Optical and electrical characterization of cadmium selenide doped with cobalt

The optical and electrical properties of Co²⁺ ions in CdSe have been investigated. Absorption, photoluminescence, electron paramagnetic resonance, and Hall measurements were used to characterize a cobalt-doped (1×10¹⁹ cm⁻³) single crystal. Infrared absorption and emission spectra associated with transitions between the ⁴A₂(F) ground state and the ⁴T₁(F) and ⁴T₂(F) excited states are described. At 10 K, spin-orbit splittings result in three structured absorption bands associated with the ⁴A₂(F) to ⁴T₁(F) transition having zero-phonon lines at 4926, 5101, and 5724 cm⁻¹. The ⁴A₂(F) to ⁴T₂(F) transition shows two zero-phonon lines at 2874 and 3286 cm⁻¹, also accompanied by vibronic structure. Intrinsic lattice modes explain most of the sharp-line structure observed at low temperature, except for a subset of peaks where local modes (25-30 cm⁻¹) are invoked. Using below-band-gap light, selective excitation allows detection of the ⁴T₁(F) to ⁴A₂(F) recombination at liquid-helium temperatures. The activation of free carriers in our n-type material containing shallow donors is affected by the presence of cobalt, and we find the Co^+/++ level to be about 34 meV below the conduction band of CdSe.     

Structural studies and mechanical properties of some borate glasses doped with different alkali and cobalt oxides

Mixed alkali borate glasses doped with CoO, have been prepared by the melt quenching technique. Elastic properties and FT-IR spectroscopic studies have been employed to study the role of CoO and the mixed alkali effect on the structure of the investigated glass system. Elastic properties and Debye temperature have been investigated using sound wave velocity measurements at 4 MHz at room temperature. The density, molar volume and glass transition temperatures were employed to investigate the structure of these glasses. Infrared spectra of these glasses revealed that the borate network is affected by the increase in the concentration of CoO content and the mixed alkali oxides. These results are interpreted in terms of the change in the topology of these glass structures. The elastic moduli are observed to increase with the increase of CoO content due to the increased average bond connectivity.     

Optical absorption studies on cobalt doped struvite

Abstract

Optical absorption spectrum of cobalt doped MgNH₄PO₄ · 6H₂O (struvite) is investigated in UV-VIS-NIR regions. The spectrum in UV-VIS-NIR region is attributed to Co²⁺ in octahedral symmetry whereas the IR spectrum is attributed to vibrations due to PO₄ ^3-, NH₄ ⁺ and H₂O. The following crystal field (Dq) and interelectronic repulsion (B, C) parameters are evaluated: Dq = 940cm^?1, B = 870cm^?1 and C = 3970cm^?1.     

Optical, electrical, and photophysical properties of films of polycomplexes of azobenzene derivatives with cobalt

The absorption spectra, photoconductivity, and electrical conductivity of films of new polycomplexes of 4-methacyloyloxy-(4′-carboxy-3′-oxy)azobenzene and 4-methacryloyloxy-2-nitro-(4′-carboxy-3′-oxy)azobenzene with cobalt were investigated with switched-off and switched-on external electric fields. The effect of an external electric field on the transmission of linearly polarized light through films near the long-wavelength absorption edge is revealed. It is shown that the change in the light transmission under the action of an external electric field is due to the spatial reorientation of the dipole moments of azobenzene groups photoinduced by polarized light in an external electric field. The effect of an electric field on the light transmission is explained by the formation of forces acting on the dipole moments of azobenzene groups and on metal ions. The increase in the dipole moments of azobenzene groups as a result of introduction of nitro groups into their composition decreases the effect of cobalt ions on the electro-optical properties of polycomplex films.     

