Fluorescence spectroscopy of kerosene vapour at high temperatures and pressures: potential for gas turbines measurements

Laser-induced fluorescence spectroscopy of kerosene vapour was performed in a heated test cell operating between 450 and 900 K, at pressure from 0.1 to 3.0 MPa, for oxygen molar fraction between 0 and 21 %, with different laser excitation wavelengths (248, 266, 282 and 308 nm). Results show that, depending on the laser excitation scheme, kerosene fluorescence spectrum exhibits one or two fluorescence bands in the UV–visible range (attributed to aromatics naturally present in kerosene fuel). Fluorescence intensity of these bands decreases with increasing temperature, pressure and oxygen molar fraction. Different imaging strategies were derived from spectroscopic findings to simultaneously measure temperature and equivalence ratio fields in kerosene/air sprays, or flame structure and fuel spatial distribution in kerosene/air aeronautical combustors, by means of planar laser-induced fluorescence on kerosene vapour (K-PLIF).     

Toluene laser-induced fluorescence for in-cylinder temperature imaging in internal combustion engines

A single-laser single-camera imaging technique was demonstrated for in-cylinder temperature distribution measurements in a direct-injection internal combustion engine. The single excitation wavelength two-color detection technique is based on toluene laser-induced fluorescence (LIF). Toluene-LIF emission spectra show a red-shift with increasing temperature. Temperature can thus be determined from the ratio of the signal measured in two separate wavelength ranges independent of the local tracer concentration, laser pulse energy, and the intensity distribution. An image doubling and filtering system is used for the simultaneous imaging of two wavelength ranges of toluene LIF onto the chip of a single camera upon excitation at 248 nm. The measurements were performed in a spark-ignition engine with homogeneous charge and yielded temperature images with a single-shot precision of approximately ±?6%.     

Characterization of a laser-plasma extreme-ultraviolet source using a rotating cryogenic Xe target

A laser-plasma source for extreme-ultraviolet (EUV) light that uses a rotating cryogenic solid-state Xe target has been characterized. We focused on parameters at the wavelength of 13.5 nm with 2% bandwidth required for an EUV lithography source and investigated improvements of the conversion efficiency (CE). With the drum rotating, there was an increase in CE and less fast ions compared with the case for the drum at rest. It is considered that the Xe gas on the target surface can produce optimal-scale plasma, and satellite emission lines in Xe plasma effectively increase the EUV intensity, and the ion number is decreased by the gas curtain effect. The dependence of CE on the laser wavelength, laser energy and intensity also studied. As a result, the maximum CE was 0.9% at 13.5 nm with 2% bandwidth under the optimal condition. By continuous irradiation of a Nd:YAG slab laser at a repetition rate of 320 Hz and an average power of 110 W, the target continuously generated EUV light with an average power of 1 W at 13.5 nm with 2% bandwidth. The achieved performances provide valuable information for the design of a future EUV lithography source.     

Effects of ions clustering in Nd3+/Al3+-codoped double-clad fiber laser operating near 930 nm

We report experimental and theoretical investigations on the presence and the detrimental effect of neodymium clusters on the three-level transition at near 930 nm in aluminosilicate double-clad fibers. A series of fibers with a W-type refractive index core profile to filter out the competing strong transition at 1060 nm were fabricated to study the impact of clusters on laser efficiency at near 930 nm using different core compositions. Percentage of clustered Nd ions have been evaluated using two methods based either on the saturation of the pump absorption or on laser efficiencies. Laser characterizations and numerical modeling have shown that clustering effect has a strong impact on the laser efficiency at 930 nm and fractions of clustered ions higher than 50% have been found in the most doped fiber.     

Frequency shifting of sub-100 fs laser pulses by stimulated Raman scattering in a capillary filled with pressurized gas

The technique of Raman conversion of sub-100 fs laser pulses based on excitation of active medium by two orthogonally polarized pulses has been developed for Raman lasers with a glass capillary. 52 fs Stokes pulse at the wavelength of 1200 nm has been generated by stimulated Raman scattering of 48 fs Ti:sapphire laser pulse at the wavelength of 800 nm in hydrogen. 13% energy conversion efficiency has been achieved at pulse repetition rate up to 2 kHz.     

