描述蠕变过程中内耗的四参量模型

实验表明:蠕变过程中的内耗兼有Maxwell二参量模型的性质和滞弹性三参量模型的性质。 本文提出一个用以描述蠕变过程中内耗的四参量模型。由此模型推导出的内耗表达式为 Q~(-1)=1/(ωτ_1) △(ωτ_2)/(1 ω~2τ_2~2),式中ω为测量圆频率,τ_1和τ_2分别为粘弹性内耗和滞弹性内耗的弛豫时间,△为弛豫强度。 这个内耗表达式可以满意地说明蠕变过程中内耗随时间的变化,以及内耗对蠕变速率、实验温度和测量频率的依赖关系。 文中还从微观上分析了四参量模型中各元件的物理本质。     

无扩散相变中界面动力学的唯象理论及其应用

固态相变中相界面或畴界面的平均运动速度V与有效相变驱动力△G＇(相变驱动力△G与相界面运动阻力△G_R之差)之间的关系可表示为V=φ(△G—△G_R)。当有单向变化的外场(场强为ξ,变化速率为ξ)作用于相变系统并能诱导相界面运动时,就会产生母相/新相间的转变。在相变过程中同时叠加一个交变应力时,则可计算得界面动力学关系V=φ(△G—△G_R)与相变过程内耗Q^-1、相关的模量亏损(△M/M)、相变速率dF/dξ、相变应变ε₀间的关系为 [d lnφ(△G-△G_R)/d(△G-△G_R)]= Q^-1ω/n²M(dF/dξ)ξ = (△M/M)ω/nMε₀(dF/dξ)ξ, 以及 (△M/M)/Q^-1=ε₀/n。此处ω为交变应力的圆频率,M为与振动模式有关的弹性模量,n为应力与界面运动的耦合因子。因此,界面动力学关系式的通解为 V = ∑(±n)/(α≠-1) A_α exp{[(△G-△G_R)/△G_α^*]^{α+ 1}/(α+ 1)} +∑(m)/(β₀) A_β[(△G-△G_R)/△G_β^*]^β 此处n,m为正整数。上式中的各项参数可由实验数据确定。此外,(△M/M)/Q^-1的等式还可用于判别相变过程的模量亏损中有无声子模软化的贡献。 关键词：     

NiTi合金中应力诱导的I/C相变及其界面动力学的研究

在改装了的拉力试验机上,以不同的拉伸速率ε(0.79—18×10^-5s^-1)进行加、卸载试验,并用中间扭摆和四端电位法同时测量了Ni-49at％Ti合金丝在应力诱导I/C相变过程的内耗Q^-1、模量M/M₀、电阻率ρ/ρ₀和应力-应变曲线。研究了应力循环和应变速率的影响。在Q^-1-ε曲线上出现Q^-1峰,而在f²-ε曲线上出现与之相对应的模量极小。内耗峰的高度Q_p^-1和模量亏损值均随ε增大而增大。根据界面动力学模型和内耗的实验数据,计算得应力诱导I/C相变过程界面的动力学关系为V=V^*(△G—△G_R)^m,V^*和m为动力学参数,△G_R为相变过程中运动相界面所受的阻力,计算得△G_R≈1cal/mol。讨论了内耗和模量亏损、软模效应之间的关系。 关键词：     

拍波激光加速器中的频率匹配

本文从广义协变的运动方程和麦克斯韦方程出发,导出了电子等离子体波各量的解析表达式。指出△ω=2ω_p的等离子体波是完全简谐的。完全共振的条件由△ω=2ω_(p0)[1+(e²(A₂⁽⁽¹⁾²⁾+(A₂^((2)2))/(2m²c⁴)+(3e²A₂⁽¹⁾A₂⁽²⁾)/(m²c⁴)]^-1/2 给出。 关键词：     

