Luminescence centers in bismuth-containing oxytungstate ceramics

We have studied the photoexcitation and luminescence spectra of Bi₂WO₆, Y₂WO₆ and Y₂WO₆:Bi ceramics. We used the Alentsev-Fock method to decompose the spectra into elementary components. The emission bands with maximum at 2.93 eV in the luminescence spectrum of Bi₂WO₆, 3.02 eV in the luminescence spectrum of Y₂WO₆, and 2.95 eV in the luminescence spectrum of Y₂WO₆:Bi are assigned to luminescence of self-localized Frenkel excitons. The bands with maxima at 2.35 eV and 1.90 eV in the spectrum of Bi₂WO₆, 2.25 eV and 1.75 eV in the spectrum of Y₂WO₆, and 2.35 eV and 1.85 eV in the spectrum of Y₂WO₆:Bi are connected with oxygen vacancies. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 5, pp. 688–691, September–October, 2007.     

Luminescence centers in thin films of lead and bismuth tungstates

Luminescence spectra of thin films of PbWO₄ and Bi₂WO₆ are invesigated. The Alentsev-Fock method is used to separate the spectra into elementary components. The emission bands with maxima at 2.8 eV in PbWO₄ and at 2.93 eV in Bi₂WO₆ luminescence spectra are interpreted as the emission of self-localized Frenkel excitons. The bands with maxima at 2.35 and 1.75 eV in PbWO₄ and at 2.35 and 1.9 eV in Bi₂WO₆ are related to oxygen vacancies. L’vov State University, 50, Dragomanov St., L'vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 1, pp. 143–145, January–February, 1998.     

Luminescence of Thin Bi2W2O9 Films

The luminescence spectra of thin Bi₂W₂O₉ films have been investigated. The spectra were separated into elementary components by the Alentsev–Fock method. The radiation band with a maximum at 2.43 eV in the luminescence spectrum of Bi₂W₂O₉ has been assigned to the Frenkel autolocalized excitons. The luminescence bands with maxima at 2.10 and 1.90 eV have been assigned to the emission of the centers whose energy levels are located in the forbidden band. The luminescence of the Bi₂W₂O₉ films is due to the emission of the WO₆ complex.     

Luminescence centers in Pb2Bi6O11 and Sn2Bi6O11 ceramics

We have studied the luminescence spectra and luminescence excitation spectra of Pb₂Bi₆O₁₁ and Sn₂Bi₆O₁₁ ceramics at 80 K. We have used the Alentsev-Fock to decompose the spectra into elementary components. We have established that the luminescence spectra of Pb₂Bi₆O₁₁ and Sn₂Bi₆O₁₁ ceramics contain three elementary bands each with maxima at 2.60, 2.32, 12.93 eV and 2.62, 2.30, 2.00 eV. Comparison of the data obtained with the results of a study of the luminescence spectra for a series of bismuth-containing oxide compounds suggest that luminescence of Pb₂Bi₆O₁₁ and Sn₂Bi₆O₁₁ is due to radiative processes in structural complexes containing a bismuth ion in a nearest-neighbor oxygen environment. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 597–600, September–October, 2006.     

Luminescence of Thin Films of Lead and Bismuth Tungstates

The luminescence spectra of thin films of PbWO₄ and Bi₂WO₆ were investigated. It is shown that these spectra are similar and that they consist of three individual bands in the blue (2.80 eV PbWO₄ and 2.93 eV Bi₂WO₆), green (2.35 eV PbWO₄ and Bi₂WO₆), and red (1.75 eV PbWO₄ and 1.90 eV Bi₂WO₆) spectral regions. The differences in the nature of the absorption centers of excitation energy are established. The distinguishing features displayed by the temperature dependences of the individual emission bands in the PbWO₄ films are explained by energy migration between emission centers via transfer of free carriers through the conduction and valence bands.     

Thermostimulated Luminescence of PbWO4, Bi2WO6, and Y2WO6 Ceramics

Thermostimulated luminescence (TSL) of PbWO₄, Bi₂WO₆, and Y₂WO₆ ceramics on x-ray excitation is investigated. The spectral luminosity of the thermostimulated luminescence is analyzed. The thermal activation energies conforming to the corresponding thermostimulated luminescence peaks are determined. It is established that on emptying trapping centers radiative recombination occurs at the intrinsic-luminescence centers associated with tungsten-oxygen complexes WO₄ ^2–.     