Characterization of ammonia two-photon laser-induced fluorescence for gas-phase diagnostics

Two-photon laser-induced fluorescence (LIF) of ammonia (NH₃) with excitation of the C′-X transition at 304.8 nm and fluorescence detection in the 565 nm C′-A band has been investigated, targeting combustion diagnostics. The impact of laser irradiance, temperature, and pressure has been studied, and simulation of NH₃-spectra, fitted to experimental data, facilitated interpretation of the results. The LIF-signal showed quadratic dependence on laser irradiance up to 2 GW/cm². Stimulated emission, resulting in loss of excited molecules, is induced above 10 GW/cm², i.e., above irradiances attainable for LIF imaging. Maximum LIF-signal was obtained for excitation at the 304.8 nm bandhead; however, lower temperature sensitivity over the range 400–700 K can be obtained probing lines around 304.9 nm. A decrease in fluorescence signal was observed with pressure up to 5 bar absolute and attributed to collisional quenching. A detection limit of 800 ppm, at signal-to-noise ratio 1.5, was identified for single-shot LIF imaging over an area of centimeter scale, whereas for single-point measurements, the technique shows potential for sub-ppm detection. Moreover, high-quality NH₃-imaging has been achieved in laminar and turbulent premixed flames. Altogether, two-photon fluorescence provides a useful tool for imaging NH₃-detection in combustion diagnostics.     

A pump power controlled 1,060 nm multiwavelength fiber ring laser using nonlinear polarization rotation of SOA

We propose and experimentally demonstrate a both channel spacing and wavelength-tunable 1,060 nm multiwavelength fiber laser using nonlinear polarization rotation of semiconductor optical amplifier (SOA). The SOA in the cavity can not only provide the gain but also generate a pump power controlled phase-shift between two orthogonal linear states of polarization. The experimental result shows that the fast and continuous wavelength tuning is achieved with external light injection, while the channel spacing of the multiwavelength laser can be varied by adjusting the length of polarization maintaining fiber. When an external laser source with 13 dBm power is injected into the SOA as a control pump, optically tunable operation of up to 20 wavelength channels, from 1,042 to 1,058 nm, with a wavelength spacing of 0.8 nm has been demonstrated with the signal-to-spontaneous-noise ratio over 40 dB at room temperature. The lasers are stable with a maximum power fluctuation per channel of less than 0.5 dB during 2-h test.     

Axial strain and temperature sensing characteristics of the single–coreless–single mode fiber structure-based fiber ring laser

This paper experimentally demonstrated a singlemode–coreless–singlemode (SCS) fiber structure-based fiber ring cavity laser for strain and temperature measurement. The basis of the sensing system is the multimodal interference occurs in coreless fiber, and the transmission spectrum is sensitive to the ambient perturbation. In this sensing system, the SCS fiber structure not only acts as the sensing head of the sensor but also the band-pass filter of the ring laser. Blue shift with strain sensitivity of \(\sim\) ?2 pm/με ranging from 0 to 730 με and red shift with temperature sensitivity of \(\sim\) 11 pm/°C ranging from 5 to 75 °C have been achieved. Experimental results also show the proposal has great potential in using long-distance operation. The fiber ring laser sensing system has a optical signal to noise ratio (OSNR) more than 50 and 3 dB bandwidth less than 0.05 nm. The result shows that the coreless fiber has no improvement of the temperature and axial strain sensitivity. However, compared to the common singlemode–multimode–singlemode fiber structure sensors, the laser sensing system has the additional advantages of high OSNR, high intensity and narrow 3 dB bandwidth, and thus improves the accuracy.     

Silver nanoparticles produced by PLD in vacuum: role of the laser wavelength used

In this work we report the results of investigation of silver (Ag) nanoparticles prepared on a silica substrate by laser ablation. Our attention was focused on the mean diameter, size distribution and optical absorption properties of nanoparticles prepared in vacuum by using different laser wavelengths. The fundamental wavelength and the second, third, and fourth harmonics of a nanosecond Nd:YAG laser were used for nanoparticles fabrication. The corresponding values of the laser fluence for each wavelength were: 0.6 J/cm² at 266 nm, 0.8 J/cm² at 355 nm, 2.8 J/cm² at 532 nm, and 2 J/cm² at 1064 nm. The Ag nanoparticles produced have mean diameters in the range from 2 nm to 12 nm as the nanoparticles’ size decreases with the decrease of the wavelength used. The presence of the Ag nanoparticles was also evidenced by the appearance of a strong optical absorption band in the measured UV-VIS spectra associated with surface plasmon resonance (SPR). A redshift and widening of the absorption peak were observed as the laser wavelength was increased. Some additional investigations were performed in order to clarify the structure of the Ag nanoparticles.     

Detection of buried layers in silicon devices using LIBS during hole drilling with femtosecond laser pulses

Femtosecond laser micromachining together with Laser Induced Breakdown Spectroscopy (LIBS) allows us to drill precise hole in materials to internal buried layers as well as characterize the materials while drilling. We report detection of a metal layer buried deep inside silicon by creating an access hole through the semiconductor. We used 800 nm femtosecond laser pulses to carry out the drilling while monitoring the plasma emission with a spectrometer system. Higher drilling rates of 1 μm per shot were achieved using a Gaussian laser beam profile with peak fluences of 42 J/cm². Lower drilling rates of 30 nm per pulse with better accuracy could be achieved using lower intensity flat top beam profiles at fluences of 1.4 J/cm².     

