The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of impurities in quantum-well wires

Using a variational approach, we have calculated the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum-well wires under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section and the impurity binding on temperature and hydrostatic pressure.     

The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots

Using a variational approach, we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots. Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure.     

Donor-impurity related binding energy and photoinization cross-section in quantum dots: electric and magnetic fields and hydrostatic pressure effects

We have studied the behavior of the binding energy and photoionization cross-section of a donor-impurity in cylindrical-shape GaAs-Ga_0.7Al_0.3As quantum dots, under the effects of hydrostatic pressure and in-growth direction applied electric and magnetic fields. We have used the variational method under the effective mass and parabolic band approximations. Parallel and perpendicular polarizations of the incident radiation and several values of the quantum dot geometry have also been considered. Our results show that the photoionization cross-section growths as the hydrostatic pressure is increased. For parallel polarization of the incident radiation, the photoionization cross-section decreases when the impurity is shifted from the center of the dot. In the case of perpendicular polarization of the incident radiation, the photoionization cross-section increases when the impurity is shifted in the radial direction of the dot. For on-axis impurities the transitions between the ground state of the impurity and the ground state of the quantum dot are forbidden. In the low pressure regime (less than 13.5 kbar) the impurity binding energy growths linearly with pressure, and in the high pressure regime (higher than 13.5 kbar) the binding energy growths up to a maximum and then decreases. Additionally, we have found that the applied electric and magnetic fields may favor the increase or decrease in binding energy, depending on the impurity position.     

Impurity-related polarizability and photoionization-cross section in double quantum wells under electric fields and hydrostatic pressure

Double quantum well heterostructures are quite important for the exploration of correlated electron states in two-dimensional systems. By using the variational procedure, within the effective-mass and parabolic-band approximations, the effects of both electric field and hydrostatic pressure on the shallow-donor-impurity related polarizability and photoionization cross-section in GaAs–Ga_1−xAl_xAs double asymmetric quantum wells are presented. The electric field is considered to be applied along the growth direction. It is found that the impurity binding energy and polarizability can be tuned by means of an applied external electric field or hydrostatic pressure in asymmetric double quantum wells, a behavior which could be used in the design and construction of semiconductor devices. The photoionization cross-section magnitude increases as the pressure and applied electric field are increased, except beyond the Γ–X crossover in the barrier material, where a decrease of the photoionization cross-section is expected due the smaller confinement of the impurity wave function.     

The hydrostatic pressure and temperature effects on Raman scattering of a hydrogenic impurity in a disc-shaped quantum dot

Using the perturbation method and the effective-mass approximation, we studied the combined effects of hydrostatic pressure and temperature on Raman scattering in a disc-shaped quantum dot with a parabolic potential in the presence of an electric field. The differential cross-section involved in this process is calculated. Numerical calculations on a typical GaAs quantum dot are performed. The results show that not only the impurity but also the temperature and the hydrostatic pressure have an influence on the differential cross-section of the system.     

Effects of hydrostatic pressure on intrawell and interwell excitons in a strained GaAs/GaAlAs double quantum well system

Binding energies of intrawell and interwell excitons are investigated in a GaAs/GaAlAs double quantum well system in the presence of hydrostatic pressure applied in the z-direction. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of pressure. The pressure dependent photoionization cross section for a charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width and the hydrostatic pressure. Our results are compared with the other existing literature available.     

同步辐射软X射线能区Ar原子光致电离截面的研究

利用北京同步辐射装置3W1B光束线产生的单色光作为光源,流气式无窗低压强双电离室作为气体容器,选择氩气作为实验气体,使用合适的公式和软件,实验测定了能量从180到2?70eV范围内若干压强点处光致电离截面与能量的关系曲线.发现在氩原子的L吸收边附近光致电离截面与压强有关:压强越低,截面越大.实验结果与理论结果进行了对比,结果表明,在15?0—2?0?5eV能量范围,理论与实验符合良好,但是在氩原子的L吸收边附近由于束线分辨率的原因,理论与实验有一定偏差.     

