRD,且衍射峰增强,半高宽减小,表明ZnO薄膜c轴取向性更好,晶体结构更优。室温下自由激子吸收峰更尖锐和吸收边更陡峭以及仅观测到自由激子发光,且发光线宽变窄、发光强度变大,表明ZnO薄膜缺陷密度减小,薄膜质量提高。测得该ZnO压电薄膜的电阻率高达4×10⁷ Ω·cm,其声表面波的速度高达5 010 m/s。     

ZnO/Si异质结的光电转换特性研究

利用直流反应溅射方法在p型Si衬底上生长掺Al的n型ZnO薄膜,测量了由n型ZnO薄膜和p型Si衬底组成的异质结在黑暗和光照条件下的I-V特性,结果表明该异质结具有优良的整流特性,而且在光照条件下的反向电流迅速增大并很快趋于饱和.通过测量ZnO薄膜的光电流和异质结的光电压的光谱响应,初步分析了异质结的光电转换机理.测量结果显示,在入射光波长为380nm时光电流强度明显下降,反映出光电流与ZnO薄膜禁带宽度的密切关系;同时还发现,在与ZnO禁带宽度相对应的波长前后所产生的光生电压方向相反.推测这一现象与异质结的能带结构密切相关. 关键词： ZnO薄膜 异质结 光电转换 光谱响应     

ZnO退火条件对硫化法制备的ZnS薄膜特性的影响

采用反应磁控溅射法在玻璃和石英衬底上沉积了ZnO薄膜, 然后经过不同条件退火和在H22S气氛中硫化最终得到ZnS薄膜. 用x射线粉末衍射仪、扫描电子显微镜和UV—VIS分光光度计 对ZnS薄膜样品进行了分析. 结果表明, ZnO薄膜硫化后的晶体结构和光学性质取决于它的退 火条件. 真空和纯O2₂中退火的ZnO薄膜硫化后只是部分形成六角晶系结构的ZnS . 而在空气 和纯N2₂中退火的ZnO薄膜则全部转变为ZnS, 在可见光范围内的光透过率 关键词： ZnS薄膜 磁控溅射 ZnO硫化 太阳电池     

P型半导体氧化锌薄膜的Raman光谱研究

本文主要对超声喷雾热解方法生长在本征Si衬底上的N－In共掺的p型ZnO薄膜的Raman光谱进行了研究。通过洛仑兹(Lorentz)模型和等离子激元与纵光学声子耦合模理论模型拟合不同浓度下的室温Raman光谱, 我们对样品的Raman峰进行了指认; 同时也得到了样品的空穴浓度和迁移率, 结果和霍耳测量得到的空穴浓度和迁移率符合的较好, 证明了霍耳测量p型ZnO薄膜得到的电学参数是可信的。随后我们又对不同浓度的p型ZnO薄膜的变温Raman光谱进行研究,运用一个详细的模型(考虑了晶格热膨胀、残余应力、和三声子、四声子衰变)描述不同浓度下各个样品Raman光谱中的等离子激元与纵光学声子耦合模随温度变化的情况。分析拟合参数, 可以清楚地了解随着浓度的增加耦合模参数随温度的衰变行为。     

光声光谱法研究光学薄膜的吸收特性

本文以“一维热流活塞模型”为基础,推导出薄膜光声表达式,光声信号的幅值正比于吸收率.测量了透明基底上光学薄膜的光声吸收谱,实验结果与理论一致.尤其是测量弱吸收薄膜的吸收谱时,具有较高的灵敏度和实用性.     

用卢瑟福背散射/沟道技术研究ZnO/Zn0.9 Mg0.1 O/ZnO异质结的弹性应变

利用卢瑟福背散射/沟道技术对射频等离子体辅助分子束外延法生长在蓝宝石衬底上的ZnO/Zn0.9Mg0.1O/ZnO异质结进行了组分分析,并得到了异质结弹性应变随深度的变化,应变由界面向表面逐渐释放,并由负变正,且在ZnO与Zn0.9Mg0.1O界面处轻微增大.负的应变是由于ZnO与衬底的晶格失配和热失配,而逐渐变为正值是Zn0.9Mg0.1O与ZnO的晶格常数差异及弹性应变的逐渐释放所致.     

