Cd掺杂p型Ge基Ba8Ga16CdxGe30-x Ⅰ型笼合物的结构及热电特性

以Cd作为掺杂元素,用熔融法结合放电等离子体烧结(SPS)技术制备了具有不同Cd含量的Ba8Ga16CdxGe30-x(x=0.95,1.00,1.05,1.10) Ⅰ型笼合物,研究了Cd掺杂对其结构及热电性能的影响.Rietveld结构解析表明所制备的Ba8Ga16CdxGe30-x化合物为空间群pm3n的Ⅰ型笼合物,Cd原子主要占据在框架6c和16i位置上且具有较大的原子位移参数(ADP).所有样品均表现为p型传导,样品的载流子散射机制由低温的杂质电离散射为主逐渐过渡到高温的声学波散射为主.随Cd掺杂量的增加,对应化合物电导率逐渐增加,Seebeck系数逐渐降低.由于Cd原子较大的ADP,从而导致较低的晶格热导率,在室温附近,Ba8Ga16Cd1.10Ge28.90化合物的晶格热导率与Ba8Ga16Ge30化合物相比约降低38%.Ba8Ga16Cd1.00Ge29.00化合物的最大ZT值在600 K时为0.173.     

Zn掺杂n型笼合物Ba8Ga16-2xZnxGe30+x的热电传输特性

用高温熔融结合放电等离子烧结法制备了Zn掺杂单相n型Ba8Ga16-2xZnxGe30 x笼合物,探索了Zn对Ga的取代对其热电传输特性的影响规律.研究结果表明,n型Ba8Ga16-2xZnxGe30 x化合物的电导率随着x的增加逐渐增大,Seebeck系数随着x的增加而逐渐减小.当Zn完全取代Ga时,Ba8Zn8Ge38化合物的电导率反而急剧下降,Seebeck系数显著增大.Ba8Ga16-2xZnxGe30 x化合物的载流子迁移率随着温度的升高而降低,当Zn掺杂后,化合物的载流子迁移率有一定的增加,随着x的增加而逐渐增大.Ba8Ga16-2xZnxGe30 x化合物的热导率和晶格热导率变化规律类似,随着x的增加先减小后增大.在所有n型Ba8Ga16-2xZnxGe30 x笼合物中,Ba8Ga8Zn4Ge34化合物的ZT值最大,在1000 K时其最大ZT值达0.85.     

Zn掺杂P型Ba8Ga16ZnxGe30-x笼合物的合成及热电性能

用熔融法结合放电等离子烧结方法合成了Zn掺杂单相p型Ge基Ⅰ型笼合物Ba8Ga16ZnxGe30-x(x=3,4,5,6),探索Zn取代Ge对其热电性能的影响规律,结果表明:所制备的Ba8Ga16ZnxGe30-x化合物为p型传导,随Zn取代量x的增加,化合物室温载流子浓度Np逐渐增加,室温载流子迁移率μH和电导率逐渐降低.在所有试样中,Ba8Ga16Zn3Ge27化合物的Seebeck系数α在300—870K内始终最大,温度为300K时Seebeck系数为234μV/K,在700K附近达295μV/K.化合物的热导率随Zn取代量x的增加而降低.Ba8Ga16Zn3Ge27化合物在806K最大ZT值达0.38.     

Ba8Si46、Ba8Cu6Si40和Ba8Au6Si40电子特性的研究

布居分析和态密度结果均表明,Ba8Si46化合物中Ba原子6s轨道上电子一部分向5d轨道转移,另一部分向笼上Si原子3p轨道转移.对于Ba8Cu6Si40、Ba8Au6Si40分析结果表明,由于Cu(Au)向Si转移部分电子,导致了Cu(Au)-6c与Si-24k原子间成键由共价键趋向离子键.带结构的分析表明三者均为弱金属,其中Ba8Cu6Si40和Ba8Au6Si40的导电能力更强一些.     

