The process of oxygen chemisorption on the Si(111) surface

The chemisorption of oxygen on the Si(111) surface has been studied by the ASED-MO method. Three steps of the initial oxidation process have been proposed. The first step is molecular oxygen chemisorption. The second step is that of dissociated oxygen chemisorption in which the atomic short bridge site (between the first layer and second layer silicon atoms) can be occupied only after the saturation of the dangling bonds of the surface silicon with oxygen. The third step is the diffusion of atomic oxygen from the short bridge positions into the bulk of silicon to form an SiO₂ film. For molecular chemisorption, both the peroxy vertical and peroxy bridge models are possible although the peroxy vertical model is the more stable. The dissociated atomic oxygen can chemisorb for both the on-top and the short bridge models. Our results can explain, and are consistent with, most experimental results.     

Element specific surface reconstructions of islands during surfactant-mediated growth on Si (111)

The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si(n) clusters (n相似文献   

Symmetry breaking in the growth of two-dimensional islands on Si(111)

We find that the shape of two-dimensional (2D) Si or Ge islands has a lower symmetry than the threefold symmetry of the underlying Si(111) substrate if Bi is used as a surfactant during growth. Arrow-shaped or rhomb-shaped 2D islands are observed by scanning tunneling microscopy. This symmetry breaking is explained by a mutual shift between the surface reconstructions present on the substrate and on the islands. Using the kinematic Wulff construction the growth velocities of the steps could be determined from the island shape if the nucleation center has been located by a marker technique.     

Adsorption of potassium on a Si(111) surface

The adsorption of potassium on several sites (T₁, T₄, H₃) of a Si(111) surface is studied using the extended Hückel method and cluster models. The results show that the chemisorption energy on the T₄ site is almost equal to that on the H₃ site for an ideal surface. However, the analysis of chemical bonding of adatoms on a Si surface suggests that the chemisorption of adatoms might induce a kind of reconstruction on the Si(111) surface. Rough calculations for the adsorption on this reconstructed surface are carried out. In this paper, charge transfer, density of states and characterization of the bonds between the adatom and substrate Si atoms are also investigated in detail.     

Effect of dislocations on the shape of islands during silicon growth on the oxidized Si(111) surface

The formation of dislocation-rich and dislocation-free silicon islands during growth in the absence of mechanical stresses has been studied by scanning tunneling microscopy. The rounded shape of islands obtained at growth temperatures of 400–500°C on the oxidized Si(111) surface is associated with the presence of dislocations within them. The transfer of atoms from the oxidized surface to the islands occurs due to the barrier of the potential energy at the SiO₂/Si boundary. The {111} and {311} facets dominate in the shape of the islands grown at 500–550°C. Their appearance indicates the absence of the threading dislocations in the islands and that the growth is limited by the stage of the nucleation of a new atomic layer.     

Ge adsorption on the Si(111) surface

Total energy calculations, performed for one monolayer of Ge adsorbed on Si(111), indicate that 1 × 1 models such as the atop site and hollow site adsorption geometries are unstable with respect to the formation of 2 × 1 Seiwatz chains of Ge adatoms. This result indicates that, for one monolayer coverage, Ge-Ge bonds are likely to form.     

Properties of Si nanostructural modification on Si (111) surface

Si nanostructures (Si-NSs) epitaxially grown or adsorbed on Si (111) surface, with various shapes including pit-like, bars, islands, hill-like, diamond-like and double cage, were studied theoretically using density-functional theory (DFT) calculations. The electronic and optical properties of these Si-NSs were calculated, showing that the designed Si-NSs modifications can enhance the optical absorption for Si surface.     

Sr/Si(100)表面TiSi2纳米岛的扫描隧道显微镜研究

为了解半导体衬底与氧化物之间存在的相互作用,以及量子尺寸效应对不同再构体的影响,制备了1—2个原子层厚的TiSi₂/Si(100)纳米岛,并使用扫描隧道显微镜(STM)表征手段详细地研究了TiSi₂ /Si(100)纳米岛的电子和几何特性. 结果发现:这些纳米岛表面显示出明显的金属性;其空态STM图像具有典型的偏压依赖性:在高偏压下STM 图像由三聚物形成的单胞构成,并在低偏压下STM 图像显示为密堆积的图案,这些不同的图案反映出不同能量位的态密度有明显差异. 关键词： 2纳米岛')" href="#">TiSi₂纳米岛 Sr/Si(100)表面 扫描隧道显微镜     

Formation mechanism of one-dimensional Si islands on a H/Si(001) surface

The formation mechanism of one-dimensional Si islands on a H/Si(001)-(2x1) surface is studied using scanning tunneling microscopy/spectroscopy and first-principles calculations. We observed that one-dimensional islands that are made from dimer chains are formed at the initial growth stages similar to the bare Si(001) surface. It is found that the number of odd-numbered dimer chains is larger than that of even-numbered dimer chains. We propose the growth processes of the two types of growth edges to explain the observation.     

Laser-induced oxidation of the Si(111) surface

Pulsed laser induced oxidation of clean Si(111) surfaces has been studied by Auger electron spectroscopy and electron energy loss spectroscopy. The short duration time of the pulse has allowed a precise investigation of the first stages of the oxidation. About 1–2 oxide monolayers first grow in less than 10 s. Their stoichiometry evolves from SiO_x towards SiO₂ with increasing beam energy densities. Once this superficial layer has formed, no evolution is seen with further irradiation, suggesting that oxygen diffusion during the pulse duration cannot sustain the oxide growth.     

Leakage of O2 precursor molecules from inert hydrogen islands on a Pt(111) surface

We have observed, using infrared spectroscopy, that the precursor-mediated O2 chemisorption on the clean and the partially hydrogen-covered Pt(111) surfaces exhibits opposite temperature dependencies above the temperature for stable O2 physisorption. While the chemisorption probability on the clean surface increases with increasing temperature due to thermal activation of the precursor, it decreases on the partially hydrogen-covered surface which we suggest is due to a general loss of the mobile precursor molecules by thermal desorption from chemically inert hydrogen islands.     

On interpretation of intrinsic surface states on Si(111) surface

Extended Hückel theory is applied to the Si9111) ideal and relaxed surfaces. In addition to the results obtained by selfconsistent pseudopotential calculations of Schlütter et al., new surface states gave been found. The results are essentially independent of surface relaxation.