LiGdF4:Tm3+: spectroscopy and diode-pumped laser experiments

A novel LiGdF₄ crystal doped with Thulium ions has been grown using the Czochralski technique. Three samples with doping concentrations of 0.3 at.%, 8 at.%, and 12 at.% have been extensively spectroscopically analyzed. We also performed room-temperature preliminary laser experiments, pumping the samples with a laser diode at 792 nm obtaining 53% as maximum slope efficiency with a maximum output power of 205 mW and a minimum lasing threshold of 22 mW. The laser emission spectrum in free running condition typically spans between 1990 and 2018 nm.     

Characteristics of laser-produced Ge ion fluxes used for modification of semiconductor materials

This paper describes the laser generation of Ge ion fluxes and their application to the modification of semiconductor materials by ion implantation. The Ge ions were produced by ablating solid targets using the PALS high-power iodine laser system at the PALS Research Centre in Prague, operating at its third harmonic frequency (438 nm wavelength) and producing 0.4 ns pulses with energy up to 0.25 kJ (intensity≤10¹⁵ W/cm²). The goal of these investigations was optimisation of the implantation of low and medium energy laser-generated Ge ion fluxes and they were carried out as part of the project PALS000929. Recently, a new repetitive pulse laser system at IPPLM in Warsaw, with a wavelength of 1.06 μm, energy of ～0.8 J in a 3.5 ns-pulse, repetition rate of up to 10 Hz, and intensity on target of up to 10¹¹ W/cm², has also been employed to produce Ge ions by irradiating solid targets. The laser-generated ions were investigated with diagnostics based on the time-of-flight method: various ion collectors and an electrostatic ion-energy analyzer. The Ge ion fluxes were implanted into Si and SiO₂ substrates located at distances of 10–30 cm from the target. The SiO₂ films were prepared on single crystal Si substrates and were implanted with Ge ions with different properties. The properties of the Ge-implanted layers, in particular, the depth distributions of implanted Ge ions, were characterised using Rutherford backscattering and other material surface diagnostic methods.     

Designing an all epitaxial 1,550 nm intra-cavity VCSEL using GaInAsN/AlGaInAs in the active region and AlGaAsSb/AlAsSb in top and bottom DBRs

In this paper, a 1,550 nm Intracavity structure vertical cavity surface emitting laser (VCSEL) has been designed using quaternary compound QW/barrier materials of GaInAsN/AlGaInAs matched with InP substrate. This choice has been made instead of choosing widely used GaInAsP/InP and AlGaInAs/InP to gain some advantages. In addition to the introduction of new combination in the active region, a different compound semiconductor combination AlGaAsSb/AlAsSb has been used as the DBR material for achieving lattice matching and also for achieving higher refractive index contrast. Compared to widely used GaAs/AlGaAs DBR mirror system, which needed wafer fusion with the top and bottom sides of the active region at 1,550 nm, the chosen DBR of this design is advantageous. The active material compositions have been chosen to obtain a peak gain at 1,550 nm and all other compositions have been chosen to obtain close lattice match at the same time to obtain the desired bandgap at the desired layers. The end result of this design is a VCSEL based on InP substrate which is capable of producing 1,550 nm light output and which can be constructed using widely used epitaxial techniques because all of the layers are lattice matched.     

RBS analysis of ions implanted in light substrates exposed to hot plasmas laser-generated at PALS

Ge and Ta ion implantation of silicon and carbon substrates has been obtained at PALS Research Laboratory in Prague by using laser pulses of 400 ps duration, 438 nm wavelength, 10^14?16 W/cm² intensity. Substrates were exposed in vacuum at different distances from the target and at different angles with respect to the normal to the target surface. ‘On line’ measurements of ion energy were obtained with time-of-flight techniques by using an electrostatic deflector as ion energy analyzer. ‘Off line’ measurements of ion energy were obtained by Rutherford backscattering spectrometry (RBS) of 2.25 MeV He²⁺ beam at CEDAD Laboratory of Lecce University. The RBS spectra have given the depth profiles of the ion-implanted species and the implanted doses as a function of the laser intensity, angular position and target distance. A spectra deconvolution method based on the ion stopping power in the substrate matrix was applied in order to evidence the energy of the implanted ions. Measurements indicate that ions with energy ranging between 100 keV and 10 MeV and dose of the order of 10^14?16/cm² are implanted and that the process of ion implantation occurs mainly in substrates placed at little angles with respect to the normal to the target surface. Only a thin film deposition occurs for substrates placed at large angles with respect to the normal direction. Results indicate that the ion energies measured with the ‘on line’ and the ‘off line’ techniques are in good agreement.     