NiTi合金相变过程中界面动力学的内耗研究

本文采用同时测量内耗、模量及电阻的方法,对NiTi合金变温过程中所发生的正、反马氏体相变及可逆I/C相变进行了系统的研究。结果表明,变温马氏体相变及I/C相变过程中内耗均为粘弹性型内耗,是相界面在克服粘滞性阻力而运动时引起的。从界面动力学出发,研究了相变过程中界面的运动动力学行为。由实验数据求得了马氏体相变过程中界面动力学关系的具体表达式为:V=V^*exp(—△G^*/△G—△G_R);相变过程内耗表达式为:Q^-1=(n²)/2·(μ△G^*)/((△G—△G_R)²)·(dF)/(dT)·T/ω;相变阻力△G_R约为10cal/mol的数量级。讨论了相变过程中的“软模”效应。马氏体相变过程中的模量“软化”来自声子模的软化和界面运动引起的附加模量亏损两个方面。 关键词：     

阈值附近撕裂模的非线性行为

电阻率型m≥2的撕裂模在线性不稳定性阈值附近的非线性演化方程可以表示为 ?-Q²A+K²/2A²à-Q²(δ△_1e)/(△_1e)A³=0。这里A为模的幅值,Q为线性增长率,K为模的波矢,△_e为线性模匹配计算中的外区解的对数微分差,δ△_1e为非线性效应对于对数微分差的贡献。本文除在拟线性近似下推导出该方程外,还仔细讨论了该模的非线性行为。在对称电流分布sheet pinch模型的特例下,可以证明δ△_1e=0,不存在新的平衡点。 关键词：     

NCO异构体结构与分析势能函数

在B3LYP/6-31+G（d）水平上,对NCO分子的各种可能结构进行几何优化,得到了NCO及其异构体分子CNO和CON基态结构都是C_∞v,电子态为X²Ⅱ,NCO分子的平衡核间距R_NC=0.1230 nm,R_CO=0.1186 nm,离解能D_e=13.40 eV,并计算出谐振频率ω₁=1293.44 cm^-1,ω₂（A′）=484.73 cm^-1,ω₂（A″）=559.72 cm^-1,ω₃=1988.41 cm^-1,Renner-Teller参数ε=-0.1429,计算值与实验值吻合较好.在此基础上,应用多体项展式理论,单体项中首次引入开关函数,三体项以NCO,CNO基态结构与性质为依据,拟合给出了NCO分子的基态分析势能函数,其等值势能图准确再现了NCO,CNO分子基态结构与特征,并与优化结果完全一致.     

钠米材料Fe2O3微结构的正电子寿命谱学研究

用Ｘ射线衍射确定了纳米材料Fe₂O₃的平均粒径。测量了正电子的寿命。给出了平均粒径随退火温度的变化和短寿命成分τ₁、中等寿命成分τ₂以及它们的强度比Ｉ₂／Ｉ₁随平均粒径的变化。讨论了纳米材料Fe₂O₃的界面结构、平均正电子寿命τ与多普勒展宽谱Ｓ参效间的对应关系。 关键词：     

激光等离子体中3/2ω0谐波的实验观测

测量了激光产生的等离子体中3/2ω₀谐波的发射。结果表明,在靶面功率密度为10¹⁴W/cm²量级的情况下,3/2ω₀谐波发生蓝移,蓝移量约为70?。谐波本身加宽量为26?,随靶面功率密度增加,加宽量亦略有增大。 关键词：     

关于一级近似Tc级数解的收敛问题

本文通过一个实例说明:μ^*=0时,一级近似T_c级数解的收敛半径既不是由z_ph=-∫₀^(ω_ph)dωg(ω)dω·ω²/(ω_ph²-ω²),也不是由z_ph=∫₀^(ω_ph)dωg(ω)dω·ω^{2< 关键词：}     

低频内耗测量时标准滞弹性固体的内耗行为

用三参量力学模型的恒应力和恒应变弛豫时间描述了标准滞弹性固体的内耗行为.在低频内耗测量时,振动系统的惯量不可避免地影响测量的内耗值,当材料的内耗较大和测量频率与振动系统的共振频率可以比较时,惯量对内耗测量的影响较大,这时惯量的影响不可忽略. 关键词：     

Optical properties of Nb3Sn: A probe of the electronic density of states

An expression for the conductivity of an impure metal is derived in a simple manner in terms of a frequency dependent relaxation time τ. This method involves perturbation theory and an (ωτ)^?1 expansion but is shown to agree with a rigorous treatment. The infrared absorptivity of the A-15 material Nb₃Sn is calculated and it is found that optical properties will give direct information about the electronic density of states.     

