热键合技术的Cr4+:YAG被动调Q激光器理论和实验研究

 采用数值求解被动调Q速率方程，并讨论了基于热键合技术被动调Q激光器的优化方法。通过数值仿真讨论分析了谐振腔的损耗、饱和吸收体的初始透过率、输出镜的反射率和泵浦功率等参数对激光输出的影响。结果表明：输出镜存在最佳透过率，使得输出功率最高和脉冲能量最大；减小饱和吸收体的初始透过率能有效提高脉冲能量，并压缩脉宽，但是会增加阈值泵浦功率；泵浦功率与脉冲重复率和输出功率近似成线性增加，增大泵浦功率可以压缩脉宽。并通过实验验证了理论分析的正确性。     

Cr4+：YAG被动调Q激光器中受激粒子上转换效应对脉冲的影响研究

分析和报道了受激粒子能量上转换(ETU)效应对Cr:YAG 被动调Q Nd:YAG/Nd:YVO₄激光器的输出脉冲影响研究.结合ETU理论分析和被动调Q速率方程组，得到了初始反转粒子密度，末态反转粒子密度和光强最大时反转粒子密度的比值变化对激光输出脉冲宽度和脉冲能量的影响，和实验结果相一致.同时讨论了降低ETU效应的方法，有助于这类被动调Q激光器的优化设计. 关键词： 受激粒子能量上转换 Cr:YAG饱和吸收体 被动调Q     

饱和吸收休调Q的反转粒子数条件

本文从描述饱和吸收体调Ｑ的速率方程出发，推导实现有激发态吸收的饱和吸收体调Ｑ所需的反围粒子数理论上应满足的条件，并对其进行讨论分析。     

饱和吸收体调Q的反转粒子数条件

本文从描述饱和吸收体调Ｑ的速率方程出发，推导实现有激发态吸收的饱和吸收体调Ｑ所需的反转粒子数理论上应满足的条件，并对其进行讨论与分析。     

热键合技术的Cr4+:YAG被动调Q激光器理论和实验研究

采用数值求解被动调Q速率方程,并讨论了基于热键合技术被动调Q激光器的优化方法。通过数值仿真讨论分析了谐振腔的损耗、饱和吸收体的初始透过率、输出镜的反射率和泵浦功率等参数对激光输出的影响。结果表明：输出镜存在最佳透过率,使得输出功率最高和脉冲能量最大;减小饱和吸收体的初始透过率能有效提高脉冲能量,并压缩脉宽,但是会增加阈值泵浦功率;泵浦功率与脉冲重复率和输出功率近似成线性增加,增大泵浦功率可以压缩脉宽。并通过实验验证了理论分析的正确性。     

Cr^4＋：YAG的可饱和吸收特性与被动Q开关性能研究

运用速率方程计算了Ｃｒ＾４＋：ＹＡＧ晶体的可饱和吸收特性参数，包括初始吸收系数，饱和吸收系数，饱和光强和损耗调制度，用Ｃｒ＾４＋：ＹＡＧ对脉冲和连续Ｎｄ：ＹＡＧ激光器进行了被动调Ｑ，在脉冲Ｎｄ：ＹＡＧ激光器上得到了８ｎｓ的调Ｑ激光脉冲，在连续Ｎｄ：ＹＡＧ激光器的调Ｑ中得到了间隔和幅度抖动小于５％的输出脉冲充列。     

低温生长GaAs在Nd∶YVO4激光器中调Q特性的研究

采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜，实现了半导体抽运Nd∶YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2 W时，获得的最短脉冲半峰全宽为15 ns，最大单脉冲能量为4.84 μJ，最高峰值功率为330 W，最大平均输出功率为1.16 W；脉冲重复频率在220 kHz到360 kHz之间.     