纳米ZnO和ZnO-SiO2复合薄膜的光学性质研究

通过溶胶凝胶(sol-gel)法分别在玻璃衬底上制备了ZnO纳米薄膜和ZnO-SiO₂纳米复合薄膜,并利用紫外-可见光分光光度计对薄膜的光学性能进行了分析.可见光-紫外透射谱显示,随着ZnO溶胶浓度从0.7mol/L降低到0.006mol/L,制备的ZnO薄膜从只出现一个380nm(对应的光学禁带宽度为3.27eV)左右的吸收边到在380和320nm(对应的光学禁带宽度为3.76eV)左右各出现一个吸收边,并且随着ZnO溶胶浓度的降低,在380—320nm波段内的透过率明显提高.而Z 关键词： 纳米ZnO 2复合薄膜')" href="#">ZnO-SiO₂复合薄膜 溶胶凝胶法 透射率     

Influence of glucose on the structural and optical properties of ZnO thin films prepared by sol-gel method

In this work, ZnO thin films were prepared by sol-gel method on glass substrates followed by calcinations at 500 °C for an hour. The effect of glucose on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffractometer (XRD) and atomic force microscope (AFM). The optical properties were studied by a UV-visible spectrophotometer. The results show that some of the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure due to a proper amount of glucose introducing. After introducing the glucose additive in ZnO colloids, the intensity of (002) peak, the transmittance, and the optical band gap of the ZnO thin films increases because of the enhanced ZnO crystallization. On the contrary, the absorbance, the film thickness, and the surface root-mean-square (RMS) roughness of the ZnO thin films decreases. The glucose additive could not only improve the surface RMS roughness and microstructure of ZnO thin films, but also enhance the transmittance and the energy band gap more easily.     

Effect of annealing temperature on the structural and optical properties of ZnO thin films prepared by sol–gel method

In this work, ZnO thin films were synthesized by sol–gel method on glass substrates followed by calcinations on different temperatures. The effect of annealing temperature on the structure and optical properties of the films was studied. The structural characteristics of the samples were analyzed by X-ray diffraction and atomic force microscope. The optical properties were studied by a UV-visible spectrophotometer. The results show that all the prepared ZnO thin films have a high preferential oriented c-axis orientation with compact hexagonal wurtzite structure. With the increasing annealing temperature (mse.ufl.edu), the intensity of (002) peak, particle size, surface RMS roughness, and absorbance of the ZnO thin films were increased as well. On the contrary, the transmittance and optical band gaps were decreased.     

Effect of K-doping on structural and optical properties of ZnO thin films

In this work, K-doped ZnO thin films were prepared by a sol–gel method on Si(111) and glass substrates. The effect of different K-doping concentrations on structural and optical properties of the ZnO thin films was studied. The results showed that the 1 at.% K-doped ZnO thin film had the best crystallization quality and the strongest ultraviolet emission ability. When the concentration of K was above 1 at.%, the crystallization quality and ultraviolet emission ability dropped. For the K-doped ZnO thin films, there was not only ultraviolet emission, but also a blue emission signal in their photoluminescent spectra. The blue emission might be connected with K impurity or/and the intrinsic defects (Zn interstitial and Zn vacancy) of the ZnO thin films.     

Preparation and characterization of Mg-doped ZnO thin films by sol-gel method

Undoped and Mg-doped ZnO thin films were deposited on Si(1 0 0) and quartz substrates by the sol-gel method. The thin films were annealed at 873 K for 60 min. Microstructure, surface topography and optical properties of the thin films have been measured by X-ray diffraction (XRD), atomic force microscope (AFM), UV-vis spectrophotometer, and fluorophotometer (FL), respectively. The XRD results show that the polycrystalline with hexagonal wurtzite structure are observed for the ZnO thin film with Mg:Zn = 0.0, 0.02, and 0.04, while a secondary phase of MgO is evolved for the thin film with Mg:Zn = 0.08. The ZnO:Mg-2% thin film exhibits high c-axis preferred orientation. AFM studies reveal that rms roughness of the thin films changes from 7.89 nm to 16.9 nm with increasing Mg concentrations. PL spectra show that the UV-violet emission band around 386-402 nm and the blue emission peak about 460 nm are observed. The optical band gap calculated from absorption spectra and the resistivity of the ZnO thin films increase with increasing Mg concentration. In addition, the effects of Mg concentrations on microstructure, surface topography, PL spectra and electrical properties are discussed.     

