MgxZn1-xO结构性质

采用第一性原理计算模拟了不同组分的Mg_xZn_1-xO半导体混晶的晶格常数、总能、结构,以及禁带宽度的变化。计算结果显示,随着Mg组分的增加,晶格常数逐渐减小,晶体逐渐偏离纤锌矿结构。对各种不同的Mg原子排列情况进行比较认为,Mg_xZn_1-xO的结构随组分x的增大,发生从纤锌矿到岩盐矿的结构相变的可能性高于发生相分离。另一方面,禁带宽度随组分增大主要由价带顶的移动所致。进一步分析Mg原子各种电子态对价带的影响表明,Mg对价带顶附近能带的贡献依次来自p、d、s态电子。随着组分x的增加,p态电子在价带顶附近的密度明显提高,说明sp轨道杂化不但对晶体的几何结构产生影响,而且对其电子结构也起重要作用。     

Mg和Zn掺杂CuAlS2电子结构的分析

从能带结构和态密度分析了黄铜矿CuAlS₂的电子结构.对比未掺杂CuAlS₂,从晶体结构、电子结构、电荷密度分布讨论了Mg和Zn替位Al掺杂对CuAlS₂的影响.结果表明:Mg和Zn掺杂CuAlS₂都导致晶格常数增大,Mg掺杂晶胞体积增大更多;掺杂在价带顶引入受主态,形成p型电导;Mg掺杂比Zn掺杂的受主能级电离能略小;而Zn掺杂CuAlS₂体系总能更低,晶格结构更稳定. 关键词： 2')" href="#">CuAlS₂ p型掺杂 电子结构 能带结构     

3C-SiC材料p型掺杂的第一性原理研究

采用基于第一性原理的密度泛函理论平面波超软赝势法,研究了SiC材料p型掺杂的晶体结构和电子结构性质,得到了优化后体系的结构参数,掺杂形成能,能带结构和电子态密度,计算得到掺杂B,Al,Ga在不同浓度下的禁带宽度.结果表明:随着掺杂B原子浓度的增大,禁带宽度随之减小;而随着掺杂Al,Ga原子浓度的增大,禁带宽度随之增大;在相同浓度下,掺杂Ga的禁带宽度大于掺杂Al,掺Al禁带宽度大于掺B. 关键词： SiC 电子结构 掺杂 第一性原理软件     

Al-N共掺杂3C-SiC介电性质的第一性原理计算

采用基于密度泛函理论的第一性原理平面波超软赝势法,建立了未掺杂,Al,N单掺杂和Al-N共掺杂3C-SiC的4种超晶胞模型,并分别对模型进行了几何结构优化,对比研究了其能带结构,态密度分布和介电常数.计算结果表明:Al掺杂会增大SiC的晶格常数,而N对SiC的晶格影响很小.Al掺杂会导致费米能级进入价带,使3C-SiC成为p型半导体,且带隙宽度略为加宽.N掺杂后的SiC其导带和价带均向低能端发生移动,带隙稍有减小.本征3C-SiC几乎不具备微波介电损耗性能.但是可以通过进行Al掺杂或N掺杂加以改善,Al掺杂后的效果尤为突出.计算发现Al-N共掺杂后的3C-SiC材料在8.2—12.4 GHz范围内其微波介电损耗性能急剧下降,与实验结果相符合,并对这一结果进行了讨论分析.     

GaN及其Ga空位的电子结构

用团簇埋入自洽计算法对宽禁带半导体GaN的电子结构进行了自旋极化的、全电子、全势场的从头计算,得到了与实验值符合的GaN晶体禁带宽度以及价带中N2p带、N2s带和Ga3d带之间的相对位置.在此基础上Ga空位计算(无晶格畸变)显示,Ga空位周围的费米面显著高于正常GaN晶格的费米面.因此Ga空位周围N原子的处于费米面上的2p电子很易被激发成正常晶格处的传导电子 关键词： GaN 电子结构 团簇埋入自洽计算     

Analysis of two-dimensional photonic band gap structure with a rhombus lattice

The relative band gap for a rhombus lattice photonic crystal is studied by plane wave expansion method and high frequency structure simulator (HFSS) simulation. General wave vectors in the first Briliouin zone are derived. The relative band gap as a function of air-filling factor and background material is investigated, respectively, and the nature of photonic band gap for different lattice angles is analyzed by the distribution of electric energy. These results would provide theoretical instruction for designing optical integrated devices using photonic crystal with a rhombus lattice.     