Ba8Si46、Ba8Au6Si40和Ba8Cu6Si40电子特性的研究

布局分析和态密度结果均表明,Ba8Si46　化合物中Ba原子6s轨道上电子一部分向5d轨道转移,另一部分向笼上Si原子3p轨道转移.对于Ba8Au6Si40、Ba8Cu6Si40分析结果表明,由于Cu (Au) 向Si转移部分电子,导致了Cu (Au)-6c与Si-24k原子间成键由共价键趋向离子键.带结构的分析表明三者均为弱金属,其中Ba8Cu6Si40和Ba8Au6Si40的导电能力更强一些.     

Ⅰ型锗基笼合物Ba8Ga16-xSbxGe30的合成及热电性能

用高温熔融结合放电等离子烧结(SPS)方法合成了Sb掺杂的单相n型Ba8Ga16-xSbxGe30化合物,探索了Sb对Ga的取代对其热电性能的影响规律.研究结果表明随着Sb取代分数x的增加,Seebeck系数逐渐降低,Seebeck系数峰值对应的温度向低温方向偏移.电导率随着x的增加先增大后减小,当x=2时达到最大值.Sb取代Ga后对化合物的热性能有较大影响,其热导率和晶格热导率都有不同程度的降低.在所有n型Ba8Ga16-xSbxGe30化合物中,Ba8Ga14Sb2Ge30化合物的ZT值最大,在950 K左右其最大ZT值达1.1.     

I型锗基笼合物Ba8Ga16-xSbxGe30的合成及热电性能

用高温熔融结合放电等离子烧结（SPS）方法合成了Sb掺杂的单相n型Ba8Ga16-xSbxGe30化合物，探索了Sb对Ga的取代对其热电性能的影响规律．研究结果表明：随着Sb取代分数x的增加，Seebeck系数逐渐降低，Seebeck系数峰值对应的温度向低温方向偏移．电导率随着x的增加先增大后减小，当x=2时达到最大值．Sb取代Ga后对化合物的热性能有较大影响，其热导率和晶格热导率都有不同程度的降低．在所有n型Ba8Ga16-xSbxGe30化合物中，Ba8Ga14Sb2Ge30化合物的ZT值最大，在950K左右其最大ZY值达1．1．     

基于密度泛函紧束缚方法的SixGey（n=x+y，n=2~5）团簇成键条件与解离行为研究

采用基于密度泛函理论的紧束缚方法和遗传算法相结合的方法对SixGey（x+y=n,n=2~5）二元团簇的低能稳定结构进行了全局搜索,分析了包含不同原子数目、不同组分团簇的几何构型、原子间交叠电子布居数及可能发生的解离行为。研究表明,包含2~5原子团簇的Si-Si、Ge-Ge和Si-Ge键的成键距离分别为2.18 Å ~ 3.10 Å、2.32 Å ~ 3.64 Å和2.32Å ~ 3.38 Å;二元团簇的原子数目、组分对原子间键长、键角及Si/Ge原子在团簇中的占位、原子间相互作用有明显影响。通过团簇中各原子的Mülliken总交叠电子布居数分析,发现多数团簇中单独的Ge原子最容易被解离出来,随着团簇包含原子数目增多,出现了多种存在竞争机制的解离方式,可能同时存在解离出Si1Ge1、Si2Ge1和Ge原子的情况。     

Ga掺杂δ-Pu的密度泛函理论计算

δ-Pu为Pu的高温相,掺杂少量的Ga即可使其在室温下稳定存在.本文采用密度泛函理论方法,对不同掺杂量体系进行晶体结构和电子结构计算,主要包括体系的晶格常数、密度、形成能、态密度、电荷密度和Mulliken布居分析.结果表明：在研究范围内,Ga掺杂后,体系晶格常数降低,密度增大,6.25%（原子百分比,下同）掺杂量体系的稳定性高于3.125%和12.5%掺杂量的体系;Ga掺杂使得Pu周围体系电子的局域性增强,成键能力增强,揭示了Ga稳定δ-Pu的电子机制.Ga和Pu之间为金属键,发生的作用主要由Pu的7s、6p、6d和Ga的4s、4p轨道电子贡献,但这种成键作用相对较弱,使得掺杂体系可以保持原有的力学性能和机械加工性能.Ga对δ-Pu的稳定作用主要在于改善Pu原子的成键性能,而不是与Pu原子直接成键.     

