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1.
Two well‐defined alternating π‐conjugated polymers containing a soluble electroactive benzo[1,2‐b:4,5‐b′]difuran (BDF) chromophore, poly(BDF‐(9‐phenylcarbazole)) (PBDFC), and poly(BDF‐benzothiadiazole) (PBDFBTD) were synthesized via Sonogashira copolymerizations. Their optical, electrochemical, and field‐effect charge transport properties were characterized and compared with those of the corresponding homopolymer PBDF and random copolymers of the same overall composition. All these polymers cover broad optical absorption ranges from 250 to 750 nm with narrow optical band gaps of 1.78–2.35 eV. Both PBDF and PBDFBTD show ambipolar redox properties with HOMO levels of ?5.38 and ?5.09 eV, respectively. The field‐effect mobility of holes varies from 2.9 × 10?8 cm2 V?1 s?1 in PBDF to 1.0 × 10?5 cm2 V?1 s?1 in PBDFBTD. Bulk heterojunction solar cell devices were fabricated using the polymers as the electron donor and [6,6]‐phenyl‐C61‐butyric acid methyl ester as the electron acceptor, leading to power conversion efficiencies of 0.24–0.57% under air mass 1.5 illumination (100 mW cm?2). These results indicate that their band gaps, molecular electronic energy levels, charge mobilities, and molecular weights are readily tuned by copolymerizing the BDF core with different π‐conjugated units. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012  相似文献   

2.
A quinoidal small‐molecule semiconductor QDPPBTT was synthesized. Organic thin‐film transistor (OTFT) devices based on QDPPBTT showed an electron mobility as high as 0.13 cm2 V?1 s?1 and Ion/Ioff ratio of 106 under ambient conditions. We suggested that 2D extended π‐conjugation and quinoid‐enhancing effect had an important role in electron mobility and stability of n‐type FET devices, which might be a good strategy in designing new material systems.  相似文献   

3.
Electron‐transporting organic semiconductors (n‐channel) for field‐effect transistors (FETs) that are processable in common organic solvents or exhibit air‐stable operation are rare. This investigation addresses both these challenges through rational molecular design and computational predictions of n‐channel FET air‐stability. A series of seven phenacyl–thiophene‐based materials are reported incorporating systematic variations in molecular structure and reduction potential. These compounds are as follows: 5,5′′′‐bis(perfluorophenylcarbonyl)‐2,2′:5′,‐ 2′′:5′′,2′′′‐quaterthiophene ( 1 ), 5,5′′′‐bis(phenacyl)‐2,2′:5′,2′′: 5′′,2′′′‐quaterthiophene ( 2 ), poly[5,5′′′‐(perfluorophenac‐2‐yl)‐4′,4′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene) ( 3 ), 5,5′′′‐bis(perfluorophenacyl)‐4,4′′′‐dioctyl‐2,2′:5′,2′′:5′′,2′′′‐quaterthiophene ( 4 ), 2,7‐bis((5‐perfluorophenacyl)thiophen‐2‐yl)‐9,10‐phenanthrenequinone ( 5 ), 2,7‐bis[(5‐phenacyl)thiophen‐2‐yl]‐9,10‐phenanthrenequinone ( 6 ), and 2,7‐bis(thiophen‐2‐yl)‐9,10‐phenanthrenequinone, ( 7 ). Optical and electrochemical data reveal that phenacyl functionalization significantly depresses the LUMO energies, and introduction of the quinone fragment results in even greater LUMO stabilization. FET measurements reveal that the films of materials 1 , 3 , 5 , and 6 exhibit n‐channel activity. Notably, oligomer 1 exhibits one of the highest μe (up to ≈0.3 cm2 V?1 s?1) values reported to date for a solution‐cast organic semiconductor; one of the first n‐channel polymers, 3 , exhibits μe≈10?6 cm2 V?1 s?1 in spin‐cast films (μe=0.02 cm2 V?1 s?1 for drop‐cast 1 : 3 blend films); and rare air‐stable n‐channel material 5 exhibits n‐channel FET operation with μe=0.015 cm2 V?1 s?1, while maintaining a large Ion:off=106 for a period greater than one year in air. The crystal structures of 1 and 2 reveal close herringbone interplanar π‐stacking distances (3.50 and 3.43 Å, respectively), whereas the structure of the model quinone compound, 7 , exhibits 3.48 Å cofacial π‐stacking in a slipped, donor‐acceptor motif.  相似文献   