Analysis of the Opacity of Magnesium XII 0.842 nm Doublet in the Solar Coronal X-ray Spectrum

Using the observed intensity ratio of the magnesium XII 0.842 nm doublet in the solar coronal X-ray spectrum, we investigate the opacity of the (1/2–3/2) component of the magnesium XII doublet. The escape factor and the opacity of the (1/2–3/2) component of the magnesium XII 0.842 nm doublet are discussed. Results show that the opacity has great effect on the (1/2–3/2) component of the magnesium XII 0.842 nm doublet. While using the abundance of magnesium and the results of ionization balance, we calculate the variation of electron density as a function of observed intensity ratio.     

All-solid-state continuous-wave laser systems for ionization,cooling and quantum state manipulation of beryllium ions

We describe laser systems for photoionization, Doppler cooling, and quantum state manipulation of beryllium ions. For photoionization of neutral beryllium, we have developed a continuous-wave 235 nm source obtained by two stages of frequency doubling from a diode laser at 940 nm. The system delivers up to 400 mW at 470 nm and 28 mW at 235 nm. For control of the beryllium ion, three laser wavelengths at 313 nm are produced by sum-frequency generation and second-harmonic generation from four infrared fiber lasers. Up to 7.2 W at 626 nm and 1.9 W at 313 nm are obtained using two pump beams at 1051 and 1551 nm. Intensity drifts of around 0.5 % per hour have been measured over 8 h at a 313 nm power of 1 W. These systems have been used to load beryllium ions into a segmented ion trap.     

A 3D-CMOS compatible silicon photo-sensor with a large vertical photosensitive area

This paper introduces design and simulation of a three-dimensional complementary metal–oxide–semiconductor CMOS compatible photo-sensor based on a silicon substrate. In the structure of photo-sensor, a vertical n+/p junction as a photosensitive area is formed on one side of a U-groove, and perpendicular to a lateral n-i-p structure on top-side of the silicon surface. This configuration enables a direct butt-coupling of a fiber-optic to the photosensitive area, which is a privilege for many remote monitoring applications. The device analysis is carried out by a two-dimensional simulation using SILVACO TCAD simulator. The thickness of the photo-sensitive area is investigated by considering the figures of merit for the two different thicknesses of 30 and 50 µm. The simulated results (according to the parameters defined for the Si substrate) show a very low dark current of 70 and 100 (fA/μm) for the 30 and 50 µm thicknesses, respectively. In addition, a high photo-current to dark current ratio of ~3000 is achieved under an intensity of 2 mW/cm² at 633 nm wavelength, according to the wavelength of red He–Ne laser. The sensor demonstrates a responsivity of 0.33 A/W corresponding to 65% external quantum efficiency and a ?3 dB frequency response of 0.2 GHz under a small signal of 2 mW/cm² at 633 nm wavelength for 10 V reverse bias.     

Analysis of Upconversion Fluorescence Dynamics in NaYF4 Codoped with Er3+ and Yb3+

The efficiency of upconversion fluorescence for Er³⁺ and Yb³⁺ codoped into NaYF₄ powder crystals is investigated. The dependence of Er³⁺ green (540 nm) and red (660 nm) upconversion fluorescence intensities on laser excitation intensity and the ratio of the green and red fluorescence intensities respectively under 355‐nm and 936‐nm excitations have been measured and analyzed in terms of radiative and nonradiative relaxation mechanisms. It is shown that the intensity of both the green and red upconversion fluorescence bands is affected at high pumping intensities by a low‐lying state acting as a bottleneck, with the red fluorescence less affected than the green. In addition to two‐photon, two‐step excitation and energy transfer processes, nonlinear optical coupling mechanisms of avalanche processes appear responsible for reducing the bottleneck saturation of the red upconversion fluorescence.     

Integrating sphere effective optical path length calibration by gas absorption spectroscopy

A method of integrating sphere effective optical path length (EOPL) evaluation using tunable diode laser absorption spectroscopy for gas detection was demonstrated. Oxygen was used as a sample gas for an 8.38 cm diameter integrating sphere calibration; 393.7 ± 1.3 cm EOPL was obtained from the wavelength modulation spectroscopy with second harmonic calibration by measuring oxygen P11 line at 764 nm, which is in agreement with that of 393 cm by using direct absorption spectroscopy calibration. The EOPL calibration accuracy of this method can reach 0.33 %. It has been justified that the EOPL of an integrating sphere is independent of the incident light intensity.