Si6N2团簇结构与性质的密度泛函理论研究

用密度泛函理论(DFT)中的杂化密度泛函B3LYP方法,在6-31G(d)的水平上对Si6N2团簇的可能结构进行了几何结构优化和电子结构计算,得到了16个可能的异构体.Si6N2团簇的最稳定结构是有4个Si-N键和4个Si-Si键的三维结构.自然键轨道方法分析成键性质的结果表明,Si-N键中Si原子向N原子有较大的电荷转移,因此Si-N原子间有较强的电相互作用;最强的IR和Raman谱峰分别位于1359.14cm-1和1366.29cm-1处;并计算了Si6N2团簇的最稳定结构的极化率和超极化率.     

Direct experimental evidence for atomic tunneling of europium in crystalline Eu8Ga16Ge30

M?ssbauer-effect and microwave absorption experimental evidence unambiguously demonstrates the presence of slow, approximately 450 MHz, tunneling of magnetic europium between four equivalent sites in Eu8Ga16Ge30, a stoichiometric clathrate. Remarkably, six of the eight europium atoms, or 11% of the constituents in this solid, tunnel between these four sites separated by 0.55 A. The off centering of the atoms or ions in crystalline clathrates appears to be a promising route for producing Rabi oscillators in solid-state materials.     

Probing Phonon Scattering Sites in the Thermoelectric Clathrate Eu8Ga16Ge30

The low thermal conductivity of the Thermoelectric Clathrates Eu₈Ga₁₆Ge₃₀ and Sr₈Ga₁₆Ge₃₀ has been attributed to rattling atoms (Eu or Sr) in the Eu2/Sr2 sites. The low Einstein temperature obtained using XAFS for the nearest neighbor Eu-Ga/Ge bonds at the Eu2 sites is consistent with the model. However, the comparable Einstein temperature for the Eu1 site indicates that Eu1 is also a rattler. The fit also confirms that the Eu2 is displaced along either the y or z axis ～ 0.45Å in agreement with neutron diffraction.     

Four-well tunneling States and elastic response of clathrates

We present resonant ultrasound elastic constant measurements of the Eu8Ga16Ge30 and Sr8Ga16Ge30 clathrates. The elastic response of the Eu clathrate provides clear evidence for the existence of a new type of four-well tunneling states, described by two nearly degenerate four level systems (FLS). The FLS's are closely linked with the fourfold split positions of Eu known from neutron diffraction density profiles. Using a realistic potential we estimate the tunneling frequencies and show that the energy gap between the two FLS's explains the observed harmonic oscillator type specific heat. In addition the quadrupolar interaction of FLS's with elastic strains explains the pronounced depression observed in elastic constant measurements. In the case of the Sr clathrate, we explain the elastic properties assuming the same type of interaction, but with Sr Einstein mode.     

Off-center rattling and anisotropic expansion of type-I clathrates studied by Raman scattering

Dynamical motions of the guest ions in type-I clathrates Sr8Ga16Si(30-x)Gex and Ba8Ga16Si(30-x)Gex have been studied by Raman scattering spectroscopy, to clarify the role of guest vibration modes in these systems with unusual thermal transport behaviors. An anomalous decrease of the guest energies with decreasing temperature is observed for both systems. The Ge-doping expands the cage surrounding the 6d site anisotropically for Sr8Ga16Si(30-x)Gex, but isotropically for Ba8Ga16Si(30-x)Gex. Especially for Sr8Ga16Si(30-x)Gex, off-center rattling arises simultaneously with the anisotropic expansion, and it is confirmed that these anomalies play a crucial role to suppress lattice thermal conductivity in these systems.     