4.
New arylacetylene‐substituted naphthalene diimides (NDIs) 1–6 , with both light‐emitting and semiconducting functions, are reported. Among them, the crystal structure of 1 was determined. On the basis of their reduction potentials and thin‐film absorption spectra, the HOMO/LUMO energies of these modified NDIs were estimated. The results reveal that their HOMO/LUMO energies are slightly affected by the flanking aryl groups. The emission colors of these NDIs vary from green to red, and interestingly, they show aggregation‐induced emission enhancement behavior with fluorescence quantum yields reaching 9.86 % in the solid state. Microrods of 1 , 3 , and 5 show typical optical wave‐guiding behavior with relatively low optical‐loss coefficients. Organic field‐effect transistors with thin films of these NDIs were fabricated with conventional techniques. The results indicate that thin films of 2 , 4 , and 6 , with long and branched alkyl chains, show air‐stable n‐type semiconducting properties with electron mobilities of up to 0.035 cm2 V?1 s?1 after thermal annealing, whereas 1 , 3 , and 5 , with short alkyl chains, behave as n‐type semiconductors under a nitrogen atmosphere with electron mobilities of up to 0.075 cm2 V?1 s?1 after thermal annealing.  相似文献   

5.
Organic field‐effect transistors incorporating planar π‐conjugated metal‐free macrocycles and their metal derivatives are fabricated by vacuum deposition. The crystal structures of [H2(OX)] (H2OX=etioporphyrin‐I), [Cu(OX)], [Pt(OX)], and [Pt(TBP)] (H2TBP=tetra‐(n‐butyl)porphyrin) as determined by single crystal X‐ray diffraction (XRD), reveal the absence of occluded solvent molecules. The field‐effect transistors (FETs) made from thin films of all these metal‐free macrocycles and their metal derivatives show a p‐type semiconductor behavior with a charge mobility (μ) ranging from 10?6 to 10?1 cm2 V?1 s?1. Annealing the as‐deposited Pt(OX) film leads to the formation of a polycrystalline film that exhibits excellent overall charge transport properties with a charge mobility of up to 3.2×10?1 cm2 V?1 s?1, which is the best value reported for a metalloporphyrin. Compared with their metal derivatives, the field‐effect transistors made from thin films of metal‐free macrocycles (except tetra‐(n‐propyl)porphycene) have significantly lower μ values (3.0×10?6–3.7×10?5 cm2 V?1 s?1).  相似文献   

6.
A series of electron‐deficient π‐conjugated systems with 4,9‐dihydro‐s‐indaceno[2,1‐d:6,5‐d′]dithiazole‐4,9‐dione‐based structures and fluorinated acyl groups as the terminal units have been designed and synthesized for application as organic field‐effect transistor (OFET) materials. The thermal, photophysical, and electrochemical properties and OFET performance of the synthesized compounds were investigated. OFET evaluation revealed that all compounds exhibited typical electron‐transporting characteristics, and electron mobilities up to 0.26 cm2 V?1 s?1 could be achieved. The air stabilities of OFET operation were dependent on the nature of the compounds and were investigated by X‐ray diffraction and atomic force microscopy. The terminal units had a great influence not only on the molecular properties, but also on the film‐forming properties and OFET performance.  相似文献   

7.
Two new electron‐rich molecules based on 3,4‐phenylenedioxythiophene (PheDOT) were synthesized and successfully adopted as hole‐transporting materials (HTMs) in perovskite solar cells (PSCs). X‐ray diffraction, absorption spectra, photoluminescence spectra, electrochemical properties, thermal stabilities, hole mobilities, conductivities, and photovoltaic parameters of PSCs based on these two HTMs were compared with each other. By introducing methoxy substituents into the main skeleton, the energy levels of PheDOT‐core HTM were tuned to match with the perovskite, and its hole mobility was also improved (1.33×10?4 cm2 V?1 s?1, being higher than that of spiro‐OMeTAD, 2.34×10?5 cm2 V?1 s?1). The PSC based on MeO‐PheDOT as HTM exhibits a short‐circuit current density (Jsc) of 18.31 mA cm?2, an open‐circuit potential (Voc) of 0.914 V, and a fill factor (FF) of 0.636, yielding an encouraging power conversion efficiency (PCE) of 10.64 % under AM 1.5G illumination. These results give some insight into how the molecular structures of HTMs affect their performances and pave the way for developing high‐efficiency and low‐cost HTMs for PSCs.  相似文献   