Effect of preparation conditions on the microstructural characteristics and optical properties of oxidized zinc films

Thin films of zinc (Zn) were deposited onto glass substrates (maintained at room temperature) by thermal evaporation under vacuum. The metallic zinc films were submitted to thermal oxidation in air at 670 K and 770 K, respectively, for 5–90 min, in order to obtain zinc oxide (ZnO) thin films. X-ray diffraction patterns revealed that the ZnO thin films were polycrystalline and had a wurtzite (hexagonal) structure. The morphology of the prepared ZnO thin films was investigated using atomic force microscopy and scanning electron microscopy techniques. Transmission spectra were recorded in the spectral domain from 300 nm to 1400 nm. The optical energy bandgap calculated from the absorption spectra (supposing allowed direct transitions) was in the range 3.05–3.30 eV.     

Determination of Thickness and Optical Constants of ZnO Thin Films Prepared by Filtered Cathode Vacuum Arc Deposition

ZnO thin films are prepared on glass substrates by filtered cathode vacuum arc （FCVA） deposition technique. A new method is demonstrated to extract the refractive index, thickness and optical band gap of ZnO thin films from the transmission spectrum alone. The refractive index is calculated from the extremes of the interference fingers. The transmission spectrum is divided into two terms, non-interference term and interference effect term. The thickness of thin films is calculated by simulating the interference term, and the non-interference term is used to calculate optical band gap with the gained thickness. The results are compared with measurements by using an ellipsometry and a scanning electron microscope.     

氧分压对磁控溅射制备ZnO薄膜的结构及光学特性的影响

采用射频反应磁控溅射法在玻璃衬底上成功制备出具有c轴高择优取向的ZnO薄膜,利用X射线衍射及紫外-可见吸收和透射光谱研究了氧分压变化对ZnO薄膜的微观结构及光吸收特性的影响。结果表明,当工作气压恒定时,用射频反应磁控溅射制备的ZnO薄膜的生长行为主要取决于成膜空间中氧的密度,合适的氧分压能够提高ZnO薄膜的结晶质量;薄膜在可见光区的平均透过率达到90%以上,且随着氧分压的增大,薄膜的光学带隙发生了一定程度的变化。采用量子限域模型对薄膜的光学带隙作了相应的理论计算,计算结果与对样品吸收谱所作的拟合结果符合较好,二者的变化趋势完全一致,表明ZnO纳米晶粒较小时,薄膜光学带隙的变化与量子限域效应有很大关系。     

Synthesis of PS colloidal crystal templates and ordered ZnO porous thin films by dip-drawing method

Polystyrene spheres (PS) were synthesized by an emulsifier-free emulsion polymerization technique and the PS colloidal crystal templates were assembled orderly on clean glass substrates by dip-drawing method from emulsion of PS. Porous ZnO thin films were prepared by filling the ZnO sol into the spaces among the close-packed PS templates and then annealing to remove the PS templates. The effects of ZnO precursor sol concentration and dipping time in sol on the porous structure of the thin films were studied. The results showed an ordered ZnO porous thin film with designed pore size that depended on the sol concentration and PS size could be obtained. And the shrinkage of pore diameter was about 30-43%. X-ray diffraction (XRD) spectra indicated the thin film was wurtzite structure. The transmittance spectrum showed that optical transmittance decreased with the decrease of wavelength, but kept above 80% optical transmittances beyond the wavelength of 550 nm. Optical band gap of the porous ZnO thin film (fired at 500 °C) was 3.22 eV.     

Influence of size effect and sputtering conditions on the crystallinity and optical properties of ZnO thin films

The effects of the thickness variation, substrate type and annealing on the crystallinity parameters, luminescent and optical properties of the zinc oxide (ZnO) thin films were reported. The thin films were deposited on the glass and the amorphous quartz substrates by the standard RF-magnetron sputtering method using ZnO targets in the argon atmosphere. It has been found that the films deposited on the glass substrate manifest a clear size effect. Both the structural and the optical parameters show clearly minima on their thickness dependences. It has been shown that annealing of the comparatively thick ZnO films leads to increase of the crystallite sizes that are followed by a considerable rise of the cathodoluminescence intensity. The corresponding model of the crystallite growth is proposed.