Calculation of scanning tunnelling microscopy images for Kr/graphite system

The scanning-tunnelling-microscopy (STM) images of Kr atoms adsorbed on a monolayer graphite sheet (Kr/graphite system) are calculated using the first-principle total-energy electronic structure calculations within the density functional theory in the local density approximation. The results obtained agree well with the observations. It is found that the optimal site of the adsorbed Kr atom is at the top of the centre of the carbon hexagon, and its equilibrium distance from monolayer graphite surface is about 0.335nm. It is shown that the hybridization of C 2p electronic states (π-electronic states) and Kr 4p and 5s electronic states is the main origin of the Fermi-level local density of state.     

Yb2.75C60价带光电子能谱

用角积分紫外光电子能谱技术测量了Yb2 75C6 0 薄膜的价带电子态密度分布 .相纯Yb2 75C6 0 样品通过C1s芯态x射线电子谱峰的位移表征 .结果表明Yb2 75C6 0 是半导体 ,在费米能级处几乎没有电子态分布 .Yb 6s电子态和C6 0 LU MO能带的杂化效应不可忽略 ,有部分Yb 6s电子分布在Yb C6 0 杂化能带上 .     

碳掺杂硼氮纳米管电子场发射的第一性原理研究

对闭口硼氮纳米管（BNNT）顶层掺碳体系,运用第一性原理研究了电子场发射性能.结果表明,掺碳的BNNT体系电子结构变化显著;外电场愈强,体系态密度向低能端移动幅度愈大,且最高占据分子轨道（HOMO）/最低未占据分子轨道（LUMO）能隙愈小.体系态密度和局域态密度,HOMO和LUMO及其能隙分析一致表明,各种碳掺杂体系中C_eqBNNT的场发射性能最佳. 关键词： 硼氮纳米管 碳掺杂 第一性原理     

Orbital hybridization and charge transfer in carbon nanopeapods

We investigate the electronic structure of the fullerenes encapsulated inside carbon nanotubes, the so-called nanopeapods, using the first-principles study. The orbital hybridization of LUMO+1 (the state above the lowest unoccupied molecular orbital) of C60, rather than LUMO as previously proposed, with the nanotube states explains the peak at approximately 1 eV in recent scanning-tunneling-spectroscopy (STS) data. For the endohedral metallofullerenes nested in the strained nanotube, the charge transfer shifts the relative energy levels of the different states and produces a spatial modulation of the energy gap in agreement with another STS experiment.     

碳掺杂闭口硼氮纳米管场发射第一性原理研究

运用第一性原理研究了闭口硼氮纳米管（BNNT）顶层掺碳体系（C@BNNT）的电子场发射性能.结果表明：随外电场增强,C@BNNT电子结构变化显著,态密度（DOS）向低能方向移动;碳原子的局域态密度（LDOS）在费米能级附近明显增大;赝能隙、最高占据分子轨道（HOMO）/最低未占据分子轨道（LUMO）能隙减小;体系电荷移向帽端.DOS,HOMO/LUMO及Mulliken电荷分析一致表明,与BNNT相比,C@BNNT电子场发射性能显著改善,且C@BN_moreNT性能更优. 关键词： 碳掺杂 硼氮纳米管 电子场发射 第一性原理     

Ab-initio Study of Small Silver Nanoclusters

We explore the lowest energy structures and investigate the structural and electronic properties of small Ag_N (N = 1–10) clusters by employing an ab-initio self-consistent density functional method in the local density approximation. The calculation of binding energy, bond length and the energy difference of HOMO–LUMO states have been carried out in a large energy interval for different isomeric forms of Ag clusters. The cluster binding energies increases rapidly with cluster size, which is consistent with the size dependence properties of clusters but our values are slightly higher than the other calculations.     

Dirac fermions on graphite cones

The electronic structure of graphitic cones is investigated within the self-consistent field-theory model. The local and total density of states near the apex are found for cones of different opening angles. For extended electronic states, the total density of states is found to vanish at the Fermi level at any opening angles more than 60° In turn, for power-law localized states, normalized zero-energy modes are shown to emerge.     

Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study

The electronic properties of an armchair (4,4) single-walled silicon carbide nanotube (SWSiCNT) with the length and diameter of 22.4 and 6.93 Å, respectively under different tensile strains are investigated by density functional theory (DFT) calculation. The change of highest occupied molecular orbital and lowest unoccupied molecular orbital (HOMO–LUMO) gap of the nanotube has been observed during the elongation process. Our results show that the gap will significantly decrease linearly with the increase of axial strain. Two different slopes are found before and after an 11% strain in the profiles of the HOMO–LUMO gap. The radial buckling has been performed to investigate the radial geometry of nanotube. The partial density of states (PDOS) of two neighboring Si and C atoms of the nanotube are further studied to demonstrate the strain effect on the electronic structure of SiC nanotube. The PDOS results exhibit that the occupied states of Si atom and the unoccupied states of C atom are red-shifted and blue-shifted under stretching, respectively. Mulliken charge analysis reveals that Si and C atoms will become less ionic under the larger strain. The electron differences of silicon carbide nanotube (SiCNT) on tensile loading are also studied.     