8.
Polymers having 2,5‐diphenyl‐1,3,4‐oxadiazole (BCO) or anthracene (BCA) as an electron transport unit and N,N′‐diphenyl‐N,N′‐bis(4‐butylphenyl)‐benzidine (BTPD) as a hole transport unit were prepared by condensation polymerization using Friedel–Crafts reaction. It was found that BCO was less reactive than BCA. The low reactivity of the BCO monomer can be explained by the oxygen atom in the oxadiazole unit, which acts as a Lewis base and reduces the activity of the catalyst. The redox behavior measured by cyclic voltammetry showed for both BTPD‐BCO and BTPD‐BCA almost the same oxidation potential. In addition, the BTPD‐BCO also exhibited a reduction peak. Hole and electron drifts mobility of the polymers were measured by the time‐of‐flight method. The hole drift mobility of both BTPD‐BCO and BTPD‐BCA was 7.4 × 10?5 cm2 V?1 s?1. The electron drift mobilities of BTPD‐BCO and BTPD‐BCA were 6.5 × 10?5 cm2 V?1 s?1 and 5.2 × 10?6 cm2 V?1 s?1, respectively. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 3083–3089, 2007  相似文献   

9.
1,4,8,9‐Naphthalene diimides (NDIs) with strong electron accepting ability and high stability are excellent building blocks for semiconductor polymers. However, 1,8‐naphthalene monoimide (NMI) with similar structure and energy levels as that of NDI has never been used to construct conjugated polymers because of synthetic difficulty. Herein, 3,6‐dibromo‐NMI (DBNMI) with bulky alkyl groups was obtained effectively in a four‐step synthesis, and three donor‐acceptor (D‐A) type conjugated polymers based on NMI were firstly prepared. These polymers have strong absorption in the range of 300–600 nm, low LUMO level of 3.68 eV, and moderate bandgaps of 2.18 eV. Space charge limiting current measurements indicate these polymers are typical electron transporting materials, and the highest electron mobility is up to 5.8 × 10−3 cm2 V−1 s−1, which is close to the star acceptor based on NDI (N2200, 5.0 × 10−3 cm2 V−1 s−1). © 2017 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2018 , 56, 276–281  相似文献   

10.
Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n‐type organic semiconductors. In this paper, we report a new A‐D‐A′‐D‐A conjugated molecule ( DAPDCV ) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n‐type semiconducting behavior with electron mobility up to 0.16 cm2?V?1?s?1 after thermal annealing under N2 atmosphere. Moreover, thin film of DAPDCV also shows stable n‐type transporting property in air with mobility reaching 0.078 cm2?V?1?s?1.  相似文献   

11.
Recently, diketopyrrolopyrrole (DPP)‐based materials have attracted much interest due to their promising performance as a subunit in organic field effect transistors. Using density functional theory and charge‐transport models, we investigated the electronic structure and microscopic charge transport properties of the cyanated bithiophene‐functionalized DPP molecule (compound 1 ). First, we analyzed in detail the partition of the total relaxation (polaron) energy into the contributions from each vibrational mode and the influence of bond‐parameter variations on the local electron–vibration coupling of compound 1 , which well explains the effects of different functional groups on internal reorganization energy (λ). Then, we investigated the structural and electronic properties of compound 1 in its isolated molecular state and in the solid state form, and further simulated the angular resolution anisotropic mobility for both electron‐ and hole‐transport using two different simulation methods: (i) the mobility orientation function proposed in our previous studies (method 1); and (ii) the master equation approach (method 2). The calculated electron‐transfer mobility (0.00003–0.784 cm2 V?1 s?1 from method 1 and 0.02–2.26 cm2 V?1 s?1 from method 2) matched reasonably with the experimentally reported value (0.07–0.55 cm2 V?1 s?1). To the best of our knowledge, this is the first time that the transport parameters of compound 1 were calculated in the context of band model and hopping models, and both calculation results suggest that the intrinsic hole mobility is higher than the corresponding intrinsic electron mobility. Our calculation results here will be instructive to further explore the potential of other higher DPP‐containing quinoidal small molecules. © 2015 Wiley Periodicals, Inc.  相似文献   