Luminescence centers in thin films of yttrium oxide and yttrium-aluminum garnet activated with bismuth

Luminescence spectra and photoluminescence excitation spectra of Y₂O₃:Bi and Y₃Al₅O₁₂:Bi thin films were investigated. Luminescence was stimulated by the emission from two types of centers that were associated with the substitution of Bi³⁺ for Y³⁺ in sites of the crystal lattice of Y₂O₃ (Y₃Al₅O₁₂) with point symmetries C₂ and C_3i (D₂ and C_3i). The emission of Bi³⁺ in the site with point symmetry C_3i causes blue luminescence in both Y₂O₃:Bi and Y₃Al₅O₁₂:Bi films with maxima at 3.03 eV and 3.15 eV, respectively, that is related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry C₂ gives green luminescence in Y₂O₃:Bi with the maximum at 2.40 eV that is also related to the ³P₁-¹S₀ transition. The emission of Bi³⁺ in the site with point symmetry D₂ leads to ultraviolet luminescence in Y₃Al₅O₁₂:Bi with the maximum at 3.75 eV that corresponds to the ³P₁-¹S₀ transition. The red luminescence band with the maximum at 1.85 eV in Y₂O₃:Bi is due to the presence of structural defects. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 2, pp. 202–207, March–April, 2008.     

Luminescence of Thin Bismuth Germanate Films Having the Structure of Eulitine and Benitoite

The luminescence and luminescence excitation spectra of thin films of Bi₄Ge₃O₁₂ and Bi₂Ge₃O₉ were investigated. The spectra were decomposed into elementary components by the Alentsev-Fok method. It has been established that the luminescence spectra of thin Bi₄Ge₃O₁₂ and Bi₂Ge₃O₉ films have a similar structure and that each contains three luminescence bands with maxima at 2.70, 2.40, and 2.05 eV and at 2.73, 2.40, and 1.95 eV, respectively. Comparison of the results obtained with the well-known results of investigation of the luminescence of Bi₁₂GeO₂₀ and Bi₂O₃ suggests that the luminescence in the compounds considered is caused by the radiation processes that proceed in structural complexes of similar configuration that contain the bismuth ion in the nearest oxygen environment. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 3, pp. 377–380, May–June, 2005.     

Luminescence centers in yttrium silicate and germanate

Luminescence spectra for isostructural Y₂SiO₅ and Y₂GeO₅ are investigated. The spectra are resolved into elementary components by the Alentsev—Fock method. Bands with maxima in regions of 2.6, 2.3, and 2.05 eV in the spectra of Y₂SiO₅ luminescence and in regions of 2.55, 2.25, and 2.0 eV in the spectra of Y₂GeO₅ luminescence are considered as radiative recombination of excited associative donor-acceptor Y³⁺−O²⁻ pairs. The indicated bands are related to certain distances between yttrium (the donor) and oxygen (the acceptor). A band with a maximum of 2.95 eV in Y₂SiO₅ and 3.0 eV in Y₂GeO₅ occurs in recombination of electrons with holes trapped by an anionic sublattice. I. Franko L’vov State University, 50, Dragomanov St., L’vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 4, pp. 528–531, July–August, 1998.     

Luminescence of mercurylike impurities in single-crystal CdWO4 compounds

The processes of crystallization by the method of liquid epitaxy are studied for the first time for single-crystal films of CdWO₄ doped with the mercurylike ions Bi³⁺ and Pb²⁺, which can be used as thin-film components of combined scintillators for monitoring α- and β-activities. It is shown that in comparison with their solidcrystal analogs, the special features of these films consist in a longwave shift of the integral luminescence spectrum that is caused by high concentrations of the radiating complexes (V_Cd-WO₆) with hv_max=2.05–2.15 eV and the “distorted” complexes (WO₆)^* in them. It is found that in the case of luminescence of single-crystal films CdWO₄:Pb, radiation of mercurylike centers (PbO₆) prevails with hv_max=2.87 eV, while in luminescence of CdWO4, radiation of centers (BiO₆) with hv_max=2.16 eV and of complexes (V_Cd-WO₆). Institute of Applied Physics, Iv. Franko Lvov State University, 49, General Chuprynka St., Lvov, 290044, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 2, pp. 211–215, March–April, 1998.     