新型Nd^3＋：Ca4GdO（BO3）3自倍频晶体Cr^4＋：YAG被动调Q激光特性研究

采用氙灯抽运自倍频晶体Nd^3 :Ga4GdO(BO3）3（简称Nd:GdCOB)，Cr^4 :YAG被动调Q，实现了Nd:GdCOB晶体被动调Q激光运转，测量了饱和吸收体Cr^4 :YAG不同小信号透过率小绿激光单脉冲的输出能量、脉冲宽度、重复率，给出了描述Nd:GdCOB晶体调Q工作原理的耦合波方程组，数值求解了该方程组，所得的理论结果与实验值相符合。     

全光纤化2.8μm中红外被动调Q激光器数值分析

提出了一种实现全光纤中红外激光器脉冲运转的方法。利用氟化物玻璃中镝离子(Dy³⁺)的2.8μm波段的吸收截面与铒离子(Er³⁺)发射截面重合的特性,将掺镝氟化物光纤作为中红外波段的可饱和吸收体,实现2.8μm掺铒氟化物光纤激光器全光纤结构的被动调Q脉冲运转;通过在可饱和吸收体两端引入中心波长为3.1μm的光纤光栅,解决Dy³⁺上能级寿命较长所导致的高泵浦功率下Dy³⁺吸收饱和、进而导致被动调Q失效的问题。基于该结构建立了2.8μm被动调Q掺铒光纤激光器的速率方程模型,计算了可饱和吸收体的参数及其两端的谐振腔反馈条件对2.8μm激光器的脉冲运转功率和时间特性的影响。计算结果表明,通过在可饱和吸收体两端引入光纤光栅可以加快可饱和吸收体的恢复过程,使激光器能够在高泵浦功率下保持调Q脉冲运转。     

Cr^4＋：YAG在对撞脉冲锁模的Nd：YAG激光器中实现被动锁模的研究

在理论上提出了Ｃｒ＾４＋：ＹＡＧ作为可饱和吸收体在Ｎｄ：ＹＡＧ激光器中实现被动锁模的可能性，运用速率方程组导出在强激光脉冲作用下Ｃｒ＾４＋：ＹＡＧ激发态吸收的恢复时间和饱和光强。实验上在带有抗共振环结构的接近于介稳腔的脉冲式Ｎｄ：ＹＡＧ激光器中用Ｃｒ＾４＋：ＹＡＧ作为可饱和吸收体实现被动锁模运转，得到能量１３．５ｍＪ、平均脉宽１８０ｐｓ的锁模脉冲序列。     

GaAs被动调Q兼输出耦合Nd∶YVO4激光特性研究

利用可饱和吸收半导体GaAs作为被动调Q元件和FP输出耦合镜,实现了半导体激光器(LD)抽运Nd:YVO4激光调Q运转,获得脉宽度为47ns,重复频率为1183kHz,平均功率为430mW,光束质量为M2=113的TEM00激光基横模输出,调Q抽运阈值为1700mW.并数值求解了含有GaAs被动调Q兼输出耦合的速率方程,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系,理论与实验结果相一致.为多功能综合型微型调Q固体激光器提供了简单有效的方法. 关键词： 被动调Q 输出耦合 GaAs     

Cr(2+):ZnSe and Co(2+):ZnSe saturable-absorber Q switches for 1.54-mum Er:glass lasers

Passive Q switching of Er:glass lasers has been demonstrated with Cr(2+):ZnSe and Co(2+):ZnSe saturable absorbers. A pulse duration of ~50ns and an output pulse energy of 5 mJ were obtained with both Co:ZnSe and Cr:ZnSe passive shutters. A Q-switched conversion efficiency of as much as 26% was obtained for Cr:ZnSe. Theoretical modeling exhibits satisfactory agreement with experimental data.     

GaAs被动调Q Nd:YAG激光器激光特性的研究

报道了用半导体材料 Ga As实现氙灯抽运 Nd:YAG激光器的被动调 Q运转 ,测量了激光器的阈值、脉冲宽度和输出能量。从 Ga As的能级结构出发 ,理论上研究了 Ga As材料的饱和吸收原理 ,建立了调 Q激光器速率方程并给出了数值解 ,对理论结果与实验结果进行了比较和讨论。     

Co2+:LMA crystal as saturable absorber for a diode-pumped passively Q-switched Nd:YVO4 laser at 1342 nm

We have demonstrated an efficient diode-pumped passively Q-switched Nd:YVO₄ laser at 1342 nm by using an uncoated Co²⁺:LaMgAl₁₁O₁₉ (Co²⁺:LMA) crystal as the saturable absorber. With the absorbed pump power of 11.7 W, the pulse width could be as low as 42 ns, with a corresponding average output power of 580 mW. At around 40 kHz repetition rate, the energy of a single Q-switched pulse was estimated to be about 14.5 μJ and the peak power was 346 W. The passive Q switching operation for the Co²⁺:LMA in different polarization states was also investigated. PACS 42.55.-f; 42.55.Xi; 42.60.Gd; 42.70.Mp     