Optical properties of SiC nanocages: ab initio study

The structural, electronic and optical properties of Si _n C _n (n=12,16,20,30,35 and 60) nanocages were studied using different approximations of density functional theory, i.e. local density approximation (LDA), generalized gradient approximation (GGA) and density functional theory based tight binding approximation (DFTB). The highest occupied molecular orbitals (HOMO) and lowest unoccupied molecular orbitals (LUMO) energy gaps were calculated for all nanocages. Time-dependent density functional theory (TD-DFT) was also applied for estimating of the optical excitation and exciton binding energies of the nanocages and the results compared with pure DFT calculations.     

Cluster model electronic structure calculations for the ideal and hydrogen chemisorbed Si (100) surfaces

The electronic structure of the ideal and hydrogen chemisorbed Si(100) surfaces is calculated using the self-consistent scattered-wave cluster model. The results are presented for total and local density of states. These are compared with experiments and other calculations, where available.     

钾钡共掺菲分子结构和电子特性的第一性原理研究

采用基于密度泛函理论的平面波赝势法,对钾钡共掺杂情形下菲分子晶体的结构、能带、电子态密度、形成能、电荷转移等电子特性进行系统的研究.通过对比计入范德瓦尔斯力作用前后晶体结构的差异,说明计算中包含范德瓦尔斯力修正的重要性.从形成能的角度证明了共掺杂的可行性和稳定性.在钾钙、钾锶、钾钡等共掺杂元素组合中,K_1Ba_1-菲中平均每个金属原子的形成能为-0.25 eV,远大于K_1Sr_1-菲和K_1Ca_1-菲中的-0.13和-0.04 eV,钾钡共掺杂是最合理的方案.只有单双价金属共掺杂,才能使分子呈现负三价.此时,菲分子最低未占据轨道(LUMO)和LUMO+1轨道组成的能带正好位于费米能级处,K_1Ba_1-菲呈现金属性.费米能级处的态密度为17.3 eV~(-1),电子态主要来自于碳原子的2p轨道,钡原子的5d轨道也有少许贡献.从理论模拟的角度研究了K_1Ba_1-菲的晶体结构和电子特性,在已有实验和理论研究尚未涉及共掺杂的背景下,提出了不同价态金属共掺杂方案,为制备芳烃有机超导体样品和调制体系电子结构提供了新的研究思路.     

Electronic structure of the organic semiconductor copper tetraphenylporphyrin (CuTPP)

The electronic structure of thin films of the organic semiconductor copper tetraphenylporphyrin (CuTPP) has been studied using synchrotron radiation-excited resonant soft X-ray emission spectroscopy (RSXE), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and X-ray photoemission spectroscopy (XPS). The C and N partial density of states for both the valence and conduction band electronic structure has been determined, while XPS was used to provide information on the chemical composition and the oxidation states of the copper. Good agreement was found between the experimental measurements of the valence and conduction bands and the results of density functional theory calculations.     

Consistent LDA’ + DMFT—an unambiguous way to avoid double counting problem: NiO test

We present a consistent way of treating a double counting problem unavoidably arising within the LDA + DMFT combined approach to realistic calculations of electronic structure of strongly correlated systems. The main obstacle here is the absence of systematic (e.g., diagrammatic) way to express LDA (local density approximation) contribution to exchange correlation energy appearing in the density functional theory. It is not clear then, which part of interaction entering DMFT (dynamical mean-field theory) is already taken into account through LDA calculations. Because of that, up to now there is no accepted unique expression for the double counting correction in LDA + DMFT. To avoid this problem we propose here the consistent LDA’ + DMFT approach, where LDA exchange correlation contribution is explicitly excluded for correlated states (bands) during self-consistent band structure calculations. What is left out of Coulomb interaction for those strongly correlated states (bands) is its non-local part, which is not included in DMFT, and the local Hartreelike contribution. Then the double counting correction is uniquely reduced to the local Hartree contribution. Correlations for strongly correlated states are then directly accounted for via the standard DMFT. We further test the consistent LDA’ + DMFT scheme and compare it with conventional LDA + DMFT calculating the electronic structure of NiO. Opposite to the conventional LDA + DMFT our consistent LDA’ + DMFT approach unambiguously produces the insulating band structure in agreement with experiments.     