12.
Attachment of bulky substituents at both thiophene donor (D) and thiazole acceptor (A) heterocycles of a dipolar (μg=10.4 D) D‐π‐A merocyanine dye affords a more than 1 Å expansion of the common antiparallel supramolecular dimer motif in the solid state, enabling very close π‐contacts (3.36 Å) to two other neighbor molecules on each of the two remaining π‐faces. This unusual packing motif leads to three‐dimensional percolation pathways for hole transport and affords thin‐film transistors with mobility up to 0.64 cm2 V?1 s?1.  相似文献   

13.
A series of 1,3‐indandione‐terminated π‐conjugated quinoids were synthesized by alkoxide‐mediated rearrangement reaction of the respective alkene precursors, followed by air oxidation. This new protocol allows access to quinoidal compounds with variable termini and cores. The resulting quinoids all show LUMO levels below ?4.0 eV and molar extinction coefficients above 105 L mol?1 cm?1. The optoelectronic properties of these compounds can be regulated by tuning the central cores as well as the aryl termini ascribed to the delocalized frontier molecular orbitals over the entire molecular skeleton involving aryl termini. n‐Channel organic thin‐film transistors with electron mobility of up to 0.38 cm2 V?1 s?1 were fabricated, showing the potential of this new class of quinoids as organic semiconductors.  相似文献   

14.
Fused, extended π‐systems such as larger acenes and heteroacenes are interesting compounds for organic thin‐film transistors (TFTs). The larger the number of linearly cata‐fused rings, the lower the stability of the acenes. By peri‐fusion of additional rings, the stabilities can significantly be increased. Here we present a facile approach to use a diborylated dihydroanthracene as precursor to get diareno‐fused perylenes in just two steps in high yields. The compounds show pronounced packing in the crystalline states by π‐stacking. Promising candidates have been used to fabricate p‐channel TFTs by vacuum sublimation showing field‐effect mobilities up to 0.12 cm2 V?1 s?1.  相似文献   

15.
Direct arylation represents an attractive alternative to the conventional cross‐coupling methods because of its step‐economic and eco‐friendly advantages. A set of simple D–A oligomeric molecules ( F‐3 , F‐5 , and F‐7 ) by integrating thiophene (T) and tetrafluorobenzene (F4B) as alternating units through a direct arylation strategy is presented to obtain high‐performance charge‐transporting materials. Single‐crystal analysis revealed their herringbone packing arrangements driven by intensive C?H???π interactions. An excellent hole‐transporting efficiency based on single‐crystalline micro‐plates/ribbons was witnessed, and larger π‐conjugation and D–A constitution gave higher mobilities. Consequently, an average mobility of 1.31 cm2 V?1 s?1 and a maximum mobility of 2.44 cm2 V?1 s?1 for F‐7 were achieved, providing an effective way to obtain high‐performance materials by designing simple D–A oligomeric systems.  相似文献   

16.
ipso‐Arylative ring‐opening polymerization of 2‐bromo‐8‐aryl‐8H‐indeno[2,1‐b]thiophen‐8‐ol monomers proceeds to Mn up to 9 kg mol?1 with conversion of the monomer diarylcarbinol groups to pendent conjugated aroylphenyl side chains (2‐benzoylphenyl or 2‐(4‐hexylbenzoyl)phenyl), which influence the optical and electronic properties of the resulting polythiophenes. Poly(3‐(2‐(4‐hexylbenzoyl)phenyl)thiophene) was found to have lower frontier orbital energy levels (HOMO/LUMO=?5.9/?4.0 eV) than poly(3‐hexylthiophene) owing to the electron‐withdrawing ability of the aryl ketone side chains. The electron mobility (ca. 2×10?3 cm2 V?1 s?1) for poly(3‐(2‐(4‐hexylbenzoyl)phenyl)thiophene) was found to be significantly higher than the hole mobility (ca. 8×10?6 cm2 V?1 s?1), which suggests such polymers are candidates for n‐type organic semiconductors. Density functional theory calculations suggest that backbone distortion resulting from side‐chain steric interactions could be a key factor influencing charge mobilities.  相似文献   