Magnetic and resonance properties of ferrihydrite nanoparticles doped with cobalt

Powders of undoped ferrihydrite nanoparticles and ferrihydrite nanoparticles doped with cobalt in the ratio of 5: 1 have been prepared by hydrolysis of 3d-metal salts. It has been shown using Mössbauer spectroscopy that cobalt is uniformly distributed over characteristic crystal-chemical positions of iron ions. The blocking temperatures of ferrihydrite nanoparticles have been determined. The nanoparticle sizes, magnetizations, surface anisotropy constants, and bulk anisotropy constants have been estimated. The doping of ferrihydrite nanoparticles with cobalt leads to a significant increase in the anisotropy constant of a nanoparticle and to the formation of surface rotational anisotropy with the surface anisotropy constant K _u = 1.6 × 10^–3 erg/cm².     

Optical and electrical characterization of aluminium doped ZnO layers

Al doped ZnO (ZAO) thin films (with Al-doping levels 2 at.%) were deposited at different deposition parameters on silicon substrate by reactive magnetron sputtering for solar cell contacts, and samples were investigated by transmission electron microscopy (TEM), electron energy loss spectroscopy (EELS) and spectroscopic ellipsometry (SE). Specific resistances were measured by the well known 4-pin method. Well visible columnar structure and in most cases voided other regions were observed at the grain boundaries by TEM. EELS measurements were carried out to characterize the grain boundaries, and the results show spacing voids between columnar grains at samples with high specific resistance, while no spacing voids were observed at highly conductive samples. SE measurements were evaluated by using the analytical expression suggested by Yoshikawa and Adachi [H. Yoshikawa, S. Adachi, Japanese Journal of Applied Physics 36 (1997) 6237], and the results show correlation between specific resistance and band gap energy and direct exciton strength parameter.     

Optical and thermal properties of doped semiconductor

The knowledge of doping effects on optical and thermal properties of semiconductors is crucial for the development of optoelectronic compounds. The purpose of this work is to investigate theses effects by mirage effect technique and spectroscopic ellipsometry SE. The absorption spectra measured for differently doped Si and GaAs bulk samples, show that absorption in the near IR increases with dopant density and also the band gap shifts toward low energies. This behavior is due to free carrier absorption which could be obtained by subtracting phonon assisted absorption from the measured spectrum. This carrier absorption is related to the dopant density throw a semi-empirical model.     

Structural and optical properties of cobalt doped ZnO nanocrystals

Zn_1−xCo_xO nanocrystals with nominal Co doping concentrations of x = 0–0.1 were synthesized through a simple solution route followed by a calcining process. The doping effects on the structural, morphological and optical properties were investigated by means of X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman, absorption and luminescence spectroscopy. The results indicated that a small amount of Co ions were incorporated into ZnO lattice structure, whereas the secondary phase of Co₃O₄ was segregated and precipitated at high Co doping concentrations, the solid solubility of Co ions in ZnO nanocrystals could be lower than 0.05. The spectra related to transitions within the tetrahedral Co²⁺ ions in the ZnO host crystal were observed in absorption and luminescence spectra.     

Optical properties of doped graphene layers

The reflectance of a graphene monolayer, as well as of a system of monolayers, is calculated in the infrared range. A quantum expression for the conductivity in the collisionless regime that depends on the frequency, the temperature, and the concentration of carriers is used in the calculations. Above the threshold of the interband electron absorption, the reflectance decreases with increasing frequency. With decreasing temperature, excitation of plasmons in the system of layers is possible in a narrow range near the threshold, which results in the occurrence of a deep and sharp minimum in the frequency dependence of the reflectance.     

Optical properties of doped quasi-two-dimensional systems

A wide class of experimental data on luminescence in doped two-dimensional systems is explained in terms of multiphonon optical transitions. A zero-radius-potential model is employed to describe localized states in square quantum wells. Specifically, it is shown that the luminescence intensity varies nonmonotonically with the acceptor-impurity position, whereas the half-width of the luminescence peak decreases with the impurity distance from the center of the size-confined system. The features of luminescence in a longitudinal magnetic field are investigated.     