Luminescence of Bismuth‐Activated Ceramics of Yttrium and Scandium Oxides

The luminescence spectra of Y₂O₃:Bi and Sc₂O₃:Bi ceramics have been investigated. The spectra have been resolved into elementary components by the Alentsev–Fock method. It has been established that the luminescence is attributed to emission centers of three types, two of which are due to the replacement of Y³⁺ (or Sc³⁺) by Bi³⁺ at the nodes of the crystal lattice of Y₂O₃ (or Sc₂O₃) with the point symmetry C ₂ and C _3i . The emission center Bi³⁺ in the position C_3i leads to the appearance of blue luminescence with maxima at 3.03 eV for Y₂O₃:Bi and at 3.05 eV for Sc₂O₃:Bi; this luminescence is attributed to the transition ³ P ₁–¹ S ₀. The emission center Bi³⁺ in the position C ₂ initiates green luminescence (which is also related to the ³ P ₁–¹ S ₀ transition in Bi³⁺) with a maximum in the region of 2.40 eV in Y₂O₃:Bi and in the region of 2.46 eV in Sc₂O₃:Bi. The red luminescence band with maxima at 1.85 eV in Y₂O₃:Bi and at 1.95 eV in Sc₂O₃:Bi is related to the presence of structural defects.     

Luminescence properties of Y2WO6:Eu incorporated with Mo or Bi ions as red phosphors for light-emitting diode applications

In this study, the red phosphors, Y₂W_1−xMo_xO₆:Eu³⁺ and Y₂WO₆:Eu³⁺,Bi³⁺, have been investigated for light-emitting diode (LED) applications. In Y₂WO₆:Eu³⁺, the excitation band edge shifts to longer wavelength with the incorporation of Mo⁶⁺ or Bi³⁺ ions. The emission spectra exhibit ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transition of Eu³⁺ ion at 588, 593, and 610 nm, respectively. Moreover, the bluish-green luminescence of the WO₆⁶⁻ at about 460 nm is observed to decrease with the incorporation of Mo⁶⁺, which results in pure red color. Thus, this study shows that the red phosphor, Y₂WO₆:Eu³⁺, incorporated with Mo⁶⁺ or Bi³⁺ ions is advantageous for LEDs applications.     

Vibrational spectra of thin films of lead and bismuth tungstates

The IR reflection spectra are investigated for the systems “thin film of PbWO₄ or Bi₂WO₆-molten quartz v-SiO₂ substrate” within the region of 400–1600 cm⁻¹ at T=295 K. Interference in the thin films is considered. Interpretation of the bands belonging to the PbWO₄ and Bi₂WO₆ films is carried out. I. Franko L’vov State University, 50, Dragomanova St., 290005, L’vov, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 65, No. 3, pp. 459–461, May–June, 1998.     

Luminescence spectra and crystal structure of high-temperature superconductors

The luminescence spectra are obtained in the visible region for the high-T _c superconductors La₂CuO₄, YBA₂Cu₃O_7−δ , Bi₂Sr₂CaCu₂O_8±δ , and YBa₂Cu₃O_8±δ and for the secondary phases BaCuO_2±γ and Y₂Cu₂O₅. The presence of a luminescence band with energy E _lum∼2.4 eV in the spectra of all the investigated compounds is established. The nature of the observed luminescence bands is discussed on the basis of a comparative analysis of the crystal structures and luminescence spectra and on the basis of notions as to the presence of bands in the spectra accompanied by photoinduced diffusion of weakly bound oxygen and photoinduced charge transfer in the CuO₂ planes. Fiz. Tverd. Tela (St. Petersburg) 39, 1739–1746 (October 1997)     

Luminescence centers in Sc2O3

Sc₂O₃ luminescence spectra are studied. The spectra are separated into elementary bands by the Alentsev–Fock method. It is established that the luminescence spectra consist of a number of overlapping bands with maxima at 3.5; 3.05; 2.65; 2.35, and 2.05 eV. The band at 3.5 eV is interpreted as emission of self-localized excitons, and the other bands, as defect-center recombination. L’vov State University, 50, Dragomanov St., L’vov, 290005, Ukraine. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 6, pp. 776–778, November–December, 1997.     