Relaxation processes in glasses of the Ge-As-S system

The internal friction in Ge _x As_{40 ? x} S₆₀ glasses is investigated in the temperature range 100 K-T _g at infralow frequencies (10^?3?10^?1 Hz). It is shown that the concentration dependence of the internal friction of these materials changes as a result of the transformation of the dominant kinetic unit in dissipative processes of the relaxation and nonrelaxation types. It is established tha the change in the mechanism of internal friction in the Ge _x As_{40 ? x} S₆₀ glasses leads to a jump in the activation energy of the α relaxation and to a local minimum in the frequency factor τ₀.     

Conductivity of Wigner liquid

The conductivity of two-dimensional electron systems with low carrier concentration is considered on the basis of the previously suggested model (Fermi liquid with a soft mode) under the assumption that the equilibrium in each of the (fermion and boson) subsystems is established faster than the impurity relaxation and the relaxation between the subsystems (hydrodynamic approximation). The conductivity of the system depends on three characteristic times: τ₁(τ₂) is determined by the fermion (boson) impurity scattering and τ₁₂ is determined by the friction between the subsystems; the respective temperature dependences are obtained. The conductivity is related to the relaxation time τ in the usual way, and τ obeys the relationship τ^?1=τ ₁ ^?1 +(τ₂+τ₁₂)^?1. It follows from the results obtained that the resistivity of pure samples should increase with temperature and tend towards saturation.     

Theory of the Gorsky effect for low interstitial concentrations

The formalism of the preceding paper is applied to work out the theory of the Gorsky effect, or anelastic relaxation due to the long-range diffusion of interstitials in a host lattice, for non-interacting (low-concentration) interstitials (e.g., H in Nb). It is shown how linear response theory (LRT) provides a number of advantages that simplify the solution of the problem and permit the handling of complications due to specimen geometry and stress inhomogeneity. The multiple-relaxation time creep function of Alefeldet al is first re-derived. Next, the dynamic responseand the short-time behaviour of the creep function are deduced exactly, and theω ^−1/2 fall-off of the internal friction at high frequencies is exhibited. Finally, it is pointed out that the true asymptotic behaviour of the dynamic response must be found by going beyond the diffusion equation model. A two-state random walk analysis is used to predict a cross-over to a trueω ⁻¹ asymptotic behaviour, and the physical reasons for this phenomenon are elucidated.     

单晶和多晶纯铝蠕变过程中的内耗

研究了单晶和多晶纯铝蠕变过程中的低频内耗。在单晶纯铝中观察到:内耗在蠕变初期单调下降,在蠕变第一阶段后期出现了一个显著的时间内耗峰,在蠕变第二阶段内耗趋于稳定值。多晶纯铝在类似实验条件下则不出现时间内耗峰。文中分析了出现时间内耗峰的条件和原因,认为它是由于蠕变第一阶段中运动位错的阻尼系数逐渐增大所引起的。文中还从蠕变过程中位错运动的微观机制出发,推导出了蠕变过程中内耗的表达式,满意地解释了实验结果。 关键词：     

Dielectric relaxation in YTTRIA-doped Ceria solid solutions

The nature of the defects present in Y₂O₃-doped CeO₂ is explored by means of dielectric relaxation, employing primarily the thermally-stimulated depolarization current (TSDC) technique. For Y₂O₃ concentrations ? 1 mole %, two relaxation peaks are observed. The lower-temperature peak shows a dielectric relaxation rate, τ^?1 which is $\text{1}\text{2}$ the relaxation rate of the corresponding anelastic relaxation. This proves that the peak is due to nn, 〈111〉 oriented, (YV_O) pairs, where V_O represents the oxygen vacancy. These pairs are positively charged defects which are compensated by an equal number of isolated Ý. The upper peak is a broad peak whose position varies with Y₂O₃ concentration in the same manner as the activation enthalpy for the ionic conductivity. The peak is not due to simple dipoles, but to relaxation of the array of alternately charged (YV_O) and Ý defects by the redistribution of oxygen-ion vacancies. A simple model, in which these defects form a superlattice containing wrong pairs, explains the essential features of the upper peak.