17.
Two furan‐flanked polymers poly{3,6‐difuran‐2‐yl‐2,5‐di(2‐octyldodecyl)‐pyrrolo[3,4‐c]pyrrole‐1,4‐dione‐alt‐thienylenevinylene} (PDVFs), with a highly π‐extended diketopyrrolopyrrole backbone, are developed for solution‐processed high‐performance polymer field‐effect transistors (FETs). Atomic force microscopy and grazing incidence X‐ray scattering analyses indicate that PDVF‐8 and PDVF‐10 films exhibit a similar nodular morphology with the ultrasmall lamellar distances of 16.84 and 18.98 Å, respectively. When compared with the reported polymers with the same alkyl substitutes, this is the smallest d‐spacing value observed to date. This closed lamellar crystallinity facilitates charge carrier transport. Therefore, polymer thin‐film transistors fabricated from as‐spun PDVF‐8 films exhibit a high hole mobility exceeding 1.0 cm2 V?1 s?1 with a current on/off ratio above 106. After annealing treatment at 100 °C in air, the highest hole mobility of PDVF‐8‐based FETs was significantly improved to 1.90 cm2 V?1 s?1, which is among the highest values of the reported FET devices fabricated from polymer thin films based on this mild annealing temperature. In contrast, long alkyl‐substituted PDVF‐10 exhibited a relatively low hole mobility of 1.65 cm2 V?1 s?1 mainly resulting from low molecular weight. This work demonstrated that PDVFs would be promising semiconductors for developing cost‐effective and large‐scale production of flexible organic electronics. © 2014 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2014 , 52, 1970–1977  相似文献   

18.
The synthesis of novel π‐extended N‐heteroacenes, which have a large tetraazaacene subunit and a quinoxaline subunit connected through a four‐membered ring, is reported. They were studied with experimental and computational methods in comparison to the corresponding tetraazaacenes. As found from the DFT calculation, the four‐membered ring is a better linker than a five‐membered ring or a C?C single bond to extend N‐heteroacenes for a new design of n‐type semiconductors in terms of the spatial delocalization and energy level of LUMO as well as the reorganization energy. In solution‐processed thin film transistors, the π‐extended N‐heteroacenes are found to function as n‐type semiconductors with field effect mobility of up to 0.02 cm2 V?1 s?1 under ambient conditions.  相似文献   

19.
Three diaceno[a,e]pentalene analogues with pendant sterically bulky di‐tert‐butylphenyl groups have been designed and synthesized. With the extension of the conjugated molecular framework, the molecular arrangement is apparently tuned by the balance between the π‐extended surface and pendant alkyl or aryl substituents. Theoretical calculations of the morphologies were in good agreement with the experimental results. Ambient‐stable field‐effect transistors based on dianthraceno[a,e]pentalene ( DAP ) have been fabricated, which exhibited excellent hole mobilities (up to 6.55 cm2 V?1 s?1). Thus, this study has shown that diaceno[a,e]pentalenes are stable even with an extraordinarily large π‐surface area, and may thus serve as excellent molecular platforms for further exploring high‐performance semiconducting materials.  相似文献   

20.
Weak intermolecular interaction in organic semiconducting molecular crystals plays an important role in molecular packing and electronic properties. Here, four five‐ring‐fused isomers were rationally designed and synthesized to investigate the isomeric influence of linear and angular shapes in affecting their molecular packing and resultant electronic properties. Single‐crystal field‐effect transistors showed mobility order of 5,7‐ICZ (3.61 cm2 V?1 s?1) >5,11‐ICZ (0.55 cm2 V?1 s?1) >11,12‐ICZ (ca. 10?5 cm2 V?1 s?1) and 5,12‐ICZ (ca. 10?6 cm2 V?1 s?1). Theoretical calculations based on density functional theory (DFT) and polaron transport model revealed that 5,7‐ICZ can reach higher mobilities than the others thanks to relatively higher hole transfer integral that links to stronger intermolecular interaction due to the presence of multiple NH???π and CH???π(py) interactions with energy close to common NH???N hydrogen bonds, as well as overall lower hole‐vibrational coupling owing to the absence of coupling of holes to low frequency modes due to better π conjugation.  相似文献   

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