Luminescence spectroscopy of Ln-doped Bi-containing phosphates and molybdates

The photoluminescence (PL) emission and excitation spectra of undoped and doped with rare-earth (RE = Eu, Tb) ions K₃Bi₅(PO₄)₆ and K₂Bi(PO₄)(MoO₄) crystals are studied in 3.7–14 eV region of the excitation photon energies at T = 8 and 300 K. The mechanisms of the host-related and RE-related luminescence in 3.7–7 eV region of the excitation photon energies are revealed in comparative analysis of the PL spectra of studied compounds. It is assumed that the excitation mechanisms of host luminescence of K₃Bi₅(PO₄)₆ and K₂Bi(PO₄) (MoO₄) crystals below 4.8 eV are related to Bi³⁺ ions in oxygen surrounding. An efficient energy transfer from the Bi³⁺-related luminescence centers to the emitting RE centers exists in crystals with low concentration of the RE dopants (1%). The PL excitation spectra of K₃Bi₅(PO₄)₆ crystals with high concentration of Eu dopants are formed by O – Eu CT transitions.     

Electronic excitations in ZnWO4 and ZnxNi1?xWO4 (x = 0.1 ? 0.9) using VUV synchrotron radiation

The photoluminescence spectra and luminescence excitation spectra of pure microcrystalline and nano-sized ZnWO₄ as well as the Zn _x Ni_1−x WO₄ solid solutions were studied using vacuum ultraviolet (VUV) synchrotron radiation. The samples were also characterized by x-ray powder diffraction. We found that: (i) the shape of the photoluminescence band at 2.5 eV, being due to radiative electron transitions within the [WO₆]⁶⁻ anions, becomes modulated by the optical absorption of Ni²⁺ ions in the Zn _x Ni_1−x WO₄ solid solutions; and (ii) no significant change in the excitation spectra of Zn_0.9Ni_0.1WO₄ is observed compared to pure ZnWO₄. At the same time, a shift of the excitonic bands to smaller energies and a set of peaks, attributed to the one-electron transitions from the top of the valence band to quasi-localized states, were observed in the excitation spectrum of nano-sized ZnWO₄.     

Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films

Single crystalline films of Bi-doped Y₂SiO₅ are studied at 4.2–350 K by the time-resolved luminescence methods under excitation in the 3.8–6.2 eV energy range. Ultraviolet luminescence of Y₂SiO₅:Bi (≈3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi³⁺ centers which are related to the ³P₀ and ³P₁ levels of a free Bi³⁺ ion, respectively. The lowest-energy excitation band of this emission, located at ≈4.5 eV, is assigned to the ¹S₀ → ³P₁ transitions of a free Bi³⁺ ion. The phenomenological model is proposed to describe the excited-state dynamics of Bi³⁺ centers in Y₂SiO₅:Bi, and parameters of the triplet RES are determined.     

Thermally stimulated luminescence of bismuth germanate ceramics with the benitoite,eulitine, and sillenite structures

Thermally stimulated luminescence (TSL) of Bi₂Ge₃O₉, Bi₄Ge₃O₁₂, and Bi₁₂GeO₂₀ and the primary components Bi₂O₃ and GeO₂ was studied under x-ray excitation. Thermal activation energies and frequency factors of trapping centers in the studied ceramics were determined. The relationships of TSL bands of the studied ceramics with maxima at 141–145 and 166–170 K and damage to the Ge sublattice and of TSL bands with maxima at 104–110 and 180–190 K and recombination processes in the Bi sublattice were demonstrated. Recombination processes causing luminescence upon nonequilibrium charge carrier release from trapping centers occur in structural complexes of similar configuration that contain the Bi ion in a nearest environment of O atoms. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 3, pp. 359–364, May–June, 2008.     

Slow components of the emission decay in fluoride crystals doped with Ce3+

Spatially separated defects created by photons with energies 6–8 eV in alkali-earth fluoride crystals doped with cerium are investigated with the help of thermoluminescence. Measuring the spectra of creation of V_k and H peaks of thermostimulated luminescence inBaF ₂:Ce³⁺. we demonstrate that photons with energies higher than 6eV induce H centers (self-trapped holes captured by interstitialF ions), whereas the formation of self-trapped holes begins on exposure to photons with energies greater than 7 eV. The influence of photoionization on theCe ³⁺ luminescence inBaF ₂, SrF₂, CaF₂, andCeF ₃ crystals is investigated in the range of photon energies 4–8 eV. An exponentialCe ³⁺-emisson decay was observed for excitation energy lying in the range 4–6 eV. Slow and fast decay components were observed under excitation by photons with energies higher than 6 eV. We believe that the slow and fast components are due to the tunnel recombination of trapped electrons with hole centers. A. P. Vinogradov Institute of Geochemistry of the Siberian Branch of the Russian Academy of Sciences. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 43–49, March, 2000.