Laser-diode-pumped Passively Q-switched Nd:Sr5(VO4)3F Laser with Cr4+: YAG Saturable Absorber

Cr4+:YAG is a new saturable absorber for passive Q-switching. As a passive Q-switcher, it has several excellent properties, such as low saturation fluence, high damage threshold, good thermal conductivity, no degradation and so on. By using a laser-diode as pumping source and Cr4+ :YAG as passive Q switcher, the passive Q-switching run in Nd: Sr5(VO4)3F laser at 1. 065 μm is realized. The average output power, the single pulse energy, the pulse width and the repetition rate for different small-signal transmission of Cr4+:YAG and different pumping power were measured. Meanwhile, the coupling rate equations for Cr4+:YAG as passive Q-switcher were given and the experimental results agreed with the numerical solution of equations.     

Laser-diode-pumped Passively Q-switched Nd:Sr5(VO4)3F Laser with Cr4+:YAG Saturable Absorber

Cr4+:YAG is a new saturable absorber for passive Q-switching. As a passive Q-switcher, it has several excellent properties, such as low saturation fluence, high damage threshold, good thermal conductivity, no degradation and so on. By using a laser-diode as pumping source and Cr4+ :YAG as passive Q switcher, the passive Q-switching run in Nd: Sr5(VO4)3F laser at 1. 065 μm is realized. The average output power, the single pulse energy, the pulse width and the repetition rate for different small-signal transmission of Cr4+:YAG and different pumping power were measured. Meanwhile, the coupling rate equations for Cr4+:YAG as passive Q-switcher were given and the experimental results agreed with the numerical solution of equations.     

InAs/GaAs quantum-dot saturable absorbers for diode-pumped passively Q-switched Nd-doped 1.3-microm lasers

A low-loss semiconductor saturable absorber based on InAs/GaAs quantum dots was developed for Q switching of a diode-pumped Nd-doped laser operating at 1.3 microm. With an InAs/GaAs quantum-dot saturable absorber, a diode-pumped Nd:YVO4 laser at 1342 nm was achieved. With an incident pump power of 2.2 W, an average output power of 360 mW with a Q-switched pulse width of 90 ns at a pulse repetition rate of 770 kHz was obtained.     

氙灯泵浦新型晶体Nd：S—VAP调Q激光器腔内倍频研究

采用氙灯泵浦晶体Ｎｄ：Ｓ－ＶＡＰ，ＫＴＰ晶体腔内倍频，实现了Ｎｄ：Ｓ－ＶＡＰ晶体０．５３２５μｍ绿光激光ＢＤＮ染料片调Ｑ运转，测量了输出绿光激光的特性及不同腔长和染料片小信号透过率情况下的输出能量及脉冲宽度，给出染料片调Ｑ腔内倍频的耦合波方程组，数值求解方程组，所得的理论数据与实验结果很好地相符。     

自调Q自锁模固体激光器

利用被动锁模激光器的锁模原理,结合自锁模固体激光器中等效快可饱和吸收体的特性,讨论了控制运转状态的自锁模动力学方程和速率方程,给出了自调Q自锁模的条件,以及自调Q周期与激光器结构和运转参数的关系,所得结论与实验结果有很好的一致性。     

灯泵钛宝石激光器调Q运转

论述了色散棱镜谐振腔调Q运转方法。其中棱镜既起到波长调谐色散元件的作用 ,又起到Q开关起偏器的作用 ,省掉了制作难度大的宽带起偏器。为了使晶体高压随波长调谐同步运转 ,采用了单片机控制全反射镜驱动电源 ,同时也控制调Q电压 ,使全反射镜的转动与施加在晶体上的高压同步运行 ,达到了宽带调谐与调Q电压同步运转的目的 ,获得了波长调谐巨脉冲激光。实验中应用精确数字退压延迟技术和晶压与波长调谐同步运转方法 ,获得了激光脉宽 31ns、能量 2 70mJ的结果