Hydrostatic pressure on optical absorption and refractive index changes of a shallow hydrogenic impurity in a GaAs/GaAlAs quantum wire

The effect of hydrostatic pressure on the binding energy of a hydrogenic impurity in a GaAs/GaAlAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a single band effective mass approximation. Pressure induced photoionization cross section of the hydrogenic impurity is investigated. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of pressure are analysed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and the pressure.     

Binding energy and photoionization cross-section of a hydrogen-like donor impurity in a quantum well-wire in a magnetic field

The effect of a uniform longitudinal magnetic field on the binding energy and photoionization cross-section of a hydrogen-like donor impurity is studied for a semiconductor quantum well-wire approximated by a cylindrical well of finite depth. The selection rules and analytical expressions for the photoionization cross-section are obtained depending on the magnetic field induction, impurity position, and light wave polarization.     

Branching ratios and the partial photoionization cross-section for the 3s electron of argon

Binding-energy spectra obtained using the dipole (e, 2e) electron impact coincidence method have been used to derive the 3s/3p cross-section ratios for the photoionization of argon up to 75 eV. The 3s and 3p photoionization branching ratios have been obtained by making use of recently determined double photoionization yields. The partial photoionization cross-section (oscillator strength) for 3s ionization, obtained using the branching ratio and the known total photoionization cross-section, shows the deep minimum ca. 10 eV above threshold which has been predicted by those theoretical calculations which include electron correlation effects. Below 50 eV the cross-section is in excellent agreement with the SRPAE calculation. The results are in close agreement with recent measurements made using synchrotron radiation but are consistently smaller below the minimum and larger at the higher energies.     

The effect of a strong magnetic field on the binding energy and the photoionization process in quantum-well wires

Within the effective-mass approximation, we have investigated the influence of a strong magnetic field on the ground state binding energy and the photon energy dependence of the photoionization cross-section of a shallow donor impurity in a quasi-one-dimensional rectangular quantum wire with infinite and finite potential barriers, using a variational approach. It is found that the binding energy and the photoionization cross-section as a function of photon energy were drastically dependent on the sizes of the wire, the potential well heights and the applied magnetic field.     

Characteristics of LM-OSL from several different types of quartz

We present Linear-Modulation OSL (LM-OSL) curves from several different types of quartz, including sedimentary quartz, bulk rock crystal and synthetic quartz. The LM-OSL method consists of linearly increasing the intensity of the stimulation light while continuously monitoring the OSL emission from the sample. With this technique, one obtains peaks of luminescence intensity versus time (Bulur, 1996) in which the position of the peak is inversely related to the photoionization cross-section of the trap. The shape of the LM-OSL curve is directly related to the shape of the conventional OSL decay curve in which the stimulating light source is maintained at constant intensity (so-called Continuous-Wave OSL, or CW-OSL). In the latter, the OSL from the traps with the highest photoionization cross-section decays most rapidly with stimulation time, while OSL from those traps with smaller photoionization cross-sections is characterized by longer decay times. In this paper, data are presented comparing the CW-OSL and LM-OSL curves for several different quartz types with particular focus on the changes in the shapes of each of these curves with sample type pre-heat temperature, and measurement temperature. Several different LM-OSL components are found for each sample, each with different photoionization cross-sections, but a universal behavior for quartz is not observed; each sample is different. From the dependence upon pre-heat temperature, features associated with shallow traps can be identified. Traps which empty very rapidly can be observed more easily in the LM-OSL curves than in the conventional CW-OSL curves, and the temperature dependence of the photoionization cross-section for the various components can be clearly discerned.     

Laser field induced interband absorption in a strained GaAs/GaAlAs double quantum well system

Effect of laser field intensity on exciton binding energies is investigated in a GaAs/ GaAlAs double quantum well system. Calculations have been carried out with the variational technique within the single band effective mass approximations using a two parametric trial wave function. The interband emission energy as a function of well width is calculated in the influence of laser field. The laser field induced photoionization cross-section for the exciton placed at the centre of the quantum well is computed as a function of normalized photon energy. The dependence of the photoionization cross-section on photon energy is carried out for the excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The intense laser field dependence of interband absorption coefficient is investigated. The results show that the exciton binding energy, interband emission energy, the photoionization cross-section and the interband absorption coefficient depend strongly on the well width and the laser field intensity. Our results are compared with the other existing literature available.     

Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers

Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters.     

Combined effects of hydrostatic pressure and temperature on nonlinear properties of an exciton in a spherical quantum dot under the applied electric field

Within the framework of the effective-mass approximation, we have calculated the combined effects of hydrostatic pressure, temperature and applied electric field on an exciton confined in a typical GaAs/Ga_0.7Al_0.3As quantum dot. Several inputs of the confinement potential, hydrostatic pressure, temperature, and applied electric field have been considered. Our findings suggest that (1) the effect of the confinement strength is dominant over the electric field effect, (2) the oscillator strength is an increasing function of the hydrostatic pressure, (3) the absorption coefficients and energy difference depend strongly on the hydrostatic pressure but weakly on the temperature, (4) the absorption coefficients with considering excitonic effects are stronger than those without considering excitonic effects and the absorption peak will move to the right side induced by the electron-hole interaction, (5) the applied electric field may effect either the size or the position of absorption peaks of excitons.     

Hydrostatic pressure and temperature dependence of correlation energy in a spherical quantum dot

The combined effects of hydrostatic pressure and temperature on the ground state binding energy of two electrons in a GaAs spherical quantum dot have been studied by using a perturbation approach within the effective-mass approximation. Our results show that an increment in temperature results in a decrease of the correlation energy while an increment in the pressure for the same temperature increases the correlation energy at a particular dot size. In all cases, it is observed that there is a decrease in the correlation energy due to an increase in the dot size with a given temperature and pressure. The combined effects of hydrostatic pressure and temperature affect the correlation energies appreciably for narrower dots only. The correlation contributes 10%–30% to the binding energy. All the calculations have been carried out with finite barriers, and good agreement is obtained with the existing literature values.     

Partial photoionization cross-sections for CO2 and N2O from 20 to 6OeV

Measurements of the partial photoionization cross-sections of the molecules CO₂ and N₂O are reported for the energy range 20–6OeV. Large contributions to the photoionization cross-section from multiple electron transitions are observed, particularly above 40eV, in accord with the results of recent many-body Green's function-calculations. The cross-section for total photabsorption as well as the ionization efficiency have also been measured.     

Binding energy and photoionizaiton cross-section of hydrogen-like impurity in a Pöschl-Teller quantum well

The effect of the donor impurity position and the form of confining potential on the binding energy and the photoionization cross-section in a semiconductor quantum well with the Pöschl-Teller potential is studied. An analytical expression for the photoionization cross-section is obtained for the case when the polarization vector of light wave is directed along the direction of size quantization. It is shown that the photoionization cross-section has a threshold behavior.     

The effects of hydrostatic pressure and intense laser field on the linear and nonlinear optical properties of a square quantum well

In this paper, the effects of hydrostatic pressure, temperature and intense laser field on the linear and nonlinear optical processes in the conduction band of a square quantum well are numerically investigated in the effective mass approximation. The analytical expressions of optical properties are obtained by using the compact density-matrix approach. The numerical results are presented for typical square GaAs/Al_xGa_1?xAs single quantum well system. The nonlinear optical absorption and refractive index changes depending on the hydrostatic pressure and intense laser field are investigated for two different temperature values. The results show that the intense laser field, the hydrostatic pressure and the temperature have a significant effect on the optical characteristics of these structures.     

Donor impurity-related photoionization cross-section in parabolic quantum wires: Effects of intense laser field and applied electric field

Within the effective mass approximation, the effects of the electric and intense laser fields on the binding energy and the photoionization cross-section of shallow-donor impurities in GaAs/GaAlAs parabolic quantum wires are investigated theoretically by using a variational method. The numerical results show that the electric and intense laser fields lead to significant changes in the binding energy and photoionization cross-section.