The local electronic structure of tin phthalocyanine studied by resonant soft X-ray emission spectroscopies

The electronic structure of thin films of the organic semiconductor tin phthalocyanine (SnPc) has been investigated by resonant and non-resonant soft X-ray emission (RXES and XES) at the carbon and nitrogen K-edges with excitation energies determined from near edge X-ray absorption fine structure (NEXAFS) spectra. The resultant NEXAFS and RXES spectra measure the unoccupied and occupied C and N 2p projected density of states, respectively. In particular, RXES results in site-specific C 2p and N 2p local partial density of states (LPDOS) being measured. An angular dependence of C 2p and N 2p RXES spectra of SnPc was observed. The observed angular dependence, the measured LPDOS and their correspondence to the results of density functional theory calculations are discussed. Observed differences on the same site-specific features between resonant (non-ionising) and non-resonant (ionising) NXES spectra are attributed to symmetry selection and screening.     

Correlation effects on optical properties of TbOFeAs

Based on local density approximation and Hubbard-U corrections (LDA+U), we study the influence of Coulomb interaction for Tb 4f states on the optical properties of the recently discovered superconductor, such as TbOFeAs. Within the incorporation of onsite Hubbard effect in TbOFeAs, we discuss the electronic structure, as well as the optical spectra and we compared them to LDA calculations. For non-magnetic (NM) configuration, the electronic structure exhibits high density of states, N(E _F ) in the proximity of Fermi level. With and without the electronic correlation effects, we carried out the calculations for the optical properties such as the optical conductivity, joint density of states (JDOS), optical absorption, the electron energy loss function and reflectivity of TbOFeAs in a large photon energy scale of 30 eV. Despite the absence of a Mott insulator transition, we infer that the electronic correlation effects are prominent in the recently discovered superconductor, like TbOFeAs. We also predict the in-plane anisotropy of plasma frequency that has been evaluated recently in the other ReOFeAs systems.     

Visualizing the spin of individual cobalt-phthalocyanine molecules

Low-temperature spin-polarized scanning tunneling microscopy is employed to study spin transport across single cobalt-phthalocyanine molecules adsorbed on well-characterized magnetic nanoleads. A spin-polarized electronic resonance is identified over the center of the molecule and exploited to spatially resolve stationary spin states. These states reflect two molecular spin orientations and, as established by density functional calculations, originate from a ferromagnetic molecule-lead exchange interaction.     

Electronic and Spectral Properties of RRhSn (R = Gd,Tb) Intermetallic Compounds

The investigations of electronic structure and optical properties of GdRhSn and TbRhSn were carried out. The calculations of band spectrum, taking into account the spin polarization, were performed in a local electron density approximation with a correction for strong correlation effects in 4f shell of rare earth metal (LSDA + U method). The optical studies were done by ellipsometry in a wide range of wavelengths, and the set of spectral and electronic characteristics was determined. It was shown that optical absorption in a region of interband transitions has a satisfactory explanation within a scope of calculations of density of electronic states carried out.     

Magnetic impurities in Cu and Ag

We report self-consistent calculations for the electronic and magnetic structure of 3d-impurities in Cu and Ag. Exchange and correlation effects between the electrons are treated in the local spin-density approximation, and the corresponding one-electron Schroedinger equation is solved by the Korringa-Kohn-Rostocker-Green's function method. Without adjustable parameters we obtain results for the local density of states and the magnetic moments of the impurities.     

Resonant photoemission study ofK-derived valence-band states in K X C60

The electronic structure of K-doped C₆₀ was investigated by photoemission (PE) and X-ray absorption near-edge structure (XANES) studies at the C-1s and K-2p thresholds. In addition, information on the local K-derived partial density of states in superconducting K₃C₆₀ was obtained by resonant PE at the K-2p _1/2 threshold. The experimental observations support a complete charge transfer from K to C₆₀ and we clearly observe a finite density of states atE _F . From resonant PE, occupied states with K-p, d character could be identified in the binding-energy region from 1.5 to 8 eV below, but not directly at the Fermi level. This partial-density-of-states structure agrees well with the results of our band-structure calculations based on the local-density approximation.     

Electronic structure and magnetism of FeGe2

The electronic band structure of FeGe₂ has been calculated using the self-consistent full potential non-orthogonal local orbital minimum basis scheme based on the density functional theory. In the band structure of FeSn₂, Fe 3d and Sn 5p states play important roles near the Fermi level. Our calculations show that large enhancement of the static susceptibility over its non-interacting value is found due to a peak in the density of states at the Fermi level.