Electronic structure and optical properties of Al and Mg co-doped GaN

The electronic structure and optical properties of Al and Mg co-doped GaN are calculated from first principles using density function theory with the plane-wave ultrasoft pseudopotential method.The results show that the optimal form of p-type GaN is obtained with an appropriate Al:Mg co-doping ratio rather than with only Mg doping.Al doping weakens the interaction between Ga and N,resulting in the Ga 4s states moving to a high energy region and the system band gap widening.The optical properties of the co-doped system are calculated and compared with those of undoped GaN.The dielectric function of the co-doped system is anisotropic in the low energy region.The static refractive index and reflectivity increase,and absorption coefficient decreases.This provides the theoretical foundation for the design and application of Al–Mg co-doped GaN photoelectric materials.     

Mn,N共掺杂对锐钛矿相TiO2微观结构和性能的影响

采用第一性原理平面波超软赝势方法,系统研究了Mn,N共掺杂对锐钛矿相TiO₂的晶体结构、缺陷形成能、电子结构、光学性质以及氧化还原能力的影响.研究表明:Mn,N共掺杂锐钛矿相TiO₂后,TiO₂晶格发生了畸变,导致晶体八面体偶极矩增加,有利于光生电子-空穴对的有效分离;在TiO₂带隙中出现了杂质能级,使锐钛矿相TiO₂的光学吸收带边红移,可见光区的吸收系数明显增大,有利于光催化效率的提高;在不考虑 关键词： 2')" href="#">锐钛矿相TiO₂ 第一性原理 Mn和N共掺杂 光催化性能     

二价金属元素掺杂对LiCoO2体系电子输运性质的影响

为了解释Ca掺杂与Mg掺杂在影响锂离子二次电池正极材料LiCoO₂体系电子输运性质方面的不同效应，采用基于密度泛函理论的第一性原理方法研究了该体系的电子结构.计算结果表明，虽然在LiCoO₂体系中用Ca或Mg替代Co都会在费米能级附近产生部分占据的受主带，但两者对应的电子态都具有明显的局域化特征；此外，与Mg掺杂体系明显不同的是，Ca掺杂体系的受主带与价带之间存在清晰的带隙.这一带隙的存在正是Ca掺杂不能明显提高LiCoO₂体系电导率的主要原因.此外，Ca²⁺与Mg²⁺离子半径的较大差别也是造成这两个掺杂体系的电导率存在明显差异的一个重要因素.     

二维光子晶体禁带特性研究

采用平面波展开法对二维光子晶体分别在E和H极化下的带隙进行了计算. 考虑了填充比、晶格结构、介电常数对最大绝对帯隙的影响. 结果表明,不论是正方晶格还是三角晶格,TM模在介质柱型光子晶体中更容易形成带隙;TE模在空气孔型光子晶体中更容易形成带隙. 填充比一定,最大绝对帯隙宽度并非随着介电常数增大总是增大,而是存在一个峰值. 相对介电常数一定,最大绝对帯隙宽度随填充比的变化也存在一个峰值. 不论空气孔型还是介质柱型结构,三角晶格比正方晶格更容易形成帯隙. 关键词： 平面波展开法 TE模 TM模 最大绝对帯隙     

Electronic structure of BN nanotubes with intrinsic defects NB and BN and isoelectronic substitutional impurities PN, AsN, SbN, InB, GaB, and AlB