FeMnP_(1-x)T_x(T=Si,Ga,Ge)系列化合物机械性能的第一性原理研究

以密度泛函理论为基础,使用投影缀加波方法、VASP程序包研究了FeMnP_(1-x)T_x(T=Si,Ga,Ge)化合物的力学性质,结果表明FeMnP_(1-x)Ga_x化合物的晶格参数、弹性常数和电子结构与FeMnP_(1-x)Ge_x化合物比较接近,同时该化合物在力学上稳定,是预期具有较大的磁熵变和高磁热效应的材料.依据Pugh判据,FeMnP_(0.67)T_(0.33)(T=Si,Ga,Ge)化合物具有良好的延展性,三者之中FeMnP_(0.67)Ga_(0.33)韧性最好,FeMnP_(0.67)Si_(0.33)韧性相对较差,说明Ga替代P可改善此类化合物的机械性能.最后从化合物体系电子总态密度随不同掺杂T原子的演化规律解释了自洽计算得到的弹性常数的变化规律.     

Thermoelectric properties and structural instability of type-I clathrate Ba8Ga16Sn30 at high temperatures

Type-I clathrate Ba₈Ga₁₆Sn₃₀ is known as a typical example showing glass-like behavior in the thermal conductivity at low temperatures. We report on thermoelectric properties above room temperature for the p- and n-type single crystals which were grown from Ga–Sn double flux and Sn single flux, respectively. The measurements of electrical resistivity showed hysteretic behaviors when the sample was heated to 600 K. Powder X-ray diffraction analysis indicated that the type-I structure changed to the type-VIII after the sample was heated to 600 K. By using the data of Seebeck coefficient, electrical resistivity, and thermal conductivity, we estimated the dimensionless figure of merit ZT for the type-I Ba₈Ga₁₆Sn₃₀. For the p- and n-type samples, the values of ZT reach 0.58 and 0.50 at around 450 K, respectively, which values are approximately half of those for the type-VIII counterparts.     

Theoretical study of the lattice thermal conductivity in Ge framework semiconductors

The lattice thermal conductivity of Ge clathrates is investigated by evaluating the linear response theory heat current correlation functions using molecular dynamics. Clathrate crystals with and without guest atoms in their fullerane cages are studied. In comparison with that of diamond-phase Ge, the clathrate conductivity is reduced by approximately 1 order of magnitude due to the open framework itself. The addition of an encapsulated (rattling) Sr guest atom produces a further order of magnitude reduction in the conductivity, making it comparable to that of amorphous Ge. Our results are consistent with experiments, and have impact on the search for improved thermoelectric materials.     

Epitaxial growth of Ba8Ga16Ge30 clathrate film on Si substrate by RF helicon magnetron sputtering with evaluation on thermoelectric properties

Epitaxial Ba₈Ga₁₆Ge₃₀ clathrate thin films were successfully grown on Si substrate by using helicon magnetron sputtering. The (1 0 0) lattice of Ba₈Ga₁₆Ge₃₀ was identified grown on four Si(2 0 0) lattices in small mismatch (0.1%). Both the color of samples and XRD results suggest 600 °C is the optimal substrate temperature for the growth of high quality Ba-Ga-Ge clathrate film on Si substrates. High Seebeck coefficients and electrical resistivities for the deposited clathrate thin films in comparison with those of bulk are obtained. The high crystal quality and thermionic effects in heterostructures may contribute to the larger Seebeck coefficients, while the increasing of interface scattering for electrons probably is the reason for large electrical resistivities. Although the thermoelectric (TE) results are not ideal as designed, our results are significant due to the first successful work on epitaxial growth of Ba₈Ga₁₆Ge₃₀ clathrate thin films on Si substrate with large Seebeck coefficient.