Spectroscopic properties of magnesium aluminosilicate glass-ceramics doped with divalent cobalt ions

Electronic absorption and luminescence spectra and nonlinear optical properties of magnesium aluminosilicate glass-ceramics doped with divalent cobalt ions are studied in relation to their synthesis conditions. The lifetimes of the ⁴ T ₁(⁴ P) and ⁴ T ₁(⁴ F) excited levels of tetracoordinate Co²⁺ ions in these glass-ceramics are found to depend on the cobalt concentration and lie within the ranges from 25 to 40 and from 120 to 450 ns, respectively. Using the absorption saturation curves, the ground state absorption cross section for the wave-length of 1.54 μm is estimated to be σ_GSA=3.3×10^?19cm². The induced emission of the tetrahedrally coordinated Co²⁺ ion, which dominates over the absorption from the excited state in the spectral range from 640 to 690 nm (⁴ T ₁(⁴ P)→⁴ A ₂ transition), is found.     

Transport properties and stability of cobalt doped proton conducting oxides

Cobalt doping between 2 and 10 at.% was utilized to lower the required sintering temperature of materials in the series BaCe_0.5Zr_0.4(Y,Yb)_0.1 ? yCo_yO_3 ? δ to between 1373 and 1698 K. The required sintering temperature decreased with increasing Co content; however, significant electronic conductivity was observed in both oxidizing and reducing environments for materials with 10 at.% Co. This was accompanied by a loss of chemical stability in H₂O/H₂ and CO₂ environments. BaCe_0.5Zr_0.4Yb_0.07Co_0.03O_3 ? δ was stable in these environments and provided the highest proton conductivity of the materials tested, 1.98 × 10^? 3 S/cm at 923 K in humidified H₂. Measurements in a hydrogen concentration cell indicated that the total ionic transference number for this material was between 0.86 and 1.00 with proton transference number between 0.84 and 0.75 at 773 and 973 K respectively. Under oxidizing conditions, the ionic transference number decreased to below 0.10. The grain boundary resistance dominated the total conductivity at low temperatures but was found to decrease with increased sintering temperature due to grain growth.     

Optical properties of aluminum oxide after irradiation with cobalt ions

Optical absorption of leucoosapphire and polycrystalline corund (polycor) is studied after irradiation with cobalt ions and subsequent annealing in a vacuum. The structure of states localized in the forbidden band and induced by various imperfections has a higher stability to annealing as compared to the case of implantation of other types of ions into aluminum oxide. The fan-like behavior of the dose-dependent absorption spectra is a consequence of the defect-induced disordering of crystal lattices. It is determined that intrinsic radiation-induced defects, substitutional defects, complexes containing them, and Co nanoparticles have an influence on the parameters of the focal point of the absorption spectra. The parameters of the interband and exponential absorption demonstrate the formation of a new multidefect material with a band gap width ranging from 5.3 to 5.5 eV and an absorption edge at 2.0–5.2 eV caused by the localized states of defect clusters.     

Optical and structural properties of fullerene films doped with cadmium telluride

Composite thin-film structures based on C₆₀/CdTe were prepared by discrete vacuum evaporation in a quasi-closed volume and by vacuum evaporation from a Knudsen cell. The synthesized fullerene samples contained cadmium telluride with a content ranging from 1 to 50 wt %. The morphology and composition of the films were controlled using scanning electron microscopy and energy-dispersive X-ray analysis. The optimum geometry, the total energy, and the spectrum of excited states of the fullerene-cadmium telluride molecular complex were calculated by quantum-chemical methods. The spectral dependences of the photo-luminescence, Raman scattering, extinction coefficient, and refractive index were measured for different compositions. It was found that, in contrast to the spectra of pure fullerene, the luminescence and absorption spectra of the fullerene doped with cadmium telluride exhibit an additional peak in the wavelength range of 600–620 nm. These data were interpreted as the existence of dipole-allowed transitions in the spectrum of excited singlet states of the fullerene due to the interaction with cadmium telluride. The composite films had an increased resistance to degradation under the action of oxygen and water vapor.     