The effect of intrinsic defects and isoelectronic substitutional impurities on the electronic structure of boron-nitride (BN) nanotubes is investigated using a linearized augmented cylindrical wave method and the local density functional and muffin-tin approximations for the electron potential. In this method, the electronic spectrum of a system is governed by a free movement of electrons in the interatomic space between cylindrical barriers and by a scattering of electrons from the atomic centers. Nanotubes with extended defects of substitution N_B of a boron atom by a nitrogen atom and, vice versa, nitrogen by boron B_N with one defect per one, two, and three unit cells are considered. It is shown that the presence of such defects significantly affects the band structure of the BN nanotubes. A defect band π(B, N) is formed in the optical gap, which reduces the width of the gap. The presence of impurities also affects the valence band: the widths of s, sp, and p_π bands change and the gap between s and sp bands is partially filled. A partial substitution of the N by P atoms leads to a decrease in the energy gap, to a separation of the Ds(P) band from the high-energy region of the s(B, N) band, as well as to the formation of the impurity Dπ(P) and Dπ*(P) bands, which form the valence-band top and conduction-band bottom in the doped system. The influence of partial substitution of N atoms by the As atom on the electronic structure of BN nanotubes is qualitatively similar to the case of phosphorus, but the optical gap becomes smaller. The optical gap of the BN tubule is virtually closed due to the effect of one Sb atom impurity per translational unit cell, in contrast to the weak indium-induced perturbation of the band structure of the BN nanotube. Introduction of the one In, Ga or Al atom per three unit cells of the (5, 5) BN nanotube results in 0.6 eV increase of the optical gap. The above effects can be detected by optical and photoelectron spectroscopy methods, as well as by measuring electrical properties of the pure and doped BN nanotubes. They can be used to design electronic devices based on BN nanotubes.     

Electronic structure and optical properties of Mg_xZn_(1-x)S bulk crystal using first-principles calculations

We perform the first-principles calculations within the framework of density functional theory to determine the elec- tronic structure and optical properties of MgxZnl-xS bulk crystal. The results indicate that the electronic structure and optical properties of MgxZnl_xS bulk crystal are sensitive to the Mg impurity composition. In particular, the MgxZnl-xS bulk crystal displays a direct band structure and the band gap increases from 2.05 eV to 2.91 eV with Mg dopant compo- sition value x increasing from 0 to 0.024. The S 3p electrons dominate the top of valence band, while the Zn 4s electrons and Zn 3p electrons occupy the bottom of conduction band in MgxZnl_xS bulk crystal. Moreover, the dielectric constant decreases and the optical absorption peak obviously has a blue shift. The calculated results provide important theoretical guidance for the applications of MgxZn1-xS bulk crystal in optical detectors.     

Al_xIn_(1-x)As电子结构和光学性质的第一性原理研究

基于密度泛函理论,对各组分Al_xIn_(1-x)As(x为0～1)的晶体结构,电子结构和光学性质进行了第一性原理计算.结果显示,随Al组分x增加,Al_xIn_(1-x)As晶体各键长将缩短,键角发生变化,晶胞体积也将减小,晶格常数的变化符合Vegard定律.另外,随着Al组分x的增加,Al_xIn_(1-x)As的禁带宽度变宽,且能带有从直接带隙结构转变为间接带隙结构的趋势.具有较高In组分的Al_xIn_(1-x)As晶体在可见光区域中的光吸收能力更强,光谱响应范围更大.     

He原子掺杂铝材料的第一性原理研究

采用基于第一性原理的平面波超软赝势方法,结合广义梯度近似(GGA),计算了铝及铝晶胞间隙位置掺入He原子后体系的几何结构、电子结构、总体能量和电荷布居值.计算结果表明:随着氦在金属铝中逐渐形成,铝晶胞体系会发生晶格畸变,但总的趋势是He在铝体系的八面体位置的晶格畸变小于其在四面体位置的晶格畸变.He在铝晶胞八面体和四面体间隙的杂质形成能分别为1.3367 eV和2.4411 eV.由此可知,He在铝晶胞中最稳定位置是八面体间隙位置.同时,文中还从原子尺度层面分析了He原子在铝晶胞中的占位及其键合性质,讨论 关键词： 铝材料 第一性原理 形成能     

H,O,N,He原子掺杂Al原子的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波赝势方法,对Al中分别加入H,O,N和He原子后的晶体状态进行了研究.通过晶体结构和形成能分析比较了杂质原子占据不同位置的难易程度及对晶体稳定性的影响,并从态密度、电荷密度和电荷布居的角度,分析了其电子结构.结果表明:H、O和N原子占据金属Al的四面体间隙最稳定,而He原子主要占据金属Al的八面体间隙. O和N原子与Al原子具有强烈的共价作用,H原子与Al原子存在共价作用但相对较弱,而He原子与Al原子的相互作用以范德华力为主.进一步揭示了四种原子在金属Al中不同行为的电子机制.     

A theoretical study of band structure properties for III–V nitrides quantum wells

Reliable and precise knowledge about the strain and composition effects on the band structure properties is crucial for the optimization of InGaN based heterostructures for electronic and optoelectronic device applications. AlInGaN as quaternary barrier material permits to control the band gap and the lattice constant independently. Using the model solid theory and the multi-band k.p interaction model, we investigate the composition effects on band offsets and band structure for pseudomorphic Ga_1−xIn_xN/Al_zIn_yGa_1−y−zN (0 0 1) heterointerfaces having zinc-blende structure. The results show that both conduction and valence band states are strongly modified while varying In and Al contents in the well and barrier materials. Furthermore, it is found that using AlInGaN as the barrier material allows the design of heterostructures including InGaN wells with tensile, zero or compressive strain. Such results give new insights for III-nitride compounds based applications and especially may guide the design of white-light emission diodes.     

The impact of Mg content on the structural,electrical and optical properties of MgZnO alloys: A first principles study

The structural, electronic and optical properties of wurtzite MgZnO with Mg concentration ranging from 0 to 0.5 are studied using the first principle calculations. It's found that the lattice constants c and specific volume V of the MgZnO alloys decrease and their band gap widens as Mg concentration increases, which are in agreement with our experimental results. A particular Mg concentration is found to exist at around 0.375, equals to which the corresponding MgZnO alloy has the minimum width of the top valence band. This indicates that Mg concentration may be used to tune the electronic properties of MgZnO alloy. Meanwhile, it's also found that the energy response range of the optical spectrums decreases with the increase of Mg concentration. There are different energy shifts toward high energy (blue shift) of the peaks in the optical spectrums with the increase of Mg concentration, which are explained by the variations of the density of states in details. So the electronic and optical properties of MgZnO may be tuned through Mg concentration, and our research results may provide meaningful references to the development and design of photoelectric devices.     

DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

Electronic and structural properties of ZnxCd1−xSySe1−y alloys lattice matched to GaAs and InP: An EPM study

The electronic, optical and structural properties of Zn_xCd_1−xS_ySe_1−y quaternary alloys lattice matched to GaAs and InP are studied. The electronic band structure and density of states are computed using empirical pseudopotential method. The disorder effects are included via modified virtual crystal approximation. The bandgap computed from band structures are utilized to evaluate refractive indices, dielectric constants and ionicity factors for the alloys. Among structural properties elastic constants and bulk moduli are computed by combining the EPM with Harrison bond orbital model. All possible semiconductors from the ZnCdSSe system are found to have direct bandgap. The lattice matched alloys have larger band gap and more ionic character than the lattice matched compounds.     

ReSi1.75电子结构的第一性原理研究

基于第一性原理全势线性缀加平面波方法和局域密度近似(LDA)，对ReSi_1.75的基态晶格属性进行了研究. 结构优化的结果表明，ReSi_1.75的基态平衡晶格常数比实验值小约0.6%. 在LDA计算基础上，考虑局域的Re的d电子库仑作用，用LDA+U方法计算了ReSi_1.75的电子结构，发现当U_eff=U-J=4.4eV时，能带结构呈半导体性质. 具有0.12eV 关键词： 1.75')" href="#">ReSi_1.75 局域密度近似 自相互修正作用 电子结构