Optical and electrical properties of tin-dioxide films

Summary The electro-optical properties of thin SnO₂ films are analysed in relation to different experimental deposition conditions. Heating tests have been performed on the samples; the results are discussed.

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Riassunto Si analizza l'influenza di differenti condizioni sperimentali di deposizione sulle proprietà elettro-ottiche di film sottili di SnO₂. Si riportano i risultati di prove di invecchiamento condotte mediante cicli termici.

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Резюме Анализируется влияние различных экслериментальных условий напыления на электрические и оптические свойства тонких пленок диоксида олова. Проводятся испытания с использованием темических циклов. Обосуждаются полученные резльтаты.

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This work has been performed in the framework of activities of the ?Progetto Finalizzato Energetica? supported by the C.N.R.     

Optical and electrical properties of turpentine films

The basic optical and electrical properties of turpentine, a biologically active natural organic compound, are studied. At wavelengths from 350 to 550 nm, the room-temperature photoluminescence spectrum of turpentine shows a number of peaks. In the temperature range 280–300 K, the activation energy of conduction is found to be 0.53 eV, which is much lower than the optical bandgap and indicates the hopping mechanism of conduction with a variable length of hops between states near the Fermi level.     

Optical properties of samarium doped zinc-phosphate glasses

Samarium doped zinc-phosphate glasses having composition Sm₂O_{3 (x)}ZnO_(60−x) P₂O_{5 (40)} (where x=0.1-0.5 mol%) were prepared by melt quenching method. The density of these glasses was measured by Archimedes method; the corresponding molar volumes have also been calculated. The values of density range from 3.34 to 3.87 gm/cm³ and those of molar volume range from 27.62 to 31.80 cm⁻³. The optical absorbance studies were carried out on these glasses to measure their energy band gaps. The absorption spectra of these glasses were recorded in UV-visible region. No sharp edges were found in the optical spectra, which verifies the amorphous nature of these glasses. The optical band gap energies for these glasses were found to be in the range of 2.89-4.20 eV. The refractive index and polarizability of oxide ion have been calculated by using Lorentz-Lorentz relations. The values of refractive index range from 2.13 to 2.42 and those of polarizability of oxide ion range from 6.51×10⁻²⁴ to 7.80×10⁻²⁴ cm³.     

Optical properties of laser-induced heavily doped Si

An analysis of recently reported experimental studies⁽¹⁾ of the optical properties of laser-induced heavily doped Si layers is presented here. The analysis has been made on the basis of models like those of Penn⁽²⁾ and Breckenridge et al.⁽³⁾ Our calculations show that, in general, N_eff, the effective number of electrons contributing to optically induced electronic transitions, increases as does ε₂(E), the imaginary part of the complex dielectric constant. This reflects an increased absorption coefficient for these As-doped samples. These studies have been carried out on samples of Si heavily doped by ion-implantation followed by a laser-annealing process. The conclusions based on these studies are seen to be in accord with those of Aspnes et al.⁽⁴⁾ and Vina and Cardona.⁽⁵⁾     

Optical and electrical properties of propolis films

The basic electrical and optical properties of films made of propolis, which is a natural, biologically active, organic compound, are studied. Photoluminescence is found to exist at room temperature with a maximum at 434 nm. The conduction activation energy in the temperature range 283–300 K is 2.9 eV and correlates with the optical band gap.     

Optical and electrical properties of amorphous arsenic

Amorphous arsenic prepared by plasma decomposition of arsine has been characterized using field-effect conductance, thermopower, optical absorption, and photoconductivity measurements. It is found that the Fermi level is located in a density of states ～ 10¹⁷ cm^?3 eV^?1 approximately in the center of the forbidden gap, that conduction occurs via electrons in extended states in the conduction band, and that the optical and photoelectrical properties are very similar to those of bulk a-As. It is concluded that a model involving a negative correlation energy for localized states